摘要:
A semiconductor device in which a semiconductor chip 1 is bonded by a metal bond 2 to one surface of a heat sink 4 formed of a material with a thermal expansion coefficient is close to he semiconductor chip 1, the heat sink 4 is glued to a stiffener with a silicon adhesive 5 with an elastic modulus of 10 MPa or less, a TAB tape 9 is glued to the stiffener 3 with an epoxy adhesive 6, and the semiconductor chip 1 is sealed with an epoxy sealing resin 8 with an elastic modulus of 10 GPa or more for protection from outside.
摘要:
A semiconductor device in which a semiconductor chip 1 is bonded by a metal bond 2 to one surface of a heat sink 4 formed of a material with a thermal expansion coefficient is close to he semiconductor chip 1, the heat sink 4 is glued to a stiffener with a silicon adhesive 5 with an elastic modulus of 10 MPa or less, a TAB tape 9 is glued to the stiffener 3 with an epoxy adhesive 6, and the semiconductor chip 1 is sealed with an epoxy sealing resin 8 with an elastic modulus of 10 GPa or more for protection from outside.
摘要:
A semiconductor device in which a semiconductor chip 1 is bonded by a metal bond 2 to one surface of a heat sink 4 formed of a material with a thermal expansion coefficient is close to the semiconductor chip 1, the heat sink 4 is glued to a stiffener with a silicon adhesive 5 with an elastic modulus of 10 MPa or less, a TAB tape 9 is glued to the stiffener 3 with an epoxy adhesive 6, and the semiconductor chip 1 is sealed with an epoxy sealing resin 8 with an elastic modulus of 10 GPa or more for protection from outside.
摘要:
A method of producing a leadframe for use in semiconductor devices, comprises the steps of forming a space between leads 1a and 1b which are to be overlapped and welded each other, and welding the leads at a region including the space and melting and cutting off one of the leads. In one of the leads which is melted, cohesion and separation of molten metal occur in the region around the space. As a result, unnecessary portions such as an outer frame used for positioning can be cut off at the same time when the leads are connected by welding. Thus, high precision positioning of a plurality of element leadframes as well as high assembling productivity are achieved.
摘要:
A semiconductor device having inner leads secured via insulating adhesive films to the principal surface of a semiconductor chip and electrically connected to the respective external terminals of the semiconductor chip. The semiconductor device that can be about the size of the chip is so configured that an outer lead is continuously extended from each inner lead up to the rear surface opposite to the principal surface of the semiconductor chip in order to hold the leads and an external device in conduction.
摘要:
A semiconductor device having inner leads secured via insulating adhesive films to the principal surface of a semiconductor chip and electrically connected to the respective external terminals of the semiconductor chip. The semiconductor device that can be about the size of the chip is so configured that an outer lead is continuously extended from each inner lead up to the rear surface opposite to the principal surface of the semiconductor chip in order to hold the leads and an external device in conduction.
摘要:
A method of producing a leadframe for use in semiconductor devices, comprises the steps of forming a space between leads 1a and 1b which are to be overlapped and welded each other, and welding the leads at a region including the space and melting and cutting off one of the leads. In one of the leads which is melted, cohesion and separation of molten metal occur in the region around the space. As a result, unnecessary portions such as an outer frame used for positioning can be cut off at the same time when the leads are connected by welding. Thus, high precision positioning of a plurality of element leadframes as well as high assembling productivity are achieved.
摘要:
A semiconductor device having inner leads secured via insulating adhesive films to the principal surface of a semiconductor chip and electrically connected to the respective external terminals of the semiconductor chip. The semiconductor device that can be about the size of the chip is so configured that an outer lead is continuously extended from each inner lead up to the rear surface opposite to the principal surface of the semiconductor chip in order to hold the leads and an external device in conduction.
摘要:
A packaged semiconductor device has a semiconductor chip and leads formed over the chip with an electrically insulating film interposed therebetween and a packaging material for sealing the chip and the inner lead portions of the leads. The electrically insulating film has such an area as to provide a peripheral portion not covered by parts of the inner lead portions of the leads for strengthening adherence of the electrically insulating film to the packaging material and to the chip. The electrically insulating film has a thickness substantially in a range from 80 .mu.m to 200 .mu.m for absorbing stress which may be produced in the packaged semiconductor device when subjected to variations of the ambient temperature. A stress absorption film may be formed between the electrically insulating film and the semiconductor chip for absorbing stress which may be produced in the packaged semiconductor device when subjected to variations of the ambient temperature.
摘要:
A packaged semiconductor device has a semiconductor chip and leads formed over the chip with an electrically insulating film interposed therebetween and a packaging material for sealing the chip and the inner lead portions of the leads. The electrically insulating film has such an area as to provide a peripheral portion not covered by parts of the inner lead portions of the leads for strengthening adherence of the electrically insulating film to the packaging material and to the chip. The electrically insulating film has a thickness substantially in a range from 80 .mu.m to 200 .mu.m for absorbing stress which may be produced in the packaged semiconductor device when subjected to variations of the ambient temperature. A stress absorption film may be formed between the electrically insulating film and the semiconductor chip for absorbing stress which may be produced in the packaged semiconductor device when subjected to variations of the ambient temperature.