利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

53 条记录 (耗时 0.032 秒)

    Bifacial solar cells with overlaid back grid surface
    2.
    发明授权
    Bifacial solar cells with overlaid back grid surface 失效
    双面太阳能电池具有覆盖的背面网格表面

    公开(公告)号：US08298850B2

    公开(公告)日：2012-10-30

    申请号：US12456378

    申请日：2009-06-15

    申请人： Martin Kaes ,  Peter Borden ,  Kamel Ounadjela ,  Andreas Kraenzl ,  Alain Blosse ,  Fritz G. Kirscht

    发明人： Martin Kaes ,  Peter Borden ,  Kamel Ounadjela ,  Andreas Kraenzl ,  Alain Blosse ,  Fritz G. Kirscht

    IPC分类号： H01L21/00

    CPC分类号： H01L31/18 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/0684 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A simplified manufacturing process and the resultant bifacial solar cell (BSC) are provided, the simplified manufacturing process reducing manufacturing costs. The BSC includes an active region located on the front surface of the substrate, formed for example by a phosphorous diffusion step. After removing the PSG, assuming phosphorous diffusion, and isolating the front junction, dielectric layers are deposited on the front and back surfaces. Contact grids are formed, for example by screen printing. Prior to depositing the back surface dielectric, a metal grid may be applied to the back surface, the back surface contact grid registered to, and alloyed to, the metal grid during contact firing.

    摘要翻译： 提供了简化的制造工艺和所得的双面太阳能电池（BSC），简化的制造工艺降低了制造成本。 BSC包括位于基板的前表面上的有源区，例如通过磷扩散步骤形成。 在去除PSG之后，假设磷扩散并隔离前端，电介质层沉积在前表面和后表面上。 形成接触网格，例如通过丝网印刷。 在沉积后表面电介质之前，可以在接触点火期间将金属网格施加到后表面，后表面接触栅格，注册到金属栅格并与之合并。

    Bifacial solar cells with overlaid back grid surface
    5.
    发明申请
    Bifacial solar cells with overlaid back grid surface 失效
    双面太阳能电池具有覆盖的背面网格表面

    公开(公告)号：US20100275983A1

    公开(公告)日：2010-11-04

    申请号：US12456378

    申请日：2009-06-15

    申请人： Martin Kaes ,  Peter Borden ,  Kamel Ounadjela ,  Andreas Kraenzl ,  Alain Blosse ,  Fritz G. Kirscht

    发明人： Martin Kaes ,  Peter Borden ,  Kamel Ounadjela ,  Andreas Kraenzl ,  Alain Blosse ,  Fritz G. Kirscht

    IPC分类号： H01L31/0352 ,  H01L31/0232

    CPC分类号： H01L31/18 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/0684 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A simplified manufacturing process and the resultant bifacial solar cell (BSC) are provided, the simplified manufacturing process reducing manufacturing costs. The BSC includes an active region located on the front surface of the substrate, formed for example by a phosphorous diffusion step. After removing the PSG, assuming phosphorous diffusion, and isolating the front junction, dielectric layers are deposited on the front and back surfaces. Contact grids are formed, for example by screen printing. Prior to depositing the back surface dielectric, a metal grid may be applied to the back surface, the back surface contact grid registered to, and alloyed to, the metal grid during contact firing.

    摘要翻译： 提供了简化的制造工艺和所得的双面太阳能电池（BSC），简化的制造工艺降低了制造成本。 BSC包括位于基板的前表面上的有源区，例如通过磷扩散步骤形成。 在去除PSG之后，假设磷扩散并隔离前端，电介质层沉积在前表面和后表面上。 形成接触网格，例如通过丝网印刷。 在沉积后表面电介质之前，可以在接触点火期间将金属网格施加到后表面，后表面接触栅格，注册到金属栅格并与之合并。

    Passivation process for solar cell fabrication
    6.
    发明授权
    Passivation process for solar cell fabrication 失效
    太阳能电池制造的钝化过程

    公开(公告)号：US08168462B2

    公开(公告)日：2012-05-01

    申请号：US12479139

    申请日：2009-06-05

    申请人： Peter Borden ,  Michael P. Stewart ,  Li Xu ,  Hemant P. Mungekar ,  Christopher S. Olsen

    发明人： Peter Borden ,  Michael P. Stewart ,  Li Xu ,  Hemant P. Mungekar ,  Christopher S. Olsen

    IPC分类号： H01L21/00 ,  H01L31/0216

    CPC分类号： H01L31/1868 ,  H01L31/022425 ,  H01L31/072 ,  Y02E10/50 ,  Y02P70/521

    摘要： Embodiments of the invention contemplate the formation of a high efficiency solar cell using a novel plasma oxidation process to form a passivation film stack on a surface of a solar cell substrate. In one embodiment, the methods include providing a substrate having a first type of doping atom on a back surface of the substrate and a second type of doping atom on a front surface of the substrate, plasma oxidizing the back surface of the substrate to form an oxidation layer thereon, and forming a silicon nitride layer on the oxidation layer.

    摘要翻译： 本发明的实施例考虑使用新颖的等离子体氧化工艺形成高效太阳能电池，以在太阳能电池基板的表面上形成钝化膜堆叠。 在一个实施方案中，所述方法包括提供在衬底的背面上具有第一类型的掺杂原子的衬底和在衬底的前表面上的第二类型的掺杂原子，等离子体氧化衬底的背表面以形成 氧化层，并在氧化层上形成氮化硅层。

    DOUBLE ANNEAL PROCESS FOR AN IMPROVED RAPID THERMAL OXIDE PASSIVATED SOLAR CELL
    7.
    发明申请
    DOUBLE ANNEAL PROCESS FOR AN IMPROVED RAPID THERMAL OXIDE PASSIVATED SOLAR CELL 审中-公开
    改进的快速热氧化物钝化太阳能电池的双重方法

    公开(公告)号：US20100210060A1

    公开(公告)日：2010-08-19

    申请号：US12371090

    申请日：2009-02-13

    申请人： Peter Borden ,  Li Xu

    发明人： Peter Borden ,  Li Xu

    IPC分类号： H01L31/18

    CPC分类号： H01L31/1864 ,  Y02E10/50 ,  Y02P70/521

    摘要： Embodiments of the invention generally contemplate methods for treating a semiconductor solar cell substrate to reduce the number of undesirable material defects or interface state traps on the surface or within the substrate. These defects can adversely affect the efficiency of the solar cell because electron-hole pairs tend to recombine with the defects and are essentially lost without generating any useful electrical current. In one aspect, a method of forming a solar cell on a semiconductor substrate is provided, comprising doping a front surface of the substrate, applying a passivating layer to the front surface and/or a back surface of the substrate, and annealing the substrate to reduce the interface state trap density (Dit).

    摘要翻译： 本发明的实施方案通常考虑用于处理半导体太阳能电池基板以减少在表面上或在基板内的不期望的材料缺陷或界面状态陷阱的数量的方法。 这些缺陷可能不利地影响太阳能电池的效率，因为电子 - 空穴对倾向于与缺陷重新组合并且基本上损失而不产生任何有用的电流。 一方面，提供一种在半导体基板上形成太阳能电池的方法，包括：对所述基板的前表面进行掺杂，向所述基板的前表面和/或后表面施加钝化层，并将所述基板退火至 降低界面态陷阱密度（Dit）。

    Stacked thin film photovoltaic module and method for making same using IC processing
    8.
    发明申请
    Stacked thin film photovoltaic module and method for making same using IC processing 审中-公开
    叠层薄膜光伏模块及其制造方法采用IC加工

    公开(公告)号：US20070240759A1

    公开(公告)日：2007-10-18

    申请号：US11403560

    申请日：2006-04-13

    申请人： Peter Borden

    发明人： Peter Borden

    IPC分类号： H01L31/00

    CPC分类号： H01L31/18 ,  H01L31/02167 ,  H01L31/0322 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/047 ,  Y02E10/541

    摘要： In a thin-film photovoltaic (TF PV) module, stacked cells provide efficient conversion of solar energy without being afflicted by conventional problems such as current matching between layers. According to one aspect, the module includes separate terminals for the respective layers in the stack, thus allowing the current in each layer to be different without sacrificing efficiencies gained due to their different bandgaps. According to another aspect of the invention, a processing method according to the invention includes forming interconnects for each layer using etch and deposition processing, including forming separate interconnects for each respective layer, which interconnects can be coupled to respective sets of terminals.

    摘要翻译： 在薄膜光伏（TF PV）模块中，堆叠的电池提供太阳能的有效转换，而不受诸如层之间的电流匹配的常规问题的折磨。 根据一个方面，该模块包括用于堆叠中的相应层的单独的端子，从而允许每层中的电流不同，而不会牺牲由于其不同带隙而获得的效率。 根据本发明的另一方面，根据本发明的处理方法包括使用蚀刻和沉积处理为每个层形成互连，包括为每个相应层形成单独的互连，所述互连可以耦合到相应的终端集合。

    High throughput measurement of via defects in interconnects
    9.
    发明申请
    High throughput measurement of via defects in interconnects 有权
    互连中通孔缺陷的高通量测量

    公开(公告)号：US20050214956A1

    公开(公告)日：2005-09-29

    申请号：US10813407

    申请日：2004-03-29

    申请人： Jiping Li ,  Peter Borden ,  Edgar Genio

    发明人： Jiping Li ,  Peter Borden ,  Edgar Genio

    IPC分类号： G01N25/18 ,  G01N25/72 ,  H01L23/544 ,  H01L21/66

    CPC分类号： G01N25/18 ,  G01N25/72

    摘要： Heat is applied to a conductive structure that includes one or more vias, and the temperature at or near the point of heat application is measured. The measured temperature indicates the integrity or the defectiveness of various features (e.g. vias and/or traces) in the conductive structure, near the point of heat application. Specifically, a higher temperature measurement (as compared to a measurement in a reference structure) indicates a reduced heat transfer from the point of heat application, and therefore indicates a defect. The reference structure can be in the same die as the conductive structure (e.g. to provide a baseline) or outside the die but in the same wafer (e.g. in a test structure) or outside the wafer (e.g. in a reference wafer), depending on the embodiment.

    摘要翻译： 将热施加到包括一个或多个通孔的导电结构，并且测量在加热点处或附近的温度。 测量的温度表示导热结构中靠近加热点的各种特征（例如通路和/或迹线）的完整性或缺陷。 具体而言，较高的温度测量（与参考结构中的测量值相比）表示从热施加点减少的热传递，因此表示缺陷。 参考结构可以与导电结构（例如，提供基线）或模具外部在相同的晶片（例如，在测试结构中）或晶片外部（例如，在参考晶片中）处于相同的裸片中，这取决于 该实施例。