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1.发明授权公开(公告)号：US08461637B2
公开(公告)日：2013-06-11
申请号：US12731990
申请日：2010-03-25
IPC分类号： H01L21/02
CPC分类号： H01L28/40 , H01G13/00 , H01L21/02112 , H01L21/02172 , H01L21/283 , H01L28/57
摘要： An electronic component is provided on a substrate. A thin-film capacitor is attached to the substrate, the thin-film capacitor includes a pyrochlore or perovskite dielectric layer between a plurality of electrode layers, the electrode layers being formed from a conductive thin-film material. A reactive barrier layer is deposited over the thin-film capacitor. The reactive barrier layer includes an oxide having an element with more than one valence state, wherein the element with more than one valence state has a molar ratio of the molar amount of the element that is in its highest valence state to its total molar amount in the barrier of 50% to 100%. Optionally layers of other materials may intervene between the capacitor and reactive barrier layer. The reactive barrier layer may be paraelectric and the electronic component may be a tunable capacitor.
摘要翻译： 电子部件设置在基板上。 薄膜电容器附着在基板上，薄膜电容器包括在多个电极层之间的烧绿石或钙钛矿电介质层，电极层由导电薄膜材料形成。 反应性阻挡层沉积在薄膜电容器上。 反应性阻挡层包括具有多于一个价态的元素的氧化物，其中具有多于一个价态的元素具有处于其最高价态的元素的摩尔量与其总摩尔量的摩尔比， 50％至100％的障碍。 任选地，其它材料层可以介于电容器和反应性阻挡层之间。 反应性阻挡层可以是顺电性的，并且电子部件可以是可调电容器。
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2.发明申请公开(公告)号：US20100176487A1
公开(公告)日：2010-07-15
申请号：US12731990
申请日：2010-03-25
CPC分类号： H01L28/40 , H01G13/00 , H01L21/02112 , H01L21/02172 , H01L21/283 , H01L28/57
摘要： An electronic component is provided on a substrate. A thin-film capacitor is attached to the substrate, the thin-film capacitor includes a pyrochlore or perovskite dielectric layer between a plurality of electrode layers, the electrode layers being formed from a conductive thin-film material. A reactive barrier layer is deposited over the thin-film capacitor. The reactive barrier layer includes an oxide having an element with more than one valence state, wherein the element with more than one valence state has a molar ratio of the molar amount of the element that is in its highest valence state to its total molar amount in the barrier of 50% to 100%. Optionally layers of other materials may intervene between the capacitor and reactive barrier layer. The reactive barrier layer may be paraelectric and the electronic component may be a tunable capacitor.
摘要翻译： 电子部件设置在基板上。 薄膜电容器附着在基板上，薄膜电容器包括在多个电极层之间的烧绿石或钙钛矿电介质层，电极层由导电薄膜材料形成。 反应性阻挡层沉积在薄膜电容器上。 反应性阻挡层包括具有多于一个价态的元素的氧化物，其中具有多于一个价态的元素具有处于其最高价态的元素的摩尔量与其总摩尔量的摩尔比， 50％至100％的障碍。 任选地，其它材料层可以介于电容器和反应性阻挡层之间。 反应性阻挡层可以是顺电性的，并且电子部件可以是可调电容器。
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3.发明申请Hermetic Passivation Layer Structure for Capacitors with Perovskite or Pyrochlore Phase Dielectrics 审中-公开具有钙钛矿或热解相电介质的电容器的密封钝化层结构公开(公告)号：US20080001292A1
公开(公告)日：2008-01-03
申请号：US11767559
申请日：2007-06-25
IPC分类号： H01L23/52 , H01L21/4763
摘要： A thin-film capacitor structure fabricated on a substrate is provided. The thin-film capacitor includes a pyrochlore or perovskite alkali earth dielectric layer between a plurality of electrode layers. A pyrochlore or perovskite hydrogen-gettering barrier layer is deposited over the thin-film capacitor. A hermetic seal layer is deposited over the barrier layer by plasma enhanced chemical vapor deposition (PECVD), low pressure chemical vapor deposition (LPCVD), or some other hydrogen-producing method. The hydrogen-gettering barrier layer prevents hydrogen from reacting with and degrading the properties of the dielectric material, thereby enhancing the durability and other features of the capacitor.
摘要翻译： 提供了在基板上制造的薄膜电容器结构。 薄膜电容器包括在多个电极层之间的烧绿石或钙钛矿碱土介电层。 在薄膜电容器上沉积烧绿石或钙钛矿吸氢阻挡层。 通过等离子体增强化学气相沉积（PECVD），低压化学气相沉积（LPCVD）或一些其它制氢方法，在阻挡层上沉积密封层。 吸氢阻挡层防止氢与介电材料的性质发生反应并降低其性能，从而提高电容器的耐久性和其它特征。
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