摘要:
An accelerator capable of detecting a turning angle of an accelerator pedal with high accuracy includes a bearing part, an urging part, an accelerator pedal, a stopper, and a turning angle sensor. The accelerator pedal has a turning shaft supported by the bearing part and is turned forward when a depressing force is applied thereto and is turned reversely when the urging force of the urging part is applied thereto. The stopper abuts against the accelerator pedal to limit the reverse turn of the accelerator pedal and substantially simultaneously guides the accelerator pedal in a direction equivalent to that which the urging force is applied. The turning angle sensor detects the turning angle of the accelerator pedal.
摘要:
A pedal module includes a double coil spring, a pedal, and a damping part. The double coil spring includes an outside coil and an inside coil. The pedal turns in a forward direction when a depressing force is applied thereto and turns in a reverse direction when a restoring force of the double coil spring is applied thereto. The damping part has an inserting portion disposed between the outside coil and the inside coil. The inserting portion includes a middle portion and a first side end portion disposed relative to each other in a width direction that corresponds to a circumferential direction of the double coil spring. The middle portion crosses a radial axis of the double coil spring and protrudes beyond the first side end portion toward an axial end of the double coil spring.
摘要:
An accelerator capable of detecting a turning angle of an accelerator pedal with high accuracy includes a bearing part, an urging part, an accelerator pedal, a stopper, and a turning angle sensor. The accelerator pedal has a turning shaft supported by the bearing part and is turned forward when a depressing force is applied thereto and is turned reversely when the urging force of the urging part is applied thereto. The stopper abuts against the accelerator pedal to limit the reverse turn of the accelerator pedal and substantially simultaneously guides the accelerator pedal in a direction equivalent to that which the urging force is applied. The turning angle sensor detects the turning angle of the accelerator pedal.
摘要:
A pedal module includes a double coil spring, a pedal, and a damping part. The double coil spring includes an outside coil and an inside coil. The pedal turns in a forward direction when a depressing force is applied thereto and turns in a reverse direction when a restoring force of the double coil spring is applied thereto. The damping part has an inserting portion disposed between the outside coil and the inside coil. The inserting portion includes a middle portion and a first side end portion disposed relative to each other in a width direction that corresponds to a circumferential direction of the double coil spring. The middle portion crosses a radial axis of the double coil spring and protrudes beyond the first side end portion toward an axial end of the double coil spring.
摘要:
A rotation angle detector for improving the detection accuracy of a rotation angle has a movable shaft, a bearing portion for pivotably bearing against the movable shaft, a detection portion for detecting a rotation angle of the movable shaft, and a supporting portion for supporting the detection portion. The bearing portion and the supporting portion are integrally formed of the same material. As a result, since the bearing portion and the supporting portion are accurately aligned with each other, displacement of the movable shaft with respect to the detection portion can be prevented. Thus, the detection accuracy of the movable shaft rotation angle can be improved.
摘要:
A power semiconductor module is provided which is capable of keeping low the degrees of increases in temperatures of wide bandgap semiconductor elements, reducing the degree of increase in chip's total surface area of the wide bandgap semiconductor elements, and being fabricated at low costs, when Si semiconductor elements and the wide bandgap semiconductor elements are placed within one and the same power semiconductor module. The Si semiconductor elements are placed in a central region of the power semiconductor module, and the wide bandgap semiconductor elements are placed on opposite sides relative to the central region or in edge regions surrounding the central region.
摘要:
An insulated gate semiconductor device, includes an isolating structure shaped in a circulating section along the periphery of a semiconductor substrate so as to isolate that part from an inside device region, a peripheral diffusion region of the semiconductor substrate located outside the isolating structure, a plurality of cell structures defined in the device region and divided in segments by insulated trench-shaped gates so as to have a base region covered with an emitter region in its upper surface, a collector region, and an emitter electrode electrically connected to the emitter region and the base region, a dummy base region contiguous to the cell structures and configured as a base region that has its upper surface left without the emitter region connected to the emitter electrode, and a connection part to electrically connect the peripheral diffusion region to the emitter electrode.
摘要:
In an idle speed control valve, an adjusting screw is inserted into a hole of a valve body and passes through a center of a coil provided in the valve body. The adjusting screw has a ring-shaped flexible projection on its outer periphery between a head portion and a threaded portion thereof to prevent a sealing material from entering. An outer diameter of the projection is equal to or slightly larger than an inner diameter of the hole. Therefore, when the adjusting screw is inserted into the hole, a peak of the projection contacts an inner wall of the hole. The projection may be integrally molded with the adjusting screw. A ring-shaped projection may be provided on a thin wall portion of the adjusting screw.
摘要:
A semiconductor device such as an IGBT having trench gates in a form of stripes, and manufacturing method, wherein concentration of stresses in only a single direction is relieved and the generation of a leakage current and crystal defects in the IGBT is prevented. In one embodiment, the inside of a terminal area of an IGBT is divided into a single gate pad area and plural element areas by a wiring area. The respective element areas are arranged in such a manner that the directions of trench gates formed in the respective element areas cross at right angles with respect to the directions of trench gates of respective adjacent element areas.