公开(公告)号：US08552353B2

公开(公告)日：2013-10-08

申请号：US12989556

申请日：2009-05-07

申请人： Masahiro Kobayashi ,  Yuichiro Yamashita

发明人： Masahiro Kobayashi ,  Yuichiro Yamashita

IPC分类号： H01L27/146 ,  H04N5/335

CPC分类号： H01L27/1463 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14623 ,  H04N5/37452 ,  H04N5/37457

摘要： In a photoelectric conversion apparatus including charge storing portions in its imaging region, isolation regions for the charge storing portions include first isolation portion each having a PN junction, and second isolation portions each having an insulator. A second isolation portion is arranged between a charge storing portion and at least a part of a plurality of transistors.

摘要翻译： 在其成像区域中包括电荷存储部分的光电转换装置中，用于电荷存储部分的隔离区域包括每个具有PN结的第一隔离部分和分别具有绝缘体的第二隔离部分。 第二隔离部分布置在电荷存储部分和多个晶体管的至少一部分之间。

公开(公告)号：US08860862B2

公开(公告)日：2014-10-14

申请号：US13473442

申请日：2012-05-16

申请人： Masahiro Kobayashi ,  Yuichiro Yamashita ,  Yusuke Onuki

发明人： Masahiro Kobayashi ,  Yuichiro Yamashita ,  Yusuke Onuki

IPC分类号： H04N3/14 ,  H04N9/04 ,  H01L27/146

CPC分类号： H01L27/14623 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14643 ,  H04N5/374

摘要： A solid-state image pickup apparatus includes a photoelectric conversion unit, a charge storage unit, and a floating diffusion unit, all disposed on a semiconductor substrate. The solid-state image pickup apparatus further includes a first gate electrode disposed on the semiconductor substrate and extending between the photoelectric conversion unit and charge storage unit, and a second gate electrode disposed on the semiconductor substrate and extending between the charge storage unit and the floating diffusion unit. The solid-state image pickup apparatus further includes a light shielding member including a first part and a second part, wherein the first part is disposed over the charge storage unit and at least over the first gate electrode or the second gate electrode, and the second part is disposed between the first gate electrode and the second gate electrode such that the second part extends from the first part toward a surface of the semiconductor substrate.

摘要翻译： 固态摄像装置包括全部设置在半导体衬底上的光电转换单元，电荷存储单元和浮动扩散单元。 固体摄像装置还包括设置在半导体衬底上并在光电转换单元和电荷存储单元之间延伸的第一栅电极，以及设置在半导体衬底上并在电荷存储单元和浮置电极之间延伸的第二栅电极 扩散单元 固体摄像装置还包括遮光构件，其包括第一部分和第二部分，其中第一部分设置在电荷存储单元上方，并且至少在第一栅电极或第二栅极上，第二部分 部分设置在第一栅电极和第二栅电极之间，使得第二部分从第一部分朝向半导体衬底的表面延伸。

公开(公告)号：US08456559B2

公开(公告)日：2013-06-04

申请号：US12918685

申请日：2009-04-03

申请人： Yuichiro Yamashita ,  Masahiro Kobayashi

发明人： Yuichiro Yamashita ,  Masahiro Kobayashi

IPC分类号： H04N3/14 ,  H04N5/335 ,  H01L27/00 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14609 ,  H01L27/14643

摘要： A solid-state imaging apparatus includes the carrier holding portion and the amplifying portion in each pixel, wherein a first voltage supplied to a transfer electrode when the transfer portion for transferring carriers from the carrier holding portion to the amplifying portion is placed in a non-conducting state is opposite in polarity to a voltage supplied to the transfer electrode during the turning on period of the transfer portion, and a second voltage supplied to the control electrode of the carrier holding portion during a holding period in which the carriers are retained in the carrier holding portion is the same in polarity as the first voltage and is larger in absolute value than the first voltage.

摘要翻译： 固体成像装置包括每个像素中的载体保持部分和放大部分，其中当用于将载体从载体保持部分转移到放大部分的转印部分放置在非转移部分时，提供给转印电极的第一电压， 导通状态的极性与在转印部的接通时间期间提供给转印电极的电压极性相反，而第二电压在载体保持部分的保持期间提供给载体保持部的控制电极， 载体保持部分的极性与第一电压相同，并且绝对值大于第一电压。

公开(公告)号：US20120300106A1

公开(公告)日：2012-11-29

申请号：US13473442

申请日：2012-05-16

申请人： Masahiro Kobayashi ,  Yuichiro Yamashita ,  Yusuke Onuki

发明人： Masahiro Kobayashi ,  Yuichiro Yamashita ,  Yusuke Onuki

IPC分类号： H04N5/335

CPC分类号： H01L27/14623 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14643 ,  H04N5/374

摘要： A solid-state image pickup apparatus includes a photoelectric conversion unit, a charge storage unit, and a floating diffusion unit, all disposed on a semiconductor substrate. The solid-state image pickup apparatus further includes a first gate electrode disposed on the semiconductor substrate and extending between the photoelectric conversion unit and charge storage unit, and a second gate electrode disposed on the semiconductor substrate and extending between the charge storage unit and the floating diffusion unit. The solid-state image pickup apparatus further includes a light shielding member including a first part and a second part, wherein the first part is disposed over the charge storage unit and at least over the first gate electrode or the second gate electrode, and the second part is disposed between the first gate electrode and the second gate electrode such that the second part extends from the first part toward a surface of the semiconductor substrate.

摘要翻译： 固态摄像装置包括全部设置在半导体衬底上的光电转换单元，电荷存储单元和浮动扩散单元。 固体摄像装置还包括设置在半导体衬底上并在光电转换单元和电荷存储单元之间延伸的第一栅电极，以及设置在半导体衬底上并在电荷存储单元和浮置电极之间延伸的第二栅电极 扩散单元 固体摄像装置还包括遮光构件，其包括第一部分和第二部分，其中第一部分设置在电荷存储单元上方，并且至少在第一栅电极或第二栅极上，第二部分 部分设置在第一栅电极和第二栅电极之间，使得第二部分从第一部分朝向半导体衬底的表面延伸。

公开(公告)号：US20110084316A1

公开(公告)日：2011-04-14

申请号：US12899404

申请日：2010-10-06

申请人： Yuichiro Yamashita ,  Masahiro Kobayashi ,  Yusuke Onuki

发明人： Yuichiro Yamashita ,  Masahiro Kobayashi ,  Yusuke Onuki

IPC分类号： H01L27/148 ,  H01L31/18

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14689

摘要： A pickup device according to the present invention includes a photoelectric conversion portion, a charge holding portion configured to include a first semiconductor region, and a transfer portion configured to include a transfer gate electrode that controls a potential between the charge holding portion and a sense node. A second semiconductor region is disposed on a surface of a semiconductor region between the control electrode and the transfer gate electrode. A third semiconductor region is disposed below the second semiconductor region. An impurity concentration of the third semiconductor region is higher than the impurity concentration of the first semiconductor region.

摘要翻译： 根据本发明的拾取装置包括光电转换部分，被配置为包括第一半导体区域的电荷保持部分和被配置为包括控制电荷保持部分和感测节点之间的电位的转移栅电极的转移部分 。 第二半导体区域设置在控制电极和传输栅电极之间的半导体区域的表面上。 第三半导体区域设置在第二半导体区域的下方。 第三半导体区域的杂质浓度高于第一半导体区域的杂质浓度。

公开(公告)号：US20110032379A1

公开(公告)日：2011-02-10

申请号：US12989556

申请日：2009-05-07

申请人： Masahiro Kobayashi ,  Yuichiro Yamashita

发明人： Masahiro Kobayashi ,  Yuichiro Yamashita

IPC分类号： H04N5/228 ,  H01L27/146 ,  H01L31/09

CPC分类号： H01L27/1463 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14623 ,  H04N5/37452 ,  H04N5/37457

摘要： In a photoelectric conversion apparatus including charge storing portions in its imaging region, isolation regions for the charge storing portions include first isolation portion each having a PN junction, and second isolation portions each having an insulator. A second isolation portion is arranged between a charge storing portion and at least a part of a plurality of transistors.

摘要翻译： 在其成像区域中包括电荷存储部分的光电转换装置中，用于电荷存储部分的隔离区域包括每个具有PN结的第一隔离部分和分别具有绝缘体的第二隔离部分。 第二隔离部分布置在电荷存储部分和多个晶体管的至少一部分之间。

公开(公告)号：US09041132B2

公开(公告)日：2015-05-26

申请号：US13500043

申请日：2010-09-29

申请人： Masahiro Kobayashi ,  Yuichiro Yamashita ,  Yusuke Onuki

发明人： Masahiro Kobayashi ,  Yuichiro Yamashita ,  Yusuke Onuki

IPC分类号： H01L27/14 ,  H01L27/146 ,  H04N5/335 ,  H04N5/359 ,  H04N5/3745

CPC分类号： H01L27/14806 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/1463 ,  H04N5/335 ,  H04N5/359 ,  H04N5/37452

摘要： A solid-state image pickup device includes a plurality of pixels, each of the pixels including a photoelectric conversion portion, a charge holding portion, a floating diffusion, and a transfer portion. The pixel also includes a beneath-holding-portion isolation layer and a pixel isolation layer. An end portion on a photoelectric conversion portion side of the pixel isolation layer is away from the photoelectric conversion portion compared to an end portion on a photoelectric conversion portion side of the beneath-holding-portion isolation layer, and an N-type semiconductor region constituting part of the photoelectric conversion portion is disposed under at least part of the beneath-holding-portion isolation layer.

摘要翻译： 固体摄像装置包括多个像素，每个像素包括光电转换部分，电荷保持部分，浮动扩散部分和转印部分。 像素还包括保持下部分隔离层和像素隔离层。 与保持部隔离层的光电转换部分侧的端部相比，像素隔离层的光电转换部分侧的端部远离光电转换部分，并且构成N型半导体区域 光电转换部分的一部分设置在下保持部隔离层的至少一部分的下方。

公开(公告)号：US20110168872A1

公开(公告)日：2011-07-14

申请号：US13045761

申请日：2011-03-11

申请人： Masahiro Kobayashi ,  Yuichiro Yamashita

发明人： Masahiro Kobayashi ,  Yuichiro Yamashita

IPC分类号： H01L27/146

CPC分类号： H01L31/0224 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H04N5/37452

摘要： A solid-state imaging apparatus, controlling a potential on a semiconductor substrate for an electronic shutter operation, includes: a first semiconductor region of the first conductivity type for forming a photoelectric conversion region; a second semiconductor region of the first conductivity type, formed separately from the photoelectric conversion region, for accumulating carriers; a third semiconductor region of a second conductivity type arranged under the second semiconductor region, for operating as a potential barrier; a fourth semiconductor region of the second conductivity type extending between the first semiconductor region and the semiconductor substrate, and between the third semiconductor region and the semiconductor substrate; and a first voltage supply portion for supplying a voltage to the third semiconductor region; wherein the first voltage supply portion includes a fifth semiconductor region of the second conductivity type arranged in the pixel region, and a first electrode connected to the fifth semiconductor region.

摘要翻译： 控制用于电子快门操作的半导体衬底上的电位的固态成像装置包括：用于形成光电转换区域的第一导电类型的第一半导体区域; 第一导电类型的第二半导体区域，与光电转换区域分开形成，用于累积载流子; 布置在第二半导体区域下方的第二导电类型的第三半导体区域，用作势垒; 在所述第一半导体区域和所述半导体衬底之间以及所述第三半导体区域和所述半导体衬底之间延伸的所述第二导电类型的第四半导体区域; 以及用于向第三半导体区域提供电压的第一电压供应部分; 其中所述第一电压供应部分包括布置在所述像素区域中的所述第二导电类型的第五半导体区域，以及连接到所述第五半导体区域的第一电极。

公开(公告)号：US20110007196A1

公开(公告)日：2011-01-13

申请号：US12933471

申请日：2009-04-30

申请人： Yuichiro Yamashita ,  Masahiro Kobayashi ,  Takanori Watanabe ,  Shinsuke Kojima ,  Takeshi Ichikawa ,  Yusuke Onuki

发明人： Yuichiro Yamashita ,  Masahiro Kobayashi ,  Takanori Watanabe ,  Shinsuke Kojima ,  Takeshi Ichikawa ,  Yusuke Onuki

IPC分类号： H04N5/335

CPC分类号： H04N5/378 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14641 ,  H01L27/14643 ,  H04N5/359 ,  H04N5/37452 ,  H04N5/37457

摘要： A solid-state imaging apparatus including a plurality of pixels each including: a first holding portion for holding signal carriers from a photoelectric conversion portion; an amplifying portion for amplifying and reading a signal based on the signal carriers generated in the photoelectric conversion portion; and a carrier discharging control portion for discharging charge carriers in the photoelectric conversion portion to an OFD region, and having a carrier path between the photoelectric conversion portion and the first carrier holding portion, in which the solid-state imaging apparatus further includes a second carrier holding portion electrically connected with the first carrier portion in parallel through a first transfer unit, when viewed from an output node of the photoelectric conversion portion, thereby smoothing an movie imaging without causing discontinuous frame while suppressing generation of noise mixing into the charge carrier holding portion.

摘要翻译： 一种固态成像装置，包括多个像素，每个像素包括：第一保持部分，用于保持来自光电转换部分的信号载流子; 放大部分，用于基于在光电转换部分中产生的信号载波放大和读取信号; 以及用于将光电转换部分中的载流子放电到OFD区域的载流子放电控制部分，并且在光电转换部分和第一载流子保持部分之间具有载流子路径，其中固态成像装置还包括第二载体 保持部分，当从光电转换部分的输出节点观察时，通过第一传送单元并联地与第一载体部分电连接，从而平滑电影成像而不引起不连续帧，同时抑制噪声混合到电荷载体保持部分的产生 。

公开(公告)号：US08823125B2

公开(公告)日：2014-09-02

申请号：US13500064

申请日：2010-10-06

申请人： Yusuke Onuki ,  Yuichiro Yamashita ,  Masahiro Kobayashi

发明人： Yusuke Onuki ,  Yuichiro Yamashita ,  Masahiro Kobayashi

IPC分类号： H01L27/146 ,  H01L31/06 ,  H01L31/102 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14643 ,  H01L27/14609 ,  H01L27/14689

摘要： A solid-state image pickup device includes a photoelectric conversion portion, a charge holding portion configured to include a first-conductivity-type first semiconductor region, and a transfer portion configured to include a transfer gate electrode that controls a potential between the charge holding portion and a sense node. The charge holding portion includes a control electrode. A second-conductivity-type second semiconductor region is disposed on a surface of a semiconductor region between the control electrode and the transfer gate electrode. A first-conductivity-type third semiconductor region is disposed under the second semiconductor region. The third semiconductor region is disposed at a deeper position than the first semiconductor region.

摘要翻译： 固体摄像装置包括：光电转换部，电荷保持部，被配置为包括第一导电型第一半导体区;以及转印部，其被配置为包括转印栅极电极，其控制电荷保持部分 和感知节点。 电荷保持部分包括控制电极。 第二导电型第二半导体区域设置在控制电极和传输栅电极之间的半导体区域的表面上。 第一导电类型的第三半导体区域设置在第二半导体区域的下方。 第三半导体区域设置在比第一半导体区域更深的位置。