公开(公告)号：US06933159B2

公开(公告)日：2005-08-23

申请号：US10628550

申请日：2003-07-28

申请人： Masahiro Kito ,  Masato Ishino ,  Tomoaki Toda ,  Yoshiaki Nakano

发明人： Masahiro Kito ,  Masato Ishino ,  Tomoaki Toda ,  Yoshiaki Nakano

IPC分类号： H01S5/00 ,  H01S5/12 ,  H01S5/20 ,  H01S5/34 ,  H01S5/343 ,  H01L21/66

CPC分类号： B82Y20/00 ,  H01S5/1228 ,  H01S5/1231 ,  H01S5/20 ,  H01S5/341 ,  H01S5/34306 ,  H01S5/3434

摘要： In a method for fabricating a semiconductor laser device, a plurality of grooves are formed in a surface of one conductive type of an InP layer. The InP layer is thermally treated in an atmosphere including at least a gas containing phosphorus and a gas containing arsenic in a mixed state, thereby forming a plurality of active regions made of InAsP in the plurality of grooves. An other conductive type of semiconductor layer is formed after the active regions are formed.

摘要翻译： 在制造半导体激光器件的方法中，在一个导电类型的InP层的表面上形成多个凹槽。 InP层在包含至少含有磷的气体和含有砷的气体的气氛中进行热处理，在多个槽中形成由InAsP构成的多个活性区域。 在形成有源区之后形成另一种导电类型的半导体层。

公开(公告)号：US06625189B1

公开(公告)日：2003-09-23

申请号：US09521512

申请日：2000-03-08

申请人： Masahiro Kito ,  Masato Ishino ,  Tomoaki Toda ,  Yoshiaki Nakano

发明人： Masahiro Kito ,  Masato Ishino ,  Tomoaki Toda ,  Yoshiaki Nakano

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/1228 ,  H01S5/1231 ,  H01S5/20 ,  H01S5/341 ,  H01S5/34306 ,  H01S5/3434

摘要： A semiconductor laser device includes an InP substrate and a multi-layered structure formed on the InP substrate, wherein the multi-layered structure includes at least a plurality of active regions for outputting a laser beam, and the plurality of active regions each are provided in each of a plurality of grooves dented toward the InP substrate.

摘要翻译： 半导体激光器件包括InP衬底和形成在InP衬底上的多层结构，其中多层结构包括用于输出激光束的至少多个有源区域，并且多个有源区域分别设置在 多个槽中的每一个朝向InP衬底凹陷。

公开(公告)号：US06636541B1

公开(公告)日：2003-10-21

申请号：US09516835

申请日：2000-03-02

申请人： Hisashi Nakayama ,  Masahiro Kito ,  Masato Ishino ,  Yasushi Matsui

发明人： Hisashi Nakayama ,  Masahiro Kito ,  Masato Ishino ,  Yasushi Matsui

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/34 ,  H01S5/3403 ,  H01S5/3409 ,  H01S5/3415

摘要： A semiconductor laser device includes a substrate, a p-type cladding layer and a n-type cladding layer provided on the substrate, and an active layer provided between the p-type cladding layer and the n-type cladding layer, having at least two barrier layers and at least two well layers, the barrier layers and the well layers being disposed alternately. Band offsets in a conduction band between the barrier layers and the well layers are provided so as to increase from the n-type cladding layer aide toward the p-type cladding layer side.

摘要翻译： 半导体激光装置包括基板，设置在基板上的p型覆层和n型覆层，以及设置在p型覆层和n型覆层之间的有源层，具有至少两个 阻挡层和至少两个阱层，阻挡层和阱层交替布置。 阻挡层和阱层之间的导带中的带偏移被设置为从n型包覆层向p型包覆层侧增加。

公开(公告)号：US6151351A

公开(公告)日：2000-11-21

申请号：US534959

申请日：1995-09-28

申请人： Masahiro Kito ,  Masato Ishino ,  Nobuyuki Otsuka ,  Yasushi Matsui ,  Shinji Nakamura

发明人： Masahiro Kito ,  Masato Ishino ,  Nobuyuki Otsuka ,  Yasushi Matsui ,  Shinji Nakamura

IPC分类号： H01L21/205 ,  H01S5/026 ,  H01S5/0625 ,  H01S5/12 ,  H01S5/125 ,  H01S5/20 ,  H01S5/227 ,  H01S5/323 ,  H01S5/343 ,  H01S3/085 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01L21/02392 ,  H01L21/0243 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01S5/0265 ,  H01S5/12 ,  H01S5/1228 ,  H01S5/125 ,  H01S5/06256 ,  H01S5/1231 ,  H01S5/2077 ,  H01S5/2081 ,  H01S5/2272 ,  H01S5/2275 ,  H01S5/32391 ,  H01S5/34306 ,  H01S5/3434 ,  H01S5/34373

摘要： In a distributed feedback semiconductor laser includes an InP substrate and a multiple layer structure formed on a main surface of the InP substrate, the multiple layer structure includes at least an active layer for emitting laser light and a periodical structure for distributed feedback of the laser light, and the periodical structure includes a plurality of semiconductor regions each having a triangular cross section in a direction perpendicular to the main surface of the InP substrate and parallel to a cavity length of the distributed feedback semiconductor laser, the triangular cross section projecting toward the InP substrate.

摘要翻译： 在分布式反馈半导体激光器中包括InP衬底和形成在InP衬底的主表面上的多层结构，该多层结构至少包括用于发射激光的有源层和用于激光的分布反馈的周期性结构 并且周期性结构包括多个半导体区域，每个半导体区域在垂直于InP衬底的主表面的方向上具有三角形横截面并且平行于分布式反馈半导体激光器的腔长度，三角形横截面朝向InP 基质。

公开(公告)号：US06650672B2

公开(公告)日：2003-11-18

申请号：US09805511

申请日：2001-03-13

申请人： Masahiro Kito ,  Masato Ishino

发明人： Masahiro Kito ,  Masato Ishino

IPC分类号： H01S500

CPC分类号： H01S5/10 ,  H01S5/105

摘要： A semiconductor laser element including: a three-dimensional photonic crystal structure which has a light confining effect and includes alternating first and second refractive index changing layers, where refractive index of light periodically changes in a first direction in each first refractive index changing layer and periodically changes in a second direction in each second refractive index changing layer; and an active unit which is disposed in a portion having a predetermined refractive index inside the three-dimensional photonic crystal structure, and generates a laser beam in response to reception of electric power.

公开(公告)号：US6107112A

公开(公告)日：2000-08-22

申请号：US414756

申请日：1999-10-07

申请人： Masahiro Kito ,  Masato Ishino ,  Nobuyuki Otsuka ,  Yasushi Matsui ,  Shinji Nakamura

发明人： Masahiro Kito ,  Masato Ishino ,  Nobuyuki Otsuka ,  Yasushi Matsui ,  Shinji Nakamura

IPC分类号： H01L21/205 ,  H01S5/026 ,  H01S5/0625 ,  H01S5/12 ,  H01S5/125 ,  H01S5/20 ,  H01S5/227 ,  H01S5/323 ,  H01S5/343 ,  H01L21/00

CPC分类号： B82Y20/00 ,  H01L21/02392 ,  H01L21/0243 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01S5/0265 ,  H01S5/12 ,  H01S5/1228 ,  H01S5/125 ,  H01S5/06256 ,  H01S5/1231 ,  H01S5/2077 ,  H01S5/2081 ,  H01S5/2272 ,  H01S5/2275 ,  H01S5/32391 ,  H01S5/34306 ,  H01S5/3434 ,  H01S5/34373

摘要： In a distributed feedback semiconductor laser includes an InP substrate and a multiple layer structure formed on a main surface of the InP substrate, the multiple layer structure includes at least an active layer for emitting laser light and a periodical structure for distributed feedback of the laser light, and the periodical structure includes a plurality of semiconductor regions each having a triangular cross section in a direction perpendicular to the main surface of the InP substrate and parallel to a cavity length of the distributed feedback semiconductor laser, the triangular cross section projecting toward the InP substrate.

公开(公告)号：US5652762A

公开(公告)日：1997-07-29

申请号：US520021

申请日：1995-08-28

申请人： Nobuyuki Otsuka ,  Masahiro Kito ,  Masato Ishino ,  Yasushi Matsui

发明人： Nobuyuki Otsuka ,  Masahiro Kito ,  Masato Ishino ,  Yasushi Matsui

IPC分类号： H01L33/00 ,  H01L33/06 ,  H01S5/32 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19 ,  H01L29/06

CPC分类号： H01S5/34 ,  B82Y20/00 ,  H01L33/0062 ,  H01L33/06 ,  H01S5/32 ,  H01S5/3207 ,  H01S5/3403 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/3434

摘要： The semiconductor laser device of the invention includes: a strained quantum well structure including a well layer and a barrier layer, and a semiconductor substrate for supporting the strained quantum well structure. In the semiconductor laser device, at least one of the well layer and the barrier layer is composed of a mixed crystal where an atomic ordering is generated.

摘要翻译： 本发明的半导体激光器件包括：包括阱层和阻挡层的应变量子阱结构，以及用于支撑应变量子阱结构的半导体衬底。 在半导体激光器件中，阱层和阻挡层中的至少一个由产生原子排列的混晶构成。

公开(公告)号：US5319657A

公开(公告)日：1994-06-07

申请号：US957786

申请日：1992-10-08

申请人： Nobuyuki Otsuka ,  Masahiro Kito ,  Masato Ishino ,  Yasushi Matsui

发明人： Nobuyuki Otsuka ,  Masahiro Kito ,  Masato Ishino ,  Yasushi Matsui

IPC分类号： H01S5/30 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/305 ,  H01S5/34 ,  H01S5/3054 ,  H01S5/309 ,  H01S5/3403 ,  H01S5/3407 ,  H01S5/34306 ,  H01S5/34313

摘要： The semiconductor laser comprises a Sn doped InP substrate 1, n-InGaAsP wave guide layer 2, 5 nm thick InGaAs well layer 3, 3.5 nm thick undoped InGaAsP layer 4, 3 nm thick p-InGaAsP modulation doping layer 5, 3.5 nm thick undoped InGaAsP layer 6, a modulation doping quantum well layer 7 with ten wells, a 90 nm thick p-InGaAsP layer 8, a p-InP clad layer 9 (Zn=7.times.10.sup.17 cm.sup.-3), p-n-p current block layer 10, and a mesa-shaped active layer region 11. An Au/sn n-electrode 12 and if Au/Zn p-electrode 13 are formed by vapor deposition to complete the laser structure.

摘要翻译： 半导体激光器包括Sn掺杂的InP衬底1，n-InGaAsP波导层2，5nm厚的InGaAs阱层3,3.5nm厚的未掺杂InGaAsP层4,3nm厚的p-InGaAsP调制掺杂层5，3.5nm厚的未掺杂 InGaAsP层6，具有10个阱的调制掺杂量子阱层7，90nm厚的p-InGaAsP层8，p-InP包覆层9（Zn = 7×10 17 cm -3），pnp电流阻挡层10和台面 形Au / Sn电极12，如果通过气相沉积形成Au / Zn p电极13以完成激光结构。

公开(公告)号：US06697392B2

公开(公告)日：2004-02-24

申请号：US10323164

申请日：2002-12-18

申请人： Masato Ishino

发明人： Masato Ishino

IPC分类号： H01S310

CPC分类号： H01S5/12 ,  G02B6/305 ,  G02B6/4207 ,  G02F1/3534 ,  H01S5/4087

摘要： A single wavelength laser module utilizes difference-frequency light and includes a first laser device for oscillating light having a first wavelength and a second laser device arranged parallel to the first laser device for oscillating light having a second wavelength, an optical waveguide device arranged next to the output ends of the first and the second laser device, and an output optical fiber arranged next to the output end of the optical waveguide device. The optical waveguide device includes a coupling waveguide region and an optical wavelength conversion region. The coupling waveguide region combines light having the first wavelength and the second wavelength into a single waveguide by being optically coupled directly to the first and the second laser device. The optical wavelength conversion region includes an optical waveguide for generating difference-frequency light between the first wavelength and the second wavelength. The coupling waveguide region is coupled optically to the optical wavelength conversion region. The optical fiber is optically coupled directly to the optical waveguide of the optical waveguide device. This laser module can provide sufficient optical output without an isolator and can be mounted easily with a simple configuration.

摘要翻译： 单波长激光模块利用差频光，并且包括用于振荡具有第一波长的光的第一激光装置和与第一激光装置平行布置的第二激光装置，用于振荡具有第二波长的光;光波导装置， 第一和第二激光装置的输出端以及布置在光波导装置的输出端旁边的输出光纤。 光波导器件包括耦合波导区域和光波长转换区域。 耦合波导区域通过直接光耦合到第一和第二激光装置将具有第一波长和第二波长的光组合成单个波导。 光波长转换区域包括用于产生第一波长和第二波长之间的差频光的光波导。 耦合波导区域光耦合到光波长转换区域。 光纤直接光耦合到光波导器件的光波导。 该激光模块可以提供足够的光输出，无需隔离器，并且可以以简单的配置轻松安装。

公开(公告)号：US6110756A

公开(公告)日：2000-08-29

申请号：US132078

申请日：1998-08-10

申请人： Nobuyuki Otsuka ,  Masahiro Kitoh ,  Masato Ishino ,  Yasushi Matsui

发明人： Nobuyuki Otsuka ,  Masahiro Kitoh ,  Masato Ishino ,  Yasushi Matsui

IPC分类号： H01L29/15 ,  H01S5/22 ,  H01S5/227 ,  H01S5/343 ,  H01L21/20

CPC分类号： B82Y20/00 ,  H01L29/155 ,  H01S5/227 ,  H01S5/2205 ,  H01S5/2224 ,  H01S5/2226 ,  H01S5/2275 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/3434 ,  Y10S148/095

摘要： The semiconductor laser of the invention includes: a semiconductor substrate of a first conductivity type; a stripe-shaped multilayer structure, formed on the semiconductor substrate, the stripe-shaped multilayer structure including an active layer; and a current blocking portion formed on the semiconductor substrate on both sides of the stripe-shaped multilayer structure, wherein the current blocking portion has a first current blocking layer of a second conductivity type, and a second current blocking layer of the first conductivity type formed on the first current blocking layer, the first current blocking layer includes a low-concentration region having a relatively low concentration of an impurity of the second conductivity type, and a high-concentration region having an impurity concentration which is higher than that of the low-concentration region, and the low-concentration region is provided at a position closer to the stripe-shaped multilayer structure than the high-concentration region.

摘要翻译： 本发明的半导体激光器包括：第一导电类型的半导体衬底; 形成在所述半导体衬底上的条形多层结构，所述条形多层结构包括有源层; 以及在所述条形多层结构的两侧形成在所述半导体衬底上的电流阻挡部分，其中所述电流阻挡部分具有第二导电类型的第一电流阻挡层和形成所述第一导电类型的第二电流阻挡层 在第一电流阻挡层上，第一电流阻挡层包括具有相对低浓度的第二导电类型的杂质的低浓度区域和具有高于低浓度杂质浓度的高浓度区域 浓度区域，并且低浓度区域设置在比高浓度区域更靠近条形多层结构的位置。