公开(公告)号：US06580126B1

公开(公告)日：2003-06-17

申请号：US09709582

申请日：2000-11-13

申请人： Masahiko Suzumura ,  Hitomichi Takano ,  Yuji Suzuki ,  Takashi Kishida ,  Yoshiki Hayasaki ,  Yoshifumi Shirai ,  Takeshi Yoshida ,  Yasunori Miyamoto

发明人： Masahiko Suzumura ,  Hitomichi Takano ,  Yuji Suzuki ,  Takashi Kishida ,  Yoshiki Hayasaki ,  Yoshifumi Shirai ,  Takeshi Yoshida ,  Yasunori Miyamoto

IPC分类号： H01L2976

CPC分类号： H01L29/7824 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L27/088 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0696 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48237 ,  H01L2224/48257 ,  H01L2224/49 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2224/45099

摘要： A solid state relay composed of a series connected pair of LDMOSFETs has a minimized output capacitance. Each LDMOSFET is configured to have a silicon layer of a first conductive type, a drain region of the first conductive type diffused in the top surface of the silicon layer, a well region of a second conductive type diffused in the silicon layer in a laterally spaced relation from the drain region, and a source region of the first conductive type diffused within the well region to define a channel extending between the source region and a confronting edge of the well region along the top surface of the silicon layer. Each LDMOSFET is of an SOI (Silicon-On-Insulator) structure composed of a silicon substrate placed on a supporting plate, a buried oxide layer on the silicon substrate, and the silicon layer on the buried oxide layer. The well region is diffused over the full depth of the silicon layer to have its bottom in contact with the buried oxide layer, so that the well region forms with the silicon layer a P-N interface only at a small area adjacent the channel. Because of this reduced P-N interface and also because of the buried oxide layer exhibiting a much lower inductive capacitance than the silicon layer, it is possible to greatly reduce a drain-source capacitance for minimizing the output capacitance of the relay in the non-conductive condition.

公开(公告)号：US06373101B1

公开(公告)日：2002-04-16

申请号：US09709528

申请日：2000-11-13

申请人： Masahiko Suzumura ,  Hitomichi Takano ,  Yuji Suzuki ,  Takashi Kishida ,  Yoshiki Hayasaki ,  Yoshifumi Shirai ,  Takeshi Yoshida ,  Yasunori Miyamoto

发明人： Masahiko Suzumura ,  Hitomichi Takano ,  Yuji Suzuki ,  Takashi Kishida ,  Yoshiki Hayasaki ,  Yoshifumi Shirai ,  Takeshi Yoshida ,  Yasunori Miyamoto

IPC分类号： H01L2976

CPC分类号： H01L29/7824 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L27/088 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0696 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48237 ,  H01L2224/48257 ,  H01L2224/49 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2224/45099

摘要： A solid state relay composed of a series connected pair of LDMOSFETs has a minimized output capacitance. Each LDMOSFET is configured to have a silicon layer of a first conductive type, a drain region of the first conductive type diffused in the top surface of the silicon layer, a well region of a second conductive type diffused in the silicon layer in a laterally spaced relation from the drain region, and a source region of the first conductive type diffused within the well region to define a channel extending between the source region and a confronting edge of the well region along the top surface of the silicon layer. Each LDMOSFET is of an SOI (Silicon-On-Insulator) structure composed of a silicon substrate placed on a supporting plate, a buried oxide layer on the silicon substrate, and the silicon layer on the buried oxide layer. The well region is diffused over the full depth of the silicon layer to have its bottom in contact with the buried oxide layer, so that the well region forms with the silicon layer a P-N interface only at a small area adjacent the channel. Because of this reduced P-N interface and also because of the buried oxide layer exhibiting a much lower inductive capacitance than the silicon layer, it is possible to greatly reduce a drain-source capacitance for minimizing the output capacitance of the relay in the non-conductive condition.

摘要翻译： 由串联连接的LDMOSFET组成的固态继电器具有最小的输出电容。 每个LDMOSFET被配置为具有第一导电类型的硅层，第一导电类型的漏极区域扩散在硅层的顶表面中，第二导电类型的阱区域在硅层中以横向间隔开地扩散 与漏区域的关系以及在阱区域内扩散的第一导电类型的源极区域，以限定沿着硅层的顶表面在源极区域和阱区域的相对边缘之间延伸的沟道。 每个LDMOSFET是由放置在支撑板上的硅衬底，硅衬底上的掩埋氧化物层和掩埋氧化物层上的硅层组成的SOI（绝缘体上硅）结构。 阱区域在硅层的整个深度上扩散以使其底部与掩埋氧化物层接触，使得阱区域仅在邻近通道的小区域处与硅层形成P-N界面。 由于这种减小的PN接口，并且由于掩埋氧化物层具有比硅层更低的电感性电容，因此可以大大减小漏 - 源电容，以使在非导电条件下继电器的输出电容最小化 。

公开(公告)号：US06211551B1

公开(公告)日：2001-04-03

申请号：US09105464

申请日：1998-06-26

申请人： Masahiko Suzumura ,  Hitomichi Takano ,  Yuji Suzuki ,  Takashi Kishida ,  Yoshiki Hayasaki ,  Yoshifumi Shirai ,  Takeshi Yoshida ,  Yasunori Miyamoto

发明人： Masahiko Suzumura ,  Hitomichi Takano ,  Yuji Suzuki ,  Takashi Kishida ,  Yoshiki Hayasaki ,  Yoshifumi Shirai ,  Takeshi Yoshida ,  Yasunori Miyamoto

IPC分类号： H01L2976

CPC分类号： H01L29/7824 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L27/088 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0696 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48237 ,  H01L2224/48257 ,  H01L2224/49 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2224/45099

摘要： A solid state relay composed of a series connected pair of LDMOSFETs has a minimized output capacitance. Each LDMOSFET is configured to have a silicon layer of a first conductive type, a drain region of the first conductive type diffused in the top surface of the silicon layer, a well region of a second conductive type diffused in the silicon layer in a laterally spaced relation from the drain region, and a source region of the first conductive type diffused within the well region to define a channel extending between the source region and a confronting edge of the well region along the top surface of the silicon layer. Each LDMOSFET is of an SOI (Silicon-On-Insulator) structure composed of a silicon substrate placed on a supporting plate, a buried oxide layer on the silicon substrate, and the silicon layer on the buried oxide layer. The well region is diffused over the full depth of the silicon layer to have its bottom in contact with the buried oxide layer, so that the well region forms with the silicon layer a P-N interface only at a small area adjacent the channel. Because of this reduced P-N interface and also because of the buried oxide layer exhibiting a much lower inductive capacitance than the silicon layer, it is possible to greatly reduce a drain-source capacitance for minimizing the output capacitance of the relay in the non-conductive condition.

摘要翻译： 由串联连接的LDMOSFET组成的固态继电器具有最小的输出电容。 每个LDMOSFET被配置为具有第一导电类型的硅层，第一导电类型的漏极区域扩散在硅层的顶表面中，第二导电类型的阱区域在硅层中以横向间隔开地扩散 与漏区域的关系以及在阱区域内扩散的第一导电类型的源极区域，以限定沿着硅层的顶表面在源极区域和阱区域的相对边缘之间延伸的沟道。 每个LDMOSFET是由放置在支撑板上的硅衬底，硅衬底上的掩埋氧化物层和掩埋氧化物层上的硅层组成的SOI（绝缘体上硅）结构。 阱区域在硅层的整个深度上扩散以使其底部与掩埋氧化物层接触，使得阱区域仅在邻近通道的小区域处与硅层形成P-N界面。 由于这种减小的PN接口，并且由于掩埋氧化物层具有比硅层更低的电感性电容，因此可以大大减小漏 - 源电容，以使在非导电条件下继电器的输出电容最小化 。

公开(公告)号：US06448620B2

公开(公告)日：2002-09-10

申请号：US09741812

申请日：2000-12-22

申请人： Yoshiki Hayasaki ,  Hitomichi Takano ,  Masahiko Suzumura ,  Yuji Suzuki ,  Yoshifumi Shirai ,  Takashi Kishida ,  Takeshi Yoshida ,  Takaaki Yoshihara

发明人： Yoshiki Hayasaki ,  Hitomichi Takano ,  Masahiko Suzumura ,  Yuji Suzuki ,  Yoshifumi Shirai ,  Takashi Kishida ,  Takeshi Yoshida ,  Takaaki Yoshihara

IPC分类号： H01L2701

CPC分类号： H01L29/7824 ,  H01L29/0878 ,  H01L29/66681 ,  H01L29/78624

摘要： To provide a semiconductor device having a large allowable current, a demanded withstand voltage, and small output capacitance and resistance, the semiconductor device comprises a semiconductor layer formed on a semiconductor substrate, and the semiconductor layer includes a first conductivity type-drain region, a second conductivity type-well region apart from the drain region, a first conductivity type-source region in the well region apart from one end of the well region on the side of the drain region, a first conductivity type-drift region formed between one end of the well region and the drain region and in contact with the well region and the drain region, respectively, and a gate electrode formed spaced a gate oxide layer and on the well region located between the drift region and the source region; and the impurity concentration of the drift region decreases in the lateral direction and also in the vertical direction, respectively, as the distance from the drain region increases.

摘要翻译： 为了提供具有大容许电流，所要求的耐受电压和小的输出电容和电阻的半导体器件，半导体器件包括形成在半导体衬底上的半导体层，并且半导体层包括第一导电类型 - 漏极区域， 与漏极区分离的第二导电类型 - 阱区，在与漏极区一侧的阱区的一端分开的阱区中的第一导电型 - 源极区，形成在漏极区的一端 和与阱区和漏极区分别接触的阱区和形成在栅极氧化物层之间以及位于漂移区和源极区之间的阱区上的栅极; 随着距离漏极区域的距离增加，漂移区域的杂质浓度分别在横向和垂直方向上减小。

公开(公告)号：US5780900A

公开(公告)日：1998-07-14

申请号：US733164

申请日：1996-10-17

申请人： Yuji Suzuki ,  Hitomichi Takano ,  Masahiko Suzumura ,  Yoshiki Hayasaki ,  Takashi Kishida ,  Yoshifumi Shirai

发明人： Yuji Suzuki ,  Hitomichi Takano ,  Masahiko Suzumura ,  Yoshiki Hayasaki ,  Takashi Kishida ,  Yoshifumi Shirai

IPC分类号： H01L29/06 ,  H01L29/08 ,  H01L29/78 ,  H01L29/786 ,  H01L29/10

CPC分类号： H01L29/7824 ,  H01L29/0873 ,  H01L29/78624 ,  H01L29/0657 ,  H01L29/0878 ,  H01L29/402

摘要： A thin film transistor of SOI (Silicon-On-Insulator) type includes a buried oxide layer formed on a semiconductor substrate, a silicon layer of a first conductive type formed on the buried oxide layer, and an upper oxide layer formed on the silicon layer. The silicon layer has a body region of a second conductive type, source region of the first conductive type, drain region of the first conductive type, and a drift region of the first conductive type. The silicon layer is formed with a first portion of a thickness T1 in which the doping region is formed, and a second portion of a thickness T2 in which the body region is formed to reach the buried oxide layer. When the thicknesses T1 and T2 are determined so as to satisfy the relationships: 0.4 .mu.m

摘要翻译： SOI（绝缘体上硅）型薄膜晶体管包括在半导体衬底上形成的掩埋氧化物层，形成在掩埋氧化物层上的第一导电类型的硅层和形成在硅层上的上部氧化物层 。 硅层具有第二导电类型的主体区域，第一导电类型的源极区域，第一导电类型的漏极区域和第一导电类型的漂移区域。 硅层形成有其中形成有掺杂区域的厚度T1的第一部分和形成有体区以到达掩埋氧化物层的厚度T2的第二部分。 当厚度T1和T2被确定为满足以下关系：0.4μm

公开(公告)号：US20130320841A1

公开(公告)日：2013-12-05

申请号：US14000531

申请日：2012-02-10

申请人： Takeo Shirai ,  Yoshiharu Nakamura ,  Hitomichi Takano

发明人： Takeo Shirai ,  Yoshiharu Nakamura ,  Hitomichi Takano

IPC分类号： H05B33/06

CPC分类号： H05B33/06 ,  H01L51/5212 ,  H01L2251/5361 ,  H05B33/10 ,  H05B33/26

摘要： The organic electroluminescent device includes: a first electrode of conductive and light transmissive material; a light emitting layer of organic material on the first electrode; a second electrode of conductive material on the layer; first and second terminal parts placed on first and second ends of the layer in a first direction crossing a thickness direction of the layer and coupled to the first and second electrodes, respectively; and an auxiliary electrode which is on the first electrode and beside the layer in a second direction crossing the thickness direction and the first direction and coupled to the first electrode, and has an elongated shape extending in the first direction, and made of material having specific resistance smaller than the first electrode, and includes portions with different thicknesses such that sheet resistance is increased with an increase in distance from the first terminal part in a lengthwise direction thereof.

摘要翻译： 有机电致发光器件包括：导电和透光材料的第一电极; 在所述第一电极上的有机材料的发光层; 该层上的导电材料的第二电极; 第一和第二端子部分沿着与层的厚度方向交叉的第一方向分别放置在层的第一和第二端上并分别耦合到第一和第二电极; 以及辅助电极，其在所述第一电极上并且在所述层的旁边沿与所述厚度方向和所述第一方向交叉的第二方向并且耦合到所述第一电极，并且具有沿所述第一方向延伸的细长形状，并且由具有特定 电阻小于第一电极，并且包括具有不同厚度的部分，使得薄层电阻随着其长度方向与第一端子部分的距离的增加而增加。

公开(公告)号：US07973924B2

公开(公告)日：2011-07-05

申请号：US10593646

申请日：2005-03-23

申请人： Susumu Noda ,  Takashi Asano ,  Hitomichi Takano

发明人： Susumu Noda ,  Takashi Asano ,  Hitomichi Takano

IPC分类号： G01J3/00

CPC分类号： G02B6/1225 ,  B82Y20/00 ,  G01N21/3504 ,  G01N21/774 ,  G01N21/7746 ,  G01N2021/7776

摘要： A highly sensitive and compactable target substance sensor for detection of the target substance using a photonic crystal and a method thereof. The sensor includes an electromagnetic wave source of supplying an electromagnetic wave, a photonic sensor element, and a detector. The photonic sensor element has photonic crystalline structure and is configured to include a sensor waveguide for introducing the electromagnetic wave, and a sensing resonator electromagnetically coupled to the sensor waveguide for resonating the electromagnetic wave at specific wavelength. The sensing resonator is exposed to an atmosphere including the target substance so as to vary a characteristic of the electromagnetic wave emitted from the sensing resonator. The detector is configured to receive the electromagnetic wave emitted from the sensing resonator to recognize an intensity variation of the electromagnetic wave and issue a signal indicative of a characteristic of the target substance.

摘要翻译： 一种用于使用光子晶体检测目标物质的高灵敏度和可压实的目标物质传感器及其方法。 传感器包括提供电磁波的电磁波源，光子传感器元件和检测器。 光子传感器元件具有光子晶体结构，并且被配置为包括用于引入电磁波的传感器波导和电磁耦合到传感器波导的感测谐振器，以谐振特定波长的电磁波。 感测谐振器暴露于包括目标物质的气氛，以便改变从感测谐振器发射的电磁波的特性。 检测器被配置为接收从感测谐振器发射的电磁波，以识别电磁波的强度变化并发出指示目标物质的特性的信号。

公开(公告)号：US20080252890A1

公开(公告)日：2008-10-16

申请号：US10593646

申请日：2005-03-23

申请人： Susumu Noda ,  Takashi Asano ,  Hitomichi Takano

发明人： Susumu Noda ,  Takashi Asano ,  Hitomichi Takano

IPC分类号： G01N21/00

CPC分类号： G02B6/1225 ,  B82Y20/00 ,  G01N21/3504 ,  G01N21/774 ,  G01N21/7746 ,  G01N2021/7776

摘要： A highly sensitive and compactible target substance sensor for detection of the target substance using a photonic crystal and a method thereof are provided.The sensor of the present invention includes an electromagnetic wave source of supplying an electromagnetic wave, a photonic sensor element, and a detector. The photonic sensor element has photonic crystalline structure and is configured to include a sensor waveguide for introducing the electromagnetic wave, and a sensing resonator electromagnetically coupled to the sensor waveguide for resonating the electromagnetic wave at specific wavelength. The sensing resonator is exposed to an atmosphere including the target substance so as to vary a characteristic of the electromagnetic wave emitted from the sensing resonator. The detector is configured to receive the electromagnetic wave emitted from the sensing resonator to recognize an intensity variation of the electromagnetic wave and issue a signal indicative of a characteristic of the target substance.

摘要翻译： 提供了一种用于使用光子晶体检测目标物质的高灵敏度和可压缩的目标物质传感器及其方法。 本发明的传感器包括提供电磁波的电磁波源，光子传感器元件和检测器。 光子传感器元件具有光子晶体结构，并且被配置为包括用于引入电磁波的传感器波导和电磁耦合到传感器波导的感测谐振器，以谐振特定波长的电磁波。 感测谐振器暴露于包括目标物质的气氛，以便改变从感测谐振器发射的电磁波的特性。 检测器被配置为接收从感测谐振器发射的电磁波，以识别电磁波的强度变化并发出指示目标物质的特性的信号。

公开(公告)号：US08710735B2

公开(公告)日：2014-04-29

申请号：US14000531

申请日：2012-02-10

申请人： Takeo Shirai ,  Yoshiharu Nakamura ,  Hitomichi Takano

发明人： Takeo Shirai ,  Yoshiharu Nakamura ,  Hitomichi Takano

IPC分类号： H01L23/48

CPC分类号： H05B33/06 ,  H01L51/5212 ,  H01L2251/5361 ,  H05B33/10 ,  H05B33/26

摘要： The organic electroluminescent device includes: a first electrode of conductive and light transmissive material; a light emitting layer of organic material on the first electrode; a second electrode of conductive material on the layer; first and second terminal parts placed on first and second ends of the layer in a first direction crossing a thickness direction of the layer and coupled to the first and second electrodes, respectively; and an auxiliary electrode which is on the first electrode and beside the layer in a second direction crossing the thickness direction and the first direction and coupled to the first electrode, and has an elongated shape extending in the first direction, and made of material having specific resistance smaller than the first electrode, and includes portions with different thicknesses such that sheet resistance is increased with an increase in distance from the first terminal part in a lengthwise direction thereof.

摘要翻译： 有机电致发光器件包括：导电和透光材料的第一电极; 在所述第一电极上的有机材料的发光层; 该层上的导电材料的第二电极; 第一和第二端子部分沿着与层的厚度方向交叉的第一方向分别放置在层的第一和第二端上并且分别耦合到第一和第二电极; 以及辅助电极，其在所述第一电极上并且在所述层的旁边沿与所述厚度方向和所述第一方向交叉的第二方向并且耦合到所述第一电极，并且具有沿所述第一方向延伸的细长形状，并且由具有特定 电阻小于第一电极，并且包括具有不同厚度的部分，使得薄层电阻随着其长度方向与第一端子部分的距离的增加而增加。

公开(公告)号：US20060269188A1

公开(公告)日：2006-11-30

申请号：US10569922

申请日：2004-08-26

申请人： Susumu Noda ,  Takashi Asano ,  Bong-Shik Song ,  Hitomichi Takano

发明人： Susumu Noda ,  Takashi Asano ,  Bong-Shik Song ,  Hitomichi Takano

IPC分类号： G02B6/26

CPC分类号： G02B6/12007 ,  B82Y20/00 ,  G02B6/1225 ,  G02B2006/12164 ,  H01P1/2005

摘要： In this electromagnetic wave frequency filter, an electromagnetic wave of a predetermined frequency matching a resonant frequency of a resonator 41 is transmitted from an input waveguide 2 to an output waveguide 3 through the resonator 41, and is outputted from a drop port P31. This filter has an input-waveguide-side reflector 211 and an output-waveguide-side reflector 311, which reflect the electromagnetic wave of the predetermined frequency. The electromagnetic wave frequency filter satisfies the following relation: Qinb/(1−cos θ1)