公开(公告)号：US08278192B2

公开(公告)日：2012-10-02

申请号：US12702187

申请日：2010-02-08

申请人： David Xuan-Qi Wang ,  Mehrdad Moslehi

发明人： David Xuan-Qi Wang ,  Mehrdad Moslehi

IPC分类号： H01L21/46 ,  H01L21/76

CPC分类号： H01L31/035281 ,  H01L21/76229 ,  H01L21/76232 ,  H01L31/03529 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method is provided for fabricating a thin-film semiconductor substrate by forming a porous semiconductor layer conformally on a reusable semiconductor template and then forming a thin-film semiconductor substrate conformally on the porous semiconductor layer. An inner trench having a depth less than the thickness of the thin-film semiconductor substrate is formed on the thin-film semiconductor substrate. An outer trench providing access to the porous semiconductor layer is formed on the thin-film semiconductor substrate and is positioned between the inner trench and the edge of the thin-film semiconductor substrate. The thin-film semiconductor substrate is then released from the reusable semiconductor template.

摘要翻译： 提供了一种用于通过在可重复使用的半导体模板上保形地形成多孔半导体层然后在多孔半导体层上保形地形成薄膜半导体衬底来制造薄膜半导体衬底的方法。 在薄膜半导体衬底上形成深度小于薄膜半导体衬底厚度的内沟槽。 提供对多孔半导体层的访问的外部沟槽形成在薄膜半导体衬底上并且位于内部沟槽和薄膜半导体衬底的边缘之间。 然后从可重复使用的半导体模板中释放薄膜半导体衬底。

公开(公告)号：US20100203711A1

公开(公告)日：2010-08-12

申请号：US12702187

申请日：2010-02-08

申请人： David Xuan-Qi Wang ,  Mehrdad Moslehi

发明人： David Xuan-Qi Wang ,  Mehrdad Moslehi

IPC分类号： H01L21/20

CPC分类号： H01L31/035281 ,  H01L21/76229 ,  H01L21/76232 ,  H01L31/03529 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method is provided for fabricating a thin-film semiconductor substrate by forming a porous semiconductor layer conformally on a reusable semiconductor template and then forming a thin-film semiconductor substrate conformally on the porous semiconductor layer. An inner trench having a depth less than the thickness of the thin-film semiconductor substrate is formed on the thin-film semiconductor substrate. An outer trench providing access to the porous semiconductor layer is formed on the thin-film semiconductor substrate and is positioned between the inner trench and the edge of the thin-film semiconductor substrate. The thin-film semiconductor substrate is then released from the reusable semiconductor template.

摘要翻译： 提供了一种用于通过在可重复使用的半导体模板上保形地形成多孔半导体层然后在多孔半导体层上保形地形成薄膜半导体衬底来制造薄膜半导体衬底的方法。 在薄膜半导体衬底上形成深度小于薄膜半导体衬底厚度的内沟槽。 提供对多孔半导体层的访问的外部沟槽形成在薄膜半导体衬底上并且位于内部沟槽和薄膜半导体衬底的边缘之间。 然后从可重复使用的半导体模板中释放薄膜半导体衬底。

公开(公告)号：US08853521B2

公开(公告)日：2014-10-07

申请号：US13193302

申请日：2011-07-28

申请人： Mehrdad Moslehi ,  David Xuan-Qi Wang

发明人： Mehrdad Moslehi ,  David Xuan-Qi Wang

IPC分类号： H01L31/18 ,  H01L31/0352 ,  H01L31/04

CPC分类号： H01L31/1804 ,  H01L31/0352 ,  H01L31/035281 ,  H01L31/04 ,  H01L31/1892 ,  Y02E10/547 ,  Y02P70/521

摘要： The present disclosure presents a partially-transparent (see-through) three-dimensional thin film solar cell (3-D TFSC) substrate. The substrate includes a plurality of unit cells. Each unit cell structure has the shape of a truncated pyramid, and its parameters may be varied to allow a desired portion of sunlight to pass through.

摘要翻译： 本公开提供了部分透明（透明）三维薄膜太阳能电池（3-D TFSC）基板。 基板包括多个单元电池。 每个单元电池结构具有截头棱锥形状，并且其参数可以变化以允许期望的太阳光部分通过。

公开(公告)号：US20130273721A1

公开(公告)日：2013-10-17

申请号：US13633723

申请日：2012-10-02

申请人： David Xuan-Qi Wang ,  Mehrdad Moslehi

发明人： David Xuan-Qi Wang ,  Mehrdad Moslehi

IPC分类号： H01L21/02

CPC分类号： H01L21/0243 ,  F16L21/035 ,  H01L21/7806 ,  H01L21/7813 ,  H01L31/00

摘要： A method is provided for fabricating a thin-film semiconductor substrate by forming a porous semiconductor layer conformally on a reusable semiconductor template and then forming a thin-film semiconductor substrate conformally on the porous semiconductor layer. An inner trench having a depth less than the thickness of the thin-film semiconductor substrate is formed on the thin-film semiconductor substrate. An outer trench providing access to the porous semiconductor layer is formed on the thin-film semiconductor substrate and is positioned between the inner trench and the edge of the thin-film semiconductor substrate. The thin-film semiconductor substrate is then released from the reusable semiconductor template.

摘要翻译： 提供了一种用于通过在可重复使用的半导体模板上保形地形成多孔半导体层然后在多孔半导体层上保形地形成薄膜半导体衬底来制造薄膜半导体衬底的方法。 在薄膜半导体衬底上形成深度小于薄膜半导体衬底厚度的内沟槽。 提供对多孔半导体层的访问的外部沟槽形成在薄膜半导体衬底上并且位于内部沟槽和薄膜半导体衬底的边缘之间。 然后从可重复使用的半导体模板中释放薄膜半导体衬底。

公开(公告)号：US20130140838A1

公开(公告)日：2013-06-06

申请号：US13515848

申请日：2010-12-15

申请人： David Xuan-Qi Wang ,  Mehrdad Moslehi

发明人： David Xuan-Qi Wang ,  Mehrdad Moslehi

IPC分类号： H01L21/677

CPC分类号： H01L21/677 ,  H01L21/6838 ,  H01L21/6875

摘要： This disclosure presents mobile vacuum carriers that may be used to support thin substrates that would otherwise be too brittle to transport and process. This disclosure relates to the processing of thin semiconductor substrates and has particular applicability to the fields of photovoltaic solar cells, semiconductor microelectronic integrated circuits, micro-electro-mechanical systems (MEMS), optoelectronic devices (such as light-emitting diodes, lasers, photo detectors), data storage devices, etc.

摘要翻译： 本公开提供可移动真空载体，其可以用于支撑否则对于运输和加工过于脆弱的薄基底。 本公开涉及薄半导体衬底的处理，并且特别适用于光伏太阳能电池，半导体微电子集成电路，微电子机械系统（MEMS），光电子器件（例如发光二极管，激光器，照片 检测器），数据存储设备等

公开(公告)号：US20080289684A1

公开(公告)日：2008-11-27

申请号：US11868493

申请日：2007-10-06

申请人： Mehrdad Moslehi

发明人： Mehrdad Moslehi

IPC分类号： H01L31/00

CPC分类号： H01L31/00 ,  H01L31/022425 ,  H01L31/035281 ,  H01L31/046 ,  H01L31/048 ,  H01L31/0504 ,  H01L31/0547 ,  H01L31/056 ,  H01L31/1896 ,  Y02B10/12 ,  Y02E10/52

摘要： A pyramidal three-dimensional thin-film solar cell, comprising a pyramidal three-dimensional thin-film solar cell substrate comprising a plurality of pyramid-shaped unit cells with emitter junction regions and doped base regions, emitter metallization regions and base metallization regions. Optionally, the pyramidal three-dimensional thin-film solar cell may be mounted on a rear mirror for improved light trapping and conversion efficiency.

摘要翻译： 一种金字塔形三维薄膜太阳能电池，包括具有多个具有发射极结区域和掺杂基极区域的金字塔形单元电池的金字塔形三维薄膜太阳能电池基板，发射极金属化区域和基底金属化区域。 可选地，金字塔形三维薄膜太阳能电池可以安装在后视镜上，以提高光捕获和转换效率。

公开(公告)号：US20080047601A1

公开(公告)日：2008-02-28

申请号：US11841629

申请日：2007-08-20

申请人： Somnath Nag ,  Mehrdad Moslehi

发明人： Somnath Nag ,  Mehrdad Moslehi

IPC分类号： H01L31/04 ,  H01L21/00

CPC分类号： H01L31/03529 ,  H01L31/07 ,  Y02E10/50

摘要： A Schottky contact photovoltaic energy conversion cell. The Schottky contact photovoltaic energy conversion cell comprises a flexible substrate and a first array of a plurality of closely-spaced microscale pillars connected to a first electrical cell contact. The pillars and the contact are formed of (or having a top) layer of a first Schottky metal material with a work function selected for efficiently collecting photogenerated electrons. The Schottky contact photovoltaic energy conversion cell further comprises a second array of a plurality of closely-spaced microscale pillars connected to a second electrical cell contact. The pillars and the contact are formed of (or having a top) layer of a second Schottky metal material with a work function selected for efficiently collecting photogenerated holes. The Schottky contact photovoltaic energy conversion cell further comprises a semiconductor absorber thin-film layer covering the first and second contacts and filling spaces among all the pillars, for creating photogenerated electrons and holes.

摘要翻译： 肖特基接触光伏能量转换电池。 肖特基接触光伏能量转换单元包括柔性基板和连接到第一电单元接触件的多个紧密间隔的微米柱的第一阵列。 柱和接触由具有选择用于有效收集光生电子的功函数的第一肖特基金属材料（或具有顶部）层形成。 肖特基接触光伏能量转换单元还包括连接到第二电池触点的多个紧密间隔的微小柱的第二阵列。 支柱和接触由具有选择用于有效收集光生孔的功函数的（或具有顶部）第二肖特基金属材料层形成。 肖特基接触光伏能量转换单元还包括覆盖所有第一和第二触点和填充空间的半导体吸收体薄膜层，用于产生光生电子和空穴。

公开(公告)号：US20090301549A1

公开(公告)日：2009-12-10

申请号：US11868491

申请日：2007-10-06

申请人： Mehrdad Moslehi

发明人： Mehrdad Moslehi

IPC分类号： H01L31/048 ,  H01L31/042 ,  H01L31/18

CPC分类号： H01L31/0504 ,  H01L31/042 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/048 ,  H01L31/05 ,  H01L31/056 ,  H01L31/18 ,  Y02B10/12 ,  Y02E10/50

摘要： Solar module structures 210 and 270 and methods for assembling solar module structures. The solar module structures 210 and 270 comprise three-dimensional thin-film solar cells 110 arranged in solar module structures 210 and 270. The three-dimensional thin-film solar cell comprises a three-dimensional thin-film solar cell substrate (124 and 122, respectively) with emitter junction regions 1352 and doped base regions 1360. The three-dimensional thin-film solar cell further includes emitter metallization regions and base metallization regions. The 3-D TFSC substrate comprises a plurality of single-aperture or dual-aperture unit cells. The solar module structures 270 using three-dimensional thin-film solar cells comprising three-dimensional thin-film solar cell substrates with a plurality of dual-aperture unit cells may be used in solar glass applications. The solar module structures 210 using three-dimensional thin-film solar cells comprising three-dimensional thin-film solar cell substrates with a plurality of single-aperture unit cells may be used in building façade and rooftop installation applications as well as for centralized solar electricity generation.

摘要翻译： 太阳能模块结构210和270以及用于组装太阳能模块结构的方法。 太阳能模块结构210和270包括布置在太阳能模块结构210和270中的三维薄膜太阳能电池110.三维薄膜太阳能电池包括三维薄膜太阳能电池基板（124和122 ，分别具有发射极结区域1352和掺杂基极区域1360.三维薄膜太阳能电池还包括发射极金属化区域和基底金属化区域。 3-D TFSC基板包括多个单孔或双孔单元电池。 使用包括具有多个双孔单元电池的三维薄膜太阳能电池基板的三维薄膜太阳能电池的太阳能模块结构270可以用于太阳能玻璃应用中。 使用包括具有多个单孔单元电池的三维薄膜太阳能电池基板的三维薄膜太阳能电池的太阳能模块结构210可以用于建筑立面和屋顶安装应用以及集中式太阳能发电 代。

公开(公告)号：US06592728B1

公开(公告)日：2003-07-15

申请号：US09130527

申请日：1998-08-04

申请人： Ajit Paranjpe ,  Peter Schwartz ,  Jacques Kools ,  Kang Song ,  Dorian Heimanson ,  Mehrdad Moslehi

发明人： Ajit Paranjpe ,  Peter Schwartz ,  Jacques Kools ,  Kang Song ,  Dorian Heimanson ,  Mehrdad Moslehi

IPC分类号： C23C1434

CPC分类号： H01J37/3447 ,  C23C14/046 ,  C23C14/221 ,  C23C14/34 ,  G11B5/3163 ,  H01J37/34

摘要： A dual collimation deposition apparatus and method are disclosed in which the dual collimation apparatus includes at least a long-throw collimator in combination with one or more physical collimators. A new physical collimator and shield design are also disclosed for improved process uniformity and increased equipment productivity.

公开(公告)号：US5322809A

公开(公告)日：1994-06-21

申请号：US60774

申请日：1993-05-11

申请人： Mehrdad Moslehi

发明人： Mehrdad Moslehi

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L29/78 ,  H01L21/283

CPC分类号： H01L29/66507 ,  H01L21/28518 ,  H01L29/6659 ,  H01L29/66545 ,  Y10S148/019 ,  Y10S148/147

摘要： A self-aligned silicide process that enables different silicide thicknesses for polysilicon gates and source/drain junction regions. Semiconductor body (10) includes a doped well (14) formed in substrate (12). Field insulating region (18) is located above channel stop region (16) in doped well (14). Implanted within doped well (14) are source/drain junctions (34). Source/drain junctions (34) are shallow heavily doped regions. The surfaces of source/drain junctions (34) are silicided. Silicide gate (44) is separated from the surface of doped well (14) by gate insulator layer (20) and contains a silicide layer (40) and a doped polysilicon layer (22). The thickness of silicide layer (40) is not limited by the thickness of the silicided surfaces of source/drain junctions (34) or the amount of silicon consumed over these junctions. Silicon nitride sidewall spacers (32) separate the sidewall edges of silicide gate (44) and the transistor channel region from the source/drain junction silicide layer 41.

摘要翻译： 自对准硅化物工艺，其能够实现多晶硅栅极和源极/漏极结区域的不同硅化物厚度。 半导体本体（10）包括形成在衬底（12）中的掺杂阱（14）。 场绝缘区域（18）位于掺杂阱（14）中的通道停止区域（16）的上方。 掺杂在掺杂阱（14）内的是源极/漏极结（34）。 源极/漏极结（34）是浅重掺杂区域。 源极/漏极结（34）的表面被硅化。 硅化物栅极（44）通过栅极绝缘体层（20）与掺杂阱（14）的表面分离，并且包含硅化物层（40）和掺杂多晶硅层（22）。 硅化物层（40）的厚度不受源极/漏极结（34）的硅化物表面的厚度或在这些结上消耗的硅的量的限制。 氮化硅侧壁间隔件（32）将硅化物栅极（44）的侧壁边缘和晶体管沟道区域与源极/漏极结硅化物层41分离。