HIGH DENSITY MIMCAP WITH A UNIT REPEATABLE STRUCTURE
    1.
    发明申请
    HIGH DENSITY MIMCAP WITH A UNIT REPEATABLE STRUCTURE 审中-公开
    具有单位重复结构的高密度MIMCAP

    公开(公告)号:US20070111430A1

    公开(公告)日:2007-05-17

    申请号:US11619251

    申请日:2007-01-03

    IPC分类号: H01L21/8242 H01L29/94

    摘要: A structure, apparatus and method for utilizing vertically interdigitated electrodes serves to increase the capacitor area surface while maintaining a minimal horizontal foot print. Since capacitance is proportional to the surface area the structure enables continual use of current dielectric materials such as Si3N4 at current thicknesses. In a second embodiment of the interdigitated MIMCAP structure the electrodes are formed in a spiral fashion which serves to increase the physical strength of the MIMCAP. Also included is a spiral shaped capacitor electrode which lends itself to modular design by offering a wide range of discrete capacitive values easily specified by the circuit designer.

    摘要翻译: 用于利用垂直交错电极的结构,装置和方法用于增加电容器面积,同时保持最小的水平脚印。 由于电容与表面积成比例,因此该结构能够连续使用当前厚度的当前介电材料,例如Si 3 N 4。 在叉指MIMCAP结构的第二实施例中,电极以螺旋方式形成,其用于增加MIMCAP的物理强度。 还包括螺旋形电容器电极,其通过提供电路设计者容易指定的宽范围的离散电容值来适应模块化设计。