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公开(公告)号：US08821974B2
公开(公告)日：2014-09-02
申请号：US13212716
申请日：2011-08-18
CPC分类号： H01L21/02057 , B08B3/08 , F26B1/00 , H01L21/02068 , H01L21/306 , H01L21/3105 , H01L21/321 , H01L21/67028 , H01L21/67051 , H01L21/6708 , H05K3/227
摘要： A liquid hydrophobizing agent is supplied to a substrate and a surface of the substrate is hydrophobized. A solvent, lower in surface tension than water and capable of dissolving the hydrophobizing agent, is supplied to the substrate in a pre-drying rinsing step. Thereafter, the substrate is dried. The substrate to be processed is maintained in a state of not contacting water until it is dried after being hydrophobized.
摘要翻译： 将液体疏水化剂供给至基材，将基材的表面疏水化。 在预干燥漂洗步骤中，向基材供给溶解于表面张力低于水并能够溶解疏水化剂的溶剂。 之后，干燥基板。 待处理的基材保持在不接触水的状态，直到其被疏水化后干燥。
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公开(公告)号：US06465765B2
公开(公告)日：2002-10-15
申请号：US09782848
申请日：2001-02-14
IPC分类号： H05B606
CPC分类号： H05B6/108
摘要： A fluid heating apparatus is provided which comprises a heat-generating bent tube formed of an electrically conductive material in a tubular configuration and having opposite ends connected in communication to piping through which fluid to be heated is passed, a coil provided outside the heat-generating bent tube and wound to surround the heat-generating bent tube, and a power supply unit for feeding a high-frequency current through the coil. The fluid heating apparatus suppresses the generation of particles in the path of the fluid and may be used to heat gas or liquid in an apparatus for processing semiconductor substrates and flat panel substrates.
摘要翻译： 提供了一种流体加热装置，其包括由管状构造的导电材料形成的发热弯曲管，并且具有连接到与待加热流体通过的管道连通的相对端，设置在发热的外部的线圈 弯曲的管并缠绕以围绕发热弯管，以及用于将高频电流馈送通过线圈的电源单元。 流体加热装置抑制在流体路径中产生颗粒，并且可以用于加热半导体基板和平板基板的处理装置中的气体或液体。
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公开(公告)号：US07243911B2
公开(公告)日：2007-07-17
申请号：US11043823
申请日：2005-01-26
CPC分类号： H01L21/67086 , B08B3/102 , B08B2203/005 , H01L21/67057 , Y10S134/902
摘要： A substrate treating apparatus for performing a predetermined treatment of substrates includes a treating tank for storing a treating solution, a holder for holding a plurality of substrates arranged in one direction inside the treating tank, and a bubble generating device for generating bubbles in the treating solution stored in the treating tank. The bubble generating device includes a plurality of cylindrical bodies extending in the one direction and arranged in a direction perpendicular to the one direction. Each of the cylindrical bodies is at least partly formed of a porous member extending in the one direction.
摘要翻译： 用于进行基板的预定处理的基板处理装置包括：用于储存处理溶液的处理槽，用于保持处理槽内的沿一个方向布置的多个基板的保持器，以及用于在处理液中产生气泡的气泡产生装置 储存在处理槽中。 气泡产生装置包括在垂直于该一个方向的方向上沿一个方向延伸的多个圆柱体。 每个圆柱体至少部分地由沿一个方向延伸的多孔构件形成。
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公开(公告)号：US20050161839A1
公开(公告)日：2005-07-28
申请号：US11043823
申请日：2005-01-26
CPC分类号： H01L21/67086 , B08B3/102 , B08B2203/005 , H01L21/67057 , Y10S134/902
摘要： A substrate treating apparatus for performing a predetermined treatment of substrates includes a treating tank for storing a treating solution, a holder for holding a plurality of substrates arranged in one direction inside the treating tank, and a bubble generating device for generating bubbles in the treating solution stored in the treating tank. The bubble generating device includes a plurality of cylindrical bodies extending in the one direction and arranged in a direction perpendicular to the one direction. Each of the cylindrical bodies is at least partly formed of a porous member extending in the one direction.
摘要翻译： 用于进行基板的预定处理的基板处理装置包括：用于储存处理溶液的处理槽，用于保持处理槽内的沿一个方向布置的多个基板的保持器，以及用于在处理液中产生气泡的气泡产生装置 储存在处理槽中。 气泡产生装置包括在垂直于该一个方向的方向上沿一个方向延伸的多个圆柱体。 每个圆柱体至少部分地由沿一个方向延伸的多孔构件形成。
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公开(公告)号：US07964042B2
公开(公告)日：2011-06-21
申请号：US12179154
申请日：2008-07-24
申请人： Tomonori Kojimaru , Katsuhiko Miya
发明人： Tomonori Kojimaru , Katsuhiko Miya
IPC分类号： B08B3/04
CPC分类号： H01L21/67028 , H01L21/67034
摘要： After the rinsing processing is completed, the rotation speed of the substrate is reduced from 600 rpm to 10 rpm to form a puddle-like DIW liquid film. After the supply of DIW is stopped, the control unit waits for a predetermined time (0.5 seconds) so that the film thickness t1 of the puddle-like liquid film becomes approximately uniform. Then, IPA is discharged to a central part of the surface of the substrate at a flow rate of 100 (mL/min) for instance. By the supply of IPA, DIW is replaced with IPA at the central part of the surface of the substrate to form a replaced region. Further, after three seconds of IPA supply, the rotation speed of the substrate is accelerated from 10 rpm to 300 rpm. This causes the replaced region to expand in a radial direction of the substrate so that the entire surface of the substrate is replaced with the low surface-tension solvent.
摘要翻译： 冲洗处理结束后，基板的转速从600rpm降低到10rpm，形成水溶性DIW液膜。 在DIW的供给停止之后，控制单元等待预定时间（0.5秒），使得水坑状液膜的膜厚度t1变得大致均匀。 然后，以100（mL / min）的流量将IPA排出到基板表面的中心部分。 通过IPA的供应，DIW在基材表面的中心部分被IPA代替，以形成替代区域。 此外，在三秒的IPA供应之后，基板的转速从10rpm加速到300rpm。 这使得更换的区域在基板的径向方向上膨胀，使得基板的整个表面被低表面张力溶剂替代。
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公开(公告)号：US20090032067A1
公开(公告)日：2009-02-05
申请号：US12179154
申请日：2008-07-24
申请人： Tomonori Kojimaru , Katsuhiko Miya
发明人： Tomonori Kojimaru , Katsuhiko Miya
CPC分类号： H01L21/67028 , H01L21/67034
摘要： After the rinsing processing is completed, the rotation speed of the substrate is reduced from 600 rpm to 10 rpm to form a puddle-like DIW liquid film. After the supply of DIW is stopped, the control unit waits for a predetermined time (0.5 seconds) so that the film thickness t1 of the puddle-like liquid film becomes approximately uniform. Then, IPA is discharged to a central part of the surface of the substrate at a flow rate of 100 (mL/min) for instance. By the supply of IPA, DIW is replaced with IPA at the central part of the surface of the substrate to form a replaced region. Further, after three seconds of IPA supply, the rotation speed of the substrate is accelerated from 10 rpm to 300 rpm. This causes the replaced region to expand in a radial direction of the substrate so that the entire surface of the substrate is replaced with the low surface-tension solvent.
摘要翻译： 冲洗处理结束后，基板的转速从600rpm降低到10rpm，形成水溶性DIW液膜。 在DIW的供给停止之后，控制单元等待预定时间（0.5秒），使得水坑状液膜的膜厚度t1变得大致均匀。 然后，以100（mL / min）的流量将IPA排出到基板表面的中心部分。 通过IPA的供应，DIW在基材表面的中心部分被IPA代替，以形成替代区域。 此外，在三秒的IPA供应之后，基板的转速从10rpm加速到300rpm。 这使得更换的区域在基板的径向方向上膨胀，使得基板的整个表面被低表面张力溶剂替代。
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