公开(公告)号：US20120228496A1

公开(公告)日：2012-09-13

申请号：US13235388

申请日：2011-09-18

申请人： Masako OGATA ,  Ikuo Fujiwara ,  Hiroto Honda ,  Kazuhiro Suzuki ,  Honam Kwon ,  Risako Ueno ,  Hitoshi Yagi ,  Masaki Atsuta ,  Koichi Ishii ,  Keita Sasaki ,  Hideyuki Funaki

发明人： Masako OGATA ,  Ikuo Fujiwara ,  Hiroto Honda ,  Kazuhiro Suzuki ,  Honam Kwon ,  Risako Ueno ,  Hitoshi Yagi ,  Masaki Atsuta ,  Koichi Ishii ,  Keita Sasaki ,  Hideyuki Funaki

IPC分类号： H01L27/146 ,  H01L31/18

CPC分类号： H01L27/14649 ,  H01L27/14632 ,  H01L27/14687

摘要： An uncooled infrared imaging element includes a pixel region, a device region, and a support substrate. The pixel region includes heat-sensitive pixels. The heat-sensitive pixels are arranged in a matrix and change current-voltage characteristics thereof in accordance with receiving amounts of infrared. The device region includes at least one of a drive circuit and a readout circuit which includes a MOS transistor. The drive circuit drives the heat-sensitive pixels. The readout circuit detects signals of the heat-sensitive pixels. The support substrate is provided with a cavity region to be under pixel region and the MOS transistor.

摘要翻译： 非制冷红外成像元件包括像素区域，器件区域和支撑衬底。 像素区域包括热敏像素。 热敏像素被布置成矩阵并且根据接收到的红外线量来改变其电流 - 电压特性。 器件区域包括驱动电路和包括MOS晶体管的读出电路中的至少一个。 驱动电路驱动热敏像素。 读出电路检测热敏像素的信号。 支撑基板设置有在像素区域下方的空腔区域和MOS晶体管。

公开(公告)号：US08629396B2

公开(公告)日：2014-01-14

申请号：US13235388

申请日：2011-09-18

申请人： Masako Ogata ,  Ikuo Fujiwara ,  Hiroto Honda ,  Kazuhiro Suzuki ,  Honam Kwon ,  Risako Ueno ,  Hitoshi Yagi ,  Masaki Atsuta ,  Koichi Ishii ,  Keita Sasaki ,  Hideyuki Funaki

发明人： Masako Ogata ,  Ikuo Fujiwara ,  Hiroto Honda ,  Kazuhiro Suzuki ,  Honam Kwon ,  Risako Ueno ,  Hitoshi Yagi ,  Masaki Atsuta ,  Koichi Ishii ,  Keita Sasaki ,  Hideyuki Funaki

IPC分类号： H01L27/146

CPC分类号： H01L27/14649 ,  H01L27/14632 ,  H01L27/14687

摘要： An uncooled infrared imaging element includes a pixel region, a device region, and a support substrate. The pixel region includes heat-sensitive pixels. The heat-sensitive pixels are arranged in a matrix and change current-voltage characteristics thereof in accordance with receiving amounts of infrared. The device region includes at least one of a drive circuit and a readout circuit which includes a MOS transistor. The drive circuit drives the heat-sensitive pixels. The readout circuit detects signals of the heat-sensitive pixels. The support substrate is provided with a cavity region to be under pixel region and the MOS transistor.

摘要翻译： 非制冷红外成像元件包括像素区域，器件区域和支撑衬底。 像素区域包括热敏像素。 热敏像素被布置成矩阵并且根据接收到的红外线量来改变其电流 - 电压特性。 器件区域包括驱动电路和包括MOS晶体管的读出电路中的至少一个。 驱动电路驱动热敏像素。 读出电路检测热敏像素的信号。 支撑基板设置有在像素区域下方的空腔区域和MOS晶体管。

公开(公告)号：US08338902B2

公开(公告)日：2012-12-25

申请号：US13050512

申请日：2011-03-17

申请人： Honam Kwon ,  Hideyuki Funaki ,  Hiroto Honda ,  Hitoshi Yagi ,  Ikuo Fujiwara ,  Masaki Atsuta ,  Kazuhiro Suzuki ,  Keita Sasaki ,  Koichi Ishii

发明人： Honam Kwon ,  Hideyuki Funaki ,  Hiroto Honda ,  Hitoshi Yagi ,  Ikuo Fujiwara ,  Masaki Atsuta ,  Kazuhiro Suzuki ,  Keita Sasaki ,  Koichi Ishii

IPC分类号： H01L31/024

CPC分类号： H01L27/14649 ,  G01J5/007 ,  G01J5/20 ,  G01J2005/068

摘要： An uncooled infrared image sensor according to an embodiments includes: a plurality of pixel cells formed in a first region on a semiconductor substrate; a reference pixel cell formed in a second region on the semiconductor substrate and corresponding to each row or each column of the pixel cells; a supporting unit formed for each of the pixel cell and supporting a corresponding pixel cell; and an interconnect unit formed for each reference pixel cell. Each of the pixel cells includes: a first infrared absorption film and a first heat sensitive element. The reference pixel cell includes: a second infrared absorption film and a second heat sensitive element, the second heat sensitive element having the same characteristics as characteristics of the first heat sensitive element. The third and fourth interconnects of the interconnect unit have the same electrical resistance as electrical resistance of the first and second interconnects of the supporting unit.

摘要翻译： 根据实施例的非制冷红外图像传感器包括：形成在半导体衬底上的第一区域中的多个像素单元; 形成在所述半导体衬底上的与所述像素单元的每列或每列相对应的所述半导体衬底上的第二区域中的参考像素单元; 为每个像素单元形成的支撑单元，并支撑相应的像素单元; 以及为每个参考像素单元形成的互连单元。 每个像素单元包括：第一红外线吸收膜和第一热敏元件。 参考像素单元包括：第二红外线吸收膜和第二热敏元件，第二热敏元件具有与第一热敏元件的特性相同的特性。 互连单元的第三和第四互连具有与支撑单元的第一和第二互连的电阻相同的电阻。

公开(公告)号：US20130248714A1

公开(公告)日：2013-09-26

申请号：US13728009

申请日：2012-12-27

申请人： Hiroto Honda ,  Kazuhiro Suzuki ,  Hideyuki Funaki ,  Masaki Atsuta ,  Keita Sasaki ,  Koichi Ishii ,  Honam Kwon

发明人： Hiroto Honda ,  Kazuhiro Suzuki ,  Hideyuki Funaki ,  Masaki Atsuta ,  Keita Sasaki ,  Koichi Ishii ,  Honam Kwon

IPC分类号： H01L27/146 ,  G01J5/20

CPC分类号： G01J5/12 ,  G01J5/023 ,  G01J5/20 ,  G01J5/22 ,  G01J2005/0077 ,  H01L27/14649 ,  H04N5/33

摘要： An uncooled infrared imaging device according to an embodiment includes: reference pixels formed on a semiconductor substrate and arranged in at least one row; and infrared detection pixels arranged in the remaining rows and detecting incident infrared rays. Each of the reference pixels includes a first cell located above a first concave portion. The first cell includes a first thermoelectric conversion unit having a first infrared absorption film; and a first thermoelectric conversion element. Each of the infrared detection pixels includes a second cell located above a second concave portion, and having a larger area than the first cell. The second cell includes: a second thermoelectric converting unit located above the second concave portion; and first and second supporting structure units supporting the second thermoelectric converting unit above the second concave portion. The second thermoelectric converting unit includes: a second infrared absorption film; and a second thermoelectric conversion element.

摘要翻译： 根据实施例的非冷却红外成像装置包括：形成在半导体衬底上并布置在至少一行中的参考像素; 以及布置在其余行中的红外检测像素，并检测入射的红外线。 每个参考像素包括位于第一凹部上方的第一单元。 第一电池包括具有第一红外线吸收膜的第一热电转换单元; 和第一热电转换元件。 每个红外检测像素包括位于第二凹部上方的第二单元，并且具有比第一单元更大的面积。 第二单元包括：位于第二凹部上方的第二热电转换单元; 以及第一和第二支撑结构单元，其在第二凹部上方支撑第二热电转换单元。 第二热电转换单元包括：第二红外线吸收膜; 和第二热电转换元件。

公开(公告)号：US20130093902A1

公开(公告)日：2013-04-18

申请号：US13648376

申请日：2012-10-10

申请人： Hiroto HONDA ,  Hideyuki Funaki ,  Keita Sasaki ,  Kazuhiro Suzuki ,  Masaki Atsuta ,  Koichi Ishii ,  Ikuo Fujiwara

发明人： Hiroto HONDA ,  Hideyuki Funaki ,  Keita Sasaki ,  Kazuhiro Suzuki ,  Masaki Atsuta ,  Koichi Ishii ,  Ikuo Fujiwara

IPC分类号： H04N5/33

CPC分类号： H04N5/33 ,  H04N5/3597

摘要： An infrared solid state imaging device includes an infrared detection element unit having heat sensitive pixels, an AD conversion unit which conducts analog-to-digital conversion on an infrared image signal obtained by the infrared detection element unit, and a digital signal processing unit which converts the image signal converted to a digital signal. The digital signal processing unit stores an image value produced from the digital signal, and acquired in a frame immediately preceding a current frame, subtracts an image value obtained by multiplying the image value acquired in the frame immediately preceding the current frame by a predetermined constant α in a range of 0 to 1, from an image value acquired in the current frame, and conducts processing of multiplying a resultant image value obtained by the subtraction by 1/(1−α) so that an infrared image with less afterimage is provided.

摘要翻译： 一种红外固体摄像装置，具备：具有热敏像素的红外线检测元件单元，对由红外线检测元件单元得到的红外图像信号进行模数变换的AD转换单元;以及数字信号处理单元， 图像信号转换成数字信号。 数字信号处理单元存储从数字信号产生并且在紧邻当前帧之前的帧中获取的图像值，减去通过将在当前帧之前的帧中获取的图像值乘以预定常数α而获得的图像值 在从当前帧中获取的图像值的0到1的范围内，并且进行将通过减法获得的合成图像值乘以1 /（1-α）的处理，使得提供具有较少余像的红外图像。

公开(公告)号：US08541861B2

公开(公告)日：2013-09-24

申请号：US13069610

申请日：2011-03-23

申请人： Masaki Atsuta ,  Hideyuki Funaki ,  Keita Sasaki

发明人： Masaki Atsuta ,  Hideyuki Funaki ,  Keita Sasaki

IPC分类号： H01L31/058

CPC分类号： G01J5/10 ,  G01J5/02 ,  G01J5/0225 ,  G01J5/023 ,  G01J5/024 ,  G01J5/08 ,  G01J5/0853 ,  G01J5/20

摘要： According to one embodiment, an infrared detection device includes a detection element. The detection element includes a semiconductor substrate, a signal interconnect section, a detection cell and a support section. The semiconductor substrate is provided with a cavity on a surface of the semiconductor substrate. The signal interconnect section is provided in a region surrounding the cavity of the semiconductor substrate. The detection cell spaced from the semiconductor substrate above the cavity includes a thermoelectric conversion layer, and an absorption layer. The absorption layer is laminated with the thermoelectric conversion layer, and provided with a plurality of holes each having a shape whose upper portion is widened. The support section holds the detection cell above the cavity and connects the signal interconnect section and the detection cell.

摘要翻译： 根据一个实施例，红外检测装置包括检测元件。 检测元件包括半导体衬底，信号互连部分，检测单元和支撑部分。 半导体衬底在半导体衬底的表面上设置有空腔。 信号互连部分设置在围绕半导体衬底的空腔的区域中。 与空腔上方的半导体衬底间隔开的检测单元包括热电转换层和吸收层。 吸收层与热电转换层层叠，并且设置有多个孔，每个孔具有上部加宽的形状。 支撑部分将检测单元保持在空腔上方并连接信号互连部分和检测单元。

公开(公告)号：US20120061791A1

公开(公告)日：2012-03-15

申请号：US13069610

申请日：2011-03-23

申请人： Masaki Atsuta ,  Hideyuki Funaki ,  Keita Sasaki

发明人： Masaki Atsuta ,  Hideyuki Funaki ,  Keita Sasaki

IPC分类号： H01L29/66

CPC分类号： G01J5/10 ,  G01J5/02 ,  G01J5/0225 ,  G01J5/023 ,  G01J5/024 ,  G01J5/08 ,  G01J5/0853 ,  G01J5/20

摘要： According to one embodiment, an infrared detection device includes a detection element. The detection element includes a semiconductor substrate, a signal interconnect section, a detection cell and a support section. The semiconductor substrate is provided with a cavity on a surface of the semiconductor substrate. The signal interconnect section is provided in a region surrounding the cavity of the semiconductor substrate. The detection cell spaced from the semiconductor substrate above the cavity includes a thermoelectric conversion layer, and an absorption layer. The absorption layer is laminated with the thermoelectric conversion layer, and provided with a plurality of holes each having a shape whose upper portion is widened. The support section holds the detection cell above the cavity and connects the signal interconnect section and the detection cell.

摘要翻译： 根据一个实施例，红外检测装置包括检测元件。 检测元件包括半导体衬底，信号互连部分，检测单元和支撑部分。 半导体衬底在半导体衬底的表面上设置有空腔。 信号互连部分设置在围绕半导体衬底的空腔的区域中。 与空腔上方的半导体衬底间隔开的检测单元包括热电转换层和吸收层。 吸收层与热电转换层层叠，并且设置有多个孔，每个孔具有上部加宽的形状。 支撑部分将检测单元保持在空腔上方并连接信号互连部分和检测单元。

公开(公告)号：US06559449B2

公开(公告)日：2003-05-06

申请号：US09817150

申请日：2001-03-27

申请人： Mitsushi Ikeda ,  Masaki Atsuta ,  Katsuyuki Naito ,  Akira Kinno ,  Hitoshi Yagi ,  Manabu Tanaka

发明人： Mitsushi Ikeda ,  Masaki Atsuta ,  Katsuyuki Naito ,  Akira Kinno ,  Hitoshi Yagi ,  Manabu Tanaka

IPC分类号： G21K400

CPC分类号： G01T1/243 ,  G01T1/2018 ,  H01L27/14663

摘要： A planar X-ray detector including an X-ray-electric charge conversion film converting an incident X-ray into an electric charge, a pixel electrode contiguous to the X-ray-electric charge conversion film and arranged for every pixel, and a switching element connected to the pixel electrode. Also included is a signal line connected to the switching element, and a scanning line supplying a driving signal to the switching element. Further, the X-ray-electric charge conversion film contains phosphor particles, a photosensitive material, and a carrier transfer material.

摘要翻译： 一种平面X射线检测器，其包括将入射的X射线转换为电荷的X射线电荷转换膜，与X射线电荷转换膜邻接的像素电极，并且对每个像素进行切换 元件连接到像素电极。 还包括连接到开关元件的信号线和向开关元件提供驱动信号的扫描线。 此外，X射线电荷转换膜含有荧光体颗粒，感光材料和载体转印材料。

公开(公告)号：US07728301B2

公开(公告)日：2010-06-01

申请号：US12397746

申请日：2009-03-04

申请人： Masaki Atsuta ,  Yujiro Hara ,  Hideyuki Nakao

发明人： Masaki Atsuta ,  Yujiro Hara ,  Hideyuki Nakao

IPC分类号： G01T1/24

CPC分类号： G01T1/249 ,  G01T1/247

摘要： An X-ray detector includes: a semiconductor substrate to generate charged particles by an irradiation of an X-ray; a plurality of pixel electrodes arranged in matrix on an X-ray incident surface of the semiconductor substrate and applied with a first electric potential to detect the charged particles; and a platy electrode provided on a surface opposite to the X-ray incident surface of the semiconductor substrate and applied with a second electric potential different from the first electric potential.

摘要翻译： X射线检测器包括：通过X射线照射产生带电粒子的半导体衬底; 在半导体衬底的X射线入射表面上排列成矩阵的多个像素电极，并施加第一电位以检测带电粒子; 以及设置在与所述半导体衬底的X射线入射表面相对的表面并施加不同于所述第一电位的第二电位的板状电极。

公开(公告)号：US5738948A

公开(公告)日：1998-04-14

申请号：US536608

申请日：1995-09-29

申请人： Mitsushi Ikeda ,  Yoshiko Tsuji ,  Yujiro Hara ,  Masaki Atsuta ,  Yoshifumi Ogawa ,  Toshiyuki Oka ,  Momoko Takemura

发明人： Mitsushi Ikeda ,  Yoshiko Tsuji ,  Yujiro Hara ,  Masaki Atsuta ,  Yoshifumi Ogawa ,  Toshiyuki Oka ,  Momoko Takemura

IPC分类号： G02F1/1362 ,  G02F1/1343 ,  C22C27/04

CPC分类号： G02F1/136286 ,  Y10T428/12826 ,  Y10T428/1284

摘要： The present invention discloses an electrode wiring material including at least one main element selected from the group consisting of Mo and W and an additional element selected from the group consisting of Kr and Xe in an amount of 0.0003 atomic % to 3 atomic %. The present invention further discloses an electrode wiring substrate including an electrode wiring formed on a glass substrate, wherein the electrode wiring is formed of at least one metal selected from the group consisting of Mo and W and the lattice constant of the electrode wiring material is almost equal to the lattice constant of the electrode wiring material in a bulk state.

摘要翻译： 本发明公开了一种电极配线材料，其包含选自Mo和W中的至少一种主要元素和选自Kr3和Xe的另外的元素，其量为0.0003原子％至3原子％。 本发明还公开了一种电极布线基板，其包括在玻璃基板上形成的电极布线，其中，所述电极布线由选自Mo和W中的至少一种金属形成，并且所述电极布线材料的晶格常数几乎为 等于电极布线材料在大部分状态下的晶格常数。