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    Resist formulation which minimizes blistering during etching
    1.
    发明授权
    Resist formulation which minimizes blistering during etching 失效
    抗蚀剂制剂，其最小化蚀刻期间的起泡

    公开(公告)号：US06207353B1

    公开(公告)日：2001-03-27

    申请号：US08987808

    申请日：1997-12-10

    申请人： Michael D. Armacost ,  Willard E. Conley ,  Tina J. Cotler-Wagner ,  Ronald A. DellaGuardia ,  David M. Dobuzinsky ,  Michael L. Passow ,  William C. Wille

    发明人： Michael D. Armacost ,  Willard E. Conley ,  Tina J. Cotler-Wagner ,  Ronald A. DellaGuardia ,  David M. Dobuzinsky ,  Michael L. Passow ,  William C. Wille

    IPC分类号： G03F700

    CPC分类号： H01L21/0274 ,  G03F7/039 ,  H01L21/31116 ,  H01L21/31144

    摘要： A resist formulation minimizes blistering during reactive ion etching processes resulting in an increased amount of polymer by-product deposition. Such processes involve exciting a gaseous fluorocarbon etchant with sufficient energy to form a high-density plasma, and the use of an etchant having a carbon-to-fluorine ratio of at least 0.33. In addition to a conventional photoactive component, resists which minimize blistering under these conditions include a resin binder which is a terpolymer having: (a) units that contain acid-labile groups; (b) units that are free of reactive groups and hydroxyl groups; and (c) units that contribute to aqueous developability of the photoresist. After the photoresist is patterned on the silicon oxide layer and the high-density plasma is formed, the high-density plasma is introduced to the silicon oxide layer to etch at least one opening in the silicon oxide layer. Preferably, the terpolymer is made up of about 70% 4-hydroxystyrene, about 20% styrene, and about 10% t-butylacrylate.

    摘要翻译： 抗蚀剂制剂使反应离子蚀刻过程中的起泡最小化，导致聚合物副产物沉积量增加。 这种方法包括以足够的能量激发气态碳氟化合物蚀刻剂以形成高密度等离子体，以及使用碳 - 氟比至少为0.33的蚀刻剂。 除了常规的光活性组分之外，在这些条件下使泡沫最小化的抗蚀剂包括具有以下三元共聚物的树脂粘合剂：（a）含有酸不稳定基团的单元; （b）不含反应性基团和羟基的单元; 和（c）有助于光致抗蚀剂的水性显影性的单元。 在氧化硅层上形成光致抗蚀剂并形成高密度等离子体之后，将高密度等离子体引入到氧化硅层中以蚀刻氧化硅层中的至少一个开口。 优选地，三元共聚物由约70％的4-羟基苯乙烯，约20％的苯乙烯和约10％的丙烯酸叔丁酯组成。

    Reactive ion etch loading measurement technique
    3.
    发明授权
    Reactive ion etch loading measurement technique 失效
    反应离子蚀刻加载测量技术

    公开(公告)号：US06268226B1

    公开(公告)日：2001-07-31

    申请号：US09345647

    申请日：1999-06-30

    申请人： David Angell ,  Stuart M. Burns ,  Waldemar W. Kocon ,  Michael L. Passow

    发明人： David Angell ,  Stuart M. Burns ,  Waldemar W. Kocon ,  Michael L. Passow

    IPC分类号： H01L2100

    CPC分类号： H01L21/3065 ,  H01L22/12 ,  H01L22/20

    摘要： A process for estimating a critical dimension of a trench formed by etching a substrate. First, a regression model is constructed for estimating the critical dimension, in which principal component loadings and principal component scores are also calculated. Next, a substrate is etched and spectral data of the etching are collected. A new principal component score is then calculated using the spectral data and the principal component loadings. Finally, the critical dimension of the trench is estimated by applying the new principal component score to the regression model.

    摘要翻译： 用于估计通过蚀刻衬底形成的沟槽的临界尺寸的方法。 首先，构建了一个回归模型，用于估计临界尺寸，其中还计算主成分负荷和主成分分数。 接下来，蚀刻基板并收集蚀刻的光谱数据。 然后使用光谱数据和主要分量负载来计算新的主分量分数。 最后，通过将新的主成分分数应用于回归模型来估计沟槽的关键尺度。

    Method and apparatus for optical emission end point detection in plasma etching processes
    4.
    发明授权
    Method and apparatus for optical emission end point detection in plasma etching processes 失效
    等离子体蚀刻工艺中的光发射端点检测方法和装置

    公开(公告)号：US5308414A

    公开(公告)日：1994-05-03

    申请号：US995727

    申请日：1992-12-23

    申请人： James A. O'Neill ,  Michael L. Passow ,  Jyothi Singh

    发明人： James A. O'Neill ,  Michael L. Passow ,  Jyothi Singh

    IPC分类号： G01J3/00 ,  G01J3/443 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/00 ,  H05H1/46 ,  G01N21/00

    CPC分类号： H01J37/32935

    摘要： An apparatus and method for determining the time at which a plasma etching process should be terminated. The process generates at least one etch product species and a continuum plasma emission. The apparatus monitors the optical emission intensity of the plasma in a narrow band centered about a predetermined spectral line and generates a first signal indicative of the spectral intensity of the etch product species. The apparatus further monitors the optical emission intensity of the plasma in a wide band and generates a second signal indicative of the spectral intensity of the continuum plasma emission. The apparatus further monitors the magnitudes of the first and second signals and generates a termination signal when the magnitudes diverge.

    摘要翻译： 一种用于确定等离子体蚀刻工艺应终止的时间的装置和方法。 该方法产生至少一种蚀刻产物物质和连续体等离子体发射。 该装置以围绕预定光谱线为中心的窄带监测等离子体的光发射强度，并产生指示蚀刻产物种类的光谱强度的第一信号。 该装置进一步监测宽带中的等离子体的光发射强度，并产生指示连续体等离子体发射的光谱强度的第二信号。 该装置还监视第一和第二信号的幅度，并且当幅度发散时产生终止信号。

    METHOD AND APPARATUS FOR REAL TIME FAULT DETECTION IN HIGH SPEED SEMICONDUCTOR PROCESSES
    5.
    发明申请
    METHOD AND APPARATUS FOR REAL TIME FAULT DETECTION IN HIGH SPEED SEMICONDUCTOR PROCESSES 审中-公开
    用于高速半导体工艺中的实时故障检测的方法和装置

    公开(公告)号：US20100014748A1

    公开(公告)日：2010-01-21

    申请号：US12176829

    申请日：2008-07-21

    申请人： Mark L. Reath ,  Justin W. Wong ,  Steven Catlett ,  Michael L. Passow ,  Harry R. Kolar

    发明人： Mark L. Reath ,  Justin W. Wong ,  Steven Catlett ,  Michael L. Passow ,  Harry R. Kolar

    IPC分类号： G06K9/00

    CPC分类号： H01L21/67253 ,  H01L21/67242

    摘要： An apparatus for collecting data during processing of a structure, such as a semiconductor wafer, which includes data collection devices or sensors positioned in a processing chamber for processing the wafer. The data collection sensors may operate at speeds of about 10 Hertz (Hz). A controller communicates and receives data from the data collection sensors. A data processing device communicates with the controller for receiving and processing the data, and the data processing device analyzes the data and determines at least one process response.

    摘要翻译： 一种用于在诸如半导体晶片的结构的处理期间收集数据的装置，其包括位于处理室中用于处理晶片的数据收集装置或传感器。 数据采集​​传感器可以以大约10赫兹（Hz）的速度运行。 控制器从数据采集传感器传送和接收数据。 数据处理装置与控制器通信以接收和处理数据，并且数据处理装置分析数据并确定至少一个处理响应。

    Real time alarm classification and method of use
    7.
    发明授权
    Real time alarm classification and method of use 失效
    实时报警分类及使用方法

    公开(公告)号：US07570174B2

    公开(公告)日：2009-08-04

    申请号：US11693162

    申请日：2007-03-29

    申请人： Joseph Byrne ,  Harry D. Clark ,  Gary R. Moore ,  Michael L. Passow ,  Yiheng Xu

    发明人： Joseph Byrne ,  Harry D. Clark ,  Gary R. Moore ,  Michael L. Passow ,  Yiheng Xu

    IPC分类号： G08B17/10

    CPC分类号： G05B23/0281

    摘要： A real time alarm classification system and method of use and, more particularly, to a residual gas analyzer configured to identify specific root causes of an abnormal condition such as, for example, contamination, undesirable process variability and equipment malfunction in wafer processing. The real-time alarm classification system comprises a computer infrastructure operable to: generate top contributors associated with an alarm triggered by sensed abnormal conditions; compare the top contributors to contributors of historic RGA (residual gas analyzer) alarms of known root causes that were generated by a validated model; and provide a probable root cause of the sensed abnormal conditions when a match is found between the top contributors and the contributors associated with the historic RGA alarms of known root causes. A method and computer readable medium is also contemplated to provide the processes.

    摘要翻译： 更具体地说，涉及一种残留气体分析器，该残留气体分析器被配置为识别晶片处理中诸如污染，不期望的过程变化性和设备故障等异常状况的特定根本原因。 所述实时报警分类系统包括：计算机基础设施，其可操作地：产生与由感测到的异常状况触发的报警相关联的最高贡献者; 比较由经验证的模型生成的已知根本原因的历史RGA（残留气体分析仪）报警的贡献者的主要贡献者; 并且当在顶级贡献者和与已知根本原因的历史RGA警报相关联的贡献者之间找到匹配时，提供感测到的异常状况的可能的根本原因。 还考虑了一种方法和计算机可读介质来提供这些过程。

    REAL TIME ALARM CLASSIFICATION AND METHOD OF USE
    8.
    发明申请
    REAL TIME ALARM CLASSIFICATION AND METHOD OF USE 失效
    实时报警分类及使用方法

    公开(公告)号：US20080238699A1

    公开(公告)日：2008-10-02

    申请号：US11693162

    申请日：2007-03-29

    申请人： Joseph Byrne ,  Harry D. Clark ,  Gary R. Moore ,  Michael L. Passow ,  Yiheng XU

    发明人： Joseph Byrne ,  Harry D. Clark ,  Gary R. Moore ,  Michael L. Passow ,  Yiheng XU

    IPC分类号： G08B17/10

    CPC分类号： G05B23/0281

    摘要： A real time alarm classification system and method of use and, more particularly, to a residual gas analyzer configured to identify specific root causes of an abnormal condition such as, for example, contamination, undesirable process variability and equipment malfunction in wafer processing. The real-time alarm classification system comprises a computer infrastructure operable to: generate top contributors associated with an alarm triggered by sensed abnormal conditions; compare the top contributors to contributors of historic RGA (residual gas analyzer) alarms of known root causes that were generated by a validated model; and provide a probable root cause of the sensed abnormal conditions when a match is found between the top contributors and the contributors associated with the historic RGA alarms of known root causes. A method and computer readable medium is also contemplated to provide the processes.

    摘要翻译： 更具体地说，涉及一种残留气体分析器，该残留气体分析器被配置为识别晶片处理中诸如污染，不期望的过程变化和设备故障等异常状况的特定根本原因。 所述实时报警分类系统包括：计算机基础设施，其可操作地：产生与由感测到的异常状况触发的报警相关联的最高贡献者; 比较由经验证的模型生成的已知根本原因的历史RGA（残留气体分析仪）报警的贡献者的主要贡献者; 并且当在顶级贡献者和与已知根本原因的历史RGA警报相关联的贡献者之间找到匹配时，提供感测到的异常状况的可能的根本原因。 还考虑了一种方法和计算机可读介质来提供这些过程。

    Regeneration of chemical mechanical polishing pads in-situ
    9.
    发明授权
    Regeneration of chemical mechanical polishing pads in-situ 失效
    化学机械抛光垫原位再生

    公开(公告)号：US06296717B1

    公开(公告)日：2001-10-02

    申请号：US09330657

    申请日：1999-06-11

    申请人： Adam D. Ticknor ,  Karl E. Boggs ,  Kenneth M. Davis ,  William F. Landers ,  Michael L. Passow

    发明人： Adam D. Ticknor ,  Karl E. Boggs ,  Kenneth M. Davis ,  William F. Landers ,  Michael L. Passow

    IPC分类号： C23G136

    CPC分类号： B24B37/042 ,  H01L21/30625

    摘要： An in-situ method for regenerating a chemical-mechanical polishing pad which includes the steps of: forming the polishing pad by dispensing liquid moldable material, such as wax, polymers or water, on a polishing surface and solidifying the liquid material by reducing the temperature, allowing the moldable material to harden; distributing slurry material on the polishing pad; polishing the surface of a semiconductor wafer with a combination of the slurry material and the polishing pad; and regenerating in-situ the polishing pad. This method quickly, easily and repeatably, resurfaces and refreshes the surface on which the a semiconductor wafer is polished. The polishing pad may also include abrasives embedded therein to enhance its polishing capabilities.

    摘要翻译： 一种用于再生化学机械抛光垫的原位方法，其包括以下步骤：通过在抛光表面上分配液体可模制材料（例如蜡，聚合物或水）形成抛光垫，并通过降低温度来固化液体材料 ，使可模塑材料硬化; 在抛光垫上分配浆料; 用浆料和抛光垫的组合抛光半导体晶片的表面; 并原位再生抛光垫。 该方法快速，容易和重复地重现和刷新其上抛光半导体晶片的表面。 抛光垫还可以包括嵌入其中的磨料以增强其抛光能力。