摘要:
A continuous film-forming apparatus includes a plurality of reaction chambers each capable of forming a semiconductor film with a different chemical composition. The reaction chambers are arranged such that a substrate web on which a film is to be formed can be hermetically moved through each of the reaction chambers under a vacuum condition. A gas gate is disposed at a central position between each pair of adjacent reaction chambers, with each gas gate provided with a slit for communication between the adjacent reaction chambers. The slit is provided with a clearance which allows the substrate web to move therethrough, is structured such that gate gas can be introduced therein from above and beneath the substrate which is moved through the clearance, and is dimensioned such that opposite sides proximate to the position where the gate gas is introduced have different heights in accordance with the inner pressure upon film formation of each of the adjacent reaction chambers in communication with each other by the slit.
摘要:
The present invention aims to provide a continuous forming method and apparatus for functional deposited films having excellent characteristics while preventing any mutual mixture of gases between film forming chambers having different pressures, wherein semiconductor layers of desired conductivity type are deposited on a strip-like substrate within a plurality of film forming chambers, by plasma CVD, while the strip-like substrate is moved continuously in a longitudinal direction thereof through the plurality of film forming chambers connected via gas gates having means for introducing a scavenging gas into a slit-like separation passage, characterized in that at least one of the gas gates connecting the i-type layer film forming chamber for forming the semiconductor junction and the n- or p-type layer film forming chamber having higher pressure than the i-type layer film forming chamber has the scavenging gas introducing position disposed on the n- or p-type layer film forming chamber side off from the center of the separation chamber of the gas gate.
摘要:
A deposited film forming method includes the steps of: continuously carrying a long substrate into or out of a vacuum chamber, flowing a first deposited film forming gas in a reverse direction parallel to the substrate and opposite to a conveying direction of the substrate from first gas discharging means into the vacuum chamber, exhausting the gas from first gas exhausting means, flowing a second deposited film forming gas in a forward direction parallel to the substrate and equivalent to the conveying direction of the substrate, exhausting the gas through the second gas exhausting means, and applying a discharge energy to the first and second gases.
摘要:
The present invention aims to provide a continuous forming method and apparatus for functional deposited films having excellent characteristics while preventing any mutual mixture of gases between film forming chambers having different pressures, wherein each of semiconductor layers of desired conduction type is deposited on a strip-like substrate within a plurality of film forming chambers, by plasma CVD, while the strip-like substrate is being moved continuously in a longitudinal direction thereof through the plurality of film forming chambers connected via a gas gate having the structure of introducing a scavenging gas into a slit-like separation passage, characterized in that at least one of the gas gates connecting the i-type layer film forming chamber for forming the semiconductor junction and the n- or p-type layer film forming chamber having higher pressure than the i-type layer film forming chamber has the scavenging gas introducing position disposed on the n- or p-type layer film forming chamber side off the center of the separation chamber of the gas gate.
摘要:
A deposited film forming method includes the steps of: continuously carrying a long substrate into or out of a vacuum chamber, flowing a first deposited film forming gas in a reverse direction parallel to the substrate and opposite to a conveying direction of the substrate from first gas discharging means into the vacuum chamber, exhausting the gas from first gas exhausting means, flowing a second deposited film forming gas in a forward direction parallel to the substrate and equivalent to the conveying direction of the substrate, exhausting the gas through the second gas exhausting means, and applying a discharge energy to the first and second gases.
摘要:
There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).
摘要:
There is provided a method of forming a photovoltaic element, in which a p-type semiconductor layer is formed in a device for forming a semiconductor thin film having a cathod electrode structure, in which in a plasma discharge space, the surface area of a cathod electrode in a plasma discharge space is larger than the sum of surface areas of a belt-like member and an anode electrode, a potential of said cathod electrode at the time of excitation of glow discharge is positive relative to the belt-like member and the anode electrode, and a separator electrode partially constituting the cathod electrode is configured to have a form of a fin or a block, and an n-type semiconductor layer is formed in a device for forming a semiconductor thin film having a cathod electrode structure of a capacitive-coupling, parallel-plate type. Thereby, a photovoltaic element having a high quality and superior uniformity over a large area, less defects, superior photo deterioration property and improved series resistance can be manufactured providing a high throughput in large quantities with good reproducibility.
摘要:
There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).
摘要:
There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).
摘要:
Provided are a photovoltaic element suitable for practical use, low in cost, high in reliability, and high in photoelectric conversion efficiency, and a fabrication process thereof. In the photovoltaic element having stacked layers of non-single-crystal semiconductors, at least an i-type semiconductor layer and a second conductivity type semiconductor layer are stacked on a first conductivity type semiconductor layer, and the second conduction type semiconductor layer has a layer A formed by exposing the surface of the i-type semiconductor layer to a plasma containing a valence electron controlling agent and a layer B deposited on the layer A by a CVD process using at least the valence electron controlling agent and the main constituent elements of the i-type semiconductor layer.