公开(公告)号：US09024544B2

公开(公告)日：2015-05-05

申请号：US13509537

申请日：2010-11-10

申请人： Masayoshi Nagao ,  Tomoya Yoshida ,  Yoichiro Neo

发明人： Masayoshi Nagao ,  Tomoya Yoshida ,  Yoichiro Neo

IPC分类号： H01J3/02 ,  H01J31/12

CPC分类号： H01J3/022 ,  H01J31/127 ,  H01J2203/0208 ,  H01J2203/0228 ,  H01J2329/4604 ,  H01J2329/4626

摘要： In a field emission device, the fundamental cause of spherical aberration in an emitted electron beam trajectory is eliminated or mitigated. An aberration suppressor electrode 31 is provided at a lower vertical position than an extraction gate electrode 13 so its opening inner peripheral edge 31e faces a position near an emitter tip 11tp. The vertical position of the opening inner peripheral edge 31e of the aberration suppressor electrode 31 is made lower than the vertical position of the emitter tip 11tp. An aberration suppressing voltage Vsp is applied to the aberration suppressor electrode 31 that is a lower voltage than the potential of the emitter 11 and controls equipotential lines near the emitter tip 11tp to make them parallel.

摘要翻译： 在场发射器件中，消除或减轻发射的电子束轨迹中球面像差的根本原因。 在比提取栅电极13低的垂直位置处设置像差抑制电极31，使得其开口内周边缘31e面向发射极尖端11tp附近的位置。 使像差抑制电极31的开口内周缘31e的垂直位置比发射极尖端11tp的垂直位置低。 像差抑制电压Vsp被施加到比发射极11的电位低的电压的像差抑制电极31，并且控制发射极尖端11tp附近的等电位线使其平行。

公开(公告)号：US20120229051A1

公开(公告)日：2012-09-13

申请号：US13509537

申请日：2010-11-10

申请人： Masayoshi Nagao ,  Tomoya Yoshida ,  Yoichiro Neo

发明人： Masayoshi Nagao ,  Tomoya Yoshida ,  Yoichiro Neo

IPC分类号： H01J29/46

CPC分类号： H01J3/022 ,  H01J31/127 ,  H01J2203/0208 ,  H01J2203/0228 ,  H01J2329/4604 ,  H01J2329/4626

摘要： In a field emission device, the fundamental cause of spherical aberration in an emitted electron beam trajectory is eliminated or mitigated. An aberration suppressor electrode 31 is provided at a lower vertical position than an extraction gate electrode 13 so its opening inner peripheral edge 31e faces a position near an emitter tip 11tp. The vertical position of the opening inner peripheral edge 31e of the aberration suppressor electrode 31 is made lower than the vertical position of the emitter tip 11tp. An aberration suppressing voltage Vsp is applied to the aberration suppressor electrode 31 that is a lower voltage than the potential of the emitter 11 and controls equipotential lines near the emitter tip 11tp to make them parallel.

摘要翻译： 在场发射器件中，消除或减轻发射的电子束轨迹中球面像差的根本原因。 在比提取栅电极13低的垂直位置处设置像差抑制电极31，使得其开口内周边缘31e面向发射极尖端11tp附近的位置。 使像差抑制电极31的开口内周缘31e的垂直位置比发射极尖端11tp的垂直位置低。 像差抑制电压Vsp被施加到比发射极11的电位低的电压的像差抑制电极31，并且控制发射极尖端11tp附近的等电位线使其平行。

公开(公告)号：US06586952B2

公开(公告)日：2003-07-01

申请号：US09881000

申请日：2001-06-15

申请人： Mari Nozoe ,  Mitsuo Suga ,  Yoichiro Neo ,  Hidetoshi Nishiyama

发明人： Mari Nozoe ,  Mitsuo Suga ,  Yoichiro Neo ,  Hidetoshi Nishiyama

IPC分类号： G01R31305

CPC分类号： H01J37/222 ,  G01R31/307 ,  H01J37/256 ,  H01J37/263 ,  H01J37/265 ,  H01J37/266 ,  H01J2237/043 ,  H01J2237/24564 ,  H01J2237/2594 ,  H01J2237/2813 ,  H01J2237/2817 ,  H01J2237/304

摘要： Electron beam is irradiated to a wafer in the midst of steps at predetermined intervals by a plurality of times under a condition in which a junction becomes rearward bias and a difference in characteristic of a time period of alleviating charge in the rearward bias is monitored. As a result, charge is alleviated at a location where junction leakage is caused in a time period shorter than that of a normal portion and therefore, a potential difference is produced between the normal portion and a failed portion and is observed in a potential contrast image as a difference in brightness. By consecutively repeating operation of acquiring the image, executing an image processing in real time and storing a position and brightness of the failed portion, the automatic inspection of a designated region can be executed. Information of image, brightness and distribution of the failed portion is preserved and outputted automatically after inspection.

摘要翻译： 电子束在连接点成为向后偏置的状态下以预定间隔在步骤中照射到晶片，并且监视在向后偏置中减轻电荷的时间段的特性差。 结果，在比正常部分短的时间段内产生结漏电的位置处的电荷被减轻，因此在正常部分和失效部分之间产生电位差，并且在潜在对比图像中观察到电荷 作为亮度的差异。 通过连续重复获取图像的操作，实时执行图像处理并存储失败部分的位置和亮度，可以执行指定区域的自动检查。 故障部分的图像，亮度和分布信息在检查后自动保存并输出。

公开(公告)号：US07876113B2

公开(公告)日：2011-01-25

申请号：US12007911

申请日：2008-01-17

申请人： Mari Nozoe ,  Mitsuo Suga ,  Yoichiro Neo ,  Hidetoshi Nishiyama

发明人： Mari Nozoe ,  Mitsuo Suga ,  Yoichiro Neo ,  Hidetoshi Nishiyama

IPC分类号： G01R31/305

CPC分类号： H01J37/222 ,  G01R31/307 ,  H01J37/256 ,  H01J37/263 ,  H01J37/265 ,  H01J37/266 ,  H01J2237/043 ,  H01J2237/24564 ,  H01J2237/2594 ,  H01J2237/2813 ,  H01J2237/2817 ,  H01J2237/304

摘要： Electron beam is irradiated to a wafer in the midst of steps at predetermined intervals by a plurality of times under a condition in which a junction becomes rearward bias and a difference in characteristic of a time period of alleviating charge in the rearward bias is monitored. As a result, charge is alleviated at a location where junction leakage is caused in a time period shorter than that of a normal portion and therefore, a potential difference is produced between the normal portion and a failed portion and is observed in a potential contrast image as a difference in brightness. By consecutively repeating operation of acquiring the image, executing an image processing in real time and storing a position and brightness of the failed portion, the automatic inspection of a designated region can be executed. Information of image, brightness and distribution of the failed portion is preserved and outputted automatically after inspection.

摘要翻译： 电子束在连接点成为向后偏置的状态下以预定间隔在步骤中照射到晶片，并且监视在向后偏置中减轻电荷的时间段的特性差。 结果，在比正常部分短的时间段内产生结漏电的位置处的电荷被减轻，因此在正常部分和失效部分之间产生电位差，并且在潜在对比图像中观察到电荷 作为亮度的差异。 通过连续重复获取图像的操作，实时执行图像处理并存储失败部分的位置和亮度，可以执行指定区域的自动检查。 故障部分的图像，亮度和分布信息在检查后自动保存并输出。

公开(公告)号：US06924482B2

公开(公告)日：2005-08-02

申请号：US10395197

申请日：2003-03-25

申请人： Mari Nozoe ,  Mitsuo Suga ,  Yoichiro Neo ,  Hidetoshi Nishiyama

发明人： Mari Nozoe ,  Mitsuo Suga ,  Yoichiro Neo ,  Hidetoshi Nishiyama

IPC分类号： G01R31/28 ,  G01Q10/00 ,  G01Q30/04 ,  G01R31/307 ,  H01L21/00 ,  H01L21/66 ,  G21K7/00

CPC分类号： H01J37/222 ,  G01R31/307 ,  H01J37/256 ,  H01J37/263 ,  H01J37/265 ,  H01J37/266 ,  H01J2237/043 ,  H01J2237/24564 ,  H01J2237/2594 ,  H01J2237/2813 ,  H01J2237/2817 ,  H01J2237/304

摘要： Electron beam is irradiated to a wafer in the midst of steps at predetermined intervals by a plurality of times under a condition in which a junction becomes rearward bias and a difference in characteristic of a time period of alleviating charge in the rearward bias is monitored. As a result, charge is alleviated at a location where junction leakage is caused in a time period shorter than that of a normal portion and therefore, a potential difference is produced between the normal portion and a failed portion and is observed in a potential contrast image as a difference in brightness. By consecutively repeating operation of acquiring the image, executing an image processing in real time and storing a position and brightness of the failed portion, the automatic inspection of a designated region can be executed. Information of image, brightness and distribution of the failed portion is preserved and outputted automatically after inspection.

摘要翻译： 电子束在连接点成为向后偏置的状态下以预定间隔在步骤中照射到晶片，并且监视在向后偏置中减轻电荷的时间段的特性差。 结果，在比正常部分短的时间段内产生结漏电的位置处的电荷被减轻，因此在正常部分和失效部分之间产生电位差，并且在潜在对比图像中观察到电荷 作为亮度的差异。 通过连续重复获取图像的操作，实时执行图像处理并存储失败部分的位置和亮度，可以执行指定区域的自动检查。 故障部分的图像，亮度和分布信息在检查后自动保存并输出。

公开(公告)号：US08405294B2

公开(公告)日：2013-03-26

申请号：US12343396

申请日：2008-12-23

申请人： Takahiro Matsumoto ,  Yoichiro Neo

发明人： Takahiro Matsumoto ,  Yoichiro Neo

IPC分类号： H01J1/00 ,  H01J19/06

CPC分类号： H01J1/304 ,  H01J9/025 ,  H01J2201/30446

摘要： A field emission electron source for emitting electrons under applied electric field includes a cold cathode having molecules of an aromatic compound vapor-deposited thereon at a pointed end of said cold cathode.

摘要翻译： 用于在施加的电场下发射电子的场致发射电子源包括在所述冷阴极的尖端处具有气相沉积在其上的芳族化合物分子的冷阴极。

公开(公告)号：US20100033072A1

公开(公告)日：2010-02-11

申请号：US12343396

申请日：2008-12-23

申请人： Takahiro Matsumoto ,  Yoichiro Neo

发明人： Takahiro Matsumoto ,  Yoichiro Neo

IPC分类号： H01J9/02 ,  H01J9/12

CPC分类号： H01J1/304 ,  H01J9/025 ,  H01J2201/30446

摘要： A field emission electron source for emitting electrons under applied electric field includes a cold cathode having molecules of an aromatic compound vapor-deposited thereon at a pointed end of said cold cathode.

摘要翻译： 用于在施加的电场下发射电子的场致发射电子源包括在所述冷阴极的尖端处具有气相沉积在其上的芳族化合物分子的冷阴极。

公开(公告)号：US06859060B2

公开(公告)日：2005-02-22

申请号：US10172925

申请日：2002-06-18

申请人： Yoichiro Neo ,  Mari Nozoe

发明人： Yoichiro Neo ,  Mari Nozoe

IPC分类号： G01B15/00 ,  G01N23/225 ,  G01R31/302 ,  G01R31/307 ,  H01L21/66 ,  G01R31/26 ,  G01R1/04

CPC分类号： G01R31/307 ,  H01L22/14

摘要： An inspection technique for enabling an inspection on a wafer at an early stage during a wafer process. A wafer in a process is irradiated with an electron beam a plurality of times at predetermined intervals under a condition that a junction is backward biased, and secondary electron signals are monitored, so as to evaluate relax time characteristic of a backward bias potential in a p-n junction. Since the potential in the p-n junction decreases according to the intensity of a backward bias current in intermittent time, a backward bias current can be specified from an intensity signal interrelated with the number of secondary electron signals, that is, a potential contrast image on the basis of image information.

摘要翻译： 一种用于在晶片处理期间能够在早期阶段对晶片进行检查的检查技术。 在结合反向偏置的条件下，以规定的间隔以电子束多次照射处理的晶片，对二次电子信号进行监视，以评价pn中的反向偏置电位的弛豫时间特性 交界处 由于pn结中的电位根据间歇时间的反向偏置电流的强度而减小，所以可以从与二次电子信号的数量相关的强度信号，即， 图像信息的基础。