Electrophotographic apparatus
    3.
    发明授权
    Electrophotographic apparatus 失效
    电子照相设备

    公开(公告)号:US5008706A

    公开(公告)日:1991-04-16

    申请号:US426197

    申请日:1989-10-25

    CPC分类号: G03G15/751 G03G15/0233

    摘要: An electrophotographic apparatus including a photosensitive member and a charging member disposed in contact with the photosensitive member; the photosensitive member being capable of being charged by applying a voltage to the charging member; wherein the ten-point mean surface roughness (Rz.sub.1) of the photosensitive member and the ten-point means surface roughness (Rz.sub.2) of the charging member satisfy the following relationships:______________________________________0.1 micron .ltoreq. Rz.sub.1 + Rz.sub.2 .ltoreq. 6.0 microns,0.05 micron .ltoreq. Rz.sub.1 .ltoreq. 5.0 microns, and0.05 micron .ltoreq. Rz.sub.2 .ltoreq.5.0 microns.______________________________________

    Electrophotographic apparatus having cleaning width larger than charging
width
    4.
    发明授权
    Electrophotographic apparatus having cleaning width larger than charging width 失效
    扫描宽度大于充电宽度的电子照相设备

    公开(公告)号:US5430527A

    公开(公告)日:1995-07-04

    申请号:US263394

    申请日:1994-06-21

    摘要: An image forming apparatus has a photosensitive member, a charging device, an image exposure device for exposing the photosensitive member to form a latent image, a developing device for developing the latent image with a toner to form a transferable toner image on the surface of the photosensitive member, a transfer device for transferring the toner image to a transfer material, and a cleaning device for removing a residual toner; the charging device, image exposure device, developing device, transfer device and cleaning device being disposed in the named order along the moving direction of the photosensitive member. The charging device includes an electroconductive member which directly contacts the photosensitive member surface to charge the photosensitive member surface. The electroconductive member forms a nip width with the photosensitive member of at least 0.5 mm and a load per unit contact area between the electroconductive member and photosensitive member is between 0.5-30 g/mm.sup.2. With respect to the longitudinal direction of the photosensitive member, the width of the photosensitive member surface cleaned by the cleaning device is equal to or greater than the width of the photosensitive member surface contacting the electroconductive member.

    摘要翻译: 图像形成装置具有感光构件,充电装置,用于曝光感光构件以形成潜像的图像曝光装置,用调色剂显影潜像的显影装置,以在该表面上形成可转印调色剂图像 感光构件,用于将调色剂图像转印到转印材料的转印装置,以及用于除去残留调色剂的清洁装置; 充电装置,图像曝光装置,显影装置,转印装置和清洁装置沿着感光构件的移动方向按照所述顺序设置。 充电装置包括直接接触感光构件表面以对感光构件表面充电的导电构件。 导电构件与感光构件形成至少0.5mm的压区宽度,并且导电构件和感光构件之间的每单位接触面积的负载为0.5-30g / mm 2。 关于感光构件的纵向方向,由清洁装置清洁的感光构件表面的宽度等于或大于与导电构件接触的感光构件表面的宽度。

    Memory element and memory device
    7.
    发明授权
    Memory element and memory device 有权
    存储器元件和存储器件

    公开(公告)号:US08611139B2

    公开(公告)日:2013-12-17

    申请号:US13226983

    申请日:2011-09-07

    IPC分类号: G11C11/00

    摘要: There is disclosed a memory element including a layered structure including a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer; and an insulating layer provided between the memory layer. An electron that is spin-polarized is injected in a lamination direction of a layered structure, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, in regard to the insulating layer that comes into contact with the memory layer, and the other side layer with which the memory layer comes into contact at a side opposite to the insulating layer, at least an interface that comes into contact with the memory layer is formed of an oxide film, and the memory layer includes at least one of non-magnetic metal and oxide in addition to a Co—Fe—B magnetic layer.

    摘要翻译: 公开了一种包括层叠结构的存储元件,该结构包括具有垂直于膜面的磁化的存储层; 磁化固定层; 以及设置在存储层之间的绝缘层。 自旋极化的电子沿着分层结构的层叠方向注入,存储层接收的有效抗磁场的大小相对于存储层的饱和磁化量小于相对于绝缘层的饱和磁化量 与存储层接触,并且存储层在与绝缘层相对的一侧接触的另一侧层,至少与存储层接触的界面由氧化物膜形成,并且 除了Co-Fe-B磁性层之外,存储层还包括非磁性金属和氧化物中的至少一种。

    Memory element and memory device
    9.
    发明授权
    Memory element and memory device 有权
    存储器元件和存储器件

    公开(公告)号:US08445980B2

    公开(公告)日:2013-05-21

    申请号:US13216453

    申请日:2011-08-24

    IPC分类号: H01L29/82 H01L43/00

    摘要: There is disclosed a memory element which includes a layered structure. The layered structure includes a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer having magnetization perpendicular to the film face; an insulating layer provided between the memory layer and the magnetization-fixed layer; and a cap layer provided at a face side, which is opposite to the insulating layer-side face, of the memory layer, in which an electron that is spin-polarized is injected in a lamination direction of the layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and at least a face, which comes into contact with the memory layer, of the cap layer is formed of a Ta film.

    摘要翻译: 公开了一种包含分层结构的存储元件。 层状结构包括具有垂直于膜面的磁化的存储层; 具有垂直于膜面的磁化的磁化固定层; 设置在所述存储层和所述磁化固定层之间的绝缘层; 以及在层叠结构的层叠方向上注入自旋极化的电子的存储层的与绝缘层侧面相反的面侧的盖层,由此磁化 存储层的方向变化,进行信息记录,存储层接收的有效抗磁场的大小小于存储层的饱和磁化量,至少与 盖层的记忆层由Ta膜形成。

    Memory and write control method
    10.
    发明授权
    Memory and write control method 失效
    内存和写控制方式

    公开(公告)号:US08437180B2

    公开(公告)日:2013-05-07

    申请号:US12795933

    申请日:2010-06-08

    IPC分类号: G11C11/00

    CPC分类号: G11C11/1675 G11C11/161

    摘要: A memory includes: a memory device that has a memory layer storing data as a magnetization state of a magnetic body and a magnetization fixed layer whose direction of magnetization is fixed through a nonmagnetic layer interposed between the memory layer and the magnetization fixed layer and stores the data in the memory layer by changing a magnetization direction of the memory layer when a write current flowing in a stacked direction of the memory layer and the magnetization fixed layer is applied; and a voltage control unit that supplies the write current configured by independent pulse trains of two or more to the memory device by using a write voltage that is configured by independent pulse trains of two or more.

    摘要翻译: 存储器包括:存储器件,其具有存储数据作为磁体的磁化状态的数据和磁化方向的磁化固定层,该磁化固定层通过介于存储层和磁化固定层之间的非磁性层固定,并存储 当存储层和磁化固定层的堆叠方向上流动的写入电流被施加时,通过改变存储层的磁化方向来改变存储层中的数据; 以及电压控制单元,其通过使用由两个或更多个独立脉冲串构成的写入电压将由两个或更多个独立脉冲串构成的写入电流提供给存储器件。