公开(公告)号：US20050272274A1

公开(公告)日：2005-12-08

申请号：US11198656

申请日：2005-08-05

申请人： Masakiyo Matsumura ,  Mikihiko Nishitani ,  Yoshinobu Kimura ,  Masayuki Jyumonji ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Fumiki Nakano

发明人： Masakiyo Matsumura ,  Mikihiko Nishitani ,  Yoshinobu Kimura ,  Masayuki Jyumonji ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Fumiki Nakano

IPC分类号： B23K26/06 ,  C30B1/00 ,  C30B13/00 ,  C30B13/24 ,  H01L21/20 ,  H01L21/268 ,  H01L21/26

CPC分类号： H01L21/02678 ,  B23K26/06 ,  B23K26/066 ,  B23K2101/40 ,  C30B1/00 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02691 ,  H01L21/2026 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1016

摘要： Disclosed are apparatus for forming a semiconductor film having an excellent crystallinity from a non-single crystal semiconducting layer formed on a base layer made of an insulating material. The apparatus includes a light source, a homogenizer for homogenizing an intensity distribution of the emitted light, an amplitude-modulation means for performing the amplitude-modulation such that the amplitude of the light, of which the intensity distribution is homogenized, is increased in the direction of the relative motion of the light to the base layer, an optional light projection optical system for projecting the amplitude-modulated light onto the surface of the non-single crystal semiconductor such that a predetermined irradiation energy can be obtained, a phase shifter for providing a low temperature point in the surface irradiated by the light, and a substrate stage to move the light relative to the substrate thereby enabling scanning in the X and Y axis.

摘要翻译： 公开了一种从由绝缘材料制成的基底层上形成的非单晶半导体层形成具有优异结晶度的半导体膜的装置。 该装置包括光源，用于均匀化发射光的强度分布的均质器，用于执行调幅的幅度调制装置，使得强度分布均匀化的光的振幅在 光向基层的相对运动的方向，用于将调幅光投影到非单晶半导体的表面上以使得能够获得预定的照射能量的可选的光投射光学系统，用于 在由光照射的表面中提供低温点，以及衬底台，以相对于衬底移动光，从而使得能够在X和Y轴上进行扫描。

公开(公告)号：US06946367B2

公开(公告)日：2005-09-20

申请号：US10366754

申请日：2003-02-13

申请人： Masakiyo Matsumura ,  Mikihiko Nishitani ,  Yoshinobu Kimura ,  Masayuki Jyumonji ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Fumiki Nakano

发明人： Masakiyo Matsumura ,  Mikihiko Nishitani ,  Yoshinobu Kimura ,  Masayuki Jyumonji ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Fumiki Nakano

IPC分类号： B23K26/06 ,  C30B1/00 ,  C30B13/00 ,  C30B13/24 ,  H01L21/20 ,  H01L21/268 ,  H01L21/322

CPC分类号： H01L21/02678 ,  B23K26/06 ,  B23K26/066 ,  B23K2101/40 ,  C30B1/00 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02691 ,  H01L21/2026 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1016

摘要： Methods for forming a single crystal semiconductor thin film layer from a non-single crystal layer includes directing a light source having a homogenized intensity distribution and a modulated amplitude towards the non-single crystal layer, and relatively moving the light with respect to the layer wherein the amplitude of the conditioned light is preferably increased in the direction of relative motion of the light to the layer. Preferred methods also include multiple light exposures in overlapping series to form ribbon-shaped single crystal regions, and providing a low temperature point in the semiconductor layer to generate a starting location for single crystalization.

摘要翻译： 从非单晶层形成单晶半导体薄膜层的方法包括将具有均匀强度分布和调制振幅的光源引向非单晶层，并相对于其相对移动光， 调节后的光的振幅优选在光的相对运动方向上增加。 优选的方法还包括重叠系列中的多次曝光以形成带状单晶区域，并且在半导体层中提供低温点以产生用于单晶化的起始位置。

公开(公告)号：US07335261B2

公开(公告)日：2008-02-26

申请号：US11198656

申请日：2005-08-05

申请人： Masakiyo Matsumura ,  Mikihiko Nishitani ,  Yoshinobu Kimura ,  Masayuki Jyumonji ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Fumiki Nakano

发明人： Masakiyo Matsumura ,  Mikihiko Nishitani ,  Yoshinobu Kimura ,  Masayuki Jyumonji ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Fumiki Nakano

IPC分类号： C30B1/04

CPC分类号： H01L21/02678 ,  B23K26/06 ,  B23K26/066 ,  B23K2101/40 ,  C30B1/00 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02691 ,  H01L21/2026 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1016

摘要： Disclosed are apparatus for forming a semiconductor film having an excellent crystallinity from a non-single crystal semiconducting layer formed on a base layer made of an insulating material. The apparatus includes a light source, a homogenizer for homogenizing an intensity distribution of the emitted light, an amplitude-modulation means for performing the amplitude-modulation such that the amplitude of the light, of which the intensity distribution is homogenized, is increased in the direction of the relative motion of the light to the base layer, an optional light projection optical system for projecting the amplitude-modulated light onto the surface of the non-single crystal semiconductor such that a predetermined irradiation energy can be obtained, a phase shifter for providing a low temperature point in the surface irradiated by the light, and a substrate stage to move the light relative to the substrate thereby enabling scanning in the X and Y axis.

摘要翻译： 公开了一种从由绝缘材料制成的基底层上形成的非单晶半导体层形成具有优异结晶度的半导体膜的装置。 该装置包括光源，用于均匀化发射光的强度分布的均质器，用于执行调幅的幅度调制装置，使得强度分布均匀化的光的振幅在 光向基层的相对运动的方向，用于将调幅光投影到非单晶半导体的表面上以使得能够获得预定的照射能量的可选的光投射光学系统，用于 在由光照射的表面中提供低温点，以及衬底台，以相对于衬底移动光，从而使得能够在X和Y轴上进行扫描。

公开(公告)号：US20050145845A1

公开(公告)日：2005-07-07

申请号：US11041413

申请日：2005-01-25

申请人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yoshinobu Kimura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Yukio Taniguchi ,  Fumiki Nakano ,  Hiroyuki Ogawa

发明人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yoshinobu Kimura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Yukio Taniguchi ,  Fumiki Nakano ,  Hiroyuki Ogawa

IPC分类号： H01L21/324 ,  B23K26/04 ,  B23K26/06 ,  B23K26/067 ,  B23K26/073 ,  B23K26/42 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L21/77 ,  H01L29/04 ,  H01L29/786 ,  H01L29/76 ,  H01L21/84

CPC分类号： B23K26/04 ,  B23K26/066 ,  B23K26/067 ,  B23K26/073 ,  B23K26/705 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： The semiconductor device according to the present invention has a semiconductor layer having not smaller than two types of crystal grains different in size within a semiconductor circuit on a same substrate.

公开(公告)号：US06870126B2

公开(公告)日：2005-03-22

申请号：US10668285

申请日：2003-09-24

申请人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yoshinobu Kimura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Yukio Taniguchi ,  Fumiki Nakano ,  Hiroyuki Ogawa

发明人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yoshinobu Kimura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Yukio Taniguchi ,  Fumiki Nakano ,  Hiroyuki Ogawa

IPC分类号： H01L21/324 ,  B23K26/04 ,  B23K26/06 ,  B23K26/067 ,  B23K26/073 ,  B23K26/42 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L21/77 ,  H01L29/04 ,  H01L29/786 ,  B23K26/00

CPC分类号： B23K26/04 ,  B23K26/066 ,  B23K26/067 ,  B23K26/073 ,  B23K26/705 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： The semiconductor device according to the present invention has a semiconductor layer having not smaller than two types of crystal grains different in size within a semiconductor circuit on a same substrate.

摘要翻译： 根据本发明的半导体器件具有在相同基板上的半导体电路内具有不小于两种尺寸不同的晶粒的半导体层。

公开(公告)号：US20070096103A1

公开(公告)日：2007-05-03

申请号：US11612768

申请日：2006-12-19

申请人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yoshinobu Kimura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Yukio Taniguchi ,  Fumiki Nakano ,  Hiroyuki Ogawa

发明人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yoshinobu Kimura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Yukio Taniguchi ,  Fumiki Nakano ,  Hiroyuki Ogawa

IPC分类号： H01L29/04

CPC分类号： B23K26/04 ,  B23K26/066 ,  B23K26/067 ,  B23K26/073 ,  B23K26/705 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： The semiconductor device according to the present invention has a semiconductor layer having not smaller than two types of crystal grains different in size within a semiconductor circuit on a same substrate.

摘要翻译： 根据本发明的半导体器件具有在相同基板上的半导体电路内具有不小于两种尺寸不同的晶粒的半导体层。

公开(公告)号：US07186602B2

公开(公告)日：2007-03-06

申请号：US11041413

申请日：2005-01-25

申请人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yoshinobu Kimura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Yukio Taniguchi ,  Fumiki Nakano ,  Hiroyuki Ogawa

发明人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yoshinobu Kimura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Yukio Taniguchi ,  Fumiki Nakano ,  Hiroyuki Ogawa

IPC分类号： H01L21/84 ,  H01L21/324

CPC分类号： B23K26/04 ,  B23K26/066 ,  B23K26/067 ,  B23K26/073 ,  B23K26/705 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： The semiconductor device according to the present invention has a semiconductor layer having not smaller than two types of crystal grains different in size within a semiconductor circuit on a same substrate.

摘要翻译： 根据本发明的半导体器件具有在相同基板上的半导体电路内具有不小于两种尺寸不同的晶粒的半导体层。

公开(公告)号：US07352002B2

公开(公告)日：2008-04-01

申请号：US11403938

申请日：2006-04-14

申请人： Yoshinobu Kimura ,  Masakiyo Matsumura ,  Yoshitaka Yamamoto ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Fumiki Nakano

发明人： Yoshinobu Kimura ,  Masakiyo Matsumura ,  Yoshitaka Yamamoto ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Fumiki Nakano

IPC分类号： H01L29/04

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/2026 ,  H01L29/66757 ,  H01L29/78675

摘要： A method of manufacturing a thin-film semiconductor device substrate includes a step of forming a non-single crystalline semiconductor thin film on a base layer, and an annealing step of irradiating the non-single crystalline semiconductor thin film with an energy beam to enhance crystallinity of a non-single crystalline semiconductor constituting the non-single crystalline semiconductor thin film. The annealing step includes simultaneously irradiating the non-single crystalline semiconductor thin film with a plurality of energy beams to form a plurality of unit regions each including at least one irradiated region irradiated with the energy beam and at least one non-irradiated region that is not irradiated with the energy beam.

摘要翻译： 制造薄膜半导体器件衬底的方法包括在基底层上形成非单晶半导体薄膜的步骤和用能量束照射非单晶半导体薄膜以提高结晶度的退火步骤 构成非单晶半导体薄膜的非单晶半导体。 退火步骤包括同时用多个能量束照射非单晶半导体薄膜，以形成多个单位区域，每个单位区域包括至少一个被能量束照射的照射区域和至少一个不照射的非照射区域 用能量束照射。

公开(公告)号：US20060197093A1

公开(公告)日：2006-09-07

申请号：US11403938

申请日：2006-04-14

申请人： Yoshinobu Kimura ,  Masakiyo Matsumura ,  Yoshitaka Yamamoto ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Fumiki Nakano

发明人： Yoshinobu Kimura ,  Masakiyo Matsumura ,  Yoshitaka Yamamoto ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Fumiki Nakano

IPC分类号： H01L29/04 ,  H01L21/84

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/2026 ,  H01L29/66757 ,  H01L29/78675

摘要： A method of manufacturing a thin-film semiconductor device substrate includes a step of forming a non-single crystalline semiconductor thin film on a base layer, and an annealing step of irradiating the non-single crystalline semiconductor thin film with an energy beam to enhance crystallinity of a non-single crystalline semiconductor constituting the non-single crystalline semiconductor thin film. The annealing step includes simultaneously irradiating the non-single crystalline semiconductor thin film with a plurality of energy beams to form a plurality of unit regions each including at least one irradiated region irradiated with the energy beam and at least one non-irradiated region that is not irradiated with the energy beam.

摘要翻译： 制造薄膜半导体器件衬底的方法包括在基底层上形成非单晶半导体薄膜的步骤和用能量束照射非单晶半导体薄膜以提高结晶度的退火步骤 构成非单晶半导体薄膜的非单晶半导体。 退火步骤包括同时用多个能量束照射非单晶半导体薄膜，以形成多个单位区域，每个单位区域包括至少一个被能量束照射的照射区域和至少一个不照射的非照射区域 用能量束照射。

公开(公告)号：US07087505B2

公开(公告)日：2006-08-08

申请号：US10755303

申请日：2004-01-13

申请人： Yoshinobu Kimura ,  Masakiyo Matsumura ,  Yoshitaka Yamamoto ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Fumiki Nakano

发明人： Yoshinobu Kimura ,  Masakiyo Matsumura ,  Yoshitaka Yamamoto ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Fumiki Nakano

IPC分类号： H01L21/20

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/2026 ,  H01L29/66757 ,  H01L29/78675

摘要： A method of manufacturing a thin-film semiconductor device substrate includes a step of forming a non-single crystalline semiconductor thin film on a base layer, and an annealing step of irradiating the non-single crystalline semiconductor thin film with an energy beam to enhance crystallinity of a non-single crystalline semiconductor constituting the non-single crystalline semiconductor thin film. The annealing step includes simultaneously irradiating the non-single crystalline semiconductor thin film with a plurality of energy beams to form a plurality of unit regions each including at least one irradiated region irradiated with the energy beam and at least one non-irradiated region that is not irradiated with the energy beam.