Use of ion implantation in chemical etching
    4.
    发明授权
    Use of ion implantation in chemical etching 有权
    在化学蚀刻中使用离子注入

    公开(公告)号:US08008207B2

    公开(公告)日:2011-08-30

    申请号:US11752829

    申请日:2007-05-23

    IPC分类号: H01L21/302 H01L21/461

    摘要: A method for controlling chemical dry etching to improve smoothness of an etched surface is disclosed. Ions are implanted into a surface to form a volatilizable compound at a temperature low enough to avoid, reduce, or eliminate formation of three-dimensional structures of the volatilizable compound that might create the roughness at an etched surface of the volatilizable compound. The ions are applied in a sufficient energy to penetrate to a predetermined depth of material that is to be removed from the surface in an etching cycle, and in a sufficient dosage to achieve full formation of the volatilizable compound. The surface of the volatilizable compound is exposed to a gas composition for a time duration sufficient to completely etch the volatilizable compound.

    摘要翻译: 公开了一种用于控制化学干蚀刻以改善蚀刻表面的平滑度的方法。 将离子植入表面以在足够低的温度下形成可挥发化合物,以避免,减少或消除可挥发化合物的三维结构的形成,这可能在可挥发化合物的蚀刻表面产生粗糙度。 以足够的能量施加离子以在蚀刻循环中渗透到要从表面除去的预定深度的材料,并以足够的剂量实现完全形成可挥发化合物。 可挥发化合物的表面暴露于气体组合物持续足够时间以完全蚀刻可挥发化合物。