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公开(公告)号:US5702775A
公开(公告)日:1997-12-30
申请号:US578801
申请日:1995-12-26
CPC分类号: H03H9/1064 , H03H3/08 , H01L2224/48091 , H01L2224/48247 , H01L2924/181 , Y10T428/1095 , Y10T428/23 , Y10T428/232 , Y10T428/239 , Y10T428/31511 , Y10T428/3154 , Y10T428/31612 , Y10T428/31623 , Y10T428/31627 , Y10T428/31649 , Y10T428/31663 , Y10T428/31667 , Y10T428/31721 , Y10T428/31786
摘要: A method (38) for packaging a microelectronic device (10) and a device (10) packaged by the method (38). The method (38) includes a step of providing (42) a first material (16) on an active surface of the microelectronic device (10). The first material (16) has a first temperature coefficient of expansion. The method (38) also includes steps of heating (46) the microelectronic device (10) and the first material (16) to a predetermined first temperature and molding (48) a second material (20) about the microelectronic device (10) and the first material (16). The second material (20) has a second temperature coefficient of expansion less than that of the first material (16). A final step of cooling (50) the first material (16), the second material (20) and the microelectronic device (10) provides a packaged microelectronic device (30).
摘要翻译: 一种用于封装由所述方法(38)封装的微电子器件(10)和器件(10)的方法(38)。 方法(38)包括在微电子装置(10)的有源表面上提供(42)第一材料(16)的步骤。 第一材料(16)具有第一温度膨胀系数。 方法(38)还包括以下步骤:将微电子器件(10)和第一材料(16)加热到预定的第一温度并围绕微电子器件(10)模制(48)第二材料(20),以及 第一材料(16)。 第二材料(20)的第二温度膨胀系数小于第一材料(16)的膨胀系数。 冷却(50)第一材料(16),第二材料(20)和微电子器件(10)的最终步骤提供封装的微电子器件(30)。
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公开(公告)号:US5928598A
公开(公告)日:1999-07-27
申请号:US854239
申请日:1997-05-09
IPC分类号: H01L23/28 , H01L21/56 , H01L23/29 , H01L23/31 , H03H3/02 , H03H9/10 , H03H9/25 , B29C45/14 , B29C70/70
CPC分类号: H03H9/1064 , H03H3/08 , H01L2224/48091 , H01L2224/48247 , H01L2924/181 , Y10T428/1095 , Y10T428/23 , Y10T428/232 , Y10T428/239 , Y10T428/31511 , Y10T428/3154 , Y10T428/31612 , Y10T428/31623 , Y10T428/31627 , Y10T428/31649 , Y10T428/31663 , Y10T428/31667 , Y10T428/31721 , Y10T428/31786
摘要: A method (38) for packaging a microelectronic device (10) and a device (10) packaged by the method (38). The method (38) includes a step of providing (42) a first material (16) on an active surface of the microelectronic device (10). The first material (16) has a first temperature coefficient of expansion. The method (38) also includes steps of heating (46) the microelectronic device (10) and the first material (16) to a predetermined first temperature and molding (48) a second material (20) about the microelectronic device (10) and the first material (16). The second material (20) has a second temperature coefficient of expansion less than that of the first material (16). A final step of cooling (50) the first material (16), the second material (20) and the microelectronic device (10) provides a packaged microelectronic device (30).
摘要翻译: 一种用于封装由所述方法(38)封装的微电子器件(10)和器件(10)的方法(38)。 方法(38)包括在微电子器件(10)的有源表面上提供(42)第一材料(16)的步骤。 第一材料(16)具有第一温度膨胀系数。 方法(38)还包括以下步骤:将微电子器件(10)和第一材料(16)加热到预定的第一温度并围绕微电子器件(10)模制(48)第二材料(20),以及 第一材料(16)。 第二材料(20)的第二温度膨胀系数小于第一材料(16)的膨胀系数。 冷却(50)第一材料(16),第二材料(20)和微电子器件(10)的最终步骤提供封装的微电子器件(30)。
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