公开(公告)号：US07315439B2

公开(公告)日：2008-01-01

申请号：US10797241

申请日：2004-03-10

申请人： Mark Muenzer ,  Reinhold Bayerer ,  Peter Kanschat

发明人： Mark Muenzer ,  Reinhold Bayerer ,  Peter Kanschat

IPC分类号： H02H9/04

CPC分类号： H02M1/32 ,  H02H7/0838 ,  H02H9/047 ,  H02M1/088 ,  H03K17/0828

摘要： In order to limit an overvoltage at a parallel circuit of IGBT (3) and freewheeling diode (7), an undesirable current spike is used to switch on the intrinsically turned-off IGBT (3′) during the presence of the current spike precisely to an extent such that a current which counteracts the overvoltage arises in the IGBT/freewheeling diode pair. The oppositely acting current reduces the current gradient in leakage inductances (Lσ) and reduces the undesirable induced overvoltages.

摘要翻译： 为了限制IGBT（3）和续流二极管（7）的并联电路的过电压，在电流尖峰存在期间，使用不期望的电流尖峰来接通本质上关断的IGBT（3'），精确到 使得在IGBT /续流二极管对中产生抵抗过电压的电流的程度。 相反的电流降低了漏电感（L sigma）中的电流梯度，并减少了不期望的感应过电压。

公开(公告)号：US08344764B2

公开(公告)日：2013-01-01

申请号：US13359150

申请日：2012-01-26

申请人： Reinhold Bayerer ,  Peter Kanschat ,  Uwe Jansen

发明人： Reinhold Bayerer ,  Peter Kanschat ,  Uwe Jansen

IPC分类号： H03K3/00

CPC分类号： H03K17/0406

摘要： A circuit arrangement comprising a first semiconductor switching element, which has a load path and a drive terminal. A voltage supply circuit, is provided including an inductance connected in series with the load path of the first semiconductor switching element, and a capacitive charge storage arrangement, which is connected in parallel with the inductance and which has a first and a second output terminal for providing a supply voltage.

摘要翻译： 一种电路装置，包括具有负载路径和驱动端子的第一半导体开关元件。 提供一种电压供给电路，包括与第一半导体开关元件的负载路径串联连接的电感和与电感并联连接的电容性电荷存储装置，具有第一和第二输出端子， 提供电源电压。

公开(公告)号：US08120391B2

公开(公告)日：2012-02-21

申请号：US12571114

申请日：2009-09-30

申请人： Reinhold Bayerer ,  Peter Kanschat ,  Uwe Jansen

发明人： Reinhold Bayerer ,  Peter Kanschat ,  Uwe Jansen

IPC分类号： H03K3/00

CPC分类号： H03K17/0406

摘要： A circuit arrangement comprising a first semiconductor switching element, which has a load path and a drive terminal. A voltage supply circuit, is provided including an inductance connected in series with the load path of the first semiconductor switching element, and a capacitive charge storage arrangement, which is connected in parallel with the inductance and which has a first and a second output terminal for providing a supply voltage.

摘要翻译： 一种电路装置，包括具有负载路径和驱动端子的第一半导体开关元件。 提供一种电压供给电路，包括与第一半导体开关元件的负载路径串联连接的电感和与电感并联连接的电容性电荷存储装置，具有第一和第二输出端子， 提供电源电压。

公开(公告)号：US20100085105A1

公开(公告)日：2010-04-08

申请号：US12571114

申请日：2009-09-30

申请人： Reinhold Bayerer ,  Peter Kanschat ,  Uwe Jansen

发明人： Reinhold Bayerer ,  Peter Kanschat ,  Uwe Jansen

IPC分类号： H03K17/56

CPC分类号： H03K17/0406

摘要： A circuit arrangement comprising a first semiconductor switching element, which has a load path and a drive terminal. A voltage supply circuit, is provided including an inductance connected in series with the load path of the first semiconductor switching element, and a capacitive charge storage arrangement, which is connected in parallel with the inductance and which has a first and a second output terminal for providing a supply voltage.

摘要翻译： 一种电路装置，包括具有负载路径和驱动端子的第一半导体开关元件。 提供一种电压供给电路，包括与第一半导体开关元件的负载路径串联连接的电感和与电感并联连接的电容性电荷存储装置，具有第一和第二输出端子， 提供电源电压。

公开(公告)号：US20120119721A1

公开(公告)日：2012-05-17

申请号：US13359150

申请日：2012-01-26

申请人： Reinhold Bayerer ,  Peter Kanschat ,  Uwe Jansen

发明人： Reinhold Bayerer ,  Peter Kanschat ,  Uwe Jansen

IPC分类号： G05F1/10

CPC分类号： H03K17/0406

摘要： A circuit arrangement comprising a first semiconductor switching element, which has a load path and a drive terminal. A voltage supply circuit, is provided including an inductance connected in series with the load path of the first semiconductor switching element, and a capacitive charge storage arrangement, which is connected in parallel with the inductance and which has a first and a second output terminal for providing a supply voltage.

摘要翻译： 一种电路装置，包括具有负载路径和驱动端子的第一半导体开关元件。 提供一种电压供给电路，包括与第一半导体开关元件的负载路径串联连接的电感和与电感并联连接的电容性电荷存储装置，具有第一和第二输出端子， 提供电源电压。

公开(公告)号：US09688060B2

公开(公告)日：2017-06-27

申请号：US13571417

申请日：2012-08-10

申请人： Reinhold Bayerer ,  Olaf Hohlfeld

发明人： Reinhold Bayerer ,  Olaf Hohlfeld

IPC分类号： B23K37/04 ,  H01L21/58 ,  B29C65/02 ,  H01L21/30 ,  B32B37/10 ,  H01L21/50 ,  H01L25/07 ,  H01L25/00 ,  H01L21/56 ,  H01L23/373 ,  H01L23/00

CPC分类号： B32B37/10 ,  H01L21/50 ,  H01L21/566 ,  H01L23/3735 ,  H01L24/75 ,  H01L24/83 ,  H01L25/072 ,  H01L25/50 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/75102 ,  H01L2224/7511 ,  H01L2224/75265 ,  H01L2224/75317 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/83007 ,  H01L2224/83801 ,  H01L2224/83825 ,  H01L2224/8384 ,  H01L2224/8385 ,  H01L2924/01327 ,  H01L2924/15787 ,  H01L2924/00 ,  H01L2924/00014

摘要： A composite is produced by providing a first and a second joining partner, a connecting means, a sealing means, a reactor having a pressure chamber, and a heating element. The two joining partners and the connecting means are arranged in the pressure chamber such that the connecting means is situated between the first joining partner and the second joining partner. A gas-tight region is then produced, in which the connecting means is arranged. Afterward, a gas pressure of at least 20 bar is produced in the pressure chamber outside the gas-tight region. The gas pressure acts on the gas-tight region and presses the first joining partner, the second joining partner and the connecting means together. The joining partners and the connecting means are then heated by means of the heating element to a predefined maximum temperature of at least 210° C. and then cooled.

公开(公告)号：US09196562B2

公开(公告)日：2015-11-24

申请号：US13226981

申请日：2011-09-07

申请人： Dirk Siepe ,  Reinhold Bayerer

发明人： Dirk Siepe ,  Reinhold Bayerer

IPC分类号： H01L23/15 ,  H01L23/373 ,  H01L23/00 ,  H01L25/07

CPC分类号： H01L23/3735 ,  H01L24/03 ,  H01L24/05 ,  H01L24/32 ,  H01L24/33 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L24/83 ,  H01L24/85 ,  H01L25/072 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05171 ,  H01L2224/05172 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48491 ,  H01L2224/48747 ,  H01L2224/48766 ,  H01L2224/48847 ,  H01L2224/48866 ,  H01L2224/49 ,  H01L2224/73265 ,  H01L2224/78313 ,  H01L2224/82105 ,  H01L2224/82106 ,  H01L2224/83801 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2224/8501 ,  H01L2224/85205 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/0105 ,  H01L2924/0106 ,  H01L2924/01068 ,  H01L2924/0107 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/13055 ,  H01L2924/15787 ,  H01L2924/2076 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00015 ,  H01L2224/83205

摘要： A semiconductor arrangement includes a silicon body having a top surface and a bottom surface, and a thick metal layer arranged on the top surface of the silicon body. The thick metal layer has a bonding surface facing away from the top surface of the silicon body. A bonding wire or a ribbon is bonded to the thick metal layer at the bonding surface of the thick metal layer. The thickness of the thick metal layer is at least 10 micrometers (μm), the thick metal layer comprises copper or a copper alloy, and the bonding wire or ribbon comprises copper or a copper-based material.

摘要翻译： 半导体装置包括具有顶表面和底表面的硅体，以及布置在硅体顶表面上的厚金属层。 厚金属层具有背离硅体的顶表面的接合表面。 接合线或带在厚金属层的接合面接合到厚金属层。 厚金属层的厚度为至少10微米（μm），厚金属层包括铜或铜合金，并且接合线或带包括铜或铜基材料。

公开(公告)号：US08992267B2

公开(公告)日：2015-03-31

申请号：US12980115

申请日：2010-12-28

申请人： Reinhold Bayerer

发明人： Reinhold Bayerer

IPC分类号： H01R13/42 ,  H05K3/30 ,  H01R12/58

CPC分类号： H05K3/308 ,  H01L2924/0002 ,  H01R12/585 ,  H05K2201/10166 ,  H05K2201/10409 ,  H05K2201/1059 ,  H05K2201/10856 ,  Y10T29/49117 ,  H01L2924/00

摘要： A connecting system for electrically connecting electronic devices includes an electrically conductive first connector, an electrically conductive second connector and a clip element. The first connector is insertable in the second connector. The first connector or the second connector has a first opening into which the clip element can be inserted. In the inserted state, the clip element generates a contact pressure due to which the first connector and the second connector are pressed against one another so that an electrical contact between the first connector and the second connector is safeguarded.

摘要翻译： 用于电连接电子设备的连接系统包括导电的第一连接器，导电的第二连接器和夹子元件。 第一连接器可插入第二连接器。 第一连接器或第二连接器具有可插入夹子元件的第一开口。 在插入状态下，夹子元件产生接触压力，由此第一连接器和第二连接器彼此挤压，从而保护第一连接器和第二连接器之间的电接触。

公开(公告)号：US08787003B2

公开(公告)日：2014-07-22

申请号：US13271491

申请日：2011-10-12

申请人： Daniel Domes ,  Reinhold Bayerer

发明人： Daniel Domes ,  Reinhold Bayerer

IPC分类号： H01G4/228 ,  H01G4/008 ,  H01G4/06 ,  H01G2/08 ,  H01G9/00 ,  H05K5/02

CPC分类号： H05K7/1432 ,  H01G2/06 ,  H01G4/40 ,  H01L2224/48472

摘要： According to one embodiment of a capacitor module, the capacitor module includes a substrate having a metallization on a first side of the substrate, a plurality of connectors electrically coupled to the metallization and a plurality of capacitors disposed on the metallization. The plurality of capacitors includes a first set of capacitors electrically connected in parallel between a first set of the connectors and a second set of the connectors. The capacitor module further includes a housing enclosing the plurality of capacitors within the capacitor module.

摘要翻译： 根据电容器模块的一个实施例，电容器模块包括在衬底的第一侧上具有金属化的衬底，电耦合到金属化的多个连接器和设置在金属化上的多个电容器。 多个电容器包括并联电连接在第一组连接器和第二组连接器之间的第一组电容器。 电容器模块还包括封装电容器模块内的多个电容器的壳体。

公开(公告)号：US20130307156A1

公开(公告)日：2013-11-21

申请号：US13471898

申请日：2012-05-15

申请人： Reinhold Bayerer

发明人： Reinhold Bayerer

IPC分类号： H01L23/498 ,  H01L21/60

CPC分类号： H01L23/3735 ,  H01L23/49534 ,  H01L23/49811 ,  H01L23/49833 ,  H01L24/16 ,  H01L24/24 ,  H01L24/32 ,  H01L24/37 ,  H01L24/40 ,  H01L24/73 ,  H01L2224/16238 ,  H01L2224/24011 ,  H01L2224/24105 ,  H01L2224/24226 ,  H01L2224/32225 ,  H01L2224/32227 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40105 ,  H01L2224/40225 ,  H01L2224/40227 ,  H01L2224/45124 ,  H01L2224/48472 ,  H01L2224/73203 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01005 ,  H01L2924/01033

摘要： A power semiconductor module includes an electrically insulating substrate, copper metallization disposed on a first side of the substrate and patterned into a die attach region and a plurality of contact regions, and a semiconductor die attached to the die attach region. The die includes an active device region and one or more copper die metallization layers disposed above the active device region. The active device region is disposed closer to the copper metallization than the one or more copper die metallization layers. The copper die metallization layer spaced furthest from the active device region has a contact area extending over a majority of a side of the die facing away from the substrate. The module further includes a copper interconnect metallization connected to the contact area of the die via an aluminum-free area joint and to a first one of the contact regions of the copper metallization.

摘要翻译： 功率半导体模块包括电绝缘基板，设置在基板的第一侧上并被图案化成芯片附着区域和多个接触区域的铜金属化物，以及附着到管芯附着区域的半导体管芯。 芯片包括有源器件区域和设置在有源器件区域上方的一个或多个铜管芯金属化层。 有源器件区域比一个或多个铜管金属化层更靠近铜金属化。 离开有源器件区域最远的铜管金属化层具有在芯片的背离衬底的一侧的大部分上延伸的接触区域。 该模块还包括通过无铝区域接头和铜金属化接触区域中的第一个连接到管芯的接触区域的铜互连金属化。