摘要:
A member for charging comprises a surface layer formed of a N-alkoxymethylated nylon. A contact charging method performs charging of a member to be charged arranged in contact with the member for charging by applying externally a voltage on the member for charging. An electrophotographic device comprises the member for charging and an electrophotographic photosensitive member arranged in contact with the member for charging.
摘要:
A charging member for electrophotography comprising a surface layer, wherein the surface layer comprises a resin and an alkali metal salt contained therein.
摘要:
An electrophotographic apparatus including a photosensitive member and a charging member disposed in contact with the photosensitive member; the photosensitive member being capable of being charged by applying a voltage to the charging member; wherein the ten-point mean surface roughness (Rz.sub.1) of the photosensitive member and the ten-point means surface roughness (Rz.sub.2) of the charging member satisfy the following relationships:______________________________________0.1 micron .ltoreq. Rz.sub.1 + Rz.sub.2 .ltoreq. 6.0 microns,0.05 micron .ltoreq. Rz.sub.1 .ltoreq. 5.0 microns, and0.05 micron .ltoreq. Rz.sub.2 .ltoreq.5.0 microns.______________________________________
摘要:
An image forming apparatus has a photosensitive member, a charging device, an image exposure device for exposing the photosensitive member to form a latent image, a developing device for developing the latent image with a toner to form a transferable toner image on the surface of the photosensitive member, a transfer device for transferring the toner image to a transfer material, and a cleaning device for removing a residual toner; the charging device, image exposure device, developing device, transfer device and cleaning device being disposed in the named order along the moving direction of the photosensitive member. The charging device includes an electroconductive member which directly contacts the photosensitive member surface to charge the photosensitive member surface. The electroconductive member forms a nip width with the photosensitive member of at least 0.5 mm and a load per unit contact area between the electroconductive member and photosensitive member is between 0.5-30 g/mm.sup.2. With respect to the longitudinal direction of the photosensitive member, the width of the photosensitive member surface cleaned by the cleaning device is equal to or greater than the width of the photosensitive member surface contacting the electroconductive member.
摘要翻译:图像形成装置具有感光构件,充电装置,用于曝光感光构件以形成潜像的图像曝光装置,用调色剂显影潜像的显影装置,以在该表面上形成可转印调色剂图像 感光构件,用于将调色剂图像转印到转印材料的转印装置,以及用于除去残留调色剂的清洁装置; 充电装置,图像曝光装置,显影装置,转印装置和清洁装置沿着感光构件的移动方向按照所述顺序设置。 充电装置包括直接接触感光构件表面以对感光构件表面充电的导电构件。 导电构件与感光构件形成至少0.5mm的压区宽度,并且导电构件和感光构件之间的每单位接触面积的负载为0.5-30g / mm 2。 关于感光构件的纵向方向,由清洁装置清洁的感光构件表面的宽度等于或大于与导电构件接触的感光构件表面的宽度。
摘要:
A storage element including: a storage layer; a magnetization fixed layer; and an insulating layer, wherein by injecting spin-polarized electrons in a laminating direction of a layered structure that includes the storage layer, the insulating layer, and the magnetization fixed layer, the orientation of magnetization of the storage layer changes and recording of information is performed on the storage layer, and an Fe film and a film that includes Ni are formed in order from an interface side that is in contact with the insulating layer, and a graded composition distribution of Ni and Fe is formed after heating on at least one of the storage layer and the magnetization fixed layer.
摘要:
Provided is a storage element including a storage layer that holds information according to a magnetization state of a magnetic body, a magnetization fixing layer that has magnetization serving as a reference of the information stored in the storage layer, and an insulation layer that is formed of a non-magnetic body disposed between the storage layer and the magnetization fixing layer. The information is stored by reversing the magnetization of the storage layer using spin torque magnetization reversal occurring with a current flowing in a lamination direction of a layer configuration of the storage layer, the insulation layer, and the magnetization fixing layer, and a size of the storage layer is less than a size in which a direction of the magnetization is simultaneously changed.
摘要:
There is disclosed a memory element including a layered structure including a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer; and an insulating layer provided between the memory layer. An electron that is spin-polarized is injected in a lamination direction of a layered structure, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, in regard to the insulating layer that comes into contact with the memory layer, and the other side layer with which the memory layer comes into contact at a side opposite to the insulating layer, at least an interface that comes into contact with the memory layer is formed of an oxide film, and the memory layer includes at least one of non-magnetic metal and oxide in addition to a Co—Fe—B magnetic layer.
摘要:
Disclosed herein is a storage element, including: a storage layer configured to retain information based on a magnetization state of a magnetic material; and a magnetization pinned layer configured to be provided for the storage layer with intermediary of a tunnel barrier layer, wherein the tunnel barrier layer has a thickness not less than or equal to 0.1 nm to not more than or equal to 0.6 nm and interface roughness less than 0.5 nm, and information is stored in the storage layer through change in direction of magnetization of the storage layer by applying a current in a stacking direction and injecting a spin-polarized electron.
摘要:
There is disclosed a memory element which includes a layered structure. The layered structure includes a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer having magnetization perpendicular to the film face; an insulating layer provided between the memory layer and the magnetization-fixed layer; and a cap layer provided at a face side, which is opposite to the insulating layer-side face, of the memory layer, in which an electron that is spin-polarized is injected in a lamination direction of the layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and at least a face, which comes into contact with the memory layer, of the cap layer is formed of a Ta film.
摘要:
A memory includes: a memory device that has a memory layer storing data as a magnetization state of a magnetic body and a magnetization fixed layer whose direction of magnetization is fixed through a nonmagnetic layer interposed between the memory layer and the magnetization fixed layer and stores the data in the memory layer by changing a magnetization direction of the memory layer when a write current flowing in a stacked direction of the memory layer and the magnetization fixed layer is applied; and a voltage control unit that supplies the write current configured by independent pulse trains of two or more to the memory device by using a write voltage that is configured by independent pulse trains of two or more.