Semiconductor light emitting device and method for fabricating same
    8.
    发明申请
    Semiconductor light emitting device and method for fabricating same 有权
    半导体发光器件及其制造方法

    公开(公告)号:US20080151952A1

    公开(公告)日:2008-06-26

    申请号:US12000929

    申请日:2007-12-19

    IPC分类号: H01S5/024 H01L33/00

    摘要: A nitride semiconductor device includes a stem. A heat sink is provided on the stem. At least one nitride semiconductor light-emitting element is connected to the heat sink. A light-detecting element for detecting light from the semiconductor light-emitting element is provided on the stem. A cap for encapsulating therein the heat sink, the semiconductor light-emitting element, and the light-detecting element in a sealed manner is connected to the stem. The space in the cap has an encapsulated atmosphere. The encapsulated atmosphere contains a component for inhibiting diffusion of hydrogen atoms contained in the semiconductor light-emitting element. The present invention suppresses defect due to an increase in operation voltage to increase a ratio of good goods thereby improving the fabrication yield of the semiconductor light-emitting device.

    摘要翻译: 氮化物半导体器件包括茎。 杆上设有散热器。 至少一个氮化物半导体发光元件连接到散热器。 用于检测来自半导体发光元件的光的光检测元件设置在杆上。 用于将封装在其中的散热片,半导体发光元件和光检测元件封装的盖连接到该杆上。 帽中的空间具有封装的气氛。 封装的气氛含有抑制半导体发光元件中含有的氢原子扩散的成分。 本发明抑制了由于操作电压的增加引起的缺陷,从而提高了商品的比例,从而提高了半导体发光装置的制造成品率。

    Cap member and semiconductor device employing same
    9.
    发明授权
    Cap member and semiconductor device employing same 有权
    盖构件和使用其的半导体器件

    公开(公告)号:US08253240B2

    公开(公告)日:2012-08-28

    申请号:US12292672

    申请日:2008-11-24

    IPC分类号: H01L23/12

    摘要: A cap member capable of alleviating degradation of reliability and improving fabrication yields is provided. The cap member has a cylindrical side wall portion, a top face portion closing one end of the side wall portion and having a light exit hole formed therein to allow extraction of laser light from a semiconductor laser chip; a light transmission window fitted to the top face portion to stop the light exit hole, and a flange portion arranged at the other end of the side wall portion and welded on the upper face of a stem on which the semiconductor laser chip is mounted. A groove portion is formed in an inner surface of the top face portion, and this groove portion makes part of the top face portion in a predetermined region less thick than the other part thereof.

    摘要翻译: 提供了能够减轻可靠性降低并提高制造成品率的盖构件。 盖构件具有圆筒形侧壁部分,顶面部分,其封闭侧壁部分的一端并且具有形成在其中的光出射孔,以允许从半导体激光芯片提取激光; 安装在顶面部上以阻止光射出孔的光透射窗,以及布置在侧壁部分的另一端并焊接在其上安装半导体激光芯片的杆的上表面上的凸缘部分。 在顶面部的内表面形成有槽部,该槽部使顶面部的一部分成为比其他部分厚的规定区域。

    Semiconductor light emitting device and method for fabricating same
    10.
    发明授权
    Semiconductor light emitting device and method for fabricating same 有权
    半导体发光器件及其制造方法

    公开(公告)号:US07656916B2

    公开(公告)日:2010-02-02

    申请号:US12000929

    申请日:2007-12-19

    IPC分类号: H01S3/04

    摘要: A nitride semiconductor device includes a stem. A heat sink is provided on the stem. At least one nitride semiconductor light-emitting element is connected to the heat sink. A light-detecting element for detecting light from the semiconductor light-emitting element is provided on the stem. A cap for encapsulating therein the heat sink, the semiconductor light-emitting element, and the light-detecting element in a sealed manner is connected to the stem. The space in the cap has an encapsulated atmosphere. The encapsulated atmosphere contains a component for inhibiting diffusion of hydrogen atoms contained in the semiconductor light-emitting element. The present invention suppresses defect due to an increase in operation voltage to increase a ratio of good goods thereby improving the fabrication yield of the semiconductor light-emitting device.

    摘要翻译: 氮化物半导体器件包括茎。 杆上设有散热器。 至少一个氮化物半导体发光元件连接到散热器。 用于检测来自半导体发光元件的光的光检测元件设置在杆上。 用于将封装在其中的散热片,半导体发光元件和光检测元件封装的盖连接到该杆上。 帽中的空间具有封装的气氛。 封装的气氛含有抑制半导体发光元件中含有的氢原子扩散的成分。 本发明抑制了由于操作电压的增加引起的缺陷,从而提高了商品的比例,从而提高了半导体发光装置的制造成品率。