摘要:
The present invention provides a thin film transistor comprising a drain electrode and a source electrode separated by a channel region formed over a contact portion with an amorphous silicon layer and wherein an impurity from the channel region is removed and a remaining impurity is diffused into the contact portion to form a contact layer wherein the contact layer has a second resistance at least lower than the first resistance.
摘要:
An active matrix display device using a thin film transistor as a switching element in the displaying portion or driving portion is characterized in that said thin film transistor includes an insulating substrate on which a gate electrode, a gate insulating film, a semiconductor layer, a drain electrode, a source electrode and a passivation film are successively laminated. The thin film transistor is further characterized such that the surface portion of the semiconductor layer on the side of the passivation film is porous, which enables the device to be stably driven with a low off-current even in the case of disposing an organic passivation film and a picture element electrode on the thin film transistor.
摘要:
The present invention provides a thin film transistor comprising a drain electrode and a source electrode separated by a channel region formed over a contact portion with an amorphous silicon layer and wherein an impurity from the channel region is removed and a remaining impurity is diffused into the contact portion to form a contact layer wherein the contact layer has a second resistance at least lower than the first resistance.
摘要:
The present invention provides a thin film transistor comprising a drain electrode and a source electrode separated by a channel region formed over a contact portion with an amorphous silicon layer and wherein an impurity from the channel region is removed and a remaining impurity is diffused into the contact portion to form a contact layer wherein the contact layer has a second resistance at least lower than the first resistance.
摘要:
Using a lower electrode as a photomask, a lyophobic region having generally the same pattern as that of the lower electrode and a lyophilic region having a pattern which is generally the inversion of the lower electrode pattern are formed on an insulating film. A conductive ink is applied to the lyophobic region and baked. Thus, an upper electrode having a pattern which is generally the inversion of the lower electrode pattern is formed in a self-alignment manner. Therefore no misalignment occurs even if a printing method is used. Thus, a semiconductor device such as an active-matrix thin-film transistor substrate can be fabricated by using a printing method.
摘要:
In the present invention, a lower electrode is utilized as a photomask to form a liquid-repellent region having a generally same pattern shape as that of the lower electrode and a liquid-attracting region having a generally reversed pattern shape on an insulating film. A conductive ink is coated and calcined in the liquid-attracting region to form an upper electrode having a generally reversed pattern shape to the lower electrode in a self-aligned manner, eliminating the occurrence of misregistration even when a printing method is used. Consequently, semiconductor devices such as an active matrix thin film transistor substrate can be formed using a printing method.
摘要:
The present method prevents malfunctions in switching caused by a light leakage current in an active matrix type thin film transistor substrate for a liquid crystal display and prevents display failures, by selectively disposing a self assembled monolayer film in a gate electrode-projected region of the surface of an insulator film with high definition, and by selectively improving the orientation order of an organic semiconductor film only in the gate electrode-projected region without improving the order at an irradiated portion with light outside the gate electrode-projected region.
摘要:
In the present invention, a lower electrode is utilized as a photomask to form a liquid-repellent region having a generally same pattern shape as that of the lower electrode and a liquid-attracting region having a generally reversed pattern shape on an insulating film. A conductive ink is coated and calcined in the liquid-attracting region to form an upper electrode having a generally reversed pattern shape to the lower electrode in a self-aligned manner, eliminating the occurrence of misregistration even when a printing method is used. Consequently, semiconductor devices such as an active matrix thin film transistor substrate can be formed using a printing method.
摘要:
The present method prevents malfunctions in switching caused by a light leakage current in an active matrix type thin film transistor substrate for a liquid crystal display and prevents display failures, by selectively disposing a self assembled monolayer film in a gate electrode-projected region of the surface of an insulator film with high definition, and by selectively improving the orientation order of an organic semiconductor film only in the gate electrode-projected region without improving the order at an irradiated portion with light outside the gate electrode-projected region.
摘要:
In the present invention, a lower electrode is utilized as a photomask to form a liquid-repellent region having a generally same pattern shape as that of the lower electrode and a liquid-attracting region having a generally reversed pattern shape on an insulating film. A conductive ink is coated and calcined in the liquid-attracting region to form an upper electrode having a generally reversed pattern shape to the lower electrode in a self-aligned manner, eliminating the occurrence of misregistration even when a printing method is used. Consequently, semiconductor devices such as an active matrix thin film transistor substrate can be formed using a printing method.