公开(公告)号：US20050087753A1

公开(公告)日：2005-04-28

申请号：US10693803

申请日：2003-10-24

申请人： Mark D'Evelyn ,  Xian-An Cao ,  Anping Zhang ,  Steven LeBoeuf ,  Huicong Hong ,  Dong-Sil Park ,  Kristi Narang

发明人： Mark D'Evelyn ,  Xian-An Cao ,  Anping Zhang ,  Steven LeBoeuf ,  Huicong Hong ,  Dong-Sil Park ,  Kristi Narang

IPC分类号： C30B9/00 ,  H01L33/00 ,  H01L33/10 ,  H01L21/00

CPC分类号： H01L33/105 ,  C30B9/00 ,  C30B29/403 ,  C30B29/406 ,  H01L33/007 ,  Y10T117/1064

摘要： In a method for producing a resonant cavity light emitting device, a seed gallium nitride crystal (14) and a source material (30) are arranged in a nitrogen-containing superheated fluid (44) disposed in a sealed container (10) disposed in a multiple-zone furnace (50). Gallium nitride material is grown on the seed gallium nitride crystal (14) to produce a single-crystal gallium nitride substrate (106, 106′). Said growing includes applying a temporally varying thermal gradient (100, 100′, 102, 102′) between the seed gallium nitride crystal (14) and the source material (30) to produce an increasing growth rate during at least a portion of the growing. A stack of group III-nitride layers (112) is deposited on the single-crystal gallium nitride substrate (106, 106′), including a first mirror sub-stack (116) and an active region (120) adapted for fabrication into one or more resonant cavity light emitting devices (108, 150, 160, 170, 180).

摘要翻译： 在制造谐振腔发光器件的方法中，将氮化镓晶体（14）和源极材料（30）布置在设置在密封容器（10）中的含氮过热流体（44）中， 多区炉（50）。 在氮化镓晶体（14）上生长氮化镓材料以制造单晶氮化镓衬底（106,106'）。 所述生长包括在种子氮化镓晶体（14）和源材料（30）之间施加时间上不同的热梯度（100,100'，102,102'），以在至少一部分生长期间产生增加的生长速率 。 一组III族氮化物层（112）沉积在单晶氮化镓衬底（106,106'）上，其包括第一反射镜子层（116）和适于制造成一体的有源区（120） 或更多的谐振腔发光器件（108,150,160,170,180）。

公开(公告)号：US20060118799A1

公开(公告)日：2006-06-08

申请号：US11295627

申请日：2005-12-06

申请人： Mark D'Evelyn ,  Xian-An Cao ,  Anping Zhang ,  Steven LeBoeuf ,  Huicong Hong ,  Dong-Sil Park ,  Kristi Narang

发明人： Mark D'Evelyn ,  Xian-An Cao ,  Anping Zhang ,  Steven LeBoeuf ,  Huicong Hong ,  Dong-Sil Park ,  Kristi Narang

IPC分类号： H01L33/00

CPC分类号： H01L33/105 ,  C30B9/00 ,  C30B29/403 ,  C30B29/406 ,  H01L33/007 ,  Y10T117/1064

摘要： A method may produce a resonant cavity light emitting device. A seed gallium nitride crystal and a source material in a nitrogen-containing superheated fluid may provide a medium for mass transport of gallium nitride precursors therebetween. A seed crystal surface may be prepared by applying a first thermal profile between the seed gallium nitride crystal and the source material. Gallium nitride material may be grown on the prepared surface of the seed gallium nitride crystal by applying a second thermal profile between the seed gallium nitride crystal and the source material while the seed gallium nitride crystal and the source material are in the nitrogen-containing superheated fluid. A stack of group III-nitride layers may be deposited on the single-crystal gallium nitride substrate. The stack may include a first mirror sub-stack and an active region adaptable for fabrication into one or more resonant cavity light emitting devices.

公开(公告)号：US07582498B2

公开(公告)日：2009-09-01

申请号：US11295627

申请日：2005-12-06

申请人： Mark Philip D'Evelyn ,  Xian-An Cao ,  Anping Zhang ,  Steven Francis LeBoeuf ,  Huicong Hong ,  Dong-Sil Park ,  Kristi Jean Narang

发明人： Mark Philip D'Evelyn ,  Xian-An Cao ,  Anping Zhang ,  Steven Francis LeBoeuf ,  Huicong Hong ,  Dong-Sil Park ,  Kristi Jean Narang

IPC分类号： H01L21/00 ,  C30B15/00

CPC分类号： H01L33/105 ,  C30B9/00 ,  C30B29/403 ,  C30B29/406 ,  H01L33/007 ,  Y10T117/1064

摘要： A method may produce a resonant cavity light emitting device. A seed gallium nitride crystal and a source material in a nitrogen-containing superheated fluid may provide a medium for mass transport of gallium nitride precursors therebetween. A seed crystal surface may be prepared by applying a first thermal profile between the seed gallium nitride crystal and the source material. Gallium nitride material may be grown on the prepared surface of the seed gallium nitride crystal by applying a second thermal profile between the seed gallium nitride crystal and the source material while the seed gallium nitride crystal and the source material are in the nitrogen-containing superheated fluid. A stack of group III-nitride layers may be deposited on the single-crystal gallium nitride substrate. The stack may include a first mirror sub-stack and an active region adaptable for fabrication into one or more resonant cavity light emitting devices.

摘要翻译： 一种方法可以产生谐振腔发光器件。 种子氮化镓晶体和含氮过热流体中的源材料可以提供用于其间的氮化镓前体的质量传输的介质。 可以通过在种子氮化镓晶体和源材料之间施加第一热分布来制备晶种表面。 可以通过在种子氮化镓晶体和源材料之间施加第二热分布而在种子氮化镓晶体的制备表面上生长氮化镓材料，而种子氮化镓晶体和源材料在含氮过热流体 。 可以在单晶氮化镓衬底上沉积III族氮化物层的堆叠。 堆叠可以包括第一镜子子堆叠和适于制造成一个或多个谐振腔发光器件的有源区域。

公开(公告)号：US07009215B2

公开(公告)日：2006-03-07

申请号：US10693803

申请日：2003-10-24

申请人： Mark Philip D'Evelyn ,  Xian-An Cao ,  Anping Zhang ,  Steven Francis LeBoeuf ,  Huicong Hong ,  Dong-Sil Park ,  Kristi Jean Narang

发明人： Mark Philip D'Evelyn ,  Xian-An Cao ,  Anping Zhang ,  Steven Francis LeBoeuf ,  Huicong Hong ,  Dong-Sil Park ,  Kristi Jean Narang

IPC分类号： H01L33/00

CPC分类号： H01L33/105 ,  C30B9/00 ,  C30B29/403 ,  C30B29/406 ,  H01L33/007 ,  Y10T117/1064

摘要： In a method for producing a resonant cavity light emitting device, a seed gallium nitride crystal (14) and a source material (30) are arranged in a nitrogen-containing superheated fluid (44) disposed in a sealed container (10) disposed in a multiple-zone furnace (50). Gallium nitride material is grown on the seed gallium nitride crystal (14) to produce a single-crystal gallium nitride substrate (106, 106′). Said growing includes applying a temporally varying thermal gradient (100, 100′, 102, 102′) between the seed gallium nitride crystal (14) and the source material (30) to produce an increasing growth rate during at least a portion of the growing. A stack of group III-nitride layers (112) is deposited on the single-crystal gallium nitride substrate (106, 106′), including a first mirror sub-stack (116) and an active region (120) adapted for fabrication into one or more resonant cavity light emitting devices (108, 150, 160, 170, 180).

摘要翻译： 在制造谐振腔发光器件的方法中，将氮化镓晶体（14）和源极材料（30）布置在设置在密封容器（10）中的含氮过热流体（44）中， 多区炉（50）。 在氮化镓晶体（14）上生长氮化镓材料以制造单晶氮化镓衬底（106,106'）。 所述生长包括在种子氮化镓晶体（14）和源材料（30）之间施加时间上不同的热梯度（100,100'，102,102'），以在至少一部分生长期间产生增加的生长速率 。 一组III族氮化物层（112）沉积在单晶氮化镓衬底（106,106'）上，其包括第一反射镜子层（116）和适于制造成一体的有源区（120） 或更多的谐振腔发光器件（108,150,160,170,180）。

公开(公告)号：US09279193B2

公开(公告)日：2016-03-08

申请号：US11558048

申请日：2006-11-09

申请人： Mark Philip D'Evelyn ,  Kristi Jean Narang ,  Dong-Sil Park ,  Huicong Hong ,  Xian-An Cao ,  Larry Qiang Zeng

发明人： Mark Philip D'Evelyn ,  Kristi Jean Narang ,  Dong-Sil Park ,  Huicong Hong ,  Xian-An Cao ,  Larry Qiang Zeng

IPC分类号： C30B23/02 ,  C30B25/02 ,  C30B9/08 ,  C30B19/02 ,  C30B19/12

CPC分类号： C30B7/005 ,  C30B7/105 ,  C30B9/08 ,  C30B19/02 ,  C30B19/12 ,  C30B25/02 ,  C30B25/20 ,  C30B29/406 ,  C30B29/68

摘要： A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm−1, with an absorbance per unit thickness of greater than about 0.01 cm−1. In one embodiment, the composition may have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.

摘要翻译： 生长结晶组合物的方法，第一结晶组合物可包括镓和氮。 结晶组合物可以在约3175cm -1处具有红外吸收峰，每单位厚度的吸光度大于约0.01cm -1。 在一个实施方案中，组合物可以具有以小于约3×1018 /立方厘米的浓度存在的量的量，并且在确定的第一结晶组合物体积中可以没有二维平面边界缺陷。

公开(公告)号：US20120017825A1

公开(公告)日：2012-01-26

申请号：US11558048

申请日：2006-11-09

申请人： Mark Philip D'Evelyn ,  Kristi Jean Narang ,  Dong-Sil Park ,  Huicong Hong ,  Xian-An Cao ,  Larry Qiang Zeng

发明人： Mark Philip D'Evelyn ,  Kristi Jean Narang ,  Dong-Sil Park ,  Huicong Hong ,  Xian-An Cao ,  Larry Qiang Zeng

IPC分类号： C30B19/08 ,  C30B7/10 ,  H01L21/02 ,  C30B25/04 ,  B29C35/02 ,  C30B19/00 ,  C30B25/02

CPC分类号： C30B7/005 ,  C30B7/105 ,  C30B9/08 ,  C30B19/02 ,  C30B19/12 ,  C30B25/02 ,  C30B25/20 ,  C30B29/406 ,  C30B29/68

摘要： A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm−1, with an absorbance per unit thickness of greater than about 0.01 cm−1. In one embodiment, the composition ay have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.

摘要翻译： 生长结晶组合物的方法，第一结晶组合物可包括镓和氮。 结晶组合物可以在约3175cm -1处具有红外吸收峰，每单位厚度的吸光度大于约0.01cm -1。 在一个实施方案中，组合物a y具有以小于约3×1018 /立方厘米的浓度存在的氧量，并且在确定的第一结晶组合物体积中可以没有二维平面边界缺陷。

公开(公告)号：US20070097366A1

公开(公告)日：2007-05-03

申请号：US11262210

申请日：2005-10-31

申请人： Steven LeBoeuf ,  Alexei Vertiatchikh ,  Stanton Weaver ,  Radislav Potyrailo ,  Xian-An Cao

发明人： Steven LeBoeuf ,  Alexei Vertiatchikh ,  Stanton Weaver ,  Radislav Potyrailo ,  Xian-An Cao

IPC分类号： G01N21/00

CPC分类号： G01N21/6486 ,  G01N21/15 ,  G01N21/532 ,  G01N21/645

摘要： Embodiments of the invention include a particle detection system that includes a light emitting source, a non-collimating reflector, a collimating reflector, and a detector. Light from the light emitting source is directed by the non-collimating reflector to an area through which a particle stream may be transmitted. Fluorescent light from the light striking particles is redirected to the collimating reflector and then on to the detector. Other embodiments include a single pump used to pull a pair of fluid flows through the detection system. Other embodiments include a plurality of light emitting sources whose light is directed to a particle stream by a single reflector. Other embodiments include a method for detecting particles.

摘要翻译： 本发明的实施例包括一种粒子检测系统，其包括发光源，非准直反射器，准直反射器和检测器。 来自发光源的光由非准直反射器引导到可以传播颗粒物流的区域。 来自光撞击颗粒的荧光被重定向到准直反射器，然后被引导到检测器上。 其他实施例包括用于拉动一对流体流过检测系统的单个泵。 其他实施例包括多个发光源，其光通过单个反射器被引导到颗粒流。 其他实施方案包括用于检测颗粒的方法。

公开(公告)号：US20070096120A1

公开(公告)日：2007-05-03

申请号：US11260784

申请日：2005-10-27

申请人： Ivan Eliashevich ,  Hari Venugopalan ,  Emil Stefanov ,  Xian-An Cao ,  Bryan Shelton

发明人： Ivan Eliashevich ,  Hari Venugopalan ,  Emil Stefanov ,  Xian-An Cao ,  Bryan Shelton

IPC分类号： H01L31/12

CPC分类号： H01L33/20

摘要： An LED device (90) includes: an epitaxial structure (100) having a plurality of layers of semiconductor material and forming an active light-generating region (120) which generates light in response to electrical power being supplied to the LED device (90); and, a substrate (200) that is substantially transparent in a wavelength range corresponding to the light generated by the active light-generating region (120). The substrate has first and second opposing end faces (202, 206) and a plurality of side walls (210) extending therebetween, including a first side wall having a first portion thereof that defines a first surface (212, 214, 216, 218) which is not substantially normal to the first face (202) of the substrate (200). The epitaxial structure (100) is disposed on the first face (202) of the substrate (200).

摘要翻译： LED器件（90）包括：具有多层半导体材料的外延结构（100），并形成响应供给LED器件（90）的电力产生光的有源发光区域（120） ; 以及在与由所述有源发光区域（120）产生的光对应的波长范围内基本透明的基板（200）。 衬底具有第一和第二相对的端面（202,206）和在其之间延伸的多个侧壁（210），包括第一侧壁，其具有限定第一表面（212,214,216,218）的第一部分， 其基本上不垂直于衬底（200）的第一面（202）。 外延结构（100）设置在基板（200）的第一面（202）上。

公开(公告)号：US20070096239A1

公开(公告)日：2007-05-03

申请号：US11263163

申请日：2005-10-31

申请人： Xian-An Cao ,  Stephen Arthur

发明人： Xian-An Cao ,  Stephen Arthur

IPC分类号： H01L31/00

CPC分类号： H01L29/868 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/66196 ,  H01L29/66204 ,  H01L29/872

摘要： A semiconductor device includes a substrate comprising a material selected from the group consisting of AlN, SiC, GaN, sapphire and combinations thereof. An n+ type epitaxial layer is disposed above substrate and comprises GaN or AlGaN. An n− type epitaxial layer is disposed above substrate and comprises GaN or AlGaN. A p+-n junction grid comprising p+ GaN or p+ AlGaN is formed on selective areas of the n− type epitaxial layer. A metal layer is disposed over the p+-n junction grid and forms a Schottky contact. Another metal layer is deposited on one of the substrate and the n+ type epitaxial layer and forms a cathode electrode. A method of fabricating a semiconductor device is provided and includes forming a p+-n junction grid on a drift layer comprising GaN or AlGaN.

摘要翻译： 半导体器件包括包含选自由AlN，SiC，GaN，蓝宝石及其组合组成的组的材料的衬底。 n + +型外延层设置在衬底上方并包括GaN或AlGaN。 n型外延层设置在衬底上方并且包括GaN或AlGaN。 在n型外延层的选择性区域上形成包括p + +或/或+ AlGaN的p + 金属层设置在p + n + n连接栅格上方并形成肖特基接触。 另一金属层沉积在衬底和n +型外延层中的一个上并形成阴极电极。 提供了一种制造半导体器件的方法，包括在包括GaN或AlGaN的漂移层上形成p + + n结栅格。

公开(公告)号：US20120187368A1

公开(公告)日：2012-07-26

申请号：US13353464

申请日：2012-01-19

申请人： Xian-An Cao

发明人： Xian-An Cao

IPC分类号： H01L33/04 ,  H01L33/26 ,  B82Y99/00

CPC分类号： B82Y15/00 ,  G01L1/18

摘要： A sensing device is used to detect the spatial distributions of stresses applied by physical contact with the surface of the sensor or induced by pressure, temperature gradients, and surface absorption. The sensor comprises a hybrid active layer that includes luminophores doped in a polymeric or organic host, altogether embedded in a matrix. Under an electrical bias, the sensor simultaneously converts stresses into electrical and optical signals. Among many applications, the device may be used for tactile sensing and biometric imaging.

摘要翻译： 感测装置用于检测通过与传感器表面的物理接触或由压力，温度梯度和表面吸收引起的应力施加的应力的空间分布。 该传感器包括混合有源层，其包括掺杂在聚合物或有机主体中的发光体，共嵌入基质中。 在电偏压下，传感器同时将应力转换为电信号和光信号。 在许多应用中，该装置可以用于触觉感测和生物测定成像。