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    Semiconductor device and manufacturing method thereof
    2.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US09252279B2

    公开(公告)日：2016-02-02

    申请号：US13592870

    申请日：2012-08-23

    申请人： Masahiro Watanabe ,  Mitsuo Mashiyama ,  Takuya Handa ,  Kenichi Okazaki

    发明人： Masahiro Watanabe ,  Mitsuo Mashiyama ,  Takuya Handa ,  Kenichi Okazaki

    IPC分类号： H01L29/786

    CPC分类号： H01L29/7869 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/78606

    摘要： To provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and has high reliability. To provide a method for manufacturing the semiconductor device. The semiconductor device includes a gate electrode, a gate insulating film formed over the gate electrode, an oxide semiconductor film formed over the gate insulating film, a source electrode and a drain electrode formed over the oxide semiconductor film, and a protective film. The protective film includes a metal oxide film, and the metal oxide film has a film density of higher than or equal to 3.2 g/cm3.

    摘要翻译： 提供一种具有稳定的电特性并具有高可靠性的氧化物半导体的半导体装置。 提供制造半导体器件的方法。 半导体器件包括栅电极，形成在栅电极上的栅极绝缘膜，形成在栅极绝缘膜上的氧化物半导体膜，形成在氧化物半导体膜上的源电极和漏电极以及保护膜。 保护膜包括金属氧化物膜，并且金属氧化物膜具有高于或等于3.2g / cm 3的膜密度。

    Semiconductor device
    7.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US09614095B2

    公开(公告)日：2017-04-04

    申请号：US13568451

    申请日：2012-08-07

    申请人： Kenichi Okazaki ,  Masahiro Watanabe ,  Mitsuo Mashiyama

    发明人： Kenichi Okazaki ,  Masahiro Watanabe ,  Mitsuo Mashiyama

    IPC分类号： H01L29/78 ,  H01L29/786

    CPC分类号： H01L29/7869

    摘要： An oxide semiconductor transistor comprising an oxide semiconductor layer with high conductivity is provided. A semiconductor device including an oxide semiconductor layer comprising an oxide containing indium, gallium, and zinc (IGZO) and a particle of indium oxide; a gate electrode overlapping with a channel formation region in the oxide semiconductor layer with a gate insulating film interposed therebetween; and a source electrode and a drain electrode overlapping with a source region and a drain region in the oxide semiconductor layer. The semiconductor device may be a top-gate oxide semiconductor transistor or a bottom-gate oxide semiconductor transistor. The oxide semiconductor layer may be formed over or below the source electrode and the drain electrode.

    Semiconductor device and method for manufacturing the same
    8.
    发明授权
    Semiconductor device and method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US09064853B2

    公开(公告)日：2015-06-23

    申请号：US13572847

    申请日：2012-08-13

    申请人： Masafumi Nomura ,  Kenichi Okazaki ,  Toshiyuki Miyamoto ,  Takashi Hamochi ,  Shunpei Yamazaki

    发明人： Masafumi Nomura ,  Kenichi Okazaki ,  Toshiyuki Miyamoto ,  Takashi Hamochi ,  Shunpei Yamazaki

    IPC分类号： H01L27/12 ,  H01L29/12 ,  H01L29/49 ,  H01L29/786 ,  H01L29/66

    CPC分类号： H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78693

    摘要： A semiconductor device including an oxide semiconductor and including a more excellent gate insulating film is provided. A highly reliable and electrically stable semiconductor device having a small number of changes in the film structure, the process conditions, the manufacturing apparatus, or the like from a mass production technology that has been put into practical use is provided. A method for manufacturing the semiconductor device is provided. The semiconductor device includes a gate electrode, a gate insulating film formed over the gate electrode, and an oxide semiconductor film formed over the gate insulating film. The gate insulating film includes a silicon nitride oxide film, a silicon oxynitride film formed over the silicon nitride oxide film, and a metal oxide film formed over the silicon oxynitride film. The oxide semiconductor film is formed over and in contact with the metal oxide film.

    摘要翻译： 提供了包括氧化物半导体并且包括更优异的栅极绝缘膜的半导体器件。 本发明提供了一种从投入实际使用的大规模生产技术的膜结构，工艺条件，制造装置等的变化少的高可靠性和电稳定性的半导体装置。 提供一种半导体器件的制造方法。 半导体器件包括形成在栅电极上的栅电极，栅绝缘膜和形成在栅极绝缘膜上的氧化物半导体膜。 栅极绝缘膜包括在氮氧化硅膜上形成的氮氧化硅膜，氧氮化硅膜和在氧氮化硅膜上形成的金属氧化物膜。 氧化物半导体膜形成在金属氧化物膜上并与其接触。

    Roaming-service-enabling system, roaming-service-enabling method and roaming-service-enabling program
    10.
    发明授权
    Roaming-service-enabling system, roaming-service-enabling method and roaming-service-enabling program 失效
    漫游服务启用系统，漫游服务启用方式和漫游服务启用程序

    公开(公告)号：US07835735B2

    公开(公告)日：2010-11-16

    申请号：US10853506

    申请日：2004-05-26

    申请人： Kenichi Okazaki

    发明人： Kenichi Okazaki

    IPC分类号： H04W4/00

    CPC分类号： H04L65/605 ,  H04L12/2856 ,  H04L29/06027 ,  H04L51/066 ,  H04L51/38 ,  H04L67/28 ,  H04L67/2823 ,  H04L67/303 ,  H04L69/08 ,  H04W4/00 ,  H04W8/02 ,  H04W8/18 ,  H04W40/02 ,  H04W88/14

    摘要： A roaming-service-enabling system is provided which enables a user to gain access to desired contents and/or to be provided with desired service from any kind of internet connecting device. An SRF (Service Roaming Framework) server has a network controlling unit, subscriber profile storing unit, and subscriber authenticating unit. The subscriber profile storing unit stores information about a type of an access terminal that a user is able to use and subscriber profile information used to identify an access unit corresponding to the access terminal. The network controlling unit transmits data fed from a service providing server to the access terminal by making the data be matched to the type of the access terminal and access unit according to subscriber profile information being stored by the subscriber profile storing unit.

    摘要翻译： 提供漫游服务使能系统，其使得用户能够从任何种类的互联网连接设备获得对期望内容的访问和/或提供期望的服务。 SRF（服务漫游框架）服务器具有网络控制单元，用户简档存储单元和用户认证单元。 订户简档存储单元存储关于用户能够使用的接入终端的类型的信息和用于标识对应于接入终端的接入单元的用户简档信息。 网络控制单元根据由用户简档存储单元存储的用户简档信息，通过使数据与接入终端和接入单元的类型匹配，将从服务提供服务器馈送的数据发送到接入终端。