公开(公告)号：US07510927B2

公开(公告)日：2009-03-31

申请号：US10330842

申请日：2002-12-26

申请人： Mark Bohr ,  Julie Tsai

发明人： Mark Bohr ,  Julie Tsai

IPC分类号： H01L21/84

CPC分类号： H01L21/76264

摘要： The present invention discloses a method including: providing a substrate; forming a buried oxide layer over the substrate; forming a thin silicon body layer over the buried oxide layer, the thin silicon body layer having a thickness of 3-40 nanometers; forming a pad oxide layer over the thin silicon body layer; forming a silicon nitride layer over the pad oxide layer; forming a photoresist over the silicon nitride layer; forming an opening in the photoresist; removing the silicon nitride layer in the opening; partially or completely removing the pad oxide layer in the opening; removing the photoresist over the silicon nitride layer; forming a field oxide layer from the thin silicon body layer in the opening; removing the silicon nitride layer over the pad oxide layer; and removing the pad oxide layer over the thin silicon body layer.The present invention also discloses a structure including: a substrate; a buried oxide layer located over the substrate; a thin silicon body layer located over the buried oxide layer, the thin silicon body layer including active areas separated by isolation regions, the isolation regions having a modified bird's beak length that is 30-60% of a thickness of the thin silicon body layer; and a fully-depleted device located in each of the active regions.

摘要翻译： 本发明公开了一种方法，包括：提供基板; 在衬底上形成掩埋氧化层; 在所述掩埋氧化物层上形成薄的硅体层，所述薄硅体层的厚度为3-40纳米; 在所述薄硅体层上形成衬垫氧化物层; 在所述焊盘氧化物层上形成氮化硅层; 在氮化硅层上形成光致抗蚀剂; 在光致抗蚀剂中形成开口; 去除开口中的氮化硅层; 部分地或完全地去除开口中的垫氧化物层; 去除氮化硅层上的光致抗蚀剂; 从所述开口中的所述薄硅体层形成场氧化物层; 去除所述衬垫氧化物层上的所述氮化硅层; 以及去除所述薄硅体层上的所述衬垫氧化物层。 本发明还公开了一种结构，包括：基板; 位于衬底上方的掩埋氧化物层; 位于所述掩埋氧化物层上方的薄硅体层，所述薄硅体层包括由隔离区隔开的有效区域，所述隔离区域具有所述薄硅体层的厚度的30-60％的改进的鸟嘴长度; 以及位于每个活动区域中的完全耗尽的装置。

公开(公告)号：US5828084A

公开(公告)日：1998-10-27

申请号：US411203

申请日：1995-03-27

申请人： Takashi Noguchi ,  Rafael Reif ,  Julie Tsai ,  Andrew J. Tang

发明人： Takashi Noguchi ,  Rafael Reif ,  Julie Tsai ,  Andrew J. Tang

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L29/786 ,  H01L29/04 ,  H01L29/76

CPC分类号： H01L29/66742 ,  H01L29/78675 ,  H01L29/78678 ,  H01L29/78684 ,  Y10S438/933

摘要： The present invention pertains to a high-performance thin film transistor having a gate and an active region, whose active region comprises a poly-Si.sub.1 -.sub.x Ge.sub.x alloy material and a channel layer of silicon, in which the channel layer of silicon is interposed between the poly-Si.sub.1-x Ge.sub.x alloy material and the gate, and a method for fabricating such a high-performance thin film transistor.

摘要翻译： 本发明涉及一种具有栅极和有源区的高性能薄膜晶体管，其有源区包括多晶Si1-xGex合金材料和硅沟道层，其中沟道层硅介于 多晶Si1-xGex合金材料和栅极，以及制造这种高性能薄膜晶体管的方法。

公开(公告)号：US06638797B2

公开(公告)日：2003-10-28

申请号：US10232700

申请日：2002-09-03

申请人： Takashi Noguchi ,  Rafael Reif ,  Julie Tsai ,  Andrew J. Tang

发明人： Takashi Noguchi ,  Rafael Reif ,  Julie Tsai ,  Andrew J. Tang

IPC分类号： H01L21339

CPC分类号： H01L29/66742 ,  H01L29/78675 ,  H01L29/78678 ,  H01L29/78684 ,  Y10S438/933

摘要： The present invention pertains to a high-performance thin film transistor having a gate and an active region, whose active region comprises a poly-Si1-xGex alloy material and a channel layer of silicon, in which the channel layer of silicon is interposed between the poly-Si1-xGex alloy material and the gate, and a method for fabricating such a high-performance thin film transistor.

摘要翻译： 本发明涉及一种具有栅极和有源区的高性能薄膜晶体管，其有源区包括多晶Si1-xGex合金材料和硅沟道层，其中沟道层硅介于 多晶Si1-xGex合金材料和栅极，以及制造这种高性能薄膜晶体管的方法。

公开(公告)号：US06765273B1

公开(公告)日：2004-07-20

申请号：US09115405

申请日：1998-07-14

申请人： Robert S. Chau ,  Ebrahim Andideh ,  Mitch C. Taylor ,  Chia-Hong Jan ,  Julie Tsai

发明人： Robert S. Chau ,  Ebrahim Andideh ,  Mitch C. Taylor ,  Chia-Hong Jan ,  Julie Tsai

IPC分类号： H01L2976

CPC分类号： H01L29/66515 ,  H01L21/28525 ,  H01L21/28562 ,  H01L21/823814 ,  H01L21/823835 ,  H01L21/823878 ,  H01L29/41766 ,  H01L29/41783 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/66636

摘要： A semiconductor device having a novel spacer structure and method of fabrication. The present invention describes a semiconductor device which has an electrode with a first thickness. A silicide layer having a second thickness is formed on the electrode. A sidewall spacer which is formed adjacent to the electrode has a height which is greater than the sum of the thickness of the electrode and the thickness of the silicide layer.

公开(公告)号：US06518155B1

公开(公告)日：2003-02-11

申请号：US08884912

申请日：1997-06-30

申请人： Robert S. Chau ,  Ebrahim Andideh ,  Mitch C. Taylor ,  Chia-Hong Jan ,  Julie Tsai

发明人： Robert S. Chau ,  Ebrahim Andideh ,  Mitch C. Taylor ,  Chia-Hong Jan ,  Julie Tsai

IPC分类号： H01L213205

CPC分类号： H01L29/66515 ,  H01L21/28525 ,  H01L21/28562 ,  H01L21/823814 ,  H01L21/823835 ,  H01L21/823878 ,  H01L29/41766 ,  H01L29/41783 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/66636

摘要： A semiconductor device having a novel spacer structure and method of fabrication. The present invention describes a semiconductor device which has an electrode with a first thickness. A silicide layer having a second thickness is formed on the electrode. A sidewall spacer which is formed adjacent to the electrode has a height which is greater than the sum of the thickness of the electrode and the thickness of the silicide layer.

公开(公告)号：US20140287417A1

公开(公告)日：2014-09-25

申请号：US14200744

申请日：2014-03-07

申请人： Peter Meldgaard ,  Boe Sorensen ,  Julie Tsai ,  Wei Wen ,  Lin Wu

发明人： Peter Meldgaard ,  Boe Sorensen ,  Julie Tsai ,  Wei Wen ,  Lin Wu

IPC分类号： C12Q1/68

CPC分类号： C12Q1/6886 ,  A61K31/517 ,  A61K31/5377 ,  C12Q2600/106 ,  C12Q2600/156

摘要： Improved methods of assessing status of a solid-tumor cancer in a subject involving detection of tumor-associated mutations in the subject's blood.

摘要翻译： 改进的评估实体肿瘤癌症状态的方法涉及检测受试者血液中肿瘤相关突变。

公开(公告)号：US20140272953A1

公开(公告)日：2014-09-18

申请号：US14200522

申请日：2014-03-07

申请人： Barbara Klughammer ,  Peter Meldgaard ,  Boe Sorensen ,  Julie Tsai ,  Wei Wen ,  Lin Wu

发明人： Barbara Klughammer ,  Peter Meldgaard ,  Boe Sorensen ,  Julie Tsai ,  Wei Wen ,  Lin Wu

IPC分类号： C12Q1/68

CPC分类号： C12Q1/6881 ,  C12Q1/6886 ,  C12Q2600/106 ,  C12Q2600/156

摘要： Improved methods of assessing status of a solid tumor cancer in a subject involving detection of tumor-associated mutations in the subject's blood.

摘要翻译： 改进的评估实体肿瘤癌症状态的方法涉及检测受试者血液中肿瘤相关突变。

公开(公告)号：US06777759B1

公开(公告)日：2004-08-17

申请号：US09654315

申请日：2000-09-01

申请人： Robert S. Chau ,  Ebrahim Andideh ,  Mitch C. Taylor ,  Chia-Hong Jan ,  Julie Tsai

发明人： Robert S. Chau ,  Ebrahim Andideh ,  Mitch C. Taylor ,  Chia-Hong Jan ,  Julie Tsai

IPC分类号： H01L2976

CPC分类号： H01L29/66515 ,  H01L21/28525 ,  H01L21/28562 ,  H01L21/823814 ,  H01L21/823835 ,  H01L21/823878 ,  H01L29/41766 ,  H01L29/41783 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/66636

摘要： A semiconductor device having a novel spacer structure and method of fabrication. The present invention describes a semiconductor device which has an electrode with a first thickness. A silicide layer having a second thickness is formed on the electrode. A sidewall spacer which is formed adjacent to the electrode has a height which is greater than the sum of the thickness of the electrode and the thickness of the silicide layer.

摘要翻译： 一种具有新型间隔结构和制造方法的半导体器件。 本发明描述了具有第一厚度的电极的半导体器件。 在电极上形成具有第二厚度的硅化物层。 与电极相邻形成的侧壁间隔物的高度大于电极的厚度和硅化物层的厚度之和。

公开(公告)号：US06444509B1

公开(公告)日：2002-09-03

申请号：US08997326

申请日：1997-12-23

申请人： Takashi Noguchi ,  Rafael Reif ,  Julie Tsai ,  Andrew J. Tang

发明人： Takashi Noguchi ,  Rafael Reif ,  Julie Tsai ,  Andrew J. Tang

IPC分类号： H01L2100

CPC分类号： H01L29/66742 ,  H01L29/78675 ,  H01L29/78678 ,  H01L29/78684 ,  Y10S438/933

摘要： The present invention pertains to a high-performance thin film transistor having a gate and an active region, whose active region comprises a poly-Si1−xGex alloy material and a channel layer of silicon, in which the channel layer of silicon is interposed between the poly-Si1−xGex alloy material and the gate, and a method for fabricating such a high-performance thin film transistor.

摘要翻译： 本发明涉及一种具有栅极和有源区的高性能薄膜晶体管，其有源区包括多晶Si1-xGex合金材料和硅沟道层，其中沟道层硅介于 多晶Si1-xGex合金材料和栅极，以及制造这种高性能薄膜晶体管的方法。