公开(公告)号：US5210840A

公开(公告)日：1993-05-11

申请号：US412504

申请日：1989-09-26

申请人： Masakazu Fukagawa ,  Yasuhiko Hatakeyama ,  Toshiyuki Kinoshita ,  Toshiaki Arai

发明人： Masakazu Fukagawa ,  Yasuhiko Hatakeyama ,  Toshiyuki Kinoshita ,  Toshiaki Arai

IPC分类号： G06F12/10 ,  G06F9/355 ,  G06F12/02

CPC分类号： G06F9/342 ,  G06F12/0292

摘要： In a disclosed embodiment of the address space control apparatus, each general-purpose register usable as a base register is associated with another general-purpose register in addition to an access register containing a segment table origin. When a general-purpose register is selected as a base register, the contents of its associated general-purpose register are read out and added to the segment table origin from the associated access register to provide an effective segment table origin. In a modification, the access registers are omitted, and the general-purpose register selected as a base register are used to select an entry in a register or register array containing segment table origins in respective entries. In other embodiments disclosed, general-purpose registers are used in different manners to enhance virtual address space control functions.

摘要翻译： 在公开的地址空间控制装置的实施例中，除了包含段表原点的访问寄存器之外，可用作基址寄存器的每个通用寄存器与另一通用寄存器相关联。 当选择通用寄存器作为基址寄存器时，将相关联的通用寄存器的内容从相关的访问寄存器读出并添加到段表原点，以提供有效的段表原点。 在修改中，省略了访问寄存器，并且将用作基址寄存器的通用寄存器用于在相应条目中包含段表起始的寄存器或寄存器阵列中选择条目。 在所公开的其他实施例中，以不同的方式使用通用寄存器来增强虚拟地址空间控制功能。

公开(公告)号：US4703422A

公开(公告)日：1987-10-27

申请号：US687160

申请日：1984-12-28

申请人： Toshiyuki Kinoshita ,  Toshiaki Arai ,  Takao Sato ,  Takashige Kubo ,  Yasufumi Yoshizawa ,  Hiromichi Mori

发明人： Toshiyuki Kinoshita ,  Toshiaki Arai ,  Takao Sato ,  Takashige Kubo ,  Yasufumi Yoshizawa ,  Hiromichi Mori

IPC分类号： G06F12/08 ,  G06F9/50 ,  G06F12/12 ,  G06F13/00

CPC分类号： G06F9/5016 ,  G06F12/122

摘要： In a memory hierarchy system having two or more hierarchy storages of different access speeds and programs and/or data to be loaded on the hierarchy storages, an activity information acquisition unit and a display unit are provided to present information regarding selection of programs and/or data to be loaded on a higher level in memory hierarchy, a unit is provided which automatically decides loading of the programs and/or data on the higher level and executes reallocation of the programs and/or data on the basis of the information, and a unit is provided which permits the user to change the loading by using a user command. The user can make full use of these units during execution of the memory hierarchy control. In an embodiment, priority for the programs and/or data to be loaded on the higher level is calculated and decided. The programs and/or data are written into the real storage in accordance with their priority to increase the real storage hit rate upon occurrence of a next request for loading.

摘要翻译： 在具有不同访问速度的两个或多个层次存储器和要加载在层级存储器上的程序和/或数据的存储器层次系统中，提供活动信息获取单元和显示单元以呈现关于程序选择和/或 要在存储器层级中的较高级别上加载的数据，提供了一个单元，其自动地决定上级程序和/或数据的加载，并且基于该信息执行程序和/或数据的重新分配，并且 提供了允许用户通过使用用户命令改变负载的单元。 用户可以在执行存储器层级控制时充分利用这些单元。 在一个实施例中，计算并确定要在较高级上加载的程序和/或数据的优先级。 根据其优先级将程序和/或数据写入真实存储器，以在下一次加载请求发生时增加真实的存储命中率。

公开(公告)号：US4991082A

公开(公告)日：1991-02-05

申请号：US924028

申请日：1986-10-28

申请人： Yasufumi Yoshizawa ,  Taketoshi Sakuraba ,  Toshiaki Arai ,  Toshiyuki Kinoshita ,  Minoru Shibamiya ,  Takashige Kubo

发明人： Yasufumi Yoshizawa ,  Taketoshi Sakuraba ,  Toshiaki Arai ,  Toshiyuki Kinoshita ,  Minoru Shibamiya ,  Takashige Kubo

IPC分类号： G06F12/10

CPC分类号： G06F12/109 ,  G06F2212/656

摘要： An area boundary between a system common area and a job private area is set at any page boundary independently from a segment boundary, and for the segment (boundary segment) containing the area boundary, a page table is prepared for each virtual address space. Thus, virtual pages which are not used as the system common area in the bondary segment can be used by jobs as job private areas.The real page is fixedly allocated to the virtual page belonging to the system common area in the boundary segment. Thus, it is not necessary to simultaneously update page tables for the system common area. Those virtual pages may be subjects of dynamic allocation of the virtual storage.

摘要翻译： 系统公共区域和作业专用区域之间的区域边界被设置在独立于段边界的任何页边界处，并且对于包含区域边界的段（边界段），为每个虚拟地址空间准备页表。 因此，不用作债券部门中的系统公共区域的虚拟页面可以由作为作业私人区域的作业使用。 真实页面被固定地分配给属于边界段中的系统公共区域的虚拟页面。 因此，不需要同时更新系统公共区域的页表。 这些虚拟页面可以是虚拟存储器的动态分配的主题。

公开(公告)号：US08738267B2

公开(公告)日：2014-05-27

申请号：US12761815

申请日：2010-04-16

申请人： Toshiaki Arai ,  Tadayoshi Okada

发明人： Toshiaki Arai ,  Tadayoshi Okada

IPC分类号： G06F7/00

CPC分类号： B60W40/072 ,  B60W30/17 ,  B60W40/076 ,  B60W2520/10 ,  B60W2520/105 ,  B60W2550/142 ,  B60W2750/308

摘要： A vehicular travel control device according to the invention includes an inter-vehicle distance measuring section that is mounted on a subject vehicle and measures an inter-vehicle distance between the subject vehicle and a preceding vehicle, a target inter-vehicle distance setting section that sets a target inter-vehicle distance, a following travel control section that performs a travel control so as to make the inter-vehicle distance become equal to the target inter-vehicle distance and stops the subject vehicle while following a stopping of the preceding vehicle, a gradient acquiring section that acquires a gradient of a road being traveled of the subject vehicle, and a vehicle speed sensor that measures a travel speed of the subject vehicle. The target inter-vehicle distance setting section sets the target inter-vehicle distance based on the gradient and the travel speed.

摘要翻译： 根据本发明的车辆行驶控制装置包括：车辆间距离测量部，其安装在本车辆上并测量本车与前方车辆之间的车辆间距离;车辆间距离设定部，其设定 目标车辆间距离，后续行驶控制部，其执行行驶控制，以使车辆间距离变得等于目标车辆间距离，并且在跟随前方车辆停止时停止本车辆; 梯度获取部分，其获取被检测车辆行驶的道路的坡度;以及车速传感器，其测量本车辆的行驶速度。 目标车间距离设定部根据坡度和行驶速度来设定目标车间距离。

公开(公告)号：US20120324039A1

公开(公告)日：2012-12-20

申请号：US13486530

申请日：2012-06-01

申请人： Ryo Hirana ,  Keisuke Hatasaki ,  Toshiaki Arai

发明人： Ryo Hirana ,  Keisuke Hatasaki ,  Toshiaki Arai

IPC分类号： G06F15/167

CPC分类号： G06F3/0604 ,  G06F3/0631 ,  G06F3/0664 ,  G06F3/067 ,  G06F9/5077

摘要： A first server including a local disk and a second server are logically partitioned by virtualization units. The first and second servers each have a storage controller LPAR with a local disk sharing function running thereon. The storage controller LPARs running on the first and second servers communicate with each other. When a disk I/O command issued by the second LPAR running on the second server is transferred to the local disk of the first server, the second LPAR reads data stored in the local disk or writes data thereto. In this way, the local disk is shared.

摘要翻译： 包括本地磁盘和第二个服务器在内的第一台服务器由虚拟化单元进行逻辑分区。 第一和第二服务器各自具有在其上运行的本地磁盘共享功能的存储控制器LPAR。 在第一和第二服务器上运行的存储控制器LPAR彼此通信。 当由在第二服务器上运行的第二LPAR发出的磁盘I / O命令被传送到第一服务器的本地磁盘时，第二LPAR读取存储在本地磁盘中的数据或向其写入数据。 这样，本地磁盘是共享的。

公开(公告)号：US20120211755A1

公开(公告)日：2012-08-23

申请号：US13365780

申请日：2012-02-03

申请人： Takashige Fujimori ,  Toshiaki Arai

发明人： Takashige Fujimori ,  Toshiaki Arai

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78606

摘要： Disclosed herein is a manufacturing method of a thin film transistor including: forming a channel layer made of an oxide semiconductor above a gate electrode with a gate insulating film provided therebetween, forming a channel protection film made of a conductive material adapted to cover the channel layer and forming a pair of source and drain electrodes in such a manner as to be in contact with the channel protection film; and removing the region of the channel protection film between the source/drain electrodes by etching relying on selectivity between the conductive material and crystalline oxide semiconductor.

摘要翻译： 本发明公开了一种薄膜晶体管的制造方法，包括：在栅电极之上形成由氧化物半导体构成的沟道层，其间设置有栅极绝缘膜，形成由适于覆盖沟道层的导电材料制成的沟道保护膜 以及与沟道保护膜接触的方式形成一对源电极和漏电极; 并且通过依赖于导电材料和结晶氧化物半导体之间的选择性的蚀刻去除源/漏电极之间的沟道保护膜的区域。

公开(公告)号：US08222643B2

公开(公告)日：2012-07-17

申请号：US12603049

申请日：2009-10-21

申请人： Toshiaki Arai ,  Yoshio Inagaki

发明人： Toshiaki Arai ,  Yoshio Inagaki

IPC分类号： H01L29/04 ,  H01L31/20

CPC分类号： H01L29/66765 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02675 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/78678

摘要： A thin film transistor having a crystalline silicon film that is formed over an insulating substrate with a gate electrode and a gate insulating film in between, and has a channel region in a region corresponding to the gate electrode; an insulating channel protective film that is selectively formed in a region corresponding to the channel region on the crystalline silicon film; an n+ silicon film having a source region and a drain region that sandwich a region corresponding to the channel region on the channel protective film and the crystalline silicon film; and a metal film having a source electrode and a drain electrode that respectively correspond to the source region and the drain region.

摘要翻译： 一种具有晶体硅膜的薄膜晶体管，其在绝缘基板上形成有栅电极和栅极绝缘膜，并且在对应于栅电极的区域中具有沟道区域; 绝缘通道保护膜，其选择性地形成在与晶体硅膜上的沟道区对应的区域中; 具有源极区域和漏极区域的n +硅膜，其夹着与沟道保护膜上的沟道区域对应的区域和晶体硅膜; 以及具有分别对应于源极区域和漏极区域的源极电极和漏极电极的金属膜。

公开(公告)号：US20120046844A1

公开(公告)日：2012-02-23

申请号：US13257223

申请日：2010-05-14

申请人： Tadayoshi Okada ,  Toshiaki Arai

发明人： Tadayoshi Okada ,  Toshiaki Arai

IPC分类号： B60W30/18 ,  B60W10/18 ,  B60W10/04

CPC分类号： B60W30/18018 ,  B60T7/122 ,  B60T7/22 ,  B60W10/06 ,  B60W10/184 ,  B60W30/18027 ,  B60W30/18063 ,  B60W30/18118 ,  B60W2550/142 ,  B60W2710/105

摘要： When a start-up operation by a driver is detected while a vehicle is maintained at a stopped state, a target driving force for suppressing the movement of the vehicle on the road to be driven is calculated, based on the grade obtained regarding the road to be driven on. After the vehicle is driven by the target driving force, the braking force is released so as to terminate the maintaining of the stopped state of the vehicle. Preferably, the state of being driven by the target driving force is maintained until the releasing of the braking force is completed. When the releasing of the braking force is completed, the driving force is increased to start-up the vehicle. With such a start-up control, vehicles are prevented from moving temporarily in a direction opposite from the traveling direction, and a smooth star-up can be achieved.

摘要翻译： 当车辆维持在停止状态时，当检测到驾驶员的起动操作时，根据获得的关于道路的等级来计算用于抑制待行驶的道路上的车辆的移动的目标驱动力 被驱赶。 在车辆被目标驱动力驱动之后，释放制动力，以终止车辆的停止状态的维持。 优选地，保持由目标驱动力驱动的状态，直到制动力的释放完成。 当制动力的释放完成时，驱动力增加以启动车辆。 通过这种启动控制，防止车辆沿与行进方向相反的方向临时移动，并且可以实现平稳的起落。

公开(公告)号：US20120043548A1

公开(公告)日：2012-02-23

申请号：US13287689

申请日：2011-11-02

申请人： Toshiaki Arai ,  Narihiro Morosawa ,  Kazuhiko Tokunaga ,  Hiroshi Sagawa ,  Kiwamu Miura

发明人： Toshiaki Arai ,  Narihiro Morosawa ,  Kazuhiko Tokunaga ,  Hiroshi Sagawa ,  Kiwamu Miura

IPC分类号： H01L29/786

CPC分类号： H01L27/3262 ,  H01L27/1225 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L2251/5315

摘要： A thin film transistor with which oxygen is easily supplied to an oxide semiconductor layer and favorable transistor characteristics are able to be restored and a display unit including the same. The thin film transistor includes, sequentially over a substrate, a gate electrode, a gate insulting film, an oxide semiconductor layer including a channel region, and a channel protective layer covering the channel region A source electrode and a drain electrode are formed on the oxide semiconductor layer located on both sides of the channel protective layer, and at least one of the source electrode and the drain electrode has an aperture to expose the oxide semiconductor layer.

摘要翻译： 能够使能够容易地供给氧化物半导体层的氧和良好的晶体管特性的薄膜晶体管能够恢复，并且包括该薄膜晶体管的显示单元。 薄膜晶体管在基板上顺序地包括栅电极，栅极绝缘膜，包括沟道区的氧化物半导体层，以及覆盖沟道区A的沟道保护层。源极和漏电极形成在氧化物 位于沟道保护层两侧的半导体层，源电极和漏电极中的至少一个具有露出氧化物半导体层的孔。

公开(公告)号：US07955916B2

公开(公告)日：2011-06-07

申请号：US12121398

申请日：2008-05-15

申请人： Naoki Hayashi ,  Toshiaki Arai

发明人： Naoki Hayashi ,  Toshiaki Arai

IPC分类号： H01L21/84 ,  H01L21/336 ,  H01L29/786

CPC分类号： H01L29/66765 ,  H01L27/1285 ,  H01L27/3244 ,  H01L29/4908

摘要： A method for making a semiconductor apparatus including the steps of: forming a laminate structure of an insulating film made of a metal oxide and a semiconductor thin film on a substrate; forming a light absorption layer on top of the laminate structure; and irradiating an energy beam of a wavelength capable of being absorbed by the light absorption layer on the light absorption layer and simultaneously crystallizing the insulating film and the semiconductor thin film by means of heat generated in the light absorption layer.

摘要翻译： 一种制造半导体装置的方法，包括以下步骤：在基板上形成由金属氧化物和半导体薄膜构成的绝缘膜的叠层结构; 在层叠结构的顶部形成光吸收层; 并且将能够被光吸收层吸收的波长的能量束照射在光吸收层上，同时通过在光吸收层中产生的热而使绝缘膜和半导体薄膜结晶。