公开(公告)号：US4914488A

公开(公告)日：1990-04-03

申请号：US189179

申请日：1988-05-02

申请人： Masao Yamane ,  Tomoyoshi Mishima ,  Shigeo Goto ,  Susumu Takahashi ,  Makoto Morioka

发明人： Masao Yamane ,  Tomoyoshi Mishima ,  Shigeo Goto ,  Susumu Takahashi ,  Makoto Morioka

IPC分类号： H01L21/22 ,  H01L21/335 ,  H01L29/15 ,  H01L29/778

CPC分类号： H01L29/66462 ,  H01L21/22 ,  H01L29/155 ,  H01L29/7783 ,  H01L29/7787

摘要： A compound semiconductor structure in the form of a superlattice film with effectively graded average composition, comprising an alternating lamination of two kinds of layers of different composition to form pairs of layers, the ratio of the thickness of one layer to the thickness of the other in said pairs of layers being gradually varied in the direction of thickness throughout successive pairs, thereby the average composition being effectively graded throughout the pairs. In a hetero-junction field effect transistor, the layer of effectively graded composition is used between a semiconductor layer making low resistance contact with a current-supplying electrode and a semiconductor layer where a two dimensional channel is to be formed. In case of AlGaAs/GaAs system, the Al composition is varied. When the superlattice film is heat-treated, Al in the AlGaAs layer diffuses into the GaAs layer, yielding a film with actually smoothly graded Al mole fraction.

摘要翻译： 具有有效分级平均组成的超晶格膜形式的化合物半导体结构，包括两种不同组成的层的交替叠层以形成一对层，一层的厚度与另一层的厚度之比 所述成对的层在整个连续的对中在厚度方向上逐渐变化，从而平均组成在整个对中有效地分级。 在异质结场效应晶体管中，在与供电电极进行低电阻接触的半导体层与要形成二维沟道的半导体层之间使用有效梯度组成的层。 在AlGaAs / GaAs系统的情况下，Al组成是变化的。 当超晶格膜被热处理时，AlGaAs层中的Al扩散到GaAs层中，产生具有平滑分级的Al摩尔分数的膜。

公开(公告)号：US5381027A

公开(公告)日：1995-01-10

申请号：US134622

申请日：1993-10-12

申请人： Toshiyuki Usagawa ,  Kenji Hiruma ,  Masahiko Kawata ,  Shigeo Goto ,  Katsuhiko Mitani ,  Masao Yamane ,  Susumu Takahashi ,  Tomonori Tanoue ,  Yoshinori Imamura

发明人： Toshiyuki Usagawa ,  Kenji Hiruma ,  Masahiko Kawata ,  Shigeo Goto ,  Katsuhiko Mitani ,  Masao Yamane ,  Susumu Takahashi ,  Tomonori Tanoue ,  Yoshinori Imamura

IPC分类号： H01L21/18 ,  H01L21/285 ,  H01L21/331 ,  H01L21/335 ,  H01L27/06 ,  H01L29/737 ,  H01L29/778 ,  H01L29/804 ,  H01L29/784

CPC分类号： H01L29/66318 ,  H01L21/182 ,  H01L21/28587 ,  H01L27/0605 ,  H01L29/66462 ,  H01L29/7373 ,  H01L29/7787

摘要： This invention discloses a heterojunction type field effect transistor such as 2DEG-FET and a heterojunction type bipolar transistor such as 2DEG-HBT. The former is fabricated by applying to the formation of its source and drain regions a technique which causes the disorder of the heterojunction by intoduction of an impurity such as by ion implantation or a technique which causes the disorder of the heterojunction by forming a film made of at least one kind of material selected from insulators, metals and semiconductors which have a different linear coefficient of thermal expansion from that of the material of a semiconductor substrate on the heterojunction semiconductor region which is to be disordered. The latter is fabricated by applying either of the techniques described above to a base ohmic contact region. These semiconductor devices can reduce the source-gate resistance and the parasitic base resistance. The invention discloses also the structure of the ohmic contact layer which has a trench on the surface thereof and is particularly effective for reducing the source-gate parasitic resistance.

摘要翻译： 本发明公开了一种异质结型场效应晶体管，例如2DEG-FET和异质结型双极晶体管，例如2DEG-HBT。 前者通过应用于其源极和漏极区域的形成来制造通过诸如通过离子注入引起杂质的异质结的紊乱或通过形成由 选自绝缘体，金属和半导体的至少一种材料，其具有不同于待混杂的异质结半导体区域上的半导体衬底的材料的线性热膨胀系数。 后者通过将上述技术中的任一种应用于基极欧姆接触区域来制造。 这些半导体器件可以降低源极栅极电阻和寄生基极电阻。 本发明还公开了欧姆接触层的结构，其在其表面上具有沟槽，并且对于减小源极寄生电阻特别有效。

公开(公告)号：US5258631A

公开(公告)日：1993-11-02

申请号：US884878

申请日：1992-05-18

申请人： Toshiyuki Usagawa ,  Kenji Hiruma ,  Masahiko Kawata ,  Shigeo Goto ,  Katsuhiko Mitani ,  Masao Yamane ,  Susumu Takahashi ,  Tomonori Tanoue ,  Yoshinori Imamura

发明人： Toshiyuki Usagawa ,  Kenji Hiruma ,  Masahiko Kawata ,  Shigeo Goto ,  Katsuhiko Mitani ,  Masao Yamane ,  Susumu Takahashi ,  Tomonori Tanoue ,  Yoshinori Imamura

IPC分类号： H01L21/18 ,  H01L21/285 ,  H01L21/331 ,  H01L21/335 ,  H01L27/06 ,  H01L29/737 ,  H01L29/778 ,  H01L29/06 ,  H01L29/167 ,  H01L29/30 ,  H01L31/072

CPC分类号： H01L29/66318 ,  H01L21/182 ,  H01L21/28587 ,  H01L27/0605 ,  H01L29/66462 ,  H01L29/7373 ,  H01L29/7787

摘要： This invention discloses a heterojunction type field effect transistor such as 2DEG-FET and a heterojunction type bipolar transistor such as 2DEG-HBT. The former is fabricated by applying to the formation of its source and drain regions a technique which causes the disorder of the heterojunction by introduction of an impurity such as by ion implantation or a technique which causes the disorder of the heterojunction by forming a film made of at least one kind of material selected from insulators, metals and semiconductors which have a different linear coefficient of thermal expansion from that of the material of a semiconductor substrate on the heterojunction semiconductor region which is to be disordered. The latter is fabricated by applying either of the techniques described above to a base ohmic contact region. These semiconductor devices can reduce the source-gate resistance and the parasitic base resistance. The invention discloses also the structure of the ohmic contact layer which has a trench on the surface thereof and is particularly effective for reducing the source-gate parasitic resistance.

摘要翻译： 本发明公开了一种异质结型场效应晶体管，例如2DEG-FET和异质结型双极晶体管，例如2DEG-HBT。 前者通过应用其源极和漏极区域的形成来制造通过引入杂质例如通过离子注入引起异质结的紊乱的技术或通过形成由 选自绝缘体，金属和半导体的至少一种材料，其具有不同于待混杂的异质结半导体区域上的半导体衬底的材料的线性热膨胀系数。 后者通过将上述技术中的任一种应用于基极欧姆接触区域来制造。 这些半导体器件可以降低源极栅极电阻和寄生基极电阻。 本发明还公开了欧姆接触层的结构，其在其表面上具有沟槽，并且对于减小源极寄生电阻特别有效。

公开(公告)号：US5668402A

公开(公告)日：1997-09-16

申请号：US66635

申请日：1993-05-24

申请人： Kazuhiro Mochizuki ,  Shigeo Goto ,  Chushirou Kusano ,  Masahiko Kawata ,  Hiroshi Masuda ,  Katsuhiko Mitani ,  Susumu Takahashi

发明人： Kazuhiro Mochizuki ,  Shigeo Goto ,  Chushirou Kusano ,  Masahiko Kawata ,  Hiroshi Masuda ,  Katsuhiko Mitani ,  Susumu Takahashi

IPC分类号： H01L29/73 ,  A61F7/02 ,  H01L21/20 ,  H01L21/331 ,  H01L21/338 ,  H01L29/04 ,  H01L29/205 ,  H01L29/737 ,  H01L29/812

CPC分类号： H01L29/045 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/02609 ,  A61F2007/0265

摘要： A semiconductor device comprises a semiconductor substrate formed by a first single crystalline semiconductor material and semiconductor layers formed on the semiconductor substrate by a second single crystalline semiconductor material doped with an element which can easily surface segregate. The surface of the semiconductor substrate is formed of a crystalline plane substantially equivalent to a facet plane which is formed on the surface of the second single crystalline semiconductor material if the second single crystalline semiconductor material is epitaxially grown with being doped with the element on a (100) plane of the first single crystalline semiconductor material.

摘要翻译： 半导体器件包括由第一单晶半导体材料形成的半导体衬底和通过掺杂有易于表面分离的元件的第二单晶半导体材料形成在半导体衬底上的半导体层。 半导体衬底的表面由与第二单晶半导体材料的表面上形成的小平面基本相同的晶面形成，如果第二单晶半导体材料被外延生长，在第 100）平面的第一单晶半导体材料。

公开(公告)号：US08648896B2

公开(公告)日：2014-02-11

申请号：US12653928

申请日：2009-12-17

申请人： Susumu Takahashi

发明人： Susumu Takahashi

IPC分类号： H04N7/18

CPC分类号： G02B23/2415 ,  A61B1/00193 ,  A61B1/042

摘要： A stereoscopic optical system includes, at a distal end of an insertion part of an endoscope, a two-path forming optical system for forming two paths of rays involving a parallax, an image forming optical system for forming images out of light travelling along the respective paths of rays in the two-path forming optical system onto a common region, and an image sensor arranged at an image forming position of the image forming optical system. The stereoscopic optical system is further provided with a time-division path switching means that is capable of switching between the two paths of rays in a time-division manner so that only light coming from either one of the two paths of rays formed by the two-path forming optical system enters the image forming optical system.

摘要翻译： 立体光学系统在内窥镜的插入部的前端包括用于形成涉及视差的两条光线路的双路形成光学系统，用于形成沿着相应的光线行进的光的图像的成像光学系统 将双路形成光学系统中的光线路径映射到公共区域，以及布置在图像形成光学系统的图像形成位置处的图像传感器。 立体光学系统还具有时分路径切换装置，该时分路径切换装置能够以时分方式切换两条光线之间的路径，使得只有来自由两个光线形成的两条光线中的任一条光线 路径形成光学系统进入成像光学系统。

公开(公告)号：US08547424B2

公开(公告)日：2013-10-01

申请号：US12254479

申请日：2008-10-20

申请人： Hiroshi Ishii ,  Seiji Iwasaki ,  Masahiro Kawauchi ,  Hideaki Ishihara ,  Susumu Takahashi ,  Shinichi Nakamura ,  Azusa Noguchi ,  Hideyasu Takato ,  Tsutomu Sasamoto

发明人： Hiroshi Ishii ,  Seiji Iwasaki ,  Masahiro Kawauchi ,  Hideaki Ishihara ,  Susumu Takahashi ,  Shinichi Nakamura ,  Azusa Noguchi ,  Hideyasu Takato ,  Tsutomu Sasamoto

IPC分类号： A61B1/06 ,  A61B1/04

CPC分类号： G02B23/26 ,  A61B1/00096 ,  A61B1/00186 ,  A61B1/043 ,  A61B1/045 ,  A61B1/063 ,  A61B1/0638 ,  A61B1/0646 ,  A61B5/0071 ,  A61B5/0084 ,  G02B23/2438 ,  G02B23/2469 ,  G03B9/02 ,  G03B15/05 ,  G03B2215/0564 ,  G03B2215/0575

摘要： An endoscope system has a light source apparatus and an endoscope including an illumination optical system and an objective optical system. At least the objective optical system of the endoscope is provided with an adjustable diaphragm, and in a light path in one of the light source apparatus, the illumination optical system, and the objective optical system, an insertable/retractable filter for observation for special light is provided. The adjustable diaphragm performs a closing operation or an opening operation only when the filter for observation for special light is inserted into the light path.

摘要翻译： 内窥镜系统具有包括照明光学系统和物镜光学系统的光源装置和内窥镜。 至少内窥镜的物镜光学系统设置有可调节光阑，并且在光源装置，照明光学系统和物镜光学系统之一中的光路中，用于观察特殊光的可插入/可缩回过滤器 被提供。 仅当用于观察特殊光的过滤器插入光路中时，可调节膜片才执行关闭操作或打开操作。

公开(公告)号：US08422327B2

公开(公告)日：2013-04-16

申请号：US12801124

申请日：2010-05-24

申请人： Kazuhiro Teramoto ,  Hiroki Fujisawa ,  Susumu Takahashi

发明人： Kazuhiro Teramoto ,  Hiroki Fujisawa ,  Susumu Takahashi

IPC分类号： G11C17/18

CPC分类号： G11C29/02 ,  G11C17/165 ,  G11C29/027 ,  G11C29/785 ,  G11C29/846

摘要： To provide a semiconductor device including a pair of antifuse elements at either a high level or a low level, an OR circuit that outputs different logic information for a case that at least one of the antifuse elements is at a high level and a case that both of the antifuse elements are at a low level, and an exclusive OR circuit that outputs different logic information for a case that the logic states are different from each other and a case that they are same as each other.

摘要翻译： 为了提供一种包括高电平或低电平的一对反熔丝元件的半导体器件，OR电路为至少一个反熔丝元件处于高电平的情况下输出不同的逻辑信息，以及两个 的反熔丝元件为低电平，异或电路输出逻辑状态彼此不同的情况下的不同的逻辑信息以及彼此相同的情况。

公开(公告)号：US20110240095A1

公开(公告)日：2011-10-06

申请号：US12998677

申请日：2009-11-19

申请人： Luis Manuel Murillo-Mora ,  Hideaki Honma ,  Kohei Moronaga ,  Susumu Takahashi

发明人： Luis Manuel Murillo-Mora ,  Hideaki Honma ,  Kohei Moronaga ,  Susumu Takahashi

IPC分类号： H01L31/0232 ,  H01J1/62 ,  G02B5/08

CPC分类号： H01L31/056 ,  H01L31/0547 ,  H01L33/60 ,  Y02E10/52

摘要： A light reuse sheet includes a reflective surface having an uneven configuration, the reflective surface in order to reflect light in a specific direction so as to cause light to be incident to a solar battery cell, the light being incident to a solar battery module, or in order to exit light in a specific direction by reflecting the light, the light being emitted from a light emitting element of a light source module. The reflective surface satisfies the following formula where a length in a horizontal direction of a solar battery cell or a light emitting element is represented by Lx; a length in a vertical direction of a solar battery cell or a light emitting element is represented by Ly; an angle formed between a direction of an uneven configuration of the reflective surface and an edge in a horizontal direction of the solar battery cell or the light emitting element is represented by φ; and maximum width of light which passes between adjacent solar battery cells and which is reflected by a light reuse sheet and is incident to a light receiving face of a solar battery cell or maximum width of light which is not emitted from a light emitting element in a specific direction and which exits in a specific direction by reflecting the light at a light reuse sheet is represented by A.  f  φ = 0 = Ly · cos   φ - Lx · sin   φ - A  ( cos 2  φ - sin 2   φ ) ( Formula   1 )

摘要翻译： 光再利用片材包括具有不均匀构造的反射表面，反射表面以反射特定方向的光，以使光入射到太阳能电池单元，该光入射到太阳能电池模块，或 为了通过反射光而在特定方向上退出光，光从光源模块的发光元件发射。 反射面满足下式，其中太阳能电池单元或发光元件的水平方向上的长度由Lx表示; 太阳能电池单元或发光元件的垂直方向的长度由Ly表示; 在太阳能电池单元或发光元件的反射表面的不均匀构造的方向与水平方向的边缘之间形成的角度由＆phgr; 和相邻的太阳能电池单元之间通过并由光再利用片材反射并入射到太阳能电池单元的光接收面的光的最大宽度或不从发光元件发射的最大宽度的光 特定方向，通过将光反射在光再利用片材上而沿特定方向退出。 = 0 = Ly·cosθ＆phgr - sin;; - 公式（公式1）

公开(公告)号：US07854521B2

公开(公告)日：2010-12-21

申请号：US11644147

申请日：2006-12-22

申请人： Susumu Takahashi

发明人： Susumu Takahashi

IPC分类号： G03B21/00

CPC分类号： G03B21/26 ,  G03B21/005

摘要： There is provided a projector having a point light source disposed to an edge of an optical fiber for transmitting exciting light and including a fluorescent illuminant for emitting fluorescence by being exited by the exiting light, a light collecting optical system for collecting the fluorescence emitted from the point light source, a reflective display device for reflecting the fluorescence collected by the light collecting optical system and overlapping the fluorescence with an image signal, an outgoing aperture for stopping down the fluorescence overlapped with the image signal by the reflective display device, wherein the outgoing aperture and the point light source are disposed side by side in the vicinity of the front focusing surface of the light collecting optical system. With this arrangement, a bright projected image can be obtained while disposing the outgoing aperture and the point light source sufficiently near to each other, reducing aberration, and reducing the diameter of a collecting lens so that the overall size of the projector can be reduced.

摘要翻译： 提供一种具有点光源的投影仪，其设置在用于透射激发光的光纤的边缘并且包括用于通过出射光射出而发射荧光的荧光发光体;聚光光学系统，用于收集从所述光源发出的荧光 反射显示装置，用于反射由聚光光学系统收集的荧光并将荧光与图像信号重叠，用于通过反射显示装置停止与图像信号重叠的荧光的出射孔，其中， 光圈和点光源并排设置在聚光光学系统的前聚焦表面附近。 通过这种布置，可以获得明亮的投影图像，同时将出射孔和点光源充分地彼此靠近设置，减少像差，并且减小聚光透镜的直径，从而可以减小投影仪的总体尺寸。

公开(公告)号：US20100302833A1

公开(公告)日：2010-12-02

申请号：US12801124

申请日：2010-05-24

申请人： Kazuhiro Teramoto ,  Hiroki Fujisawa ,  Susumu Takahashi

发明人： Kazuhiro Teramoto ,  Hiroki Fujisawa ,  Susumu Takahashi

IPC分类号： G11C17/00 ,  G11C29/04

CPC分类号： G11C29/02 ,  G11C17/165 ,  G11C29/027 ,  G11C29/785 ,  G11C29/846

摘要： To provide a semiconductor device including a pair of antifuse elements at either a high level or a low level, an OR circuit that outputs different logic information for a case that at least one of the antifuse elements is at a high level and a case that both of the antifuse elements are at a low level, and an exclusive OR circuit that outputs different logic information for a case that the logic states are different from each other and a case that they are same as each other.

摘要翻译： 为了提供一种包括高电平或低电平的一对反熔丝元件的半导体器件，OR电路为至少一个反熔丝元件处于高电平的情况下输出不同的逻辑信息，以及两个 的反熔丝元件为低电平，异或电路输出逻辑状态彼此不同的情况下的不同的逻辑信息以及彼此相同的情况。