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1.发明授权Substrate-processing apparatus, substrate-processing method, substrate-processing program, and computer-readable recording medium recorded with such program 有权基板处理装置，基板处理方法，基板处理程序和记录有该程序的计算机可读记录介质公开(公告)号：US07867674B2
公开(公告)日：2011-01-11
申请号：US12065829
申请日：2006-09-13
申请人： Michio Tanaka , Shinichi Shinozuka , Masahide Tadokoro , Kunie Ogata , Hiroshi Tomita , Ryoichi Uemura
发明人： Michio Tanaka , Shinichi Shinozuka , Masahide Tadokoro , Kunie Ogata , Hiroshi Tomita , Ryoichi Uemura
摘要： A pattern forming system 1 includes a checking apparatus 400 and a control section 500. The checking apparatus 400 is configured to measure and check a sidewall angle SWA of a resist pattern formed on a substrate W after a developing process. The control section 500 is configured to use a difference between a target value of the sidewall angle SWA of the resist pattern after the developing process and a check result of the sidewall angle SWA obtained by the checking apparatus 400, to set a process condition for a first heat process 71 to 74 or a second heat process 84 to 89 so as to cause the sidewall angle SWA to approximate the target value thereof after the developing process.
摘要翻译： 图案形成系统1包括检查装置400和控制部500.检查装置400被配置为测量并检查在显影处理之后形成在基板W上的抗蚀剂图案的侧壁角度SWA。 控制部500构成为使用显影处理后的抗蚀剂图案的侧壁角度SWA的目标值与由检查装置400获得的侧壁角度SWA的检查结果之间的差，来设定处理条件 第一加热过程71至74或第二加热过程84至89，以便在显影过程之后使侧壁角度SWA接近其目标值。
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公开(公告)号：US08135487B2
公开(公告)日：2012-03-13
申请号：US12103276
申请日：2008-04-15
IPC分类号： G06F19/00 , H01L21/302 , H01L21/461
CPC分类号： H01L21/67248
摘要： A temperature setting method of the present invention includes the steps of: measuring states of an etching pattern within the substrate for a substrate for which a series of photolithography processing including thermal processing and an etching treatment thereafter have been finished; calculating temperature correction values for regions of a thermal processing plate from measurement result of the states of the etching pattern within the substrate using a function between correction amounts for the states of the etching pattern and the temperature correction values for the thermal processing plate; and setting the temperature for each of the regions of the thermal processing plate by each of the calculated temperature correction values.
摘要翻译： 本发明的温度设定方法包括以下步骤：测量用于其后完成了包括热处理和蚀刻处理的一系列光刻处理的基板的蚀刻图案的状态; 使用蚀刻图案的状态的校正量和热处理板的温度校正值之间的函数，从衬底内的蚀刻图案的状态的测量结果计算热处理板的区域的温度校正值; 并且通过计算的每个温度校正值来设定热处理板的每个区域的温度。
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3.发明授权公开(公告)号：US07957828B2
公开(公告)日：2011-06-07
申请号：US12099970
申请日：2008-04-09
IPC分类号： G06F19/00
CPC分类号： H01L21/67248 , G03F7/70483
摘要： In the present invention, the line widths within a substrate of an etching pattern are measured for a substrate for which photolithography processing and an etching treatment thereafter have been finished. The line width measurement results are converted into the line widths of a resist pattern using relational expressions which have been obtained in advance. From the converted line widths of the resist pattern, coefficients of a polynomial function indicating variations within the substrate are calculated. Next, a function between line width correction amounts for the resist pattern and temperature correction values is used to calculate temperature correction values for the regions of the thermal plate to bring the coefficients of the polynomial function close to zero. Based on each of the calculated temperature correction values, the temperature for each of the regions is set.
摘要翻译： 在本发明中，对于其后的光刻处理和蚀刻处理结束的基板测量蚀刻图案的基板内的线宽。 使用预先获得的关系式将线宽测量结果转换成抗蚀剂图案的线宽。 根据抗蚀剂图案的转换线宽，计算表示衬底内的变化的多项式函数的系数。 接下来，使用抗蚀剂图案的线宽校正量和温度校正值之间的函数来计算热板的区域的温度校正值，以使多项式函数的系数接近零。 基于每个计算的温度校正值，设定每个区域的温度。
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4.发明授权Substrate processing method, computer-readable storage medium and substrate processing system 有权基板处理方法，计算机可读存储介质和基板处理系统公开(公告)号：US07985516B2
公开(公告)日：2011-07-26
申请号：US12426600
申请日：2009-04-20
CPC分类号： G03F7/38 , H01L21/67225 , H01L21/67248
摘要： A processing temperature of thermal processing is corrected based on measurement of a first dimension of a resist pattern on a substrate from a previously obtained relation between a dimension of a resist pattern and a temperature of thermal processing, a second dimension of the resist pattern after thermal processing is performed at the corrected processing temperature is measured, a distribution within the substrate of the second dimension is classified into a linear component expressed by an approximated curved surface and a nonlinear component, a processing condition of exposure processing is corrected based on the linear component from a previously obtained relation between a dimension of a resist pattern and a processing condition of exposure processing, and thermal processing at the processing temperature corrected in a temperature correcting step and exposure processing under the processing condition corrected in an exposure condition correcting step are performed to form a predetermined pattern.
摘要翻译： 基于先前获得的抗蚀剂图案的尺寸和热处理温度之间的关系，基于热处理后的抗蚀剂图案的第二维度，基于基板上的抗蚀剂图案的第一尺寸的测量来校正热处理的处理温度 在校正后的处理温度下进行处理，将第二维度的基板内的分布分类成由近似曲面和非线性成分表示的线性分量，根据线性分量来校正曝光处理的处理条件 从先前获得的抗蚀剂图案的尺寸和曝光处理的处理条件之间的关系以及在温度校正步骤中校正的处理温度下的热处理和在曝光条件校正步骤中校正的处理条件下的曝光处理进行到 形成一个预先 确定模式。
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5.发明授权Substrate processing method, computer-readable storage medium, and substrate processing system 有权基板处理方法，计算机可读存储介质和基板处理系统公开(公告)号：US07968260B2
公开(公告)日：2011-06-28
申请号：US12369198
申请日：2009-02-11
申请人： Masahide Tadokoro , Kunie Ogata
发明人： Masahide Tadokoro , Kunie Ogata
CPC分类号： H01L21/32139 , G03F7/705 , G03F7/70525 , G03F7/70616 , G03F7/70625 , G03F7/7075 , G03F7/70991 , H01L21/67109 , H01L21/67178 , H01L21/67253 , H01L21/67288 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： The present invention has: a first step of measuring, as an initial condition of a substrate, any of a film thickness of a processing film on the substrate, a refractive index of the processing film, an absorption coefficient of the processing film, and a warpage amount of the substrate; a second step of estimating a dimension of a pattern of the processing film after predetermined processing from a previously obtained first relation between the initial condition and the dimension of the pattern of the processing film based on a measurement result of the initial condition; a third step of obtaining a correction value for a processing condition of the predetermined processing from a previously obtained second relation between the processing condition of the predetermined processing and the dimension of the pattern of the processing film based on an estimation result of the dimension of the pattern; a fourth step of correcting the processing condition of the predetermined processing based on the correction value; and a fifth step of performing predetermined processing on the substrate under the corrected processing condition to form the predetermined pattern in the processing film on the substrate.
摘要翻译： 本发明具有：第一步骤，作为基板的初始状态，测量基板上的处理膜的膜厚，处理膜的折射率，处理膜的吸收系数和 基板的翘曲量; 第二步骤，基于初始条件的测量结果，从先前获得的处理膜的图案的初始状态和尺寸之间的第一关系估计处理膜的图案的尺寸; 第三步骤，基于预定处理的处理条件和处理膜的图案的尺寸之间的先前获得的第二关系，基于预定处理的尺寸的估计结果，获得预定处理的处理条件的校正值 模式; 第四步骤，基于校正值来校正预定处理的处理条件; 以及在校正后的处理条件下对基板进行规定处理以在基板上的处理膜中形成规定图案的第五工序。
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6.发明申请SUBSTRATE-PROCESSING APPARATUS, SUBSTRATE-PROCESSING METHOD, SUBSTRATE-PROCESSING PROGRAM, AND COMPUTER-READABLE RECORDING MEDIUM RECORDED WITH SUCH PROGRAM 有权基板处理设备，基板处理方法，基板处理程序以及使用此程序记录的计算机可读记录介质公开(公告)号：US20090104548A1
公开(公告)日：2009-04-23
申请号：US12065829
申请日：2006-09-13
申请人： Michio Tanaka , Shinichi Shinozuka , Masahide Tadokoro , Kunie Ogata , Hiroshi Tomita , Ryoichi Uemura
发明人： Michio Tanaka , Shinichi Shinozuka , Masahide Tadokoro , Kunie Ogata , Hiroshi Tomita , Ryoichi Uemura
摘要： A pattern forming system 1 includes a checking apparatus 400 and a control section 500. The checking apparatus 400 is configured to measure and check a sidewall angle SWA of a resist pattern formed on a substrate W after a developing process. The control section 500 is configured to use a difference between a target value of the sidewall angle SWA of the resist pattern after the developing process and a check result of the sidewall angle SWA obtained by the checking apparatus 400, to set a process condition for a first heat process 71 to 74 or a second heat process 84 to 89 so as to cause the sidewall angle SWA to approximate the target value thereof after the developing process.
摘要翻译： 图案形成系统1包括检查装置400和控制部500.检查装置400被配置为测量并检查在显影处理之后形成在基板W上的抗蚀剂图案的侧壁角度SWA。 控制部500构成为使用显影处理后的抗蚀剂图案的侧壁角度SWA的目标值与由检查装置400获得的侧壁角度SWA的检查结果之间的差，来设定处理条件 第一加热过程71至74或第二加热过程84至89，以便在显影过程之后使侧壁角度SWA接近其目标值。
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7.发明授权Substrate processing method, computer-readable storage medium and substrate processing system 有权基板处理方法，计算机可读存储介质和基板处理系统公开(公告)号：US08253077B2
公开(公告)日：2012-08-28
申请号：US13159055
申请日：2011-06-13
IPC分类号： H05B3/68
CPC分类号： G03F7/38 , H01L21/67225 , H01L21/67248
摘要： A processing temperature of thermal processing is corrected based on measurement of a first dimension of a resist pattern on a substrate from a previously obtained relation between a dimension of a resist pattern and a temperature of thermal processing, a second dimension of the resist pattern after thermal processing is performed at the corrected processing temperature is measured, a distribution within the substrate of the second dimension is classified into a linear component expressed by an approximated curved surface and a nonlinear component, a processing condition of exposure processing is corrected based on the linear component from a previously obtained relation between a dimension of a resist pattern and a processing condition of exposure processing, and thermal processing at the processing temperature corrected in a temperature correcting step and exposure processing under the processing condition corrected in an exposure condition correcting step are performed to form a predetermined pattern.
摘要翻译： 基于先前获得的抗蚀剂图案的尺寸和热处理温度之间的关系，基于热处理后的抗蚀剂图案的第二维度，基于基板上的抗蚀剂图案的第一尺寸的测量来校正热处理的处理温度 在校正后的处理温度下进行处理，将第二维度的基板内的分布分类成由近似曲面和非线性成分表示的线性分量，根据线性分量来校正曝光处理的处理条件 从先前获得的抗蚀剂图案的尺寸和曝光处理的处理条件之间的关系以及在温度校正步骤中校正的处理温度下的热处理和在曝光条件校正步骤中校正的处理条件下的曝光处理进行到 形成一个预先 确定模式。
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8.发明申请SUBSTRATE PROCESSING METHOD, COMPUTER-READABLE STORAGE MEDIUM AND SUBSTRATE PROCESSING SYSTEM 有权基板处理方法，计算机可读存储介质和基板处理系统公开(公告)号：US20110242513A1
公开(公告)日：2011-10-06
申请号：US13159055
申请日：2011-06-13
IPC分类号： G03B27/42
CPC分类号： G03F7/38 , H01L21/67225 , H01L21/67248
摘要： A processing temperature of thermal processing is corrected based on measurement of a first dimension of a resist pattern on a substrate from a previously obtained relation between a dimension of a resist pattern and a temperature of thermal processing, a second dimension of the resist pattern after thermal processing is performed at the corrected processing temperature is measured, a distribution within the substrate of the second dimension is classified into a linear component expressed by an approximated curved surface and a nonlinear component, a processing condition of exposure processing is corrected based on the linear component from a previously obtained relation between a dimension of a resist pattern and a processing condition of exposure processing, and thermal processing at the processing temperature corrected in a temperature correcting step and exposure processing under the processing condition corrected in an exposure condition correcting step are performed to form a predetermined pattern.
摘要翻译： 基于先前获得的抗蚀剂图案的尺寸和热处理温度之间的关系，基于热处理后的抗蚀剂图案的第二维度，基于基板上的抗蚀剂图案的第一尺寸的测量来校正热处理的处理温度 在校正后的处理温度下进行处理，将第二维度的基板内的分布分类成由近似曲面和非线性成分表示的线性分量，根据线性分量来校正曝光处理的处理条件 从先前获得的抗蚀剂图案的尺寸和曝光处理的处理条件之间的关系以及在温度校正步骤中校正的处理温度下的热处理和在曝光条件校正步骤中校正的处理条件下的曝光处理进行到 形成一个预先 确定模式。
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9.发明授权Substrate processing method, computer-readable storage medium, and substrate processing system 有权基板处理方法，计算机可读存储介质和基板处理系统公开(公告)号：US08308381B2
公开(公告)日：2012-11-13
申请号：US13103708
申请日：2011-05-09
申请人： Masahide Tadokoro , Kunie Ogata
发明人： Masahide Tadokoro , Kunie Ogata
CPC分类号： H01L21/32139 , G03F7/705 , G03F7/70525 , G03F7/70616 , G03F7/70625 , G03F7/7075 , G03F7/70991 , H01L21/67109 , H01L21/67178 , H01L21/67253 , H01L21/67288 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： The substrate processing system includes a measuring apparatus that measures any of film thickness, a refractive index, an absorption coefficient, and warpage. The system includes an apparatus for performing photolithography on the substrate to form a resist pattern and an etching apparatus that etches a processing film. A control unit includes a first relation between an initial condition and a dimension of the pattern of the processing film and a second relation between a processing condition of the predetermined processing and the dimension of the pattern of the processing film. The control unit estimates a dimension of the pattern of the processing film after the etching treatment from the first relation based on a measurement result and corrects the processing condition of the predetermined processing in the photolithography or the etching from the second relation based on an estimation result of the dimension of the pattern.
摘要翻译： 基板处理系统包括测量膜厚，折射率，吸收系数和翘曲中的任何一个的测量装置。 该系统包括用于在基板上进行光刻以形成抗蚀剂图案的装置和蚀刻处理膜的蚀刻装置。 控制单元包括处理膜的图案的初始状态和尺寸之间的第一关系以及预定处理的处理条件和处理膜的图案的尺寸之间的第二关系。 控制单元基于测量结果从第一关系估计蚀刻处理后的处理膜的图案的尺寸，并根据估计结果校正光刻中的预定处理或第二关系的蚀刻的处理条件 的图案尺寸。
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10.发明申请公开(公告)号：US20080257496A1
公开(公告)日：2008-10-23
申请号：US12103276
申请日：2008-04-15
CPC分类号： H01L21/67248
摘要： A temperature setting method of the present invention includes the steps of: measuring states of an etching pattern within the substrate for a substrate for which a series of photolithography processing including thermal processing and an etching treatment thereafter have been finished; calculating temperature correction values for regions of a thermal processing plate from measurement result of the states of the etching pattern within the substrate using a function between correction amounts for the states of the etching pattern and the temperature correction values for the thermal processing plate; and setting the temperature for each of the regions of the thermal processing plate by each of the calculated temperature correction values.
摘要翻译： 本发明的温度设定方法包括以下步骤：测量用于其后完成了包括热处理和蚀刻处理的一系列光刻处理的基板的蚀刻图案的状态; 使用蚀刻图案的状态的校正量和热处理板的温度校正值之间的函数，从衬底内的蚀刻图案的状态的测量结果计算热处理板的区域的温度校正值; 并且通过计算的每个温度校正值来设定热处理板的每个区域的温度。
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