-
1.发明申请公开(公告)号：US20100176487A1
公开(公告)日：2010-07-15
申请号：US12731990
申请日：2010-03-25
CPC分类号： H01L28/40 , H01G13/00 , H01L21/02112 , H01L21/02172 , H01L21/283 , H01L28/57
摘要： An electronic component is provided on a substrate. A thin-film capacitor is attached to the substrate, the thin-film capacitor includes a pyrochlore or perovskite dielectric layer between a plurality of electrode layers, the electrode layers being formed from a conductive thin-film material. A reactive barrier layer is deposited over the thin-film capacitor. The reactive barrier layer includes an oxide having an element with more than one valence state, wherein the element with more than one valence state has a molar ratio of the molar amount of the element that is in its highest valence state to its total molar amount in the barrier of 50% to 100%. Optionally layers of other materials may intervene between the capacitor and reactive barrier layer. The reactive barrier layer may be paraelectric and the electronic component may be a tunable capacitor.
摘要翻译： 电子部件设置在基板上。 薄膜电容器附着在基板上，薄膜电容器包括在多个电极层之间的烧绿石或钙钛矿电介质层，电极层由导电薄膜材料形成。 反应性阻挡层沉积在薄膜电容器上。 反应性阻挡层包括具有多于一个价态的元素的氧化物，其中具有多于一个价态的元素具有处于其最高价态的元素的摩尔量与其总摩尔量的摩尔比， 50％至100％的障碍。 任选地，其它材料层可以介于电容器和反应性阻挡层之间。 反应性阻挡层可以是顺电性的，并且电子部件可以是可调电容器。
-
2.发明申请Hermetic Passivation Layer Structure for Capacitors with Perovskite or Pyrochlore Phase Dielectrics 审中-公开具有钙钛矿或热解相电介质的电容器的密封钝化层结构公开(公告)号：US20080001292A1
公开(公告)日：2008-01-03
申请号：US11767559
申请日：2007-06-25
IPC分类号： H01L23/52 , H01L21/4763
摘要： A thin-film capacitor structure fabricated on a substrate is provided. The thin-film capacitor includes a pyrochlore or perovskite alkali earth dielectric layer between a plurality of electrode layers. A pyrochlore or perovskite hydrogen-gettering barrier layer is deposited over the thin-film capacitor. A hermetic seal layer is deposited over the barrier layer by plasma enhanced chemical vapor deposition (PECVD), low pressure chemical vapor deposition (LPCVD), or some other hydrogen-producing method. The hydrogen-gettering barrier layer prevents hydrogen from reacting with and degrading the properties of the dielectric material, thereby enhancing the durability and other features of the capacitor.
摘要翻译： 提供了在基板上制造的薄膜电容器结构。 薄膜电容器包括在多个电极层之间的烧绿石或钙钛矿碱土介电层。 在薄膜电容器上沉积烧绿石或钙钛矿吸氢阻挡层。 通过等离子体增强化学气相沉积（PECVD），低压化学气相沉积（LPCVD）或一些其它制氢方法，在阻挡层上沉积密封层。 吸氢阻挡层防止氢与介电材料的性质发生反应并降低其性能，从而提高电容器的耐久性和其它特征。
-
3.发明授权公开(公告)号：US08461637B2
公开(公告)日：2013-06-11
申请号：US12731990
申请日：2010-03-25
IPC分类号： H01L21/02
CPC分类号： H01L28/40 , H01G13/00 , H01L21/02112 , H01L21/02172 , H01L21/283 , H01L28/57
摘要： An electronic component is provided on a substrate. A thin-film capacitor is attached to the substrate, the thin-film capacitor includes a pyrochlore or perovskite dielectric layer between a plurality of electrode layers, the electrode layers being formed from a conductive thin-film material. A reactive barrier layer is deposited over the thin-film capacitor. The reactive barrier layer includes an oxide having an element with more than one valence state, wherein the element with more than one valence state has a molar ratio of the molar amount of the element that is in its highest valence state to its total molar amount in the barrier of 50% to 100%. Optionally layers of other materials may intervene between the capacitor and reactive barrier layer. The reactive barrier layer may be paraelectric and the electronic component may be a tunable capacitor.
摘要翻译： 电子部件设置在基板上。 薄膜电容器附着在基板上，薄膜电容器包括在多个电极层之间的烧绿石或钙钛矿电介质层，电极层由导电薄膜材料形成。 反应性阻挡层沉积在薄膜电容器上。 反应性阻挡层包括具有多于一个价态的元素的氧化物，其中具有多于一个价态的元素具有处于其最高价态的元素的摩尔量与其总摩尔量的摩尔比， 50％至100％的障碍。 任选地，其它材料层可以介于电容器和反应性阻挡层之间。 反应性阻挡层可以是顺电性的，并且电子部件可以是可调电容器。
-
4.发明申请公开(公告)号：US20090121316A1
公开(公告)日：2009-05-14
申请号：US12325683
申请日：2008-12-01
CPC分类号： H01L28/40 , H01G13/00 , H01L21/02112 , H01L21/02172 , H01L21/283 , H01L28/57
摘要： An electronic component is provided on a substrate. A thin-film capacitor is attached to the substrate, the thin-film capacitor includes a pyrochlore or perovskite dielectric layer between a plurality of electrode layers, the electrode layers being formed from a conductive thin-film material. A reactive barrier layer is deposited over the thin-film capacitor. The reactive barrier layer includes an oxide having an element with more than one valence state, wherein the element with more than one valence state has a molar ratio of the molar amount of the element that is in its highest valence state to its total molar amount in the barrier of 50% to 100%. Optionally layers of other materials may intervene between the capacitor and reactive barrier layer. The reactive barrier layer may be paraelectric and the electronic component may be a tunable capacitor.
摘要翻译： 电子部件设置在基板上。 薄膜电容器附着在基板上，薄膜电容器包括在多个电极层之间的烧绿石或钙钛矿电介质层，电极层由导电薄膜材料形成。 反应性阻挡层沉积在薄膜电容器上。 反应性阻挡层包括具有多于一个价态的元素的氧化物，其中具有多于一个价态的元素具有处于其最高价态的元素的摩尔量与其总摩尔量的摩尔比， 50％至100％的障碍。 任选地，其它材料层可以介于电容器和反应性阻挡层之间。 反应性阻挡层可以是顺电性的，并且电子部件可以是可调电容器。
-
公开(公告)号：US08361811B2
公开(公告)日：2013-01-29
申请号：US12325683
申请日：2008-12-01
IPC分类号： H01L21/00
CPC分类号： H01L28/40 , H01G13/00 , H01L21/02112 , H01L21/02172 , H01L21/283 , H01L28/57
摘要： An electronic component is provided on a substrate. A thin-film capacitor is attached to the substrate, the thin-film capacitor includes a pyrochlore or perovskite dielectric layer between a plurality of electrode layers, the electrode layers being formed from a conductive thin-film material. A reactive barrier layer is deposited over the thin-film capacitor. The reactive barrier layer includes an oxide having an element with more than one valence state, wherein the element with more than one valence state has a molar ratio of the molar amount of the element that is in its highest valence state to its total molar amount in the barrier of 50% to 100%. Optionally layers of other materials may intervene between the capacitor and reactive barrier layer. The reactive barrier layer may be paraelectric and the electronic component may be a tunable capacitor.
-
公开(公告)号：US20060274476A1
公开(公告)日：2006-12-07
申请号：US11396447
申请日：2006-04-03
IPC分类号： H01G4/228
CPC分类号： H01L23/5223 , H01G4/33 , H01G4/40 , H01L27/016 , H01L28/55 , H01L28/65 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： In accordance with the teachings described herein, low loss thin film capacitors and methods of manufacturing the same are provided. A low loss thin-film capacitor structure may include first and second electrodes and a polar dielectric between the first and second electrodes. The polar dielectric and the first and second electrodes collectively form a capacitor having an operational frequency band. The capacitor structure may also include one or more layers that affect the acoustic properties of the thin-film capacitor structure such that the capacitor absorbs RF energy at a frequency that is outside of the operational frequency band. A method of manufacturing a low loss thin-film capacitor may include the steps of fabricating a capacitor structure that includes a polar dielectric material, and modifying the acoustic properties of the capacitor structure such that the polar capacitor absorbs RF energy at a frequency that is outside of the operating frequency band of the capacitor structure.
摘要翻译： 根据本文所述的教导，提供了低损耗薄膜电容器及其制造方法。 低损耗薄膜电容器结构可以包括第一和第二电极以及第一和第二电极之间的极性电介质。 极性电介质和第一和第二电极共同形成具有工作频带的电容器。 电容器结构还可以包括影响薄膜电容器结构的声学特性的一个或多个层，使得电容器以在工作频带之外的频率吸收RF能量。 制造低损耗薄膜电容器的方法可以包括制造包括极性介电材料的电容器结构的步骤，并且改变电容器结构的声学特性，使得极性电容器以在外部的频率吸收RF能量 的电容器结构的工作频带。
-
公开(公告)号：US08194387B2
公开(公告)日：2012-06-05
申请号：US12407802
申请日：2009-03-20
CPC分类号： H01G5/38 , H01G7/02 , H01G7/06 , H01L27/016 , H01L27/0808 , H01L28/60
摘要： A multi-layered capacitor includes three or more capacitor layers. A first layer includes a first DC-biased, tunable capacitor. A second layer, acoustically coupled to the first layer, includes a second DC-biased, tunable capacitor. A third layer, acoustically coupled to the second layer, includes a third DC-biased, tunable capacitor. Each dielectric of the first, second, and third capacitors has a resonance of about the same frequency, within 5%, and inner electrodes of the first, second, and third capacitors have a resonance of about the same frequency, within 5%. The resonance of each layer is a function of at least thickness, density, and material. The first, second, and third layers are biased to generate destructive acoustic interference, and the multi-layer capacitor is operable at frequencies greater than 0.1 GHz.
摘要翻译： 多层电容器包括三个或更多个电容器层。 第一层包括第一DC偏置可调电容器。 声耦合到第一层的第二层包括第二DC偏置的可调电容器。 声耦合到第二层的第三层包括第三直流偏置可调电容器。 第一，第二和第三电容器的每个电介质具有在5％以内约相同频率的共振，并且第一，第二和第三电容器的内部电极具有大约相同频率的共振，在5％以内。 每个层的共振至少是厚度，密度和材料的函数。 第一，第二和第三层被偏置以产生破坏性声学干扰，并且多层电容器可在大于0.1GHz的频率下操作。
-
公开(公告)号：US20100238602A1
公开(公告)日：2010-09-23
申请号：US12407802
申请日：2009-03-20
IPC分类号： H01G7/06
CPC分类号： H01G5/38 , H01G7/02 , H01G7/06 , H01L27/016 , H01L27/0808 , H01L28/60
摘要： A multi-layered capacitor includes three or more capacitor layers. A first layer includes a first DC-biased, tunable capacitor. A second layer, acoustically coupled to the first layer, includes a second DC-biased, tunable capacitor. A third layer, acoustically coupled to the second layer, includes a third DC-biased, tunable capacitor. Each dielectric of the first, second, and third capacitors has a resonance of about the same frequency, within 5%, and inner electrodes of the first, second, and third capacitors have a resonance of about the same frequency, within 5%. The resonance of each layer is a function of at least thickness, density, and material. The first, second, and third layers are biased to generate destructive acoustic interference, and the multi-layer capacitor is operable at frequencies greater than 0.1 GHz.
摘要翻译： 多层电容器包括三个或更多个电容器层。 第一层包括第一DC偏置可调电容器。 声耦合到第一层的第二层包括第二DC偏置的可调电容器。 声耦合到第二层的第三层包括第三直流偏置可调电容器。 第一，第二和第三电容器的每个电介质具有在5％以内约相同频率的共振，并且第一，第二和第三电容器的内部电极具有大约相同频率的共振，在5％以内。 每个层的共振至少是厚度，密度和材料的函数。 第一，第二和第三层被偏置以产生破坏性声学干扰，并且多层电容器可在大于0.1GHz的频率下操作。
-
公开(公告)号：US08693162B2
公开(公告)日：2014-04-08
申请号：US13467641
申请日：2012-05-09
CPC分类号： H01G5/38 , H01G7/02 , H01G7/06 , H01L27/016 , H01L27/0808 , H01L28/60
摘要： A multi-layered capacitor includes three or more capacitor layers. A first layer includes a first DC-biased, tunable capacitor. A second layer, acoustically coupled to the first layer, includes a second DC-biased, tunable capacitor. A third layer, acoustically coupled to the second layer, includes a third DC-biased, tunable capacitor. Each dielectric of the first, second, and third capacitors has a resonance of about the same frequency, within 5%, and inner electrodes of the first, second, and third capacitors have a resonance of about the same frequency, within 5%. The resonance of each layer is a function of at least thickness, density, and material. The first, second, and third layers are biased to generate destructive acoustic interference, and the multi-layer capacitor is operable at frequencies greater than 0.1 GHz.
摘要翻译： 多层电容器包括三个或更多个电容器层。 第一层包括第一DC偏置可调电容器。 声耦合到第一层的第二层包括第二DC偏置的可调电容器。 声耦合到第二层的第三层包括第三直流偏置可调电容器。 第一，第二和第三电容器的每个电介质具有在5％以内约相同频率的共振，并且第一，第二和第三电容器的内部电极具有大约相同频率的共振，在5％以内。 每个层的共振至少是厚度，密度和材料的函数。 第一，第二和第三层被偏置以产生破坏性声学干扰，并且多层电容器可在大于0.1GHz的频率下操作。
-
公开(公告)号：US20120218733A1
公开(公告)日：2012-08-30
申请号：US13467641
申请日：2012-05-09
IPC分类号： H05K7/00
CPC分类号： H01G5/38 , H01G7/02 , H01G7/06 , H01L27/016 , H01L27/0808 , H01L28/60
摘要： A multi-layered capacitor includes three or more capacitor layers. A first layer includes a first DC-biased, tunable capacitor. A second layer, acoustically coupled to the first layer, includes a second DC-biased, tunable capacitor. A third layer, acoustically coupled to the second layer, includes a third DC-biased, tunable capacitor. Each dielectric of the first, second, and third capacitors has a resonance of about the same frequency, within 5%, and inner electrodes of the first, second, and third capacitors have a resonance of about the same frequency, within 5%. The resonance of each layer is a function of at least thickness, density, and material. The first, second, and third layers are biased to generate destructive acoustic interference, and the multi-layer capacitor is operable at frequencies greater than 0.1 GHz.
摘要翻译： 多层电容器包括三个或更多个电容器层。 第一层包括第一DC偏置可调电容器。 声耦合到第一层的第二层包括第二DC偏置的可调电容器。 声耦合到第二层的第三层包括第三直流偏置可调电容器。 第一，第二和第三电容器的每个电介质具有在5％以内约相同频率的共振，并且第一，第二和第三电容器的内部电极具有大约相同频率的共振，在5％以内。 每个层的共振至少是厚度，密度和材料的函数。 第一，第二和第三层被偏置以产生破坏性声学干扰，并且多层电容器可在大于0.1GHz的频率下操作。
-
-
-
-
-
-
-
-
-
搜索结果
14 条记录 (耗时 0.025 秒)