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    Method for producing polymer, polymer, composition for forming insulating film, method for producing insulating film, and insulating film
    2.
    发明授权
    Method for producing polymer, polymer, composition for forming insulating film, method for producing insulating film, and insulating film 有权
    聚合物，聚合物，绝缘膜形成用组合物，绝缘膜的制造方法以及绝缘膜的制造方法

    公开(公告)号：US07528207B2

    公开(公告)日：2009-05-05

    申请号：US11485508

    申请日：2006-07-13

    申请人： Hisashi Nakagawa ,  Masahiro Akiyama ,  Takahiko Kurosawa ,  Atsushi Shiota

    发明人： Hisashi Nakagawa ,  Masahiro Akiyama ,  Takahiko Kurosawa ,  Atsushi Shiota

    IPC分类号： C08G77/50

    CPC分类号： H01L21/02126 ,  C09D183/14 ,  H01B3/30 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3121 ,  H01L21/3122

    摘要： A method of producing a polymer includes hydrolyzing and condensing a hydrolyzable-group-containing silane monomer (B) in the presence of one or more polycarbosilanes (A), at least one of the polycarbosilanes (A) being a polycarbosilane (I) having a weight average molecular weight of 500 or more and obtained by reacting a compound of the following general formula (1) in the presence of at least one of an alkali metal and an alkaline earth metal, R1mY3-mSiCR2nX3-n  (1) wherein R1 and R2 individually represent a monovalent organic group or a hydrogen atom, X represents a halogen atom, Y represents a halogen atom or an alkoxy group, and m and n individually represent integers from 0 to 2.

    摘要翻译： 一种聚合物的制造方法，在一种或多种聚碳硅烷（A）的存在下水解和缩合含有水解性基团的硅烷单体（B），所述聚碳硅烷（A）中的至少一种为具有 通过在碱金属和碱土金属中的至少一种的存在下使下列通式（1）的化合物反应得到的重均分子量为500以上， 线式公式“end =”lead“？> R1mY3-mSiCR2nX3-n（1）<？in-line-formula description =”In-line Formulas“end =”tail“？>其中R1和R2分别表示一价有机物 基团或氢原子，X表示卤素原子，Y表示卤素原子或烷氧基，m和n分别表示0〜2的整数。

    Method for Forming Organic Silica Film, Organic Silica Film, Wiring Structure, Semiconductor Device, and Composition for Film Formation
    10.
    发明申请
    Method for Forming Organic Silica Film, Organic Silica Film, Wiring Structure, Semiconductor Device, and Composition for Film Formation 审中-公开
    用于形成有机硅膜，有机硅膜，接线结构，半导体器件和用于成膜的组合物的方法

    公开(公告)号：US20080038527A1

    公开(公告)日：2008-02-14

    申请号：US11596188

    申请日：2005-05-11

    申请人： Masahiro Akiyama ,  Takahiko Kurosawa ,  Hisashi Nakagawa ,  Atsushi Shiota

    发明人： Masahiro Akiyama ,  Takahiko Kurosawa ,  Hisashi Nakagawa ,  Atsushi Shiota

    IPC分类号： B05D3/02 ,  B32B27/28 ,  C08G77/04

    CPC分类号： H01L21/02126 ,  C09D183/14 ,  H01B3/46 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02351 ,  H01L21/31058 ,  H01L21/31633

    摘要： A method of forming an organic silica film capable of efficiently curing a coating at a lower dose of electron beams in a shorter time at a lower temperature and forming a film which may be suitably used as an interlayer dielectric for semiconductor devices and the like and exhibits a low relative dielectric constant and excellent mechanical strength, adhesion, plasma resistance, and chemical resistance, a film-forming composition used for the method, an organic silica film obtained by the method, a wiring structure including the organic silica film, and a semiconductor device including the wiring structure. A method of forming an organic silica film according to the invention includes forming a coating including a silicon compound having an —Si—O—Si— structure and an —Si—CH2—Si— structure on a substrate, heating the coating, and curing the coating by applying electron beams.

    摘要翻译： 一种形成有机二氧化硅膜的方法，其能够在较低温度下在较短时间内以较低剂量的电子束有效地固化涂层，并形成适合用作半导体器件等的层间电介质的膜，并且显示出 低相对介电常数和优异的机械强度，粘附性，等离子体电阻和耐化学性，用于该方法的成膜组合物，通过该方法获得的有机二氧化硅膜，包含有机二氧化硅膜的布线结构和半导体 装置包括布线结构。 根据本发明的形成有机二氧化硅膜的方法包括在a上形成包含具有-Si-O-Si-结构和-Si-CH 2 -Si-结构的硅化合物的涂层 衬底，加热涂层，并通过施加电子束固化涂层。