公开(公告)号：US07636608B2

公开(公告)日：2009-12-22

申请号：US11025227

申请日：2004-12-30

Applicant: Merritt Funk ,  Masaki Tozawa

Inventor： Merritt Funk ,  Masaki Tozawa

IPC: G06F19/00 ,  G06F11/00 ,  G01R31/26

CPC classification number: G05B19/4187 ,  G05B2219/31186 ,  G05B2219/32128 ,  G05B2219/35504 ,  G05B2219/36121 ,  G05B2219/45031 ,  Y02P90/20 ,  Y02P90/205 ,  Y02P90/86

Abstract: Graphical User Interfaces (GUIs) are presented for configuring and setting-up dynamic sensors for monitoring tool and process performance in a semiconductor processing system. The semiconductor processing system includes a number of processing tools, a number of processing modules (chambers), and a number of sensors. The graphical display is organized so that all significant parameters are clearly and logically displayed so that the user is able to perform the desired configuration and setup tasks with as little input as possible. The GUI is web-based and is viewable by a user using a web browser.

Abstract translation: 提供图形用户界面（GUI），用于配置和设置动态传感器，用于在半导体处理系统中监控工具和过程性能。 半导体处理系统包括多个处理工具，多个处理模块（室）和多个传感器。 图形显示被组织，使得所有重要参数都被清楚和逻辑地显示，使得用户能够尽可能少地输入所需的配置和设置任务。 GUI是基于Web的，并且可以由使用web浏览器的用户查看。

公开(公告)号：US07113838B2

公开(公告)日：2006-09-26

申请号：US10987194

申请日：2004-11-15

Applicant: Merritt Funk ,  Masaki Tozawa

Inventor： Merritt Funk ,  Masaki Tozawa

IPC: G06F11/00 ,  G06F19/00

CPC classification number: H01L21/67276 ,  G05B19/4065 ,  G05B2219/37234 ,  G05B2219/45031 ,  H01L21/67253

Abstract: A method and system for monitoring tool performance for processing tools in a semiconductor processing system. The semiconductor processing system includes a number of processing tools, a number of processing modules, a number of sensors, and an alarm management system. A tool health control strategy is executed in which tool health data for the processing tool is collected. A tool health analysis strategy is executed in which the tool health data is analyzed. An intervention manager can pause the processing tool when an alarm has occurred. The intervention manager refrains from pausing the processing tool when an alarm has not occurred.

Abstract translation: 一种用于监测半导体处理系统中的加工工具的工具性能的方法和系统。 半导体处理系统包括多个处理工具，多个处理模块，多个传感器和报警管理系统。 执行工具健康控制策略，其中收集用于处理工具的工具健康数据。 执行工具健康分析策略，在其中分析工具健康数据。 发生报警时，干预管理器可以暂停处理工具。 当没有发生警报时，干预管理员不要暂停处理工具。

公开(公告)号：US20050171627A1

公开(公告)日：2005-08-04

申请号：US10987194

申请日：2004-11-15

Applicant: Merritt Funk ,  Masaki Tozawa

Inventor： Merritt Funk ,  Masaki Tozawa

IPC: H01L21/02 ,  G05B19/4065 ,  G06F19/00 ,  H01L21/00

CPC classification number: H01L21/67276 ,  G05B19/4065 ,  G05B2219/37234 ,  G05B2219/45031 ,  H01L21/67253

Abstract: A method and system for monitoring tool performance for processing tools in a semiconductor processing system. The semiconductor processing system includes a number of processing tools, a number of processing modules, a number of sensors, and an alarm management system. A tool health control strategy is executed in which tool health data for the processing tool is collected. A tool health analysis strategy is executed in which the tool health data is analyzed. An intervention manager can pause the processing tool when an alarm has occurred. The intervention manager refrains from pausing the processing tool when an alarm has not occurred.

Abstract translation: 一种用于监测半导体处理系统中的加工工具的工具性能的方法和系统。 半导体处理系统包括多个处理工具，多个处理模块，多个传感器和报警管理系统。 执行工具健康控制策略，其中收集用于处理工具的工具健康数据。 执行工具健康分析策略，在其中分析工具健康数据。 发生报警时，干预管理器可以暂停处理工具。 当没有发生警报时，干预管理员不要暂停处理工具。

公开(公告)号：US06443165B1

公开(公告)日：2002-09-03

申请号：US09101554

申请日：1998-09-21

Applicant: Takashi Akahori ,  Masaki Tozawa ,  Yoko Naito ,  Risa Nakase ,  Shuichi Ishizuka ,  Masahide Saito ,  Tadashi Hirata

Inventor： Takashi Akahori ,  Masaki Tozawa ,  Yoko Naito ,  Risa Nakase ,  Shuichi Ishizuka ,  Masahide Saito ,  Tadashi Hirata

IPC: B08B600

CPC classification number: C23C16/4405

Abstract: A method for use in a plasma treatment system that shortens the time required for the cleaning of a fluorine containing carbon film adheared in a vacuum vessel and protects the surface of a transfer table when the cleaning is carried out. After a CF film is deposited by, e.g., a plasma treatment system, the cleaning of the CF film adhered in a vacuum vessel 2 is carried out. In the cleaning, a plasma of O2 gas is produced, and the C—C and C—F bonds on the surface of the CF film are physically and chemically cut by the active species of O produced by the plasma. The O2 gas penetrates into the CF film at places where the C—C and C—F bonds have been cut, to react with C of the CF film to form CO2 which scatters. On the other hand, F scatters as F2. Thus, the CF film is removed.

Abstract translation: 一种用于等离子体处理系统的方法，其缩短了在真空容器中固化的含氟碳膜的清洁所需的时间，并且在进行清洁时保护转印台的表面。 在通过例如等离子体处理系统沉积CF膜之后，执行粘附在真空容器2中的CF膜的清洁。 在清洁中，产生了O 2气体的等离子体，并且CF膜表面上的C-C和C-F键被由等离子体产生的O的活性物质和化学切割。 在切割C-C和C-F键的地方，O 2气体渗透到CF膜中，与CF膜的C反应形成散射的CO 2。 另一方面，F分散为F2。 因此，去除CF膜。

公开(公告)号：US06355902B2

公开(公告)日：2002-03-12

申请号：US09750683

申请日：2001-01-02

Applicant: Takashi Akahori ,  Masaki Tozawa ,  Yoko Naito ,  Risa Nakase ,  Osamu Yokoyama ,  Shuichi Ishizuka ,  Shunichi Endo ,  Masahide Saito ,  Takeshi Aoki ,  Tadashi Hirata

Inventor： Takashi Akahori ,  Masaki Tozawa ,  Yoko Naito ,  Risa Nakase ,  Osamu Yokoyama ,  Shuichi Ishizuka ,  Shunichi Endo ,  Masahide Saito ,  Takeshi Aoki ,  Tadashi Hirata

IPC: B23K1000

CPC classification number: H01L21/0212 ,  C23C16/26 ,  H01L21/02274 ,  H01L21/312 ,  H01L21/3127 ,  H01L21/76801 ,  H01L21/7682 ,  H01L21/76837

Abstract: Microwave is introduced into a plasma chamber of a plasma processing apparatus and magnetic field is applied thereto to allow plasma generation gas to be placed in plasma state by the electron cyclotron resonance. This plasma is introduced into a film forming chamber of the plasma processing apparatus to allow film forming gas including compound gas of carbon and fluorine or compound gas of carbon, fluorine and hydrogen, and hydro carbon gas to be placed in plasma state. In addition, an insulating film consisting of fluorine added carbon film is formed by the film forming gas placed in plasma state.

Abstract translation: 将微波引入到等离子体处理装置的等离子体室中，并施加磁场以使等离子体产生气体通过电子回旋共振被置于等离子体状态。 该等离子体被引入到等离子体处理装置的成膜室中，以允许包括碳和氟的复合气体或碳，氟和氢的复合气体以及碳氢气体的成膜气体处于等离子体状态。 此外，通过以等离子体状态放置的成膜气体形成由氟添加碳膜构成的绝缘膜。

公开(公告)号：US06215087B1

公开(公告)日：2001-04-10

申请号：US09101516

申请日：1998-07-10

Applicant: Takashi Akahori ,  Masaki Tozawa ,  Yoko Naito ,  Risa Nakase ,  Osamu Yokoyama ,  Shuichi Ishizuka ,  Shunichi Endo ,  Masahide Saito ,  Takeshi Aoki ,  Tadashi Hirata

Inventor： Takashi Akahori ,  Masaki Tozawa ,  Yoko Naito ,  Risa Nakase ,  Osamu Yokoyama ,  Shuichi Ishizuka ,  Shunichi Endo ,  Masahide Saito ,  Takeshi Aoki ,  Tadashi Hirata

IPC: B23K1000

CPC classification number: H01L21/0212 ,  C23C16/26 ,  H01L21/02274 ,  H01L21/312 ,  H01L21/3127 ,  H01L21/76801 ,  H01L21/7682 ,  H01L21/76837

Abstract: Microwave is introduced into a plasma chamber of a plasma processing apparatus and magnetic field is applied thereto to allow plasma generation gas to be placed in plasma state by the electron cyclotron resonance. This plasma is introduced into a film forming chamber of the plasma processing apparatus to allow film forming gas including compound gas of carbon and fluorine or compound gas of carbon, fluorine and hydrogen, and hydro carbon gas to be placed in plasma state. In addition, an insulating film consisting of fluorine added carbon film is formed by the film forming gas placed in plasma state.

Abstract translation: 将微波引入到等离子体处理装置的等离子体室中，并施加磁场以使等离子体产生气体通过电子回旋共振被置于等离子体状态。 该等离子体被引入到等离子体处理装置的成膜室中，以允许包括碳和氟的复合气体或碳，氟和氢的复合气体以及碳氢气体的成膜气体处于等离子体状态。 此外，通过以等离子体状态放置的成膜气体形成由氟添加碳膜构成的绝缘膜。