利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

14 条记录 (耗时 0.022 秒)

    ALTERNATIVE INTEGRATION SCHEME FOR CMOS S/D SiGe PROCESS
    1.
    发明申请
    ALTERNATIVE INTEGRATION SCHEME FOR CMOS S/D SiGe PROCESS 审中-公开
    CMOS S / D SiGe工艺的替代整合方案

    公开(公告)号：US20070287244A1

    公开(公告)日：2007-12-13

    申请号：US11739099

    申请日：2007-04-24

    申请人： Meihua Shen ,  Yonah Cho ,  Mark Kawaguchi ,  Faran Nouri ,  Diana Ma

    发明人： Meihua Shen ,  Yonah Cho ,  Mark Kawaguchi ,  Faran Nouri ,  Diana Ma

    IPC分类号： H01L21/8236

    CPC分类号： H01L21/823814 ,  H01L21/823864

    摘要： A method for fabricating a semiconductor device with adjacent PMOS and NMOS devices on a substrate includes forming a PMOS gate electrode with a PMOS hardmask on a semiconductor substrate with a PMOS gate dielectric layer in between, forming an NMOS gate electrode with an NMOS hardmask on a semiconductor substrate with an NMOS gate dielectric layer in between, forming an oxide liner over a portion of the PMOS gate electrode and over a portion of the NMOS gate electrode, forming a lightly doped N-Halo implant, depositing a nitride layer over the oxide liner, depositing photoresist on the semiconductor substrate in a pattern that covers the NMOS device, etching the nitride layer from the PMOS device, wherein the etching nitride layer leaves a portion of the nitride layer on the oxide liner, etching semiconductor substrate to form a Si recess, and depositing SiGe into the Si recesses, wherein the SiGe and the nitride layer enclose the oxide liner. The method can also include implanting in the semiconductor substrate a source and drain region for the PMOS.

    摘要翻译： 一种用于在衬底上制造具有相邻PMOS和NMOS器件的半导体器件的方法包括在半导体衬底上形成具有PMOS硬掩模的PMOS栅电极，其间具有PMOS栅极介电层，在NMOS栅极上形成NMOS栅极 半导体衬底，其间具有NMOS栅极介电层，在PMOS栅电极的一部分上方和NMOS栅电极的一部分之上形成氧化物衬垫，形成轻掺杂的N-Halo注入，在氧化物衬垫上沉积氮化物层 以覆盖所述NMOS器件的图案沉积在所述半导体衬底上的光致抗蚀剂，从所述PMOS器件蚀刻所述氮化物层，其中所述蚀刻氮化物层离开所述氧化物衬底上的所述氮化物层的一部分，蚀刻半导体衬底以形成Si凹槽 并且将SiGe沉积到Si凹部中，其中SiGe和氮化物层包围氧化物衬垫。 该方法还可以包括在半导体衬底中注入用于PMOS的源极和漏极区域。

    CMOS S/D SiGe DEVICE MADE WITH ALTERNATIVE INTEGRATION PROCESS
    2.
    发明申请
    CMOS S/D SiGe DEVICE MADE WITH ALTERNATIVE INTEGRATION PROCESS 审中-公开
    CMOS S / D SiGe器件与替代整合过程

    公开(公告)号：US20070284668A1

    公开(公告)日：2007-12-13

    申请号：US11739103

    申请日：2007-04-24

    申请人： Meihua Shen ,  Yonah Cho ,  Mark Kawaguchi ,  Faran Nouri ,  Diana Ma

    发明人： Meihua Shen ,  Yonah Cho ,  Mark Kawaguchi ,  Faran Nouri ,  Diana Ma

    IPC分类号： H01L21/8238

    CPC分类号： H01L21/823814 ,  H01L21/28044 ,  H01L21/823807 ,  H01L29/165 ,  H01L29/518 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7848

    摘要： A semiconductor device includes a substrate having regions filled with an additive that forms a source/drain for a MOS device, a gate dielectric layer deposited over the substrate, the gate dielectric layer electrically isolates the substrate from subsequently deposited layers, a gate electrode deposited over the gate dielectric layer, an oxide liner formed along laterally opposite sidewalls of the gate electrode, a nitride layer formed along the oxide liner extending above the gate electrode, and wherein the additive and the nitride layer enclose the gate electrode.

    摘要翻译： 半导体器件包括具有填充有添加剂的区域的衬底，其形成用于MOS器件的源极/漏极，沉积在衬底上的栅极电介质层，栅极介电层将衬底与随后沉积的层电隔离，栅极电极沉积在 栅极电介质层，沿着栅电极的横向相对的侧壁形成的氧化物衬垫，沿着在栅电极上方延伸的氧化物衬垫形成的氮化物层，并且其中添加剂和氮化物层包围栅电极。

    Method for recovering metal from etch by-products
    3.
    发明授权
    Method for recovering metal from etch by-products 失效
    从蚀刻副产物中回收金属的方法

    公开(公告)号：US06413389B1

    公开(公告)日：2002-07-02

    申请号：US09467295

    申请日：1999-12-17

    申请人： Hong Shih ,  Danny Lu ,  Nianci Han ,  Li Xu ,  Diana Ma

    发明人： Hong Shih ,  Danny Lu ,  Nianci Han ,  Li Xu ,  Diana Ma

    IPC分类号： C02F1461

    CPC分类号： C22B11/042 ,  Y02P10/214

    摘要： A method and assembly for recovering a metal from by-products produced from etching a metal (e.g., platinum, iridium, aluminum, etc.) in a plasma processing chamber. The method includes recovering from the plasma processing chamber a deposit of the by-products containing the metal. The deposit is dissolved in an acid, and the metal is recovered from the acid by inserting a working electrode, a reference electrode, and a counter electrode into the acid and applying a difference in potential between the working and reference electrodes to cause current to flow through the working and counter electrodes and the metal to be removed from the liquid and deposit on the working electrode. The metal is removed from the working electrode to recover the metal. The assembly for recovering the metal from the by-products includes a potentiostat for effecting a difference in potential between the working and reference electrodes and causing current to flow through the working and counter electrodes in response to the difference in potential between the working and reference electrodes.

    摘要翻译： 一种用于从在等离子体处理室中蚀刻金属（例如，铂，铱，铝等）产生的副产物中回收金属的方法和组件。 该方法包括从等离子体处理室回收含有金属的副产物的沉积物。 将沉积物溶解在酸中，通过将工作电极，参比电极和对电极插入酸中并在工作电极和参考电极之间施加电位差以使电流流动从酸中回收金属 通过工作电极和对电极以及从液体中除去的金属沉积在工作电极上。 从工作电极上除去金属以回收金属。 用于从副产物中回收金属的组件包括用于实现工作电极和参考电极之间的电位差的恒电位仪，并且响应于工作电极和参考电极之间的电位差而导致电流流过工作电极和对电极 。

    RF plasma etch reactor with internal inductive coil antenna and electrically conductive chamber walls
    4.
    发明授权
    RF plasma etch reactor with internal inductive coil antenna and electrically conductive chamber walls 失效
    RF等离子体蚀刻反应器，具有内部感应线圈天线和导电室壁

    公开(公告)号：US6071372A

    公开(公告)日：2000-06-06

    申请号：US869798

    申请日：1997-06-05

    申请人： Yan Ye ,  Donald Olgado ,  Avi Tepman ,  Diana Ma ,  Gerald Yin ,  Peter Loewenhardt ,  Jeng H. Hwang ,  Steve Mak

    发明人： Yan Ye ,  Donald Olgado ,  Avi Tepman ,  Diana Ma ,  Gerald Yin ,  Peter Loewenhardt ,  Jeng H. Hwang ,  Steve Mak

    IPC分类号： H05H1/46 ,  H01J37/32 ,  H01L21/302 ,  C23F1/02 ,  C23C16/00

    CPC分类号： H01J37/32477 ,  H01J37/321

    摘要： An RF plasma etch reactor having an etch chamber with electrically conductive walls and a protective layer forming the portion of the walls facing the interior of the chamber. The protective layer prevents sputtering of material from the chamber walls by a plasma formed within the chamber. The etch reactor also has an inductive coil antenna disposed within the etch chamber which is used to generate the plasma by inductive coupling. Like the chamber walls, the inductive coil antenna is constructed to prevent sputtering of the material making up the antenna by the plasma. The coil antenna can take on any configuration (e.g. location, shape, orientation) that is necessary to achieve a desired power deposition pattern within the chamber. Examples of potential coil antenna configurations for achieving the desired power deposition pattern include constructing the coil antenna with a unitary or a segmented structure. The segmented structure involves the use of at least two coil segments wherein each segment is electrically isolated from the other segments and connected to a separate RF power signal. The unitary coil antenna or each of the coil segments can have a planar shape, a cylindrical shape, a truncated conical shape, a dome shape, or any combination thereof. The conductive walls are electrically grounded to serve as an electrical ground (i.e. anode) for a workpiece-supporting pedestal which is connected to a source of RF power to create a bias voltage at the surface of the workpiece.

    摘要翻译： RF等离子体蚀刻反应器具有具有导电壁的蚀刻室和形成面向腔室内部的部分壁的保护层。 保护层防止在室内形成的等离子体从室壁溅射材料。 蚀刻反应器还具有设置在蚀刻室内的感应线圈天线，其用于通过感应耦合产生等离子体。 类似于室壁，感应线圈天线被构造成防止由等离子体溅射构成天线的材料。 线圈天线​​可以承受在室内实现期望的功率沉积图案所必需的任何配置（例如位置，形状，取向）。 用于实现期望的功率沉积模式的电位线圈天线配置的示例包括以整体或分段结构构造线圈天线。 分段结构涉及使用至少两个线圈段，其中每个段与其它段电隔离并连接到单独的RF功率信号。 单线圈天线或每个线圈段可以具有平面形状，圆柱形，截顶圆锥形，圆顶形或其任何组合。 导电壁电接地以用作工件支撑基座的电接地（即阳极），工件支撑基座连接到RF功率源，以在工件的表面产生偏置电压。

    Method for monitoring the quality of a protective coating in a reactor chamber
    6.
    发明授权
    Method for monitoring the quality of a protective coating in a reactor chamber 失效
    监测反应室中保护涂层质量的方法

    公开(公告)号：US06466881B1

    公开(公告)日：2002-10-15

    申请号：US09298073

    申请日：1999-04-22

    申请人： Hong Shih ,  Joe Sommers ,  Diana Ma

    发明人： Hong Shih ,  Joe Sommers ,  Diana Ma

    IPC分类号： C23C1434

    CPC分类号： H01J37/32477 ,  C23C14/564 ,  C23C16/4404

    摘要： A method for determining the quality of a protective coating or layer on a structure inside of a reactor chamber. The method includes generating a basis, such as a standard scatter band of impedance, as an acceptable standard for the quality of a protective layer on the inside of a reactor chamber. At least one substrate is processed within a reactor chamber containing a protective coating for protecting the inside of the reactor chamber during processing of the substrate. The method further includes determining the quality of the protective coating, such as by measuring protective characteristics of the protective coating. A method for on-line monitoring of a quality of a coating on the inside of a reactor chamber.

    摘要翻译： 一种用于确定反应器室内的结构上的保护涂层或层的质量的方法。 该方法包括产生诸如标准散射带阻抗的基准，作为反应室内部的保护层质量的可接受的标准。 在包含保护涂层的反应器室内处理至少一个基板，以在基板的加工期间保护反应室的内部。 该方法还包括确定保护涂层的质量，例如通过测量保护涂层的保护特性。 用于在线监测反应室内部的涂层质量的方法。

    RF plasma method
    7.
    发明授权
    RF plasma method 失效
    射频等离子体法

    公开(公告)号：US06270687B1

    公开(公告)日：2001-08-07

    申请号：US09564042

    申请日：2000-04-27

    申请人： Yan Ye ,  Donald Olgado ,  Avi Tepman ,  Diana Ma ,  Gerald Zheyao Yin ,  Peter Loewenhardt ,  Jeng Hwang ,  Steve S. Y. Mak

    发明人： Yan Ye ,  Donald Olgado ,  Avi Tepman ,  Diana Ma ,  Gerald Zheyao Yin ,  Peter Loewenhardt ,  Jeng Hwang ,  Steve S. Y. Mak

    IPC分类号： B44C122

    CPC分类号： H01J37/32477 ,  H01J37/321

    摘要： An RF plasma etch reactor having an etch chamber with electrically conductive walls and a protective layer forming the portion of the walls facing the interior of the chamber. The protective layer prevents sputtering of material from the chamber walls by a plasma formed within the chamber. The etch reactor also has an inductive coil antenna disposed within the etch chamber which is used to generate the plasma by inductive coupling. Like the chamber walls, the inductive coil antenna is constructed to prevent sputtering of the material making up the antenna by the plasma. The coil antenna can take on any configuration (e.g. location, shape, orientation) that is necessary to achieve a desired power deposition pattern within the chamber. Examples of potential coil antenna configurations for achieving the desired power deposition pattern include constructing the coil antenna with a unitary or a segmented structure. The segmented structure involves the use of at least two coil segments wherein each segment is electrically isolated from the other segments and connected to a separate RF power signal. The unitary coil antenna or each of the coil segments can have a planar shape, a cylindrical shape, a truncated conical shape, a dome shape, or any combination thereof. The conductive walls are electrically grounded to serve as an electrical ground (i.e. anode) for a workpiece-supporting pedestal which is connected to a source of RF power to create a bias voltage at the surface of the workpiece.

    摘要翻译： RF等离子体蚀刻反应器具有具有导电壁的蚀刻室和形成面向腔室内部的部分壁的保护层。 保护层防止在室内形成的等离子体从室壁溅射材料。 蚀刻反应器还具有设置在蚀刻室内的感应线圈天线，其用于通过感应耦合产生等离子体。 类似于室壁，感应线圈天线被构造成防止由等离子体溅射构成天线的材料。 线圈天线​​可以承受在室内实现期望的功率沉积图案所必需的任何配置（例如位置，形状，取向）。 用于实现期望的功率沉积模式的电位线圈天线配置的示例包括以整体或分段结构构造线圈天线。 分段结构涉及使用至少两个线圈段，其中每个段与其它段电隔离并连接到单独的RF功率信号。 单线圈天线或每个线圈段可以具有平面形状，圆柱形，截顶圆锥形，圆顶形或其任何组合。 导电壁电接地以用作工件支撑基座的电接地（即阳极），工件支撑基座连接到RF功率源，以在工件的表面产生偏置电压。

    Plasma chamber having multiple RF source frequencies
    8.
    发明申请
    Plasma chamber having multiple RF source frequencies 审中-公开
    等离子室具有多个RF源频率

    公开(公告)号：US20050106873A1

    公开(公告)日：2005-05-19

    申请号：US10890034

    申请日：2004-07-12

    申请人： Daniel Hoffman ,  Diana Ma ,  Yan Ye ,  Jang Yang

    发明人： Daniel Hoffman ,  Diana Ma ,  Yan Ye ,  Jang Yang

    IPC分类号： H01L21/205 ,  H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/461 ,  H05H1/00

    CPC分类号： H01J37/32165 ,  H01J37/32091

    摘要： A method and apparatus for processing a semiconductor substrate is disclosed. A plasma reactor has a capacitive electrode driven by a plurality of RF power sources, and the electrode capacitance is matched at the desired plasma density and RF source frequency to the negative capacitance of the plasma, to provide an electrode plasma resonance supportive of a broad process window within which the plasma may be sustained.

    摘要翻译： 公开了一种用于处理半导体衬底的方法和设备。 等离子体反应器具有由多个RF电源驱动的电容电极，并且电极电容以期望的等离子体密度和RF源频率匹配到等离子体的负电容，以提供支持广泛过程的电极等离子体共振 可以维持等离子体的窗口。

    System and method for etching organic anti-reflective coating from a substrate
    10.
    发明授权
    System and method for etching organic anti-reflective coating from a substrate 失效
    用于从衬底蚀刻有机抗反射涂层的系统和方法

    公开(公告)号：US06296780B1

    公开(公告)日：2001-10-02

    申请号：US08986427

    申请日：1997-12-08

    申请人： Chun Yan ,  Yan Ye ,  Diana Ma

    发明人： Chun Yan ,  Yan Ye ,  Diana Ma

    IPC分类号： H01L213213

    CPC分类号： H01L21/31116

    摘要： The present invention is embodied in a method and apparatus for etching an organic anti-reflective coating (OARC) layer and a titanium nitride anti-reflective coating (TiN ARC) layer deposited on a substrate located within a processing chamber, without the need for removing the substrate being processed from the processing chamber in which it is situated and without the need for intervening processing steps, such as chamber cleaning operations. The substrate has a base, an underlying oxide layer above the base, an overlying layer above the underlying layer, a middle conductive layer, a TiN ARC layer, and a top OARC layer spun on top of the TiN ARC.

    摘要翻译： 本发明体现在一种用于蚀刻有机抗反射涂层（OARC）层和沉积在位于处理室内的衬底上的氮化钛抗反射涂层（TiN ARC）层的方法和装置中，而不需要去除 基板从其所处理的处理室进行处理，而不需要中间处理步骤，例如室清洁操作。 衬底具有基底，在基底上方的下面的氧化物层，在下层上方的上覆层，中间导电层，TiN ARC层和在TiN ARC顶部旋转的顶部OARC层。