公开(公告)号：US20070001593A1

公开(公告)日：2007-01-04

申请号：US11472397

申请日：2006-06-22

申请人： Masakazu Sagawa ,  Hiroshi Kikuchi ,  Yukio Takasaki ,  Tomoki Nakamura ,  Toshiaki Kusunoki ,  Kazutaka Tsuji

发明人： Masakazu Sagawa ,  Hiroshi Kikuchi ,  Yukio Takasaki ,  Tomoki Nakamura ,  Toshiaki Kusunoki ,  Kazutaka Tsuji

IPC分类号： H01J1/62

CPC分类号： H01J1/72 ,  H01J9/02 ,  H01J29/04 ,  H01J31/127

摘要： The present invention provides an image display device, in which a top electrode is selectively separated by laser ablation for each scan line. As the laser, a third harmonic wave of YAG laser with a wavelength of 355 nm is used. By setting film thickness of the interlayer insulator 15 to 100 nm and film thickness of a field insulator 14 to 140 nm, reflective spectrum has the minimum value near a wavelength of 355 nm, This laser beam is projected from a top electrode 13 toward a substrate 10. A part of the projected laser beam 20 is reflected by the top electrode 13, but most of the laser beam pass through a field insulator 14 and the interlayer insulator 15 and is reflected by a bottom electrode 11. As the result of interference of these two reflection waves, the minimum value appears in reflection spectrum. In this case, the laser beam is mostly absorbed near boundary surface between the top electrode 13 and the interlayer insulator 15. The top electrode 13 is processed by ablation (melting and evaporation), and the top electrode 13 is separated at this portion. By utilizing interference phenomenon in this manner, no damage is given to the interlayer insulator 13, the field insulator 14, and the bottom electrode 11, which serve as underlying layers, and the top electrode 13 can be selectively cut off.

摘要翻译： 本发明提供一种图像显示装置，其中通过每个扫描线的激光烧蚀选择性地分离顶部电极。 作为激光器，使用波长为355nm的YAG激光器的三次谐波。 通过将层间绝缘体15的膜厚设定为100nm，将场绝缘体14的膜厚设定为140nm，反射光的波长为355nm附近的最小值。该激光从顶部电极13朝向基板 10。 投射的激光束20的一部分被顶部电极13反射，但大多数激光束通过场绝缘体14和层间绝缘体15并由底部电极11反射。 作为这两个反射波的干扰的结果，最小值出现在反射光谱中。 在这种情况下，激光束主要在顶部电极13和层间绝缘体15之间的边界面附近被吸收。 顶部电极13通过消融（熔化和蒸发）进行处理，顶部电极13在该部分分离。 通过以这种方式利用干涉现象，不会对作为下层的层间绝缘体13，场绝缘体14和底电极11以及顶电极13进行选择性地切断。

公开(公告)号：US20060087218A1

公开(公告)日：2006-04-27

申请号：US11252794

申请日：2005-10-19

申请人： Yoshiro Mikami ,  Yukio Takasaki ,  Masahiro Tanaka ,  Masakazu Sagawa

发明人： Yoshiro Mikami ,  Yukio Takasaki ,  Masahiro Tanaka ,  Masakazu Sagawa

IPC分类号： H01J63/04 ,  H01J1/62

CPC分类号： H01J29/96 ,  H01J9/241 ,  H01J31/127

摘要： Both a display device for displaying a uniform image on the front surface of a FED panel, and a method for manufacturing the same are disclosed. The display device includes a glass substrate which forms thereon signal wirings and MIM elements connected to thin-film scanning wirings, and an opposed substrate which forms thereon phosphor layers for performing light emissions by electron beams from the MIM elements. In the display device and the method for manufacturing the same, low-resistance wiring patterns formed separately on a film substrate are transferred onto the thin-film scanning wirings and upper electrodes. This transfer allows low-resistance scanning-wiring buses to be fixedly bonded thereon by electrically-conductive adhesive layers.

摘要翻译： 公开了一种用于在FED面板的前表面上显示均匀图像的显示装置及其制造方法。 显示装置包括在其上形成信号布线的玻璃基板和连接到薄膜扫描布线的MIM元件，以及在其上形成荧光体层的相对基板，用于通过来自MIM元件的电子束进行发光。 在显示装置及其制造方法中，在薄膜基板上分别形成的低电阻布线图案被转印到薄膜扫描布线和上电极上。 该传输允许低电阻扫描线总线通过导电粘合剂层固定在其上。

公开(公告)号：US5101255A

公开(公告)日：1992-03-31

申请号：US384080

申请日：1989-07-24

申请人： Sachio Ishioka ,  Yukio Takasaki ,  Tadaaki Hirai ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Yasuhiko Nonaka ,  Tatsuro Kawamura ,  Takashi Yamashita ,  Kazuhisa Taketoshi ,  Keiichi Shidara ,  Fumihiko Ando ,  Kenkichi Tanioka

发明人： Sachio Ishioka ,  Yukio Takasaki ,  Tadaaki Hirai ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Yasuhiko Nonaka ,  Tatsuro Kawamura ,  Takashi Yamashita ,  Kazuhisa Taketoshi ,  Keiichi Shidara ,  Fumihiko Ando ,  Kenkichi Tanioka

IPC分类号： H01L31/0272 ,  H01L31/09

CPC分类号： H01L31/0272 ,  H01L31/095

摘要： Disclosed is a photoelectric conversion device which comprises: a photoconductive layer made of amorphous semiconductor material which shows charge multiplication and which converts photo signals into electric signals; and a substrate having electric circuits or the like (for example switching elements) for reading the electric signals. The amorphous semiconductor material used according to the invention shows the charge multiplication action under predetermined intensity of electric field so that a high sensitive photoelectric conversion device having a gain which is not smaller than 1 is realized.

摘要翻译： 公开了一种光电转换装置，其包括：由非晶半导体材料制成的光电导层，其显示电荷倍增，并将光信号转换为电信号; 以及具有用于读取电信号的电路等的基板（例如开关元件）。 根据本发明使用的非晶半导体材料在预定的电场强度下显示充电倍增动作，从而实现具有不小于1的增益的高灵敏度光电转换装置。

公开(公告)号：US4829345A

公开(公告)日：1989-05-09

申请号：US857089

申请日：1986-04-29

申请人： Sachio Ishioka ,  Kazutaka Tsuji ,  Yukio Takasaki ,  Yasuharu Shimomoto ,  Hirokazu Matsubara ,  Tadaaki Hirai

发明人： Sachio Ishioka ,  Kazutaka Tsuji ,  Yukio Takasaki ,  Yasuharu Shimomoto ,  Hirokazu Matsubara ,  Tadaaki Hirai

IPC分类号： H01L27/00 ,  G02B6/12 ,  G02B6/43 ,  H01L27/15 ,  H01L31/12

CPC分类号： H04B10/801 ,  G02B6/12002 ,  G02B6/43 ,  H01L31/12

摘要： Within an electronic device having a plurality of circuit parts (such as a three-dimensional device), a light transmission system which transfers signals between the circuit parts by the use of light is provided.The light transmission system is formed of a light emitting source which emits light having a desired wavelength, a photoelectric conversion portion which absorbs the light and converts it into an electric signal, and a light traveling path which conveys the light emitted from the light emitting source to the photoelectric conversion portion.Further, each of the light emitting source, the light traveling path and the photoelectric conversion portion is formed of a superlattice structure in which a plurality of materials of unequal energy gaps are layered.

摘要翻译： 在具有多个电路部分（例如三维装置）的电子装置中，提供了通过使用光在电路部分之间传送信号的光传输系统。 光传输系统由发射具有期望波长的光的发光源，吸收光并将其转换为电信号的光电转换部分和从发光源发射的光传输的光行进路径 到光电转换部分。 此外，发光源，光行进路径和光电转换部分中的每一个由层叠不同能隙的多种材料的超晶格结构形成。

公开(公告)号：US20080272685A1

公开(公告)日：2008-11-06

申请号：US12081738

申请日：2008-04-21

申请人： Mitsuharu Ikeda ,  Toshiaki Kusunoki ,  Etsuko Nishimura ,  Tatsumi Hirano ,  Masatomo Terakado ,  Takahiro Ueno ,  Hiroyasu Yanase ,  Yukio Takasaki ,  Takaaki Ogasa ,  Hideyuki Shintani

发明人： Mitsuharu Ikeda ,  Toshiaki Kusunoki ,  Etsuko Nishimura ,  Tatsumi Hirano ,  Masatomo Terakado ,  Takahiro Ueno ,  Hiroyasu Yanase ,  Yukio Takasaki ,  Takaaki Ogasa ,  Hideyuki Shintani

IPC分类号： H01J1/54 ,  H05K1/09

CPC分类号： G02F1/136286 ,  G02F2001/13629

摘要： Hillock is prevented when aluminum wiring is used in order to reduce line resistance in a display unit. The aluminum wiring is formed into multi-layer structure and each layer contains an element which is not solidly solubilized with aluminum. The element are preferably rare earth metal such as Nd, high-melting point transition metals such as Ta and noble metals such as Pd. Intermetallic compounds of aluminum and the element are educed at an interface of the multi-layer wiring and it is prevented that grains of aluminum are enlarged to form hillock.

摘要翻译： 为了减少显示单元中的线路电阻，使用铝接线时会阻止小丘。 铝布线形成多层结构，每一层都含有不能用铝固溶的元素。 该元素优选为稀土金属如Nd，高熔点过渡金属如Ta和贵金属如Pd。 铝和元素的金属间化合物在多层布线的界面处被引出，并且防止铝的晶粒扩大以形成小丘。

公开(公告)号：US4952839A

公开(公告)日：1990-08-28

申请号：US420773

申请日：1989-10-12

申请人： Kenkichi Tanioka ,  Mitsuo Kosugi ,  Junichi Yamazaki ,  Keiichi Shidara ,  Kazuhisa Taketoshi ,  Tatsuro Kawamura ,  Eikyuu Hiruma ,  Shiro Suzuki ,  Takashi Yamashita ,  Masaaki Aiba ,  Yochizumi Ikeda ,  Tadaaki Hirai ,  Yukio Takasaki ,  Sachio Ishioka ,  Tatsuo Makishima ,  Kenji Sameshima ,  Tsuyoshi Uda ,  Naohiro Goto ,  Yasuhiko Nonaka ,  Eisuke Inoue ,  Kazutaka Tsuji ,  Hirofumi Ogawa

发明人： Kenkichi Tanioka ,  Mitsuo Kosugi ,  Junichi Yamazaki ,  Keiichi Shidara ,  Kazuhisa Taketoshi ,  Tatsuro Kawamura ,  Eikyuu Hiruma ,  Shiro Suzuki ,  Takashi Yamashita ,  Masaaki Aiba ,  Yochizumi Ikeda ,  Tadaaki Hirai ,  Yukio Takasaki ,  Sachio Ishioka ,  Tatsuo Makishima ,  Kenji Sameshima ,  Tsuyoshi Uda ,  Naohiro Goto ,  Yasuhiko Nonaka ,  Eisuke Inoue ,  Kazutaka Tsuji ,  Hirofumi Ogawa

IPC分类号： H01J29/45

CPC分类号： H01J29/456

摘要： A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property.

公开(公告)号：US4888521A

公开(公告)日：1989-12-19

申请号：US69156

申请日：1987-07-02

申请人： Kenkichi Tanioka ,  Keiichi Shidara ,  Tatsuro Kawamura ,  Junichi Yamazaki ,  Eikyuu Hiruma ,  Kazuhisa Taketoshi ,  Shiro Suzuki ,  Takashi Yamashita ,  Mitsuo Kosugi ,  Yochizumi Ikeda ,  Masaaki Aiba ,  Tadaaki Hirai ,  Yukio Takasaki ,  Sachio Ishioka ,  Tatsuo Makishima ,  Kenji Sameshima ,  Tsuyoshi Uda ,  Naohiro Goto ,  Yasuhiko Nonaka ,  Eisuke Inoue ,  Kazutaka Tsuji ,  Hirofumi Ogawa

发明人： Kenkichi Tanioka ,  Keiichi Shidara ,  Tatsuro Kawamura ,  Junichi Yamazaki ,  Eikyuu Hiruma ,  Kazuhisa Taketoshi ,  Shiro Suzuki ,  Takashi Yamashita ,  Mitsuo Kosugi ,  Yochizumi Ikeda ,  Masaaki Aiba ,  Tadaaki Hirai ,  Yukio Takasaki ,  Sachio Ishioka ,  Tatsuo Makishima ,  Kenji Sameshima ,  Tsuyoshi Uda ,  Naohiro Goto ,  Yasuhiko Nonaka ,  Eisuke Inoue ,  Kazutaka Tsuji ,  Hirofumi Ogawa

IPC分类号： H01J29/45 ,  H01J31/38

CPC分类号： H01J29/456

摘要： A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property.

摘要翻译： 公开了一种具有光电导层的光电导器件，该光电导层包括至少部分能够进行电荷倍增的非​​晶半导体层。 还公开了操作这种光电导器件的方法。 通过使用非晶半导体层的雪崩效应，可以实现高灵敏度的感光器件，同时保持低滞后特性。

公开(公告)号：US4980736A

公开(公告)日：1990-12-25

申请号：US155809

申请日：1988-02-16

申请人： Yukio Takasaki ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Tadaaki Hirai ,  Sachio Ishioka ,  Tatsuro Kawamura ,  Keiichi Shidara ,  Eikyu Hiruma ,  Kenkichi Tanioka ,  Junichi Yamazaki ,  Kenji Sameshima ,  Hirokazu Matsubara ,  Kazuhisa Taketoshi

发明人： Yukio Takasaki ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Tadaaki Hirai ,  Sachio Ishioka ,  Tatsuro Kawamura ,  Keiichi Shidara ,  Eikyu Hiruma ,  Kenkichi Tanioka ,  Junichi Yamazaki ,  Kenji Sameshima ,  Hirokazu Matsubara ,  Kazuhisa Taketoshi

IPC分类号： H01L31/0376 ,  H01L31/09 ,  H01L31/107 ,  H01L31/20

CPC分类号： H01L31/095 ,  H01L31/03765 ,  H01L31/107 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

摘要： A photoelectric conversion device using an amorphous material composed mainly of tetrahedral elements including at least an element of hydrogen and halogens as semiconductor material is disclosed. When a strong electric field is applied to a layer formed by using this amorphous semiconductor, a charge multiplication effect is produced mainly in the interior of the amorphous semiconductor and thus it is possible to obtain a thermally stable photoelectric conversion device having a high sensitivity while keeping a good photoresponse.

公开(公告)号：US4900975A

公开(公告)日：1990-02-13

申请号：US67229

申请日：1987-06-29

申请人： Yasuharu Shimomoto ,  Sachio Ishioka ,  Yukio Takasaki ,  Tadaaki Hirai ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Hirokazu Matsubara ,  Kenji Sameshima ,  Junichi Yamazaki ,  Kenkichi Tanioka ,  Mitsuo Kosugi ,  Keiichi Shidara ,  Tatsuro Kawamura ,  Eikyuu Hiruma ,  Takashi Yamashita

发明人： Yasuharu Shimomoto ,  Sachio Ishioka ,  Yukio Takasaki ,  Tadaaki Hirai ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Hirokazu Matsubara ,  Kenji Sameshima ,  Junichi Yamazaki ,  Kenkichi Tanioka ,  Mitsuo Kosugi ,  Keiichi Shidara ,  Tatsuro Kawamura ,  Eikyuu Hiruma ,  Takashi Yamashita

IPC分类号： H01L31/08 ,  H01J29/45 ,  H01J31/38

CPC分类号： H01J29/456

摘要： A target of an image pickup tube is formed by laminating at least a transparent conductive film, an amorphous layer consisting essentially of silicon, and an amorphous layer consisting essentially of selenium in the above order on a light-transmitting substrate.

摘要翻译： 图像拾取管的目标是通过在透光性基板上层叠至少透明导电膜，基本上由硅构成的非晶层和基本上由硒组成的非晶层。

公开(公告)号：US5196702A

公开(公告)日：1993-03-23

申请号：US824857

申请日：1991-12-11

申请人： Kazutaka Tsuji ,  Tadaaki Hirai ,  Yukio Takasaki ,  Haruo Itoh ,  Tetshuhiko Takahashi ,  Kenichi Okajima

发明人： Kazutaka Tsuji ,  Tadaaki Hirai ,  Yukio Takasaki ,  Haruo Itoh ,  Tetshuhiko Takahashi ,  Kenichi Okajima

IPC分类号： H04N5/32

CPC分类号： H04N5/32

摘要： An optically reading type photo-sensor for reading out an information signal of a signal light with a signal reading light includes a first photoconductor (101) and a second photoconductor (102) interposed between two electrodes (104 and 105); an intermediate region (103) disposed between those two photoconductors for storing and recombining carriers; and an optical source (107) for emitting a signal reading light for uninformalizing the potential in said second photoconductor (102), whereby a successive signal reading can be accomplished without any special preparations for the incidence of the signal light. The photo-sensor can be applied to a variety of imaging devices.

摘要翻译： PCT No.PCT / JP88 / 01073 Sec。 371日期1989年8月21日 102（e）日期1989年8月21日PCT提交1988年10月21日PCT公布。 出版物WO89 / 04063 用于读出具有信号读取光的信号光的信息信号的光学读取型光电传感器包括插入在两个电极（104和105）之间的第一感光体（101）和第二感光体（102） ）; 设置在这两个光电导体之间的用于存储和重组载体的中间区域（103） 以及用于发射用于对所述第二光电导体（102）中的电位进行非正规化的信号读取光的光源（107），由此可以在不对信号光的入射进行任何特别准备的情况下实现连续的信号读取。 光电传感器可以应用于各种成像设备。