公开(公告)号：US6049132A

公开(公告)日：2000-04-11

申请号：US893671

申请日：1997-07-11

申请人： Masanori Iwahashi ,  Makoto Mizuno ,  Koji Hanihara

发明人： Masanori Iwahashi ,  Makoto Mizuno ,  Koji Hanihara

IPC分类号： G02F1/1362 ,  H01L23/532 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： G02F1/136277 ,  G02F1/136227 ,  H01L23/53223 ,  H01L23/53242 ,  H01L23/53247 ,  H01L23/53257 ,  H01L2924/0002

摘要： In a semiconductor chip for Si chip based liquid crystal having insulating films and interconnection layers formed on a semiconductor substrate, a thin interconnection layer made of TiN/Ti having strong erosion resistance is formed on an uppermost interlayer insulating film having a flat surface to substantially expose the thin uppermost interconnection layer to the surface of the chip, the uppermost insulating film is covered with a protection film made of p-SiN and a thin insulating film having a mirror-like flat surface is formed on the uppermost interconnection layer.

摘要翻译： 在具有形成在半导体衬底上的绝缘膜和互连层的用于Si芯片的液晶的半导体芯片中，在具有平坦表面的最上层的层间绝缘膜上形成具有很强的耐腐蚀性的由TiN / Ti制成的薄互连层，以基本上露出 在芯片表面的最薄的最上层的互连层，最上层的绝缘膜被由p-SiN制成的保护膜覆盖，并且在最上层的互连层上形成了具有镜面平坦表面的薄绝缘膜。

公开(公告)号：US06266110B1

公开(公告)日：2001-07-24

申请号：US08901696

申请日：1997-07-28

申请人： Makoto Mizuno ,  Masanori Iwahashi ,  Toshihiro Shimizu ,  Masaaki Fujishima ,  Koji Hanihara ,  Itaru Tsuchiya ,  Yasuo Yagi

发明人： Makoto Mizuno ,  Masanori Iwahashi ,  Toshihiro Shimizu ,  Masaaki Fujishima ,  Koji Hanihara ,  Itaru Tsuchiya ,  Yasuo Yagi

IPC分类号： G02F11345

CPC分类号： H01L21/76819 ,  G02F1/136227 ,  G02F1/136277

摘要： An uppermost metal wiring layer is formed of titan Ti and titan nitride TiN formed thereon, on which tungsten W for filling a via hole can be deposited. The via hole is filled with W. The surface of a metal wiring layer below the uppermost metal wiring layer is covered with a low reflectivity film made of titan nitride. Thus, light incident on the surface of the semiconductor chip is prevented from reaching a substrate transistor within a semiconductor device and malfunctioning of the semiconductor device is prevented.

摘要翻译： 最上面的金属布线层由形成在其上的钛钛和氮化钛TiN形成，其上可以沉积填充通孔的钨W。 通孔用W填充。最上面的金属布线层下方的金属布线层的表面覆盖有由氮化钛制成的低反射率膜。 因此，防止入射在半导体芯片的表面上的光到达半导体器件内的衬底晶体管，并且防止了半导体器件的故障。

公开(公告)号：US5888900A

公开(公告)日：1999-03-30

申请号：US901697

申请日：1997-07-28

申请人： Makoto Mizuno ,  Toshihiro Shimizu ,  Masaaki Fujishima ,  Koji Hanihara ,  Itaru Tsuchiya ,  Yasuo Yagi

发明人： Makoto Mizuno ,  Toshihiro Shimizu ,  Masaaki Fujishima ,  Koji Hanihara ,  Itaru Tsuchiya ,  Yasuo Yagi

IPC分类号： H01L21/3105 ,  H01L21/768 ,  H01L21/4763

CPC分类号： H01L21/31053 ,  H01L21/76819 ,  Y10S438/926

摘要： A method for manufacturing semiconductor device is provided, this method comprises the steps of: depositing a metal film for forming wirings on a substrate; forming a wiring layer, wherein dummy wiring is inserted between wiring space where the dummy wiring can be inserted, and wiring space, where the dummy wiring cannot be inserted, is reduced by widening wiring pattern facing the wiring space; forming an interlayer insulating film on said wiring layer; and flattening surface of the interlayer insulating film. The film can be flattened by a CMP method or by an etchback of entire surface of the film. It is possible to flatten the surface of the semiconductor device cost-effectively and precisely.

摘要翻译： 提供一种制造半导体器件的方法，该方法包括以下步骤：在衬底上沉积用于形成布线的金属膜; 形成布线层，其中虚拟布线插入在可插入虚拟布线的布线空间之间，并且通过加宽面向布线空间的布线图案来减少虚拟布线不能插入的布线空间; 在所述布线层上形成层间绝缘膜; 和层间绝缘膜的平坦化表面。 该膜可以通过CMP方法或通过膜的整个表面的回蚀而变平。 可以经济高效地精确地使半导体器件的表面平坦化。

公开(公告)号：US08476138B2

公开(公告)日：2013-07-02

申请号：US13150768

申请日：2011-06-01

申请人： Hiraku Chakihara ,  Kousuke Okuyama ,  Masahiro Moniwa ,  Makoto Mizuno ,  Keiji Okamoto ,  Mitsuhiro Noguchi ,  Tadanori Yoshida ,  Yasuhiko Takahshi ,  Akio Nishida

发明人： Hiraku Chakihara ,  Kousuke Okuyama ,  Masahiro Moniwa ,  Makoto Mizuno ,  Keiji Okamoto ,  Mitsuhiro Noguchi ,  Tadanori Yoshida ,  Yasuhiko Takahshi ,  Akio Nishida

IPC分类号： H01L21/336 ,  H01L21/8244 ,  H01L21/8239

CPC分类号： H01L29/6675 ,  H01L21/823885 ,  H01L27/105 ,  H01L27/11 ,  H01L27/1104 ,  H01L27/1116 ,  H01L29/7833 ,  H01L29/78642

摘要： Vertical MISFETs are formed over drive MISFETs and transfer MISFETs. The vertical MISFETs comprise rectangular pillar laminated bodies each formed by laminating a lower semiconductor layer (drain), an intermediate semiconductor layer, and an upper semiconductor layer (source), and gate electrodes formed on corresponding side walls of the laminated bodies with gate insulating films interposed therebetween. In each vertical MISFET, the lower semiconductor layer constitutes a drain, the intermediate semiconductor layer constitutes a substrate (channel region), and the upper semiconductor layer constitutes a source. The lower semiconductor layer, the intermediate semiconductor layer and the upper semiconductor layer are each comprised of a silicon film. The lower semiconductor layer and the upper semiconductor layer are doped with a p type and constituted of a p type silicon film.

公开(公告)号：US08174901B2

公开(公告)日：2012-05-08

申请号：US12721553

申请日：2010-03-10

申请人： Ken Matsubara ,  Hideo Kasai ,  Kenji Kawada ,  Makoto Mizuno

发明人： Ken Matsubara ,  Hideo Kasai ,  Kenji Kawada ,  Makoto Mizuno

IPC分类号： G11C11/34

CPC分类号： G11C7/02 ,  G11C16/06 ,  G11C16/32 ,  G11C16/3418

摘要： This invention is to reduce the number of memory gate drivers, while lessening the number of times of disturb occurrence in a memory array configuration that implements writing in small byte units. A memory array comprises a plurality of sub-arrays, MG transfers, SL drivers, and CG drivers. Each sub-array includes a plurality of memory gate lines, control gate lines, source lines, and bit lines. Memory cells are arranged in positions of intersections of these lines. The control gate lines, CG drivers, source lines, and SL drivers are common to the sub-arrays, whereas the memory gate lines and MG buffer circuits are provided for each sub-array. Thereby, the units in which data is written are decreased and adverse effects of disturb are reduced without increasing the circuit size of the memory array.

摘要翻译： 本发明是减少存储器栅极驱动器的数量，同时减少以小字节为单位实现写入的存储器阵列配置中的干扰发生次数。 存储器阵列包括多个子阵列，MG传输，SL驱动器和CG驱动器。 每个子阵列包括多个存储器栅极线，控制栅极线，源极线和位线。 存储单元布置在这些线的相交位置。 控制栅极线，CG驱动器，源极线和SL驱动器对于子阵列是共同的，而为每个子阵列提供存储器栅极线和MG缓冲电路。 因此，数据写入的单元减少，并且不增加存储器阵列的电路尺寸的同时降低了干扰的不利影响。

公开(公告)号：US20110208904A1

公开(公告)日：2011-08-25

申请号：US13099720

申请日：2011-05-03

申请人： Masamichi Fujito ,  Makoto Mizuno ,  Takahiro Yokoyama ,  Kenji Kawada ,  Takashi Iwase ,  Yasunobu Aoki ,  Takashi Kurafuji ,  Tomohiro Uchiyama ,  Shuichi Sato ,  Yuji Uji

发明人： Masamichi Fujito ,  Makoto Mizuno ,  Takahiro Yokoyama ,  Kenji Kawada ,  Takashi Iwase ,  Yasunobu Aoki ,  Takashi Kurafuji ,  Tomohiro Uchiyama ,  Shuichi Sato ,  Yuji Uji

IPC分类号： G06F12/00

CPC分类号： G11C7/04 ,  G11C16/0441 ,  G11C16/10 ,  G11C16/28

摘要： The semiconductor device includes a nonvolatile memory, having a memory array containing 1-bit twin cells, each composed of electrically rewritable first and second storage devices, the first and second storage devices holding binary data according to difference of their threshold voltages, and having different retention characteristics depending on difference of the binary data thereof; a read circuit for differentially amplifying complementary data output from the first and second storage devices of the twin cell selected for read, and judging information stored in the twin cell; and a control circuit. Two memory cells constituting a twin cell are arranged to hold different data. Therefore, even when the retention performance of one memory cell deteriorates, the difference between data held by the two memory cells can be maintained. Hence, differential amplification of such difference enables acquisition of proper stored information. Thus, retention performance of an electrically rewritable nonvolatile memory cell is improved.

摘要翻译： 半导体器件包括非易失性存储器，具有包含1比特双胞格的存储器阵列，每个存储器阵列由电可重写的第一和第二存储器件组成，第一和第二存储器件根据其阈值电压的差异保持二进制数据，并且具有不同的 保留特性取决于其二进制数据的差异; 用于差分放大从被选择读取的双胞胎的第一和第二存储装置输出的互补数据的读取电路，以及判断存储在双胞胎中的信息; 和控制电路。 布置构成双胞胎的两个存储单元以保存不同的数据。 因此，即使一个存储单元的保持性能劣化，也能够维持由两个存储单元保持的数据之间的差异。 因此，这种差异的差分放大使得能够获得正确的存储信息。 因此，提高了电可重写非易失性存储单元的保持性能。

公开(公告)号：US20100202205A1

公开(公告)日：2010-08-12

申请号：US12764090

申请日：2010-04-20

申请人： Fumitoshi Ito ,  Yoshiyuki Kawashima ,  Takeshi Sakai ,  Yasushi Ishii ,  Yasuhiro Kanamaru ,  Takashi Hashimoto ,  Makoto Mizuno ,  Kousuke Okuyama ,  Yukiko Manabe

发明人： Fumitoshi Ito ,  Yoshiyuki Kawashima ,  Takeshi Sakai ,  Yasushi Ishii ,  Yasuhiro Kanamaru ,  Takashi Hashimoto ,  Makoto Mizuno ,  Kousuke Okuyama ,  Yukiko Manabe

IPC分类号： G11C16/04 ,  H01L29/792

CPC分类号： H01L27/11568 ,  G11C16/0466 ,  H01L21/28282 ,  H01L27/115 ,  H01L29/42344 ,  H01L29/66833 ,  H01L29/792

摘要： The degree of integration and the number of rewriting of a semiconductor device having a nonvolatile memory element are improved. A first MONOS nonvolatile-memory-element and a second MONOS nonvolatile-memory-element having a large gate width compared with the first MONOS nonvolatile-memory-element are mounted together on the same substrate, and the first MONOS nonvolatile-memory-element is used for storing program data which is scarcely rewritten, and the second MONOS nonvolatile-memory-element is used for storing processed data which is frequently rewritten.

摘要翻译： 改善了具有非易失性存储元件的半导体器件的积分度和重写次数。 与第一MONOS非易失性存储元件相比，具有大门宽度的第一MONOS非易失性存储元件和第二MONOS非易失性存储元件一起安装在同一衬底上，并且第一MONOS非易失性存储元件是 用于存储几乎不被重写的程序数据，并且第二MONOS非易失性存储元件用于存储频繁重写的处理数据。

公开(公告)号：US20090021847A1

公开(公告)日：2009-01-22

申请号：US12171644

申请日：2008-07-11

申请人： Ryo Nawata ,  Makoto Mizuno ,  Shigeyuki Uzawa

发明人： Ryo Nawata ,  Makoto Mizuno ,  Shigeyuki Uzawa

IPC分类号： G02B7/00

CPC分类号： G02B7/005 ,  G02B7/1827 ,  G03F7/70258 ,  G03F7/70825

摘要： The apparatus includes a holder holding an optical element, a back plate supporting the optical element via the holder, a mechanism moving the optical element in a six-degree-of-freedom, a base plate supporting the back plate via the mechanism, and six displacement sensors disposed on the base plate and measuring displacement amounts of different points on the optical element. The displacement sensors includes three ones measuring them in a first direction, one measuring it in a second direction, and two ones measuring them in a third direction. The apparatus further includes a transformation processor transforming the six measured displacement amounts into displacement amounts of the optical element in the six-degree-of-freedom, a calibration processor calibrating the transformed displacement amounts, and a controller outputting command values to the displacing mechanism based on differences between the calibrated displacement amounts and target displacement amounts of the optical element.

摘要翻译： 该装置包括保持光学元件的保持器，经由保持器支撑光学元件的背板，以六自由度移动光学元件的机构，经由机构支撑背板的基板，以及六个 位移传感器设置在基板上并测量光学元件上的不同点的位移量。 位移传感器包括在第一方向上测量它们的三个位移传感器，一个在第二方向上测量它们，并且在第三方向上测量它们的两个。 该装置还包括变换处理器，将六个测量的位移量变换为六自由度中的光学元件的位移量，校准经变换的位移量的校准处理器，以及基于位移机构输出命令值的控制器 在校准位移量和光学元件的目标位移量之间的差异。

公开(公告)号：US20080176909A1

公开(公告)日：2008-07-24

申请号：US12074778

申请日：2008-03-06

申请人： Masatsugu Horiuchi ,  Masaru Iwai ,  Toshio Sada ,  Makoto Mizuno

发明人： Masatsugu Horiuchi ,  Masaru Iwai ,  Toshio Sada ,  Makoto Mizuno

IPC分类号： A61K31/4422 ,  A61P9/12 ,  A61P9/10

CPC分类号： A61K31/4178 ,  A61K31/4422 ,  A61K31/455 ,  A61K45/06 ,  A61K2300/00

摘要： Methods for the prophylaxis and/or treatment of arteriosclerosis, hypertension, restenosis, heart diseases, renal diseases and cerebrovascular diseases by administering a pharmaceutical composition comprising the following active ingredients: (A) an angiotensin II receptor antagonist selected from the group consisting of a compound having a formula (I), a pharmacologically acceptable ester thereof and a pharmacologically acceptable salt thereof (for example, olmesartan medoxomil), the compound having the following formula: and (B) a calcium channel blocker selected from the group consisting of a 1,4-dihydropyridine compound and a pharmacologically acceptable salt thereof (for example, azelnidipine), wherein the composition does not include the combination of olmesartan medoxomil and amlodipine or amlodipine besylate.

摘要翻译： 通过施用包含以下活性成分的药物组合物来预防和/或治疗动脉硬化，高血压，再狭窄，心脏病，肾脏疾病和脑血管疾病的方法：（A）选自下列化合物的血管紧张素II受体拮抗剂 具有式（I），其药理学上可接受的酯和其可药用盐（例如奥美沙坦酯），具有下式的化合物和（B）选自以下的钙通道阻断剂：1， 4-二氢吡啶化合物及其药理学上可接受的盐（例如，氮卓尼地平），其中该组合物不包括奥美沙坦酯和氨氯地平或苯磺酸氨氯地平的组合。

公开(公告)号：US07110089B2

公开(公告)日：2006-09-19

申请号：US10799424

申请日：2004-03-11

申请人： Makoto Mizuno

发明人： Makoto Mizuno

IPC分类号： G03B27/42

CPC分类号： G03F7/70825 ,  G02B7/023 ,  G02B7/182 ,  G02B7/1824 ,  Y10T74/20006 ,  Y10T74/20564

摘要： The present invention provides a drive mechanism having a high rigidity and capable of performing fine adjustment in 6-axis directions of an optical element such as a mirror or a lens, or a support member for supporting the optical element, in optical equipment such as an exposure device. The drive mechanism has such a feature that three monolithic planar 3-joint or 4-joint link mechanisms are each arranged between a movable portion and a stationary portion through the intermediation of a bearing having at least one degree of freedom of rotation.

摘要翻译： 本发明提供一种驱动机构，其具有高刚性并且能够在诸如反射镜或透镜的光学元件或用于支撑光学元件的支撑构件的6轴方向上进行微调， 曝光装置 驱动机构具有这样的特征，即通过具有至少一个旋转自由度的轴承，可以在可动部分和固定部分之间设置三个整体平面3关节或4关节连杆机构。