摘要:
It is to provide a novel fungicide having high controlling effects on plant diseases particularly on wheat powdery mildew and cucumber gray mold, without ill effects on crops. A carbamate derivative represented by the general formula [I] {wherein X is a halogen atom, a C1-C6 alkyl group or the like, n is 0 or an integer of from 1 to 4, R1 is a C1-C6 alkyl group, R2 is a hydrogen atom, a C1-C6 alkyl group or the like, R3 is a hydrogen atom or a C1-C6 alkyl group, G is an oxygen atom, a sulfur atom or the like, Y is a hydrogen atom, a C1-C10 alkyl group, C2-C10 alkenyl group or the like, and Q is a hydrogen atom, a C1-C6 haloalkyl group, a phenyl group or the like} and an agricultural/horticultural fungicide containing the same as the active ingredient.
摘要翻译:提供一种对植物病害具有高度控制作用的杀真菌剂,特别是对小麦白粉病和黄瓜灰霉菌,对作物没有不良影响。由通式[I] {其中X为卤素原子, C1-C6烷基等,n为0或1〜4的整数,R 1为C1-C6烷基,R2为氢原子,C1-C6烷基或 R 3为氢原子或C 1 -C 6烷基,G为氧原子,硫原子等,Y为氢原子,C1-C10烷基,C2-C10烯基或 和Q为氢原子,C1-C6卤代烷基,苯基等}和含有与活性成分相同的农业/园艺用杀真菌剂。
摘要:
A phenylacetylene derivative represented by the formula [I]: {wherein X is a halogen atom, a C1-C6 alkyl group, a C2-C6 alkoxy group, a C2-C6 haloalkyl group, etc., n is 0 or an integer of from 1 to 4, R1 is a C1-C6 alkyl group, R2 is a hydrogen atom, a C1-C6 alkyl group, a C2-C6 alkynyl group, a C2-C6 alkynyl group, a C1-C6 alkoxy group, etc., A is a C1-C6 alkylene group which may be branched, G is an oxygen atom, a sulfur atom or a —NR3— group; R3 is a hydrogen atom or a C1-C6 alkyl group, and Y is a hydrogen atom, a C1-C10 alkyl group, said group may be substituted by a halogen atom, a hydroxyl group or a C1-C6 alkoxy group], a C2-C6 alkenyl group, etc.; and an agricultural/horticultural fungicide containing the same as the active ingredient.
摘要:
Biarylalkylenecarbamic acid derivative represented by general formula (I): [wherein Q is a phenyl group which may be substituted or the like, X is a halogen atom, a (C1-C6) alkyl group or the like, n is 0 or an integer of from 1 to 4, R1 is a (C1-C6) alkyl group or the like, R2 is a hydrogen atom, a (C1-C6) alkyl group or the like, A is a (C1-C7) alkylene group which may be branched, and G is an oxygen atom, a sulfur atom or a group —NR— (wherein R3 is a hydrogen atom or a (C1-C4) alkyl group)] and agricultural and horticultural fungicides. The agricultural and horticultural fungicides of the present invention are useful as agricultural and horticultural fungicides because they have high preventive effects on cucumber downy mildew, apple scab, wheat powdery mildew, rice blast, cucumber gray mold and rice sheath blight without damaging crops, and are excellent in residual effectiveness and rain-resistance.
摘要:
A method of crystallizing a silicon thin film, which enables uniforming the size of a crystalline grain of the silicon thin film, includes: a second process of stacking, on a substrate, a first gate electrode having a first reflectivity; a third process of stacking a second gate electrode on the first gate electrode, the second gate electrode having a second reflectivity lower than the first reflectivity and including a top face having an area smaller than an area of the top face of the first gate electrode; a fourth process of stacking a gate insulation film to cover a first region and a second region; a fifth process of stacking a noncrystalline silicon thin film on the stacked gate insulation film; and a sixth process of crystallizing the noncrystalline silicon thin film by irradiating the noncrystalline silicon thin film from above with a laser beam.
摘要:
A thin-film transistor used for a display device includes a gate electrode formed on an insulating substrate; a gate insulating film formed on the substrate so as to cover the gate electrode; a semiconductor layer composed of first semiconductor layer and second semiconductor layer formed on the gate insulating film; an ohmic contact layer formed on the semiconductor layer; and a source electrode and a drain electrode formed on the ohmic contact layer so as to be spaced from each other. The transistor further includes an etching stopper made of spin-on glass (SOG) on a channel-forming region of the semiconductor layer.
摘要:
A source electrode 105 which is connected to a portion of at least one semiconductor nanostructure 103 among a plurality of semiconductor nanostructures, a drain electrode 106 connected to another portion of the semiconductor nanostructure 103, and a gate electrode 102 capable of controlling electrical conduction of the semiconductor nanostructure 103 are included. The semiconductor nanostructures 103 include a low concentration region 108 having a relatively low doping concentration and a pair of high concentration regions 107 having a higher doping concentration than that of the low concentration region 108 and being connected to both ends of the low concentration region 108. The doping concentration of the high concentration regions 107 is 1×1019 cm−3 or more; the length of the low concentration region 108 is shorter than a length of the gate electrode 102 along a direction from the source electrode 105 to the drain electrode 106; and the length of the gate electrode 102 is shorter than the interspace between the source electrode 105 and the drain electrode 106.
摘要:
A variable gain amplifier circuit includes: an operational amplifier having a non-inverting input terminal applied with a predetermined voltage; a feedback resistor having one end connected to an inverting input terminal of the operational amplifier and the other end connected to an output terminal of the operational amplifier; and a variable resistor having one end applied with an input voltage and the other end connected to the inverting input terminal of the operational amplifier.
摘要:
In order to achieve an object to reduce a surge voltage and suppress noise generation, the present invention provides a DC-DC converter with a snubber circuit, which boosts a voltage Vi of a DC power supply. The snubber circuit includes: a series circuit connected to both ends of a smoothing capacitor Co and including a snubber capacitor Cs and a snubber resistor Rs; a snubber diode Ds1 connected to a node at which the snubber capacitor Cs and the snubber resistor Rs are connected, and to a node at which a reactor Lr1 and an additional winding 1b of a transformer T1 are connected; and a snubber diode Ds2 connected to the node at which the snubber capacitor Cs and the snubber resistor Rs are connected, and to a node at which a reactor Lr2 and an additional winding 2b of a transformer T2 are connected.
摘要:
According to a method of the present invention for manufacturing a semiconductor piece, at least two semiconductor layers (12) are first formed on a substrate (10) by stacking a sacrificial layer (11) and the semiconductor layer (12) on the substrate (10) in this order and repeating this stacking. Next, the semiconductor layers (12) are divided into pieces by etching part of the sacrificial layers (11) and part of the semiconductor layers (12). Then, the pieces are separated from the substrate by removing the sacrificial layers (11).
摘要:
A bipolar transistor 120 comprises a substrate 1, a intrinsic base region 11 and an extrinsic base region 12. The intrinsic base region 11 comprises a silicon buffer layer 109 comprised of silicon which is formed on the substrate 1, and a composition-ratio graded base layer 111 which is formed on the silicon buffer layer and comprises silicon and at least germanium and where a composition ratio of the germanium to the silicon varies in a thickness direction of the composition-ratio graded base layer 111. The extrinsic base region 12 comprises an extrinsic base formation layer 113 comprised of silicon which is formed on the substrate and adjacent to the silicon buffer layer. And the thickness of the extrinsic base formation layer 113 is not less than 40 nm.