公开(公告)号：US09190503B2

公开(公告)日：2015-11-17

申请号：US14347897

申请日：2011-09-28

申请人： Masaru Senoo ,  Kyosuke Miyagi ,  Tsuyoshi Nishiwaki ,  Jun Saito

发明人： Masaru Senoo ,  Kyosuke Miyagi ,  Tsuyoshi Nishiwaki ,  Jun Saito

IPC分类号： H01L29/66 ,  H01L29/739 ,  H01L29/36 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10

CPC分类号： H01L29/66348 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/6634 ,  H01L29/7396 ,  H01L29/7397

摘要： An IGBT has an emitter region, a top body region that is formed below the emitter region, a floating region that is formed below the top body region, a bottom body region that is formed below the floating region, a trench, a gate insulating film that covers an inner face of the trench, and a gate electrode that is arranged inside the trench. When a distribution of a concentration of p-type impurities in the top body region and the floating region, which are located below the emitter region, is viewed along a thickness direction of a semiconductor substrate, the concentration of the p-type impurities decreases as a downward distance increases from an upper end of the top body region that is located below the emitter region, and assumes a local minimum value at a predetermined depth in the floating region.

摘要翻译： IGBT具有发射极区域，形成在发射极区域下方的顶部主体区域，形成在顶部主体区域下方的浮动区域，形成在浮动区域下方的底部区域，沟槽，栅极绝缘膜 覆盖沟槽的内表面和布置在沟槽内的栅电极。 当沿着半导体衬底的厚度方向观察位于发射极区域下方的顶体区域和浮动区域中的p型杂质浓度的分布时，p型杂质的浓度随着 向下的距离从位于发射极区域下方的顶部主体区域的上端增加，并且在浮动区域中在预定深度处呈现局部最小值。

公开(公告)号：US20140231866A1

公开(公告)日：2014-08-21

申请号：US14347897

申请日：2011-09-28

申请人： Masaru Senoo ,  Kyosuke Miyagi ,  Tsuyoshi Nishiwaki ,  Jun Saito

发明人： Masaru Senoo ,  Kyosuke Miyagi ,  Tsuyoshi Nishiwaki ,  Jun Saito

IPC分类号： H01L29/739 ,  H01L29/66

CPC分类号： H01L29/66348 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/6634 ,  H01L29/7396 ,  H01L29/7397

摘要： An IGBT has an emitter region, a top body region that is formed below the emitter region, a floating region that is formed below the top body region, a bottom body region that is formed below the floating region, a trench, a gate insulating film that covers an inner face of the trench, and a gate electrode that is arranged inside the trench. When a distribution of a concentration of p-type impurities in the top body region and the floating region, which are located below the emitter region, is viewed along a thickness direction of a semiconductor substrate, the concentration of the p-type impurities decreases as a downward distance increases from an upper end of the top body region that is located below the emitter region, and assumes a local minimum value at a predetermined depth in the floating region.

摘要翻译： IGBT具有发射极区域，形成在发射极区域下方的顶部主体区域，形成在顶部主体区域下方的浮动区域，形成在浮动区域下方的底部区域，沟槽，栅极绝缘膜 覆盖沟槽的内表面和布置在沟槽内的栅电极。 当沿着半导体衬底的厚度方向观察位于发射极区域下方的顶体区域和浮动区域中的p型杂质浓度的分布时，p型杂质的浓度随着 向下的距离从位于发射极区域下方的顶部主体区域的上端增加，并且在浮动区域中在预定深度处呈现局部最小值。

公开(公告)号：US09276137B2

公开(公告)日：2016-03-01

申请号：US14155998

申请日：2014-01-15

申请人： Yusuke Yamashita ,  Satoru Machida ,  Jun Saito ,  Masaru Senoo ,  Jun Okawara

发明人： Yusuke Yamashita ,  Satoru Machida ,  Jun Saito ,  Masaru Senoo ,  Jun Okawara

IPC分类号： H01L29/872 ,  H01L29/739 ,  H01L29/861 ,  H01L29/40 ,  H01L29/08 ,  H01L29/06 ,  H01L29/10 ,  H01L29/36 ,  H01L29/16 ,  H01L29/20

CPC分类号： H01L29/872 ,  H01L29/0623 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/36 ,  H01L29/407 ,  H01L29/47 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7806 ,  H01L29/7813 ,  H01L29/861

摘要： A diode is provided with a pillar region formed so as to extend between a barrier region and an anode electrode, contact the barrier region, and made of a first conductivity type semiconductor having a concentration higher than that of the barrier region; and a barrier height adjusting region formed so as to be located between the pillar region and the anode electrode, and contact the pillar region and the anode electrode. The barrier height adjusting region includes at least one component selected from the group consisting of a second conductivity type semiconductor having a concentration lower than that of an anode region, the first conductivity type semiconductor having a concentration lower than that of the pillar region, and an i-type semiconductor. The barrier height adjusting region and the anode electrode are connected through a Schottky junction.

摘要翻译： 二极管设置有形成为在阻挡区域和阳极电极之间延伸的柱状区域，与阻挡区域接触，并且由浓度高于阻挡区域的第一导电型半导体构成; 以及屏障高度调节区域，形成为位于柱状区域和阳极电极之间，并且与柱状区域和阳极电极接触。 势垒高度调整区域包括选自浓度低于阳极区域的第二导电型半导体的第一导电型半导体的浓度比柱状区域低的至少一种成分，以及 i型半导体。 势垒高度调节区域和阳极电极通过肖特基结连接。

公开(公告)号：US20110201187A1

公开(公告)日：2011-08-18

申请号：US13124774

申请日：2009-10-15

申请人： Tsuyoshi Nishiwaki ,  Jun Saito

发明人： Tsuyoshi Nishiwaki ,  Jun Saito

IPC分类号： H01L21/265 ,  H01L21/28

CPC分类号： H01L29/7397 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/66348

摘要： A vertical IGBT includes a floating region of the first conductive type being formed within the body region of the second conductive type. A density of first conductive type impurities at a boundary of the floating region and the body region that is above the floating region is distributed to increase from an upper side to a lower side. A density of the first conductive type impurities at a boundary of the floating region and the body region that is under the floating region is distributed to decrease from an upper side to a lower side. A density of second conductive type impurities at a boundary of the floating region and the body region that is above the floating region is distributed to decrease from an upper side to a lower side. A density of the second conductive type impurities at a boundary of the floating region and the body region that is under the floating region is distributed to increase from an upper side to a lower side.

摘要翻译： 垂直IGBT包括形成在第二导电类型的体区内的第一导电类型的浮动区域。 在浮动区域和浮动区域上方的体区域的边界处的第一导电类型杂质的密度分布成从上侧向下侧增加。 在浮动区域的边界处的第一导电型杂质和位于浮动区域下方的体区域的密度分布从上侧向下侧减小。 在浮动区域和浮动区域上方的体区域的边界处的第二导电类型杂质的密度从上侧向下侧分布。 在浮动区域和浮动区域下方的体区域的边界处的第二导电类型杂质的密度分布成从上侧向下侧增加。

公开(公告)号：US07569875B2

公开(公告)日：2009-08-04

申请号：US11717790

申请日：2007-03-14

申请人： Takashi Suzuki ,  Sachiko Tanaka ,  Masayasu Ishiko ,  Jun Saito ,  Tsuyoshi Nishiwaki ,  Yukihiro Hisanaga ,  Hidehiro Nakagawa ,  Hirokazu Saito

发明人： Takashi Suzuki ,  Sachiko Tanaka ,  Masayasu Ishiko ,  Jun Saito ,  Tsuyoshi Nishiwaki ,  Yukihiro Hisanaga ,  Hidehiro Nakagawa ,  Hirokazu Saito

IPC分类号： H01L29/80

CPC分类号： H01L29/7811 ,  H01L29/0634 ,  H01L29/0661 ,  H01L29/402 ,  H01L29/41741 ,  H01L29/66136 ,  H01L29/7397 ,  H01L29/7813 ,  H01L29/861 ,  H01L29/868

摘要： A semiconductor device having a substrate; an emitter electrode or source electrode formed on the top surface side of the substrate; a gate electrode formed on the top surface side of the substrate; and a collector electrode or drain electrode formed on the bottom surface side of the substrate. The device includes an insulating region formed so as to surround a device-forming region provided on the top surface side of the substrate; and a drift region of the device-forming region, the drift region being in contact with the insulating region, is formed of a semiconductor layer having the same conduction type as that of a channel formed through application of an electric potential to the gate electrode. The gate electrode is a trench gate. An outer peripheral portion of the emitter electrode or source electrode extends in a width of 20 μm or more over the top surface of the insulating region. The insulating region includes, in its interior, a dielectric region having a relative dielectric constant lower than that of the insulating region.

摘要翻译： 一种具有基板的半导体器件; 形成在所述基板的上表面侧的发射电极或源电极; 形成在所述基板的上表面侧的栅电极; 以及形成在基板的底面侧的集电极电极或漏电极。 该器件包括形成为围绕设置在衬底的顶表面侧上的器件形成区域的绝缘区域; 并且与绝缘区域接触的器件形成区域的漂移区域由与通过向栅电极施加电位形成的沟道相同的导电类型的半导体层形成。 栅电极是沟槽栅极。 发射电极或源电极的外周部分在绝缘区域的上表面上延伸20μm以上的宽度。 绝缘区域在其内部包括具有低于绝缘区域的相对介电常数的介电区域。

公开(公告)号：US20070221950A1

公开(公告)日：2007-09-27

申请号：US11717790

申请日：2007-03-14

申请人： Takashi Suzuki ,  Sachiko Tanaka ,  Masayasu Ishiko ,  Jun Saito ,  Tsuyoshi Nishiwaki ,  Yukihiro Hisanaga ,  Hidehiro Nakagawa ,  Hirokazu Saito

发明人： Takashi Suzuki ,  Sachiko Tanaka ,  Masayasu Ishiko ,  Jun Saito ,  Tsuyoshi Nishiwaki ,  Yukihiro Hisanaga ,  Hidehiro Nakagawa ,  Hirokazu Saito

IPC分类号： H01L29/74

CPC分类号： H01L29/7811 ,  H01L29/0634 ,  H01L29/0661 ,  H01L29/402 ,  H01L29/41741 ,  H01L29/66136 ,  H01L29/7397 ,  H01L29/7813 ,  H01L29/861 ,  H01L29/868

摘要： A semiconductor device having a substrate; an emitter electrode or source electrode formed on the top surface side of the substrate; a gate electrode formed on the top surface side of the substrate; and a collector electrode or drain electrode formed on the bottom surface side of the substrate. The device includes an insulating region formed so as to surround a device-forming region provided on the top surface side of the substrate; and a drift region of the device-forming region, the drift region being in contact with the insulating region, is formed of a semiconductor layer having the same conduction type as that of a channel formed through application of an electric potential to the gate electrode. The gate electrode is a trench gate. An outer peripheral portion of the emitter electrode or source electrode extends in a width of 20 μm or more over the top surface of the insulating region. The insulating region includes, in its interior, a dielectric region having a relative dielectric constant lower than that of the insulating region.

摘要翻译： 一种具有基板的半导体器件; 形成在所述基板的上表面侧的发射电极或源电极; 形成在所述基板的上表面侧的栅电极; 以及形成在基板的底面侧的集电极电极或漏电极。 该器件包括形成为围绕设置在衬底的顶表面侧上的器件形成区域的绝缘区域; 并且与绝缘区域接触的器件形成区域的漂移区域由与通过向栅电极施加电位形成的沟道相同的导电类型的半导体层形成。 栅电极是沟槽栅极。 发射电极或源电极的外周部分在绝缘区域的上表面上延伸20μm以上的宽度。 绝缘区域在其内部包括具有低于绝缘区域的相对介电常数的介电区域。

公开(公告)号：US08794606B2

公开(公告)日：2014-08-05

申请号：US12673689

申请日：2008-08-26

申请人： Nobuo Kubo ,  Hiroshi Yanagase ,  Jun Saito ,  Masatomo Nishizaka

发明人： Nobuo Kubo ,  Hiroshi Yanagase ,  Jun Saito ,  Masatomo Nishizaka

IPC分类号： F16F5/00

CPC分类号： F16F13/106

摘要： A liquid sealed vibration isolating device has an elastically movable diaphragm capable of preventing elastic deformation of a relief valve to realize high damping while preventing a cavitation phenomenon. The relief valve is provided in the elastic movable diaphragm arranged in a partition member in order to open and close a leak passage so as to prevent occurrence of the cavitation phenomenon. The relief valve is integrally formed with a fixing portion of the elastic movable diaphragm. There is provided an upwardly open concavity that the relief valve faces. The relief valve is made thicker and provided with an opening and closing adjustment groove at a basal portion of its inclined wall. The opening and closing adjustment groove is formed with a locally thin bending portion functioning as a starting point of bending in an opening and closing operation of the relief valve.

摘要翻译： 液体密封隔振装置具有能够防止安全阀的弹性变形以防止气蚀现象而实现高阻尼的弹性移动隔膜。 安全阀设置在布置在分隔构件中的弹性可动隔膜中，以便打开和关闭泄漏通道，以防止发生气蚀现象。 安全阀与弹性活动隔膜的固定部分整体形成。 提供了安全阀面对的向上开口的凹陷。 安全阀制成较厚，并在其倾斜壁的基部设置有开闭调节槽。 开关调节槽形成有局部薄的弯曲部，其作为安全阀的打开和关闭操作中的弯曲起点。

公开(公告)号：US08711126B2

公开(公告)日：2014-04-29

申请号：US13422958

申请日：2012-03-16

申请人： Jun Saito

发明人： Jun Saito

IPC分类号： G06F3/042

CPC分类号： G06F3/0423 ,  G06F3/0233 ,  G06F2203/04105

摘要： A specific information input region (B) individually specifying information to be input and an input mode switching region (C) used for changing an information input mode are placed on an information input region (A) set on a substrate. Each of these regions is displayed to be visible. An optical sensor detects a touched position on the information input region. Then, the touch operation in the input mode switching region (C) is detected according to the output of the optical sensor to selectively switch the information input mode among keyboard input, pen tablet input and mouse input. The output of the optical sensor is analyzed according to the set input mode to find out the information input by the touch operation.

摘要翻译： 分别指定要输入的信息的特定信息输入区域（B）和用于改变信息输入模式的输入模式切换区域（C）被放置在设置在基板上的信息输入区域（A）上。 这些区域中的每一个都显示为可见。 光学传感器检测信息输入区域上的触摸位置。 然后，根据光传感器的输出来检测输入模式切换区域（C）中的触摸操作，以便有选择地在键盘输入，笔图形输入和鼠标输入之间切换信息输入模式。 根据设定的输入模式对光学传感器的输出进行分析，以找出触摸操作输入的信息。

公开(公告)号：US08531857B2

公开(公告)日：2013-09-10

申请号：US12677131

申请日：2008-08-28

申请人： Akitaka Soeno ,  Jun Saito ,  Gehan Anil Joseph Amaratunga ,  Florin Udrea

发明人： Akitaka Soeno ,  Jun Saito ,  Gehan Anil Joseph Amaratunga ,  Florin Udrea

IPC分类号： H02M7/5387

CPC分类号： H01L29/7397 ,  H01L29/0834 ,  H03K17/08128 ,  H03K17/0828

摘要： In a reverse conducting semiconductor device, which forms a composition circuit, a positive voltage that is higher than a positive voltage of a collector electrode may be applied to an emitter electrode. In this case, in a region of the reverse conducting semiconductor device in which a return diode is formed, a body contact region functions as an anode, a drift contact region functions as a cathode, and current flows from the anode to the cathode. When a voltage having a lower electric potential than the collector electrode is applied to the trench gate electrode at that time, p-type carriers are generated within the cathode and a quantity of carriers increases within the return diode. As a result, a forward voltage drop of the return diode lowers, and constant loss of electric power can be reduced. Electric power loss can be reduced in a power supply device that uses such a composition circuit in which a switching element and the return diode are connected in reverse parallel.

摘要翻译： 在形成合成电路的反向导通半导体器件中，可以将高于集电极的正电压的正电压施加到发射极。 在这种情况下，在形成有返回二极管的反向导通半导体器件的区域中，体接触区域用作阳极，漂移接触区域用作阴极，并且电流从阳极流到阴极。 此时当沟槽栅电极施加具有比集电极电位低的电压的电压时，在阴极内产生p型载流子，在返回二极管内增加载流子数量。 结果，返回二极管的正向压降降低，并且可以减少电力的恒定损失。 在使用其中开关元件和返回二极管反向并联连接的组合电路的电源装置中，电力损耗可以减小。

公开(公告)号：US08523176B2

公开(公告)日：2013-09-03

申请号：US13084602

申请日：2011-04-12

申请人： Jun Saito

发明人： Jun Saito

IPC分类号： B65H43/04 ,  G03G15/00

CPC分类号： B65H5/021 ,  B65G39/07 ,  B65H2404/252 ,  B65H2801/06

摘要： A protrusion (13a) and a protrusion (13b) are formed a predetermined distance apart in the direction of a shaft in the outer circumferential surface of the roller main body (11). The cross sections of the protrusion (13a) and the protrusion (13b) are shaped such that a center portion of the roller main body (11) in the direction of the shaft is a boundary (14), and that on the left side of the boundary (14), a vertex (131a) is displaced to the left side from the perpendicular bisector (133a) of an opposite side (132a) whereas on the right side of the boundary (14), a vertex (131b) is displaced to the right side from the perpendicular bisector (133b) of an opposite side (132b). In this way, in a metallic movement roller that moves a strung endless belt, the winding movement and the like of the belt can be prevented, and the belt can be intentionally moved in a specific direction.

摘要翻译： 突起（13a）和突起（13b）在辊主体（11）的外周面中沿着轴的方向间隔开预定距离。 突起（13a）和突起（13b）的横截面形状使得辊主体（11）在轴的方向上的中心部分是边界（14），并且在左 边界（14）中，顶点（131a）从相对侧（132a）的垂直平分线（133a）向左侧移位，而在边界（14）的右侧，顶点（131b）位移 到相对侧（132b）的垂直平分线（133b）的右侧。 以这种方式，在移动带状环状带的金属制移动辊中，能够防止带的卷绕动作等，能够有意地沿特定的方向移动带。