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1.发明申请公开(公告)号：US20130292637A1
公开(公告)日：2013-11-07
申请号：US13465545
申请日：2012-05-07
IPC分类号： H01L33/06
CPC分类号： H01L33/325 , H01L33/06 , H01L33/18
摘要： A group III nitride-based light emitting device includes an n-type group III nitride-based semiconductor layer, a p-type group III nitride-based semiconductor layer, and a group III nitride-based active region between the p-type semiconductor layer and the n-type semiconductor layer. The active region includes a plurality of sequentially stacked group III nitride-based quantum well layers interspersed with barrier layers. A plurality of the barrier layers have a variation in composition of a first element along a growth direction within a thickness of each of the plurality of barrier layers, and the variation in composition of the first element has at least one minimum and a position of the minimum varies in the plurality of barrier layers. The first element may be indium or aluminium, and the number of barrier layers including the composition variation may be at least three barrier layers. The composition variation may vary linearly or non-linearly.
摘要翻译： III族氮化物系发光器件包括n型III族氮化物基半导体层，p型III族氮化物基半导体层和在p型半导体层之间的III族氮化物基有源区 和n型半导体层。 有源区包括散布有阻挡层的多个依次层叠的III族氮化物基量子阱层。 多个阻挡层在多个阻挡层的每一个的厚度内沿着生长方向具有第一元件的组成变化，并且第一元件的组成变化具有至少一个最小值和 最小值在多个阻挡层中变化。 第一元素可以是铟或铝，并且包括组成变化的阻挡层的数量可以是至少三个阻挡层。 组成变化可以线性或非线性地变化。
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公开(公告)号：US20110180824A1
公开(公告)日：2011-07-28
申请号：US12693475
申请日：2010-01-26
IPC分类号： H01L33/00
CPC分类号： F21V3/00 , F21K9/23 , F21K9/232 , F21K9/61 , F21K9/64 , F21K9/65 , F21Y2105/10 , F21Y2113/13 , F21Y2115/10 , G02B6/0008
摘要： A light emitting diode device which includes at least one light emitting diode, a heat-sink chassis having a surface upon which the at least one light emitting diode is mounted, and a waveguide having one end coupled to the at least one light emitting diode for receiving light therefrom. The waveguide has another end which includes a light extraction and redistribution region, and the waveguide is configured to guide light received from the at least one light emitting diode away from the heat-sink chassis and towards the light extraction and redistribution region. The light extraction and redistribution region is configured to extract and redistribute the light from the waveguide.
摘要翻译： 一种发光二极管装置，其包括至少一个发光二极管，具有其上安装有所述至少一个发光二极管的表面的散热底盘，以及波导，其一端耦合到所述至少一个发光二极管，用于 从中接收光。 波导具有包括光提取和再分布区域的另一端，并且波导被配置为将从至少一个发光二极管接收的光引导离开散热底盘并朝向光提取和再分布区域。 光提取和再分布区域被配置为提取并重新分布来自波导的光。
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公开(公告)号：US20120204957A1
公开(公告)日：2012-08-16
申请号：US13024377
申请日：2011-02-10
IPC分类号： H01L21/20 , H01L29/20 , H01L31/0304 , H01L33/32
CPC分类号： H01L21/0254 , H01L21/02389 , H01L21/02458 , H01L21/02631 , H01L29/2003 , H01L31/03044 , H01L31/03048 , H01L31/1848 , H01L31/1856 , H01L33/0075 , Y02E10/544
摘要： A method for growing an In(x)Al(y)Ga(1−x−y)N layer (where x is greater than zero and less than or equal to one, y is greater than or equal to zero and less than or equal to one and the sum of x and y is less than or equal to one). The method includes supplying plasma-activated nitrogen atoms as a source of nitrogen for the In(x)Al(y)Ga(1−x−y)N layer to a growth surface, where a flux of the plasma-activated nitrogen atoms supplied to the growth surface is at least four times higher than a total flux of aluminium and gallium atoms also supplied to the growth surface, where either the aluminium or gallium flux may or may not be zero; and simultaneously supplying indium atoms and nitrogen-containing molecules to the growth surface.
摘要翻译： 用于生长In（x）Al（y）Ga（1-x-y）N层的方法（其中x大于零且小于或等于1，y大于或等于零且小于或等于0， 等于1，x和y的和小于或等于1）。 该方法包括将等离子体激活的氮原子作为In（x）Al（y）Ga（1-x-y）N层的氮源提供给生长表面，其中提供了等离子体激活的氮原子的通量 生长表面比也提供给生长表面的铝和镓原子的总通量高至少四倍，其中铝或镓焊剂可以是或不是零; 同时向生长表面提供铟原子和含氮分子。
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4.发明申请公开(公告)号：US20120205692A1
公开(公告)日：2012-08-16
申请号：US13025265
申请日：2011-02-11
CPC分类号： H01L33/38 , H01L33/20 , H01L33/40 , H01L33/44 , H01L2933/0083
摘要： A light emitting diode (LED) is provided along with a method of making the same. The LED includes a conductive n-type region formed on a substrate; an active region formed on the n-type region; a first p-type region formed on the active region; a plurality of nanostructures formed on the first p-type region to carry out light extraction from the active region, the nanostructures having a diameter less than 500 nm; a second p-type region regrown on the first p-type region to form a non-planar surface in combination with the nanostructures; and a p-type electrode formed on the non-planar surface.
摘要翻译： 提供一种发光二极管（LED）及其制造方法。 LED包括形成在基板上的导电n型区域; 形成在n型区域上的有源区; 形成在所述有源区上的第一p型区; 形成在所述第一p型区域上的多个纳米结构，以从所述有源区域进行光提取，所述纳米结构具有小于500nm的直径; 在第一p型区域上重新生长的第二p型区域，以与纳米结构组合形成非平面表面; 以及形成在非平面表面上的p型电极。
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5.发明授权公开(公告)号：US09029830B2
公开(公告)日：2015-05-12
申请号：US13465545
申请日：2012-05-07
CPC分类号： H01L33/325 , H01L33/06 , H01L33/18
摘要： A group III nitride-based light emitting device includes an n-type group III nitride-based semiconductor layer, a p-type group III nitride-based semiconductor layer, and a group III nitride-based active region between the p-type semiconductor layer and the n-type semiconductor layer. The active region includes a plurality of sequentially stacked group III nitride-based quantum well layers interspersed with barrier layers. A plurality of the barrier layers have a variation in composition of a first element along a growth direction within a thickness of each of the plurality of barrier layers, and the variation in composition of the first element has at least one minimum and a position of the minimum varies in the plurality of barrier layers. The first element may be indium or aluminum, and the number of barrier layers including the composition variation may be at least three barrier layers. The composition variation may vary linearly or non-linearly.
摘要翻译： III族氮化物系发光器件包括n型III族氮化物基半导体层，p型III族氮化物基半导体层和在p型半导体层之间的III族氮化物基有源区 和n型半导体层。 有源区包括散布有阻挡层的多个依次层叠的III族氮化物基量子阱层。 多个阻挡层在多个阻挡层的每一个的厚度内沿着生长方向具有第一元件的组成变化，并且第一元件的组成变化具有至少一个最小值和 最小值在多个阻挡层中变化。 第一元素可以是铟或铝，并且包括组成变化的阻挡层的数量可以是至少三个阻挡层。 组成变化可以线性或非线性地变化。
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6.发明授权公开(公告)号：US08314439B2
公开(公告)日：2012-11-20
申请号：US13025265
申请日：2011-02-11
CPC分类号： H01L33/38 , H01L33/20 , H01L33/40 , H01L33/44 , H01L2933/0083
摘要： A light emitting diode (LED) is provided along with a method of making the same. The LED includes a conductive n-type region formed on a substrate; an active region formed on the n-type region; a first p-type region formed on the active region; a plurality of nanostructures formed on the first p-type region to carry out light extraction from the active region, the nanostructures having a diameter less than 500 nm; a second p-type region regrown on the first p-type region to form a non-planar surface in combination with the nanostructures; and a p-type electrode formed on the non-planar surface.
摘要翻译： 提供一种发光二极管（LED）及其制造方法。 LED包括形成在基板上的导电n型区域; 形成在n型区域上的有源区; 形成在所述有源区上的第一p型区; 形成在所述第一p型区域上的多个纳米结构，以从所述有源区域进行光提取，所述纳米结构具有小于500nm的直径; 在第一p型区域上重新生长的第二p型区域，以与纳米结构组合形成非平面表面; 以及形成在非平面表面上的p型电极。
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公开(公告)号：US08258524B2
公开(公告)日：2012-09-04
申请号：US12693475
申请日：2010-01-26
CPC分类号： F21V3/00 , F21K9/23 , F21K9/232 , F21K9/61 , F21K9/64 , F21K9/65 , F21Y2105/10 , F21Y2113/13 , F21Y2115/10 , G02B6/0008
摘要： A light emitting diode device which includes at least one light emitting diode, a heat-sink chassis having a surface upon which the at least one light emitting diode is mounted, and a waveguide having one end coupled to the at least one light emitting diode for receiving light therefrom. The waveguide has another end which includes a light extraction and redistribution region, and the waveguide is configured to guide light received from the at least one light emitting diode away from the heat-sink chassis and towards the light extraction and redistribution region. The light extraction and redistribution region is configured to extract and redistribute the light from the waveguide.
摘要翻译： 一种发光二极管装置，其包括至少一个发光二极管，具有其上安装有所述至少一个发光二极管的表面的散热底盘，以及波导，其一端耦合到所述至少一个发光二极管，用于 从中接收光。 波导具有包括光提取和再分布区域的另一端，并且波导被配置为将从至少一个发光二极管接收的光引导离开散热底盘并朝向光提取和再分布区域。 光提取和再分布区域被配置为提取并重新分布来自波导的光。
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公开(公告)号：US20110147784A1
公开(公告)日：2011-06-23
申请号：US12654391
申请日：2009-12-18
摘要： A nitride light emitting device (LED) according to a non-limiting embodiment of the present invention may include a p-pad and an n-pad, wherein the p-pad and n-pad are disposed on opposite ends of the device. A first p-branch electrode and a second p-branch electrode may extend from the p-pad toward the n-pad, with the first p-branch electrode extending along a length of the device. The second p-branch electrode may have a bent portion so as to extend along a width and length of the device. An n-branch electrode may extend from the n-pad toward the p-pad, wherein a distal end of the n-branch electrode is angled toward the bent portion of the second p-branch electrode. Alternatively, the p-branch and n-branch electrodes may be configured such that a distance between the n-branch electrode and the first and second p-branch electrodes increases with proximity to the n-pad. As a result, the nitride-based LED according to example embodiments may exhibit improved current uniformity, lower forward operating voltage, and higher overall efficiency.
摘要翻译： 根据本发明的非限制性实施例的氮化物发光器件（LED）可以包括p焊盘和n焊盘，其中p焊盘和n焊盘设置在器件的相对端。 第一p支电极和第二p分支电极可以从p焊盘朝向n焊盘延伸，其中第一p分支电极沿着器件的长度延伸。 第二p分支电极可以具有弯曲部分，以沿着装置的宽度和长度延伸。 n支电极可以从n焊盘延伸到p焊盘，其中n支电极的远端朝向第二p分支电极的弯曲部分成角度。 或者，p分支电极和n支电极可以被配置为使得n分支电极与第一和第二p分支电极之间的距离随着n焊盘的接近而增加。 结果，根据示例性实施例的基于氮化物的LED可以表现出改善的电流均匀性，较低的正向工作电压和更高的总体效率。
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