Organoruthenium compound for chemical deposition and chemical deposition process using the organoruthenium compound
    1.
    发明授权
    Organoruthenium compound for chemical deposition and chemical deposition process using the organoruthenium compound 有权
    用于化学沉积的有机钌化合物和使用有机钌化合物的化学沉积方法

    公开(公告)号:US08642796B2

    公开(公告)日:2014-02-04

    申请号:US13161012

    申请日:2011-06-15

    IPC分类号: C07F15/00 C23C16/00

    摘要: An object of the present invention is to provide an organoruthenium compound which has good film formation characteristics as an organoruthenium compound for chemical deposition, has a high vapor pressure, and can easily form a film even when hydrogen is used as a reactant gas. The present invention relates to an organoruthenium compound, dicarbonyl-bis(5-methyl-2,4-hexanediketonato)ruthenium (II) which can have isomers 1 to 3, wherein the content of the isomer 2 is 30% by mass or more, the content of the isomer 3 is 30% by mass or less, and the balance is the isomer 1.

    摘要翻译: 本发明的目的是提供一种作为化学沉积的有机钌化合物具有良好的成膜特性的有机钌化合物,具有高的蒸气压,并且即使在使用氢作为反应气体时也能容易地形成膜。 本发明涉及可以具有异构体1〜3的有机钌化合物二羰基 - 双(5-甲基-2,4-己二酮)钌(II),其中异构体2的含量为30质量%以上, 异构体3的含量为30质量%以下,余量为异构体1。

    Chemical vapor deposition method using an organoplatinum compound
    2.
    发明授权
    Chemical vapor deposition method using an organoplatinum compound 有权
    化学气相沉积法使用有机铂化合物

    公开(公告)号:US08911827B2

    公开(公告)日:2014-12-16

    申请号:US14003297

    申请日:2012-04-16

    IPC分类号: C23C16/18 C07F15/00

    CPC分类号: C23C16/18 C07F15/0086

    摘要: A chemical deposition method for producing a platinum thin film or a platinum compound thin film by chemical vapor deposition of an organoplatinum compound is represented by the following formula, which includes a divalent platinum atom, and hexadiene or a hexadiene derivative and alkyl anions coordinated to the divalent platinum atom. In the following formula, R1 and R2 are each an alkyl group, and may be different from each other. R3 and R4 are each a hydrogen atom or an alkyl group, and may be different from each other. The organoplatinum compound is satisfactory in stability and generates no toxic substance in film formation, and hence is satisfactory in handleability and excellent in practicability. The organoplatinum compound has a high vapor pressure, enables the film formation at a low temperature, and is useful as a CVD raw material easily forming a film on a spatial structure.

    摘要翻译: 通过化学气相沉积有机铂化合物制备铂薄膜或铂化合物薄膜的化学沉积方法由下式表示,其包括二价铂原子,己二烯或己二烯衍生物和与 二价铂原子。 在下式中,R 1和R 2各自为烷基,并且可以彼此不同。 R 3和R 4各自为氢原子或烷基,并且可以彼此不同。 有机铂化合物的稳定性令人满意,成膜时不产生有毒物质,因此操作性好,实用性优异。 有机铂化合物具有高蒸气压,能够在低温下形成膜,并且可用作在空间结构上容易形成膜的CVD原料。

    Organic Platinum Compound For Chemical Vapor Deposition, And Chemical Vapor Deposition Method Using Organic Platinum Compound
    3.
    发明申请
    Organic Platinum Compound For Chemical Vapor Deposition, And Chemical Vapor Deposition Method Using Organic Platinum Compound 有权
    用于化学气相沉积的有机铂化合物和使用有机铂化合物的化学气相沉积方法

    公开(公告)号:US20130344243A1

    公开(公告)日:2013-12-26

    申请号:US14003297

    申请日:2012-04-16

    IPC分类号: C23C16/18

    CPC分类号: C23C16/18 C07F15/0086

    摘要: The present invention is an organoplatinum compound for producing a platinum thin film or a platinum compound thin film by chemical vapor deposition, wherein the organoplatinum compound is represented by the following formula, and includes a divalent platinum atom, and hexadiene or a hexadiene derivative and alkyl anions coordinated to the divalent platinum atom. In the following formula, R1 and R2 are each an alkyl group, and may be different from each other. R3 and R4 are each a hydrogen atom or an alkyl group, and may be different from each other. The organoplatinum compound is satisfactory in stability and generates no toxic substance in film formation, and hence is satisfactory in handleability and excellent in practicability. The organoplatinum compound has a high vapor pressure, enables the film formation at a low temperature, and is useful as a CVD raw material easily forming a film on a spatial structure.

    摘要翻译: 本发明是通过化学气相沉积制造铂薄膜或铂化合物薄膜的有机铂化合物,其中有机铂化合物由下式表示,并且包括二价铂原子,己二烯或己二烯衍生物和烷基 阴离子与二价铂原子配位。 在下式中,R 1和R 2各自为烷基,并且可以彼此不同。 R 3和R 4各自为氢原子或烷基,并且可以彼此不同。 有机铂化合物的稳定性令人满意,成膜时不产生有毒物质,因此操作性好,实用性优异。 有机铂化合物具有高蒸气压,能够在低温下形成膜,并且可用作在空间结构上容易形成膜的CVD原料。

    Blower
    6.
    发明授权
    Blower 失效
    鼓风机

    公开(公告)号:US5266004A

    公开(公告)日:1993-11-30

    申请号:US670930

    申请日:1991-03-18

    IPC分类号: F04D25/10 F04D29/70

    CPC分类号: F04D25/10 F04D29/703

    摘要: A blower having a base, a main body which has an air inlet opening and an air blowing opening and which is rotatably mounted on a base, a fan disposed in the main body to make air entering the main body through the air inlet opening flow out of the main body through the air blowing opening, a motor for rotating the fan, an automatic rotation mechanism for rotating the main body through 360.degree. or more relative to the base, and an automatic oscillation mechanism for changing over the normal-direction and reverse-direction rotations of the main body on the base in a predetermined angular range.

    摘要翻译: 一种鼓风机,具有基座,主体具有进气口和空气吹入口,并且可旋转地安装在基座上,风扇设置在主体中,以使空气通过进气口开口流入主体 通过吹风口主体,用于使风扇旋转的电动机,用于使主体相对于基座旋转360度或更大的自动旋转机构,以及用于在正向和反向转换的自动振荡机构 主体在基座上的预定角度范围内的方向旋转。