摘要:
Etch selectivity enhancement during electron beam activated chemical etch (EBACE) is disclosed. A target or portion thereof may be exposed to a gas composition of a type that etches the target when the gas composition and/or target are exposed to an electron beam. By directing an electron beam toward the target in the vicinity of the gas composition, an interaction between the electron beam and the gas composition etches a portion of the target exposed to both the gas composition and the electron beam. Selectivity of etching of the target due to interaction between the electron beam and gas composition may be enhanced in a number of ways.
摘要:
Etch selectivity enhancement during electron beam activated chemical etch (EBACE) is disclosed. A target or portion thereof may be exposed to a gas composition of a type that etches the target when the gas composition and/or target are exposed to an electron beam. By directing an electron beam toward the target in the vicinity of the gas composition, an interaction between the electron beam and the gas composition etches a portion of the target exposed to both the gas composition and the electron beam. Selectivity of etching of the target due to interaction between the electron beam and gas composition may be enhanced in a number of ways.
摘要:
Methods and apparatus for imaging a structure and a related processor-readable medium are disclosed. A surface of a substrate (or a portion thereof) is exposed to a gas composition. The gas composition includes one or more components that etch the substrate upon activation by interaction with a beam of electrons. A beam of electrons is directed to one or more portions of the surface of the substrate that are exposed to the gas composition to etch the one or more portions. A plurality of images is obtained of the one or more portions at different instances of time as the one or more portions are etched. A three-dimensional model of one or more structures embedded within the one or more portions of the substrate is generated from the plurality of images.
摘要:
Methods and apparatus for imaging a structure and a related processor-readable medium are disclosed. A surface of a substrate (or a portion thereof) is exposed to a gas composition. The gas composition includes one or more components that etch the substrate upon activation by interaction with a beam of electrons. A beam of electrons is directed to one or more portions of the surface of the substrate that are exposed to the gas composition to etch the one or more portions. A plurality of images is obtained of the one or more portions at different instances of time as the one or more portions are etched. A three-dimensional model of one or more structures embedded within the one or more portions of the substrate is generated from the plurality of images.
摘要:
One embodiment relates to an electron beam apparatus. The apparatus includes a source for generating an incident electron beam, an electron lens for focusing the incident electron beam so that the beam impinges upon a substrate surface and interacts with surface material so as to cause secondary emission of scattered electrons, and a detector configured to detect the scattered electrons. The apparatus further includes an advantageous device configured to trap the scattered electrons which are emitted at sharp angles relative to the sample surface plane of the substrate surface. Other embodiments are also disclosed.
摘要:
The present invention is a novel multilayered structure comprising alternating layers of a base metal and a metal selected from a group of barrier metals. The base metal, in any given layer, is deposited to a thickness less than its critical thickness--a thickness beyond which hillocks are more likely to form for a given temperature. Between each such layer of base metal, a layer of barrier metal is interposed. The intervening layer of barrier metal acts to suppress the formation of hillocks in the base metal.
摘要:
A thin-film structure on an insulating substrate includes an array of binary control units with an area of at least 90 cm.sup.2 and a density of at least 60 binary control units per cm. One implementation has an area of approximately 510 cm.sup.2, a diagonal of approximately 33 cm, and a total of approximately 6.3 million binary control units. Each binary control unit has a lead for receiving a unit drive signal, to which it responds by causing presentation of a segment of images presented by the array. Each binary control unit can present a segment with either a first color having a maximum intensity or a second color having a minimum intensity. Each binary control unit's unit drive signal causes the binary control unit to present its first and second colors. The substrate can be glass. Each binary control unit can include an amorphous silicon thin-film transistor (TFT) and a storage capacitor. Each binary control unit can be square. The thin-film structure can be used in an active matrix liquid crystal display (AMLCD), monochrome or, with an appropriate filter, color.
摘要:
A feature in a thin-film structure such as an AMLCD array has an edge with a tapered sidewall profile, reducing step coverage problems. The feature can be produced by producing a layer in which local etch rates vary in the thickness direction of the layer. The layer can then be etched to produce the feature with the tapered sidewall profile. The layer can be produced by physical vapor deposition. The layer can, for example, includes sublayers with different etch rates, either due to different atomic proportions of constituents or due to different etchants. Or local etch rates can vary continuously as a result of changing deposition conditions. Differences in etch rates or differences in etchant mixtures can be used to obtain a desired angle of elevation.
摘要:
A conductive line in a thin-film structure such as an AMLCD array includes molybdenum and chromium so that it can be processed in a manner similar to chromium but has a greater conductivity than chromium due to the molybdenum. The conductive line can be produced by physical vapor deposition of a layer of a molybdenum-chromium (MoCr) alloy, which can then be masked and etched using photolithographic techniques in a manner similar to chromium. Proportions between 15 and 85 atomic percent of molybdenum can be processed more easily than pure molybdenum and are more conductive than pure chromium. Lines with between 40 and 60 atomic percent molybdenum can be used with a margin of error. To produce a tapered conductive line, sublayers of MoCr alloys with different etch rates can be produced and etched.