公开(公告)号：US09229183B2

公开(公告)日：2016-01-05

申请号：US14012384

申请日：2013-08-28

申请人： Mi-Ran Park ,  Jong Sool Jeong ,  Hyun Soo Kim ,  Byungseok Choi ,  Young Tak Han ,  O-Kyun Kwon

发明人： Mi-Ran Park ,  Jong Sool Jeong ,  Hyun Soo Kim ,  Byungseok Choi ,  Young Tak Han ,  O-Kyun Kwon

IPC分类号： H04B10/60 ,  G02B6/42

CPC分类号： G02B6/4274 ,  G02B6/4249 ,  G02B6/4263 ,  G02B6/4279

摘要： Disclosed is a multi-channel receiver optical sub assembly. The a multi-channel receiver optical sub assembly includes: a multi-channel PD array, in which a plurality of photodiodes (PDs) disposed on a first capacitor, and including receiving areas disposed at centers thereof and anode electrode pads arranged in an opposite direction at an angle of 180 degrees based on the receiving areas between the adjacent PDs is monolithically integrated; a plurality of transimpedance amplifiers (TIAs) arranged on a plurality of second capacitors, respectively, and connected with the anode pads of the respective PDs through wire bonding; a submount on which the first capacitor.

摘要翻译： 公开了一种多通道接收机光学子组件。 多通道接收机光学子组件包括：多通道PD阵列，其中设置在第一电容器上的多个光电二极管（PD），并且包括设置在其中心处的接收区域和布置在相反方向的阳极电极焊盘 基于相邻PD之间的接收区域以180度的角度被整体地集成; 分别布置在多个第二电容器上并通过引线接合与相应PD的阳极焊盘连接的多个跨阻抗放大器（TIA）; 第一电容器的基座。

公开(公告)号：US20130163916A1

公开(公告)日：2013-06-27

申请号：US13487807

申请日：2012-06-04

申请人： Hyun Soo KIM ,  Jong Sool Jeong ,  Mi-Ran Park ,  Byungseok Choi ,  O-Kyun Kwon

发明人： Hyun Soo KIM ,  Jong Sool Jeong ,  Mi-Ran Park ,  Byungseok Choi ,  O-Kyun Kwon

IPC分类号： G02B6/12 ,  H01L21/02

CPC分类号： G02B6/43 ,  G02B6/12004 ,  G02B6/1228 ,  G02B6/4224 ,  G02B6/4232

摘要： Disclosed are an optical waveguide platform with integrated active transmission device and monitoring photodiode. The optical waveguide platform with hybrid integrated optical transmission device and optical active device includes an optical waveguide region formed by stacking a lower cladding layer, a core layer and an upper cladding layer on a substrate; a trench region formed by etching a portion of the optical waveguide region; and a spot expanding region formed on the core layer in the optical waveguide region, in which the optical transmission device is mounted in the trench region and the optical active device is flip-chip bonded to the spot expanding region. The monitoring photodiode is flip-chip bonded to the spot expanding region of the core layer of the optical waveguide, thereby monitoring output light including an optical coupling loss that occurs during flip-chip bonding.

摘要翻译： 公开了一种具有集成主动传输装置和监测光电二极管的光波导平台。 具有混合集成光传输装置和光学有源装置的光波导平台包括通过在基板上层叠下包层，芯层和上包层而形成的光波导区域; 通过蚀刻光波导区域的一部分形成的沟槽区域; 以及形成在光波导区域的芯层上的点扩展区域，其中光传输装置安装在沟槽区域中，并且光学有源器件被倒装芯片接合到点扩展区域。 监视光电二极管被倒装芯片接合到光波导的芯层的点扩展区域，从而监视包括在倒装芯片接合期间发生的光耦合损耗的输出光。

公开(公告)号：US09042686B2

公开(公告)日：2015-05-26

申请号：US13487807

申请日：2012-06-04

申请人： Hyun Soo Kim ,  Jong Sool Jeong ,  Mi-Ran Park ,  Byungseok Choi ,  O-Kyun Kwon

发明人： Hyun Soo Kim ,  Jong Sool Jeong ,  Mi-Ran Park ,  Byungseok Choi ,  O-Kyun Kwon

IPC分类号： G02B6/12 ,  G02B6/26 ,  G02B6/42 ,  G02B6/10 ,  G02B6/43 ,  G02B6/122

CPC分类号： G02B6/43 ,  G02B6/12004 ,  G02B6/1228 ,  G02B6/4224 ,  G02B6/4232

摘要： Disclosed are an optical waveguide platform with integrated active transmission device and monitoring photodiode. The optical waveguide platform with hybrid integrated optical transmission device and optical active device includes an optical waveguide region formed by stacking a lower cladding layer, a core layer and an upper cladding layer on a substrate; a trench region formed by etching a portion of the optical waveguide region; and a spot expanding region formed on the core layer in the optical waveguide region, in which the optical transmission device is mounted in the trench region and the optical active device is flip-chip bonded to the spot expanding region. The monitoring photodiode is flip-chip bonded to the spot expanding region of the core layer of the optical waveguide, thereby monitoring output light including an optical coupling loss that occurs during flip-chip bonding.

摘要翻译： 公开了一种具有集成主动传输装置和监测光电二极管的光波导平台。 具有混合集成光传输装置和光学有源装置的光波导平台包括通过在基板上层叠下包层，芯层和上包层而形成的光波导区域; 通过蚀刻光波导区域的一部分形成的沟槽区域; 以及形成在光波导区域的芯层上的点扩展区域，其中光传输装置安装在沟槽区域中，并且光学有源器件被倒装芯片接合到点扩展区域。 监视光电二极管被倒装芯片接合到光波导的芯层的点扩展区域，从而监视包括在倒装芯片接合期间发生的光耦合损耗的输出光。

公开(公告)号：US08804232B2

公开(公告)日：2014-08-12

申请号：US13307067

申请日：2011-11-30

申请人： Dong Churl Kim ,  Kisoo Kim ,  Hyun Soo Kim ,  Byung-seok Choi ,  O-Kyun Kwon ,  Jong Sool Jeong ,  Dae Kon Oh

发明人： Dong Churl Kim ,  Kisoo Kim ,  Hyun Soo Kim ,  Byung-seok Choi ,  O-Kyun Kwon ,  Jong Sool Jeong ,  Dae Kon Oh

IPC分类号： H01S5/10

CPC分类号： H01S5/1028 ,  H01S5/0265 ,  H01S5/0425 ,  H01S5/1003 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/2222 ,  H01S2301/16

摘要： A semiconductor optical device includes a first mode converting core, a light amplification core, a second mode converting core, and a light modulation core disposed in a first mode converting region, a light amplification region, a second mode converting region, and a light modulating region of a semiconductor substrate, respectively, and a current blocking section covering at least sidewalls and a top surface of the light amplification core. The first mode converting core, the light amplification core, the second mode converting core, and the light modulation core are arranged along one direction in the order named, and are connected to each other in butt joints. The current blocking section includes first, second, and third cladding patterns sequentially stacked. The second cladding pattern is doped with dopants of a first conductivity type, and the first and third cladding patterns are doped with dopants of a second conductivity type.

摘要翻译： 半导体光学器件包括第一模式转换核心，光放大核心，第二模式转换核心和设置在第一模式转换区域中的光调制核心，光放大区域，第二模式转换区域和光调制 区域，以及至少覆盖光放大芯的侧壁和顶表面的电流阻挡部分。 第一模式转换核心，光放大核心，第二模式转换核心和光调制核心按照命名的顺序沿一个方向布置，并且在对接中彼此连接。 电流阻挡部分包括顺序层叠的第一，第二和第三包层图案。 第二包层图案掺杂有第一导电类型的掺杂剂，并且第一和第三包层图案掺杂有第二导电类型的掺杂剂。

公开(公告)号：US20120106578A1

公开(公告)日：2012-05-03

申请号：US13241529

申请日：2011-09-23

申请人： Hyun Soo KIM ,  Jong Sool Jeong ,  Ki-Hong Yoon ,  Kisoo Kim ,  O-Kyun Kwon

发明人： Hyun Soo KIM ,  Jong Sool Jeong ,  Ki-Hong Yoon ,  Kisoo Kim ,  O-Kyun Kwon

IPC分类号： H01S3/10

CPC分类号： H01S5/141 ,  H01S5/0265 ,  H01S5/06256 ,  H01S5/1032 ,  H01S5/22

摘要： A wavelength-tunable external cavity laser generating device is provided. The wavelength-tunable external cavity laser generating device includes a reflection-type multi-mode interferometer, an optical amplifier disposed between the reflection-type multi-mode interferometer and an external wavelength-tunable reflector to amplify light, and an optical signal processor configured to process light from the reflection-type multi-mode interferometer. The reflection-type multi-mode interferometer includes a multi-mode waveguide, an input waveguide connecting the optical amplifier and one end of the multi-mode waveguide, and an output waveguide configured to connect the optical signal processor and the other end of the multi-mode waveguide.

摘要翻译： 提供了一种波长可调谐的外腔激光产生装置。 波长可调谐外腔激光发生装置包括反射型多模干涉仪，设置在反射型多模干涉仪和外部波长可调反射体之间以放大光的光放大器;以及光信号处理器， 来自反射型多模干涉仪的处理光。 反射型多模干涉仪包括多模波导，连接光放大器和多模波导的一端的输入波导，以及输出波导，其被配置为连接光信号处理器和多光波导的另一端 模式波导。

公开(公告)号：US20120281274A1

公开(公告)日：2012-11-08

申请号：US13307067

申请日：2011-11-30

申请人： Dong Churl KIM ,  Kisoo Kim ,  Hyun Soo Kim ,  Byung-seok Choi ,  O-Kyun Kwon ,  Jong Sool Jeong ,  Dae Kon Oh

发明人： Dong Churl KIM ,  Kisoo Kim ,  Hyun Soo Kim ,  Byung-seok Choi ,  O-Kyun Kwon ,  Jong Sool Jeong ,  Dae Kon Oh

IPC分类号： H01S5/20 ,  H01L21/04

CPC分类号： H01S5/1028 ,  H01S5/0265 ,  H01S5/0425 ,  H01S5/1003 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/2222 ,  H01S2301/16

摘要： A semiconductor optical device includes a first mode converting core, a light amplification core, a second mode converting core, and a light modulation core disposed in a first mode converting region, a light amplification region, a second mode converting region, and a light modulating region of a semiconductor substrate, respectively, and a current blocking section covering at least sidewalls and a top surface of the light amplification core. The first mode converting core, the light amplification core, the second mode converting core, and the light modulation core are arranged along one direction in the order named, and are connected to each other in butt joints. The current blocking section includes first, second, and third cladding patterns sequentially stacked. The second cladding pattern is doped with dopants of a first conductivity type, and the first and third cladding patterns are doped with dopants of a second conductivity type.

摘要翻译： 半导体光学器件包括第一模式转换核心，光放大核心，第二模式转换核心和设置在第一模式转换区域中的光调制核心，光放大区域，第二模式转换区域和光调制 区域，以及至少覆盖光放大芯的侧壁和顶表面的电流阻挡部分。 第一模式转换核心，光放大核心，第二模式转换核心和光调制核心按照命名的顺序沿一个方向布置，并且在对接中彼此连接。 电流阻挡部分包括顺序层叠的第一，第二和第三包层图案。 第二包层图案掺杂有第一导电类型的掺杂剂，并且第一和第三包层图案掺杂有第二导电类型的掺杂剂。

公开(公告)号：US20120134014A1

公开(公告)日：2012-05-31

申请号：US13281463

申请日：2011-10-26

申请人： Jong Sool Jeong ,  Byung-seok Choi ,  O-Kyun Kwon

发明人： Jong Sool Jeong ,  Byung-seok Choi ,  O-Kyun Kwon

IPC分类号： H01S5/20

CPC分类号： H01S5/141 ,  H01S3/07 ,  H01S3/08027 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/02415 ,  H01S5/4062 ,  H01S2301/16

摘要： Disclosed is a light generating device which comprises a first reflective semiconductor optical amplifier emitting a first light along a first direction, a second reflective semiconductor optical amplifier emitting the second light in a direction opposite to the first direction, an optical distributer reflecting a part of an incident light and to pass the remaining of the incident light, and an optical comb filter passing a wavelength component of a specific period.

摘要翻译： 公开了一种发光装置，其包括沿着第一方向发射第一光的第一反射半导体光学放大器，沿与第一方向相反的方向发射第二光的第二反射半导体光学放大器，反射部分的光分配器 入射光并使剩余的入射光通过，并且通过具有特定周期的波长分量的光梳状滤波器。

公开(公告)号：US20120104531A1

公开(公告)日：2012-05-03

申请号：US13191758

申请日：2011-07-27

申请人： Mi-Ran PARK ,  O-Kyun Kwon

发明人： Mi-Ran PARK ,  O-Kyun Kwon

IPC分类号： H01L31/0216 ,  H01L31/18

CPC分类号： H01L31/107 ,  H01L31/02027 ,  H01L31/02161 ,  H01L31/184 ,  Y02E10/544

摘要： Provided are an avalanche photodiode and a method of fabricating the same. The method of fabricating the avalanche photodiode includes sequentially forming a compound semiconductor absorption layer, a compound semiconductor grading layer, a charge sheet layer, a compound semiconductor amplification layer, a selective wet etch layer, and a p-type conductive layer on an n-type substrate through a metal organic chemical vapor deposition process.

摘要翻译： 提供了一种雪崩光电二极管及其制造方法。 制造雪崩光电二极管的方法包括：在n型衬底上依次形成化合物半导体吸收层，化合物半导体分级层，电荷层，化合物半导体放大层，选择性湿蚀刻层和p型导电层。 通过金属有机化学气相沉积工艺形成衬底。

公开(公告)号：US20090154868A1

公开(公告)日：2009-06-18

申请号：US12117707

申请日：2008-05-08

申请人： Mi-Ran PARK ,  O-Kyun Kwon ,  Jeong-Woo Park ,  Gyung-Ock Kim

发明人： Mi-Ran PARK ,  O-Kyun Kwon ,  Jeong-Woo Park ,  Gyung-Ock Kim

IPC分类号： G02F1/295

CPC分类号： G02F1/01708 ,  B82Y20/00 ,  G02F1/025 ,  G02F2001/0152 ,  G02F2201/302 ,  G02F2201/34 ,  G02F2203/02

摘要： Provided are semiconductor opto-electronic integrated circuits and methods of forming the same. The semiconductor opto-electronic integrated circuit includes: an optical waveguide disposed on a substrate and including an input terminal and an output terminal; an optical grating formed on the optical waveguide; and an optical active device disposed on the optical grating and receiving an optical signal from the optical waveguide through the optical grating to modulate the optical signal.

摘要翻译： 提供半导体光电集成电路及其形成方法。 半导体光电集成电路包括：设置在基板上并包括输入端子和输出端子的光波导; 形成在光波导上的光栅; 以及设置在光栅上的光学有源器件，并通过光栅从光波导接收光信号，以调制光信号。

公开(公告)号：US08710546B2

公开(公告)日：2014-04-29

申请号：US13191758

申请日：2011-07-27

申请人： Mi-Ran Park ,  O-Kyun Kwon

发明人： Mi-Ran Park ,  O-Kyun Kwon

IPC分类号： H01L31/107 ,  H01L31/02

CPC分类号： H01L31/107 ,  H01L31/02027 ,  H01L31/02161 ,  H01L31/184 ,  Y02E10/544

摘要： Provided are an avalanche photodiode and a method of fabricating the same. The method of fabricating the avalanche photodiode includes sequentially forming a compound semiconductor absorption layer, a compound semiconductor grading layer, a charge sheet layer, a compound semiconductor amplification layer, a selective wet etch layer, and a p-type conductive layer on an n-type substrate through a metal organic chemical vapor deposition process.

摘要翻译： 提供了一种雪崩光电二极管及其制造方法。 制造雪崩光电二极管的方法包括：在n型衬底上依次形成化合物半导体吸收层，化合物半导体分级层，电荷层，化合物半导体放大层，选择性湿蚀刻层和p型导电层。 通过金属有机化学气相沉积工艺形成衬底。