METHOD FOR FORMING POLYCRYSTALLINE FILM, POLYCRYSTALLINE FILM AND THIN FILM TRANSISTOR FABRICATED FROM THE POLYCRYSTALLINE FILM
    1.
    发明申请
    METHOD FOR FORMING POLYCRYSTALLINE FILM, POLYCRYSTALLINE FILM AND THIN FILM TRANSISTOR FABRICATED FROM THE POLYCRYSTALLINE FILM 有权
    形成多晶薄膜的方法,由多晶薄膜制成的多晶薄膜和薄膜晶体管

    公开(公告)号:US20130277677A1

    公开(公告)日:2013-10-24

    申请号:US13583851

    申请日:2012-08-02

    IPC分类号: H01L29/786 H01L29/04

    摘要: A method for forming a polycrystalline film, a polycrystalline film formed by the method and a thin film transistor fabricated from the polycrystalline film are provided. The method comprises the steps of: providing a substrate; forming a thermal conductor layer on the substrate; etching the thermal conductor layer until the substrate is exposed to form a thermal conductor pattern; forming a seed layer on the thermal conductor layer and the substrate; etching the seed layer to form seed crystals on both sidewalls of the thermal conductor; forming an amorphous layer on the substrate, the thermal conductor layer and the seed crystals; etching the amorphous layer; and recrystallizing the amorphous layer to form a polycrystalline layer.

    摘要翻译: 提供一种形成多晶膜的方法,通过该方法形成的多晶膜和由多晶膜制造的薄膜晶体管。 该方法包括以下步骤:提供衬底; 在所述基板上形成热导体层; 蚀刻热导体层,直到基板被暴露以形成热导体图案; 在导热体层和基板上形成晶种层; 蚀刻种子层以在热导体的两个侧壁上形成晶种; 在基板上形成非晶层,热导体层和晶种; 蚀刻非晶层; 并使非晶层重结晶以形成多晶层。

    High-K gate dielectric with work function adjustment metal layer
    2.
    发明授权
    High-K gate dielectric with work function adjustment metal layer 有权
    高K栅极电介质具有功能调整金属层

    公开(公告)号:US08860143B2

    公开(公告)日:2014-10-14

    申请号:US13202411

    申请日:2011-08-02

    摘要: A semiconductor structure is provided. The semiconductor structure comprises: a substrate; a gate dielectric layer formed on the substrate; a metal gate electrode layer formed on the gate dielectric layer; and at least one metal-containing adjusting layer for adjusting a work function of the semiconductor structure, in which an interfacial layer is formed between the substrate and the gate dielectric layer, and an energy of bond between a metal atom in the metal-containing adjusting layer and an oxygen atom is larger than that between an atom of materials forming the gate dielectric layer or the interfacial layer and an oxygen atom. Further, a method for forming the semiconductor structure is also provided.

    摘要翻译: 提供半导体结构。 半导体结构包括:基板; 形成在所述基板上的栅介质层; 形成在栅介质层上的金属栅电极层; 以及至少一个用于调节半导体结构的功函数的含金属的调节层,其中在所述基底和所述栅极电介质层之间形成界面层,以及所述含金属调节中的金属原子之间的键的能量 层和氧原子大于形成栅极介电层或界面层的材料的原子和氧原子之间的氧原子。 此外,还提供了一种用于形成半导体结构的方法。

    SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
    3.
    发明申请
    SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME 有权
    半导体结构及其形成方法

    公开(公告)号:US20120292711A1

    公开(公告)日:2012-11-22

    申请号:US13202411

    申请日:2011-08-02

    IPC分类号: H01L27/092 H01L21/336

    摘要: A semiconductor structure is provided. The semiconductor structure comprises: a substrate; a gate dielectric layer formed on the substrate; a metal gate electrode layer formed on the gate dielectric layer; and at least one metal-containing adjusting layer for adjusting a work function of the semiconductor structure, in which an interfacial layer is formed between the substrate and the gate dielectric layer, and an energy of bond between a metal atom in the metal-containing adjusting layer and an oxygen atom is larger than that between an atom of materials forming the gate dielectric layer or the interfacial layer and an oxygen atom. Further, a method for forming the semiconductor structure is also provided.

    摘要翻译: 提供半导体结构。 半导体结构包括:基板; 形成在所述基板上的栅介质层; 形成在栅介质层上的金属栅电极层; 以及至少一个用于调节半导体结构的功函数的含金属的调节层,其中在所述基底和所述栅极电介质层之间形成界面层,并且所述含金属调节中的金属原子之间的键能 层和氧原子大于形成栅极介电层或界面层的材料的原子和氧原子之间的氧原子。 此外,还提供了一种用于形成半导体结构的方法。

    Method for forming polycrystalline film, polycrystalline film and thin film transistor fabricated from the polycrystalline film
    4.
    发明授权
    Method for forming polycrystalline film, polycrystalline film and thin film transistor fabricated from the polycrystalline film 有权
    用于形成由多晶膜制造的多晶膜,多晶膜和薄膜晶体管的方法

    公开(公告)号:US08785938B2

    公开(公告)日:2014-07-22

    申请号:US13583851

    申请日:2012-08-02

    IPC分类号: H01L29/786 H01L29/04

    摘要: A method for forming a polycrystalline film, a polycrystalline film formed by the method and a thin film transistor fabricated from the polycrystalline film are provided. The method comprises the steps of: providing a substrate; forming a thermal conductor layer on the substrate; etching the thermal conductor layer until the substrate is exposed to form a thermal conductor pattern; forming a seed layer on the thermal conductor layer and the substrate; etching the seed layer to form seed crystals on both sidewalls of the thermal conductor; forming an amorphous layer on the substrate, the thermal conductor layer and the seed crystals; etching the amorphous layer; and recrystallizing the amorphous layer to form a polycrystalline layer.

    摘要翻译: 提供一种形成多晶膜的方法,通过该方法形成的多晶膜和由多晶膜制造的薄膜晶体管。 该方法包括以下步骤:提供衬底; 在所述基板上形成热导体层; 蚀刻热导体层,直到基板被暴露以形成热导体图案; 在导热体层和基板上形成晶种层; 蚀刻种子层以在热导体的两个侧壁上形成晶种; 在基板上形成非晶层,热导体层和晶种; 蚀刻非晶层; 并使非晶层重结晶以形成多晶层。

    SCHOTTKY BARRIER FIELD EFFECT TRANSISTOR WITH CARBON-CONTAINING INSULATION LAYER AND METHOD FOR FABRICATING THE SAME
    5.
    发明申请
    SCHOTTKY BARRIER FIELD EFFECT TRANSISTOR WITH CARBON-CONTAINING INSULATION LAYER AND METHOD FOR FABRICATING THE SAME 审中-公开
    具有含碳绝缘层的肖特基栅栏场效应晶体管及其制造方法

    公开(公告)号:US20130200444A1

    公开(公告)日:2013-08-08

    申请号:US13583121

    申请日:2012-03-22

    IPC分类号: H01L29/78 H01L21/336

    摘要: A Schottky barrier field effect transistor with a carbon-containing insulation layer and a method for fabricating the same are provided. The Schottky barrier field effect transistor comprises: a substrate; a gate stack formed on the substrate; a metal source and a metal drain formed in the substrate on both sides of the gate stack respectively; and the carbon-containing insulation layer formed between the substrate and the metal source and between the substrate and the metal drain respectively, in which a material of the carbon-containing insulation layer is organic molecular chains containing an alkyl group.

    摘要翻译: 提供了具有含碳绝缘层的肖特基势垒场效应晶体管及其制造方法。 肖特基势垒场效应晶体管包括:衬底; 形成在所述基板上的栅极堆叠; 金属源和金属漏极分别形成在栅极堆叠两侧的基板中; 以及分别形成在基板和金属源之间以及基板和金属排出口之间的含碳绝缘层,其中含碳绝缘层的材料是含有烷基的有机分子链。

    MOBILE COMMUNICATION DEVICE WITH GRAPHICAL USER INTERFACE TO ENABLE ACCESS TO PORTAL SERVICES
    6.
    发明申请
    MOBILE COMMUNICATION DEVICE WITH GRAPHICAL USER INTERFACE TO ENABLE ACCESS TO PORTAL SERVICES 审中-公开
    具有图形用户界面的移动通信设备,无法访问门户服务

    公开(公告)号:US20090319947A1

    公开(公告)日:2009-12-24

    申请号:US12143820

    申请日:2008-06-22

    IPC分类号: G06F3/048

    CPC分类号: H04M1/72583 G06F3/04817

    摘要: Systems, methods, and devices for accessing portal services via a mobile communication device are provided. The mobile communication device may execute a menu program having a graphical user interface. The graphical user interface may include a service menu screen including a plurality of service selectors, each service selector having a respective service icon positioned within a boundary, the service icon graphically representing a service of a communications portal with which the mobile communication device is configured to communicate. Each respective service icon may be selectable by a user to access a corresponding client program of the associated service served by the communications portal. At least some of the service selectors may further include a shared status icon indicating an operational state of the service and/or associated client program.

    摘要翻译: 提供了通过移动通信设备访问门户服务的系统,方法和设备。 移动通信设备可以执行具有图形用户界面的菜单程序。 图形用户界面可以包括包括多个服务选择器的服务菜单屏幕,每个服务选择器具有位于边界内的相应服务图标,该服务图标以图形方式表示移动通信设备配置为的通信门户的服务 通信。 每个相应的服务图标可以由用户选择以访问由通信门户服务的相关联的服务的对应的客户端程序。 至少一些服务选择器还可以包括指示服务和/或相关联的客户端程序的操作状态的共享状态图标。

    Integrated Health Data Navigator Based On A Single Timeline
    7.
    发明申请
    Integrated Health Data Navigator Based On A Single Timeline 审中-公开
    基于单个时间轴的集成健康数据导航器

    公开(公告)号:US20130346106A1

    公开(公告)日:2013-12-26

    申请号:US13530929

    申请日:2012-06-22

    IPC分类号: G06Q50/24

    CPC分类号: G06Q10/10 G06Q50/24

    摘要: Systems, methods, and computer program products for facilitating the navigation of patient clinical data based on a single timeline are disclosed. In an embodiment, such integrated view allows users to navigate through patient health data using a conceptual linkage based on common attributes. Users may also, through use of a Unified Data Navigator built on a web-based client, configure and customize such patient health data displays and save selected settings as personal views.

    摘要翻译: 公开了用于促进基于单一时间线的患者临床数据导航的系统,方法和计算机程序产品。 在一个实施例中,这种集成视图允许用户使用基于共同属性的概念链接导航患者健康数据。 用户还可以通过使用基于Web的客户端上的统一数据导航器来配置和定制此类患者健康数据显示,并将所选设置保存为个人视图。