公开(公告)号：US07407893B2

公开(公告)日：2008-08-05

申请号：US11065464

申请日：2005-02-24

申请人： Martin Jay Seamons ,  Wendy H. Yeh ,  Sudha S. R. Rathi ,  Deenesh Padhi ,  Andy (Hsin Chiao) Luan ,  Sum-Yee Betty Tang ,  Priya Kulkarni ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad ,  Yuxiang May Wang ,  Michael Chiu Kwan

发明人： Martin Jay Seamons ,  Wendy H. Yeh ,  Sudha S. R. Rathi ,  Deenesh Padhi ,  Andy (Hsin Chiao) Luan ,  Sum-Yee Betty Tang ,  Priya Kulkarni ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad ,  Yuxiang May Wang ,  Michael Chiu Kwan

IPC分类号： H01L21/31 ,  H01L21/461

CPC分类号： C23C16/505 ,  H01L21/3146 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/7681 ,  H01L21/76829

摘要： Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas into the processing chamber, wherein the processing gas comprises a carrier gas, hydrogen, and one or more precursor compounds, generating a plasma of the processing gas by applying power from a dual-frequency RF source, and depositing an amorphous carbon layer on the substrate.

摘要翻译： 提供了沉积无定形碳材料的方法。 一方面，本发明提供了一种处理衬底的方法，包括将衬底定位在处理室中，将处理气体引入处理室，其中处理气体包括载气，氢气和一种或多种前体化合物，产生 处理气体的等离子体，通过从双频RF源施加电力，以及在基板上沉积无定形碳层。

公开(公告)号：US20110104400A1

公开(公告)日：2011-05-05

申请号：US12987688

申请日：2011-01-10

申请人： Deenesh Padhi ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Witty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

发明人： Deenesh Padhi ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Witty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

IPC分类号： C23C26/00 ,  H05H1/24

CPC分类号： H01L21/02115 ,  C23C16/045 ,  C23C16/26 ,  C23C16/5096 ,  C23C16/56 ,  H01L21/02274 ,  H01L21/31144 ,  H01L21/3146

摘要： A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.

摘要翻译： 在基板上沉积无定形碳层的方法包括以下步骤：将基板定位在室中，将烃源引入处理室，将重稀有气体引入处理室，以及在处理室中产生等离子体。 重稀土气体选自氩，氪，氙及其组合，惰性气体的摩尔流量大于烃源的摩尔流量。 可以包括沉积终止步骤，其中停止烃源和惰性气体的流动，并且将等离子体保持在室中一段时间​​以从中除去颗粒。

公开(公告)号：US20080003824A1

公开(公告)日：2008-01-03

申请号：US11427324

申请日：2006-06-28

申请人： Deenesh Padhi ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Wtty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

发明人： Deenesh Padhi ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Wtty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

IPC分类号： H01L21/302

CPC分类号： H01L21/3146 ,  C23C16/045 ,  C23C16/26 ,  C23C16/5096 ,  C23C16/56 ,  H01L21/31144

摘要： A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.

摘要翻译： 在基板上沉积无定形碳层的方法包括以下步骤：将基板定位在室中，将烃源引入处理室，将重稀有气体引入处理室，以及在处理室中产生等离子体。 重稀土气体选自氩，氪，氙及其组合，惰性气体的摩尔流量大于烃源的摩尔流量。 可以包括沉积终止步骤，其中停止烃源和惰性气体的流动，并且将等离子体保持在室中一段时间​​以从中除去颗粒。

公开(公告)号：US20110090613A1

公开(公告)日：2011-04-21

申请号：US12950105

申请日：2010-11-19

申请人： Ganesh Balasubramanian ,  Amit Bansal ,  Eller Y. Juco ,  Mohamad Ayoub ,  Hyung-Joon Kim ,  Karthik Janakiraman ,  Sudha Rathi ,  Deenesh Padhi ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Amir Al-Bayati ,  Derek R. Witty ,  Hichem M'Saad ,  Anton Baryshnikov ,  Chiu Chan ,  Shuang Liu

发明人： Ganesh Balasubramanian ,  Amit Bansal ,  Eller Y. Juco ,  Mohamad Ayoub ,  Hyung-Joon Kim ,  Karthik Janakiraman ,  Sudha Rathi ,  Deenesh Padhi ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Amir Al-Bayati ,  Derek R. Witty ,  Hichem M'Saad ,  Anton Baryshnikov ,  Chiu Chan ,  Shuang Liu

IPC分类号： H01L21/683 ,  H01L21/66 ,  G01R27/02

CPC分类号： H01L21/6831 ,  C23C16/52 ,  H01J37/32431 ,  H01L21/67069 ,  H01L21/67253

摘要： The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.

摘要翻译： 本发明通常提供了用于监测和维持等离子体反应器中的基板的平坦度的方法和装置。 本发明的某些实施例提供了一种处理衬底的方法，包括将衬底定位在静电吸盘上，在静电吸盘中的电极与平行于静电吸盘的对置电极之间施加RF功率，将DC偏压施加到 静电卡盘中的电极将基板夹在静电卡盘上，并测量静电卡盘的虚拟阻抗。

公开(公告)号：US09337072B2

公开(公告)日：2016-05-10

申请号：US12950105

申请日：2010-11-19

申请人： Ganesh Balasubramanian ,  Amit Bansal ,  Eller Y. Juco ,  Mohamad Ayoub ,  Hyung-Joon Kim ,  Karthik Janakiraman ,  Sudha Rathi ,  Deenesh Padhi ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Amir Al-Bayati ,  Derek R. Witty ,  Hichem M'Saad ,  Anton Baryshnikov ,  Chiu Chan ,  Shuang Liu

发明人： Ganesh Balasubramanian ,  Amit Bansal ,  Eller Y. Juco ,  Mohamad Ayoub ,  Hyung-Joon Kim ,  Karthik Janakiraman ,  Sudha Rathi ,  Deenesh Padhi ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Amir Al-Bayati ,  Derek R. Witty ,  Hichem M'Saad ,  Anton Baryshnikov ,  Chiu Chan ,  Shuang Liu

IPC分类号： H02N13/00 ,  H01L21/683 ,  C23C16/52 ,  H01J37/32 ,  H01L21/67

CPC分类号： H01L21/6831 ,  C23C16/52 ,  H01J37/32431 ,  H01L21/67069 ,  H01L21/67253

摘要： The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.

摘要翻译： 本发明通常提供了用于监测和维持等离子体反应器中的基板的平坦度的方法和装置。 本发明的某些实施例提供了一种处理衬底的方法，包括将衬底定位在静电吸盘上，在静电吸盘中的电极与平行于静电吸盘的对置电极之间施加RF功率，将DC偏压施加到 静电卡盘中的电极将基板夹在静电卡盘上，并测量静电卡盘的假想阻抗。

公开(公告)号：US07867578B2

公开(公告)日：2011-01-11

申请号：US11427324

申请日：2006-06-28

申请人： Deenesh Padhi ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Witty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

发明人： Deenesh Padhi ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Witty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

IPC分类号： H05H1/24

CPC分类号： H01L21/3146 ,  C23C16/045 ,  C23C16/26 ,  C23C16/5096 ,  C23C16/56 ,  H01L21/31144

摘要： A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.

摘要翻译： 在基板上沉积无定形碳层的方法包括以下步骤：将基板定位在室中，将烃源引入处理室，将重稀有气体引入处理室，以及在处理室中产生等离子体。 重稀土气体选自氩，氪，氙及其组合，惰性气体的摩尔流量大于烃源的摩尔流量。 可以包括沉积终止步骤，其中停止烃源和惰性气体的流动，并且将等离子体保持在室中一段时间​​以从中除去颗粒。

公开(公告)号：US20120208373A1

公开(公告)日：2012-08-16

申请号：US13455984

申请日：2012-04-25

申请人： DEENESH PADHI ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Witty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

发明人： DEENESH PADHI ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Witty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

IPC分类号： H01L21/31

CPC分类号： H01L21/02115 ,  C23C16/045 ,  C23C16/26 ,  C23C16/5096 ,  C23C16/56 ,  H01L21/02274 ,  H01L21/31144 ,  H01L21/3146

摘要： A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.

摘要翻译： 在基板上沉积无定形碳层的方法包括以下步骤：将基板定位在室中，将烃源引入处理室，将重稀有气体引入处理室，以及在处理室中产生等离子体。 重稀土气体选自氩，氪，氙及其组合，惰性气体的摩尔流量大于烃源的摩尔流量。 可以包括沉积终止步骤，其中停止烃源和惰性气体的流动，并且将等离子体保持在室中一段时间​​以从中除去颗粒。

公开(公告)号：US20080153311A1

公开(公告)日：2008-06-26

申请号：US12042829

申请日：2008-03-05

申请人： Deenesh Padhi ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Witty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

发明人： Deenesh Padhi ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Witty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

IPC分类号： H01L21/31

CPC分类号： H01L21/02115 ,  C23C16/045 ,  C23C16/26 ,  C23C16/5096 ,  C23C16/56 ,  H01L21/02274 ,  H01L21/31144 ,  H01L21/3146

摘要： A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.

摘要翻译： 在基板上沉积无定形碳层的方法包括以下步骤：将基板定位在室中，将烃源引入处理室，将重稀有气体引入处理室，以及在处理室中产生等离子体。 重稀土气体选自氩，氪，氙及其组合，惰性气体的摩尔流量大于烃源的摩尔流量。 可以包括沉积终止步骤，其中停止烃源和惰性气体的流动，并且将等离子体保持在室中一段时间​​以从中除去颗粒。

公开(公告)号：US20090093128A1

公开(公告)日：2009-04-09

申请号：US11868859

申请日：2007-10-08

申请人： MARTIN JAY SEAMONS ,  Yoganand N. Saripalli ,  Kwangduk Douglas Lee ,  Bok Hoen Kim ,  Visweswaren Sivaramakrishnan ,  Wendy H. Yeh ,  Josephine Ju-Hwei Chang Liu ,  Amir Al-Bayati ,  Derek R. Witty ,  Hichem M'Saad

发明人： MARTIN JAY SEAMONS ,  Yoganand N. Saripalli ,  Kwangduk Douglas Lee ,  Bok Hoen Kim ,  Visweswaren Sivaramakrishnan ,  Wendy H. Yeh ,  Josephine Ju-Hwei Chang Liu ,  Amir Al-Bayati ,  Derek R. Witty ,  Hichem M'Saad

IPC分类号： H01L21/47

CPC分类号： H01L21/02115 ,  C23C16/26 ,  H01L21/02274 ,  H01L21/3146 ,  H01L21/76829

摘要： Methods for high temperature deposition an amorphous carbon film with improved step coverage are provided. In one embodiment, a method for of depositing an amorphous carbon film includes providing a substrate in a process chamber, heating the substrate at a temperature greater than 500 degrees Celsius, supplying a gas mixture comprising a hydrocarbon compound and an inert gas into the process chamber containing the heated substrate, and depositing an amorphous carbon film on the heated substrate having a stress of between 100 mega-pascal (MPa) tensile and about 100 mega-pascal (MPa) compressive.

摘要翻译： 提供了高温沉积方法，提供了具有改进的台阶覆盖率的无定形碳膜。 在一个实施方案中，沉积非晶碳膜的方法包括在处理室中提供衬底，在大于500摄氏度的温度下加热衬底，将包含烃化合物和惰性气体的气体混合物供应到处理室 包含加热的基底，以及在具有100兆帕（拉伸）拉伸和约100兆帕斯卡（MPa）压应力之间的应力的加热基底上沉积无定形碳膜。

公开(公告)号：US20080254233A1

公开(公告)日：2008-10-16

申请号：US11733531

申请日：2007-04-10

申请人： KWANGDUK DOUGLAS LEE ,  Matthew Spuller ,  Martin Jay Seamons ,  Wendy H. Yeh ,  Bok Hoen Kim ,  Mohamad Ayoub ,  Amir Al-Bayati ,  Derek R. Witty ,  Hichem M'Saad

发明人： KWANGDUK DOUGLAS LEE ,  Matthew Spuller ,  Martin Jay Seamons ,  Wendy H. Yeh ,  Bok Hoen Kim ,  Mohamad Ayoub ,  Amir Al-Bayati ,  Derek R. Witty ,  Hichem M'Saad

IPC分类号： C23C14/28

CPC分类号： C23C16/26 ,  C23C16/52

摘要： Methods of depositing amorphous carbon films on substrates are provided herein. The methods reduce or prevent plasma-induced charge damage to the substrates from the deposition of the amorphous carbon films. In one aspect, an initiation layer of amorphous carbon is deposited at a low RF power level and/or at a low hydrocarbon compound/inert gas flow rate ratio before a bulk layer of amorphous carbon is deposited. After the deposition of the initiation layer, the RF power, hydrocarbon flow rate, and inert gas flow rate may be ramped to final values for the deposition of the bulk layer, wherein the RF power ramp rate is typically greater than the ramp rates of the hydrocarbon compound and of the inert gas. In another aspect, a method of minimizing plasma-induced charge damage includes depositing a seasoning layer on one or more interior surfaces of a chamber before the deposition of the amorphous carbon film on a substrate therein or coating the interior surfaces with an oxide or dielectric layer during manufacturing.

摘要翻译： 本文提供了在基片上沉积非晶碳膜的方法。 该方法从无定形碳膜的沉积中减少或防止等离子体对基板的电荷损伤。 在一个方面，在堆积无定形碳沉积层之前，以低RF功率水平和/或低烃化合物/惰性气体流速比沉积无定形碳的起始层。 在起始层的沉积之后，RF功率，烃流速和惰性气体流速可以斜坡化到用于沉积体层的最终值，其中RF功率斜坡率通常大于 烃化合物和惰性气体。 在另一方面，一种使等离子体感应的电荷损伤最小化的方法包括在将非晶碳膜沉积在基底上之前，在腔室的一个或多个内表面上沉积调味层，或者用氧化物或介电层涂覆内表面 在制造过程中。