利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

290 条记录 (耗时 0.043 秒)

    Gate dielectric breakdown protection during ESD events
    1.
    发明授权
    Gate dielectric breakdown protection during ESD events 有权
    ESD事件期间的栅极绝缘击穿保护

    公开(公告)号：US08634174B2

    公开(公告)日：2014-01-21

    申请号：US13115492

    申请日：2011-05-25

    申请人： Michel J. Abou-Khalil ,  James P. Di Sarro ,  Robert J. Gauthier, Jr. ,  Junjun Li ,  Souvick Mitra ,  Yang Yang

    发明人： Michel J. Abou-Khalil ,  James P. Di Sarro ,  Robert J. Gauthier, Jr. ,  Junjun Li ,  Souvick Mitra ,  Yang Yang

    IPC分类号： H02H9/00 ,  H02H3/22

    CPC分类号： H02H9/046 ,  G06F17/5063 ,  H01L27/0285

    摘要： Protection circuits, design structures, and methods for isolating the gate and gate dielectric of a field-effect transistor from electrostatic discharge (ESD). A protection field-effect transistor is located between a protected field-effect transistor and a voltage rail. Under normal operating conditions, the protection field-effect transistor is saturated so that the protected field-effect transistor is coupled to the voltage rail. The protection field-effect transistor may be driven into a cutoff condition in response to an ESD event while the chip is unpowered, which increases the series resistance of an ESD current path between the gate of the protected field-effect transistor and the voltage rail. The voltage drop across the protection field-effect transistor may reduce the ESD stress on the gate dielectric of the protected field-effect transistor. Alternatively, the gate and source of an existing field-effect transistor are selectively coupled provide ESD isolation to the protected field-effect transistor.

    摘要翻译： 用于将场效应晶体管的栅极和栅极电介质与静电放电（ESD）隔离的保护电路，设计结构和方法。 保护场效应晶体管位于受保护的场效应晶体管和电压轨之间。 在正常工作条件下，保护场效应晶体管饱和，使受保护的场效应晶体管耦合到电压轨。 保护场效应晶体管可以在芯片无电源时响应于ESD事件而被驱动成截止状态，这增加了受保护的场效应晶体管的栅极与电压轨之间的ESD电流路径的串联电阻。 保护场效应晶体管两端的电压降可以降低受保护的场效应晶体管的栅极电介质上的ESD应力。 或者，现有的场效应晶体管的栅极和源极被选择性地耦合到提供ESD隔离到受保护的场效应晶体管。

    GATE DIELECTRIC BREAKDOWN PROTECTION DURING ESD EVENTS
    2.
    发明申请
    GATE DIELECTRIC BREAKDOWN PROTECTION DURING ESD EVENTS 有权
    防静电事件期间门电绝缘保护

    公开(公告)号：US20120300349A1

    公开(公告)日：2012-11-29

    申请号：US13115492

    申请日：2011-05-25

    申请人： Michel J. Abou-Khalil ,  James P. Di Sarro ,  Robert J. Gauthier, JR. ,  Junjun Li ,  Souvick Mitra ,  Yang Yang

    发明人： Michel J. Abou-Khalil ,  James P. Di Sarro ,  Robert J. Gauthier, JR. ,  Junjun Li ,  Souvick Mitra ,  Yang Yang

    IPC分类号： H02H9/00 ,  G06F17/50

    CPC分类号： H02H9/046 ,  G06F17/5063 ,  H01L27/0285

    摘要： Protection circuits, design structures, and methods for isolating the gate and gate dielectric of a field-effect transistor from electrostatic discharge (ESD). A protection field-effect transistor is located between a protected field-effect transistor and a voltage rail. Under normal operating conditions, the protection field-effect transistor is saturated so that the protected field-effect transistor is coupled to the voltage rail. The protection field-effect transistor may be driven into a cutoff condition in response to an ESD event while the chip is unpowered, which increases the series resistance of an ESD current path between the gate of the protected field-effect transistor and the voltage rail. The voltage drop across the protection field-effect transistor may reduce the ESD stress on the gate dielectric of the protected field-effect transistor. Alternatively, the gate and source of an existing field-effect transistor are selectively coupled provide ESD isolation to the protected field-effect transistor.

    摘要翻译： 用于将场效应晶体管的栅极和栅极电介质与静电放电（ESD）隔离的保护电路，设计结构和方法。 保护场效应晶体管位于受保护的场效应晶体管和电压轨之间。 在正常工作条件下，保护场效应晶体管饱和，使受保护的场效应晶体管耦合到电压轨。 保护场效应晶体管可以在芯片无电源时响应于ESD事件而被驱动成截止状态，这增加了受保护的场效应晶体管的栅极与电压轨之间的ESD电流路径的串联电阻。 保护场效应晶体管两端的电压降可以降低受保护的场效应晶体管的栅极电介质上的ESD应力。 或者，现有的场效应晶体管的栅极和源极被选择性地耦合到提供ESD隔离到受保护的场效应晶体管。

    Physical resource sharing on wireless interface
    5.
    发明授权
    Physical resource sharing on wireless interface 有权

    公开(公告)号：US10779283B2

    公开(公告)日：2020-09-15

    申请号：US15168991

    申请日：2016-05-31

    申请人： Yigang Cai ,  Yang Yang

    发明人： Yigang Cai ,  Yang Yang

    IPC分类号： H04W72/04 ,  H04W4/70 ,  H04L5/00 ,  H04L12/801 ,  H04W28/02 ,  H04W72/12 ,  H04W74/08

    摘要： The present disclosure generally discloses a wireless resource sharing mechanism configured to support sharing of physical wireless resources of a wireless interface of a wireless access device. The wireless resource sharing mechanism is configured to support sharing of physical wireless resources of a wireless interface of a wireless access device in order to support Machine-Type Communications (MTCs). The wireless resource sharing mechanism is configured to support sharing of physical wireless resources, of a wireless interface of a wireless access device, between MTC traffic of MTC devices and non-MTC traffic of non-MTC devices (referred to herein as legacy traffic of legacy devices). The wireless resource sharing mechanism is configured to support sharing of physical wireless resources, of a wireless interface of a wireless access device, within a scheduling time interval of the wireless interface of the wireless access device.

    Ni(OH)2 NANOPOROUS FILMS AS ELECTRODES
    7.
    发明申请
    Ni(OH)2 NANOPOROUS FILMS AS ELECTRODES 审中-公开
    Ni（OH）2纳米膜作为电极

    公开(公告)号：US20160379764A1

    公开(公告)日：2016-12-29

    申请号：US15193529

    申请日：2016-06-27

    申请人： James M. Tour ,  Yang Yang

    发明人： James M. Tour ,  Yang Yang

    IPC分类号： H01G11/30 ,  H01M4/52 ,  H01M4/90 ,  H01G11/86 ,  H01M4/04 ,  C25D9/06 ,  H01G11/68 ,  H01G11/26 ,  H01M4/66 ,  H01M4/88

    CPC分类号： H01G11/30 ,  C25D9/06 ,  C25D11/34 ,  H01B1/02 ,  H01G11/26 ,  H01G11/68 ,  H01G11/86 ,  H01M4/0442 ,  H01M4/0471 ,  H01M4/52 ,  H01M4/661 ,  H01M4/8817 ,  H01M4/8853 ,  H01M4/9016 ,  H01M8/0206 ,  H01M8/0232 ,  H01M2004/021

    摘要： The present disclosure pertains to electrodes that include a nickel-based material and at least one porous region with a plurality of nickel hydroxide moieties on a surface of the nickel-based material. The nickel-based material may be a nickel foil in the form of a film. The porous region of the electrode may be directly associated with the surface of the nickel-based material. The nickel hydroxide moieties may be in crystalline form and embedded with the porous region. The electrodes of the present disclosure may be a component of an energy storage device, such as a capacitor. Additional embodiments of the present disclosure pertain to methods of fabricating the electrodes by anodizing a nickel-based material to form at least one porous region on a surface of the nickel-based material; and hydrothermally treating the porous region to form nickel hydroxide moieties associated with the porous region.

    摘要翻译： 本公开涉及包括镍基材料的电极和在镍基材料的表面上具有多个氢氧化镍部分的至少一个多孔区域。 镍基材料可以是膜形式的镍箔。 电极的多孔区域可以直接与镍基材料的表面相关联。 氢氧化镍部分可以是结晶形式并且嵌入多孔区域。 本公开的电极可以是诸如电容器的能量存储装置的部件。 本公开的另外的实施例涉及通过阳极氧化镍基材料以在镍基材料的表面上形成至少一个多孔区域来制造电极的方法; 并水热处理多孔区以形成与多孔区相关联的氢氧化镍部分。

    Method and apparatus for improved management of service-impacting events
    9.
    发明授权
    Method and apparatus for improved management of service-impacting events 有权
    改善服务影响事件管理的方法和设备

    公开(公告)号：US09198143B2

    公开(公告)日：2015-11-24

    申请号：US13436148

    申请日：2012-03-30

    申请人： Jin Wang ,  Yang Yang

    发明人： Jin Wang ,  Yang Yang

    IPC分类号： H04B7/00 ,  H04B1/00 ,  H04W52/34 ,  H04L12/24 ,  H04W52/02 ,  H04W52/14

    CPC分类号： H04W52/343 ,  H04L41/0654 ,  H04W52/0206 ,  H04W52/143 ,  Y02D70/1242 ,  Y02D70/1262

    摘要： Various methods and devices are provided to address the need for improved management of service-impacting events. In one method, network equipment determines (201) for a network node that a traffic overload situation is present or that a service-impacting event is imminent or has occurred to establish an operating condition. It then reduces (202) transmit power to a lower level when the operating condition has been established. The network equipment then determines (203) for the network node that the operating condition no longer applies because the traffic overload situation is no longer present or an event subsequent to the service-impacting event has occurred. It then restores (204) transmit power when this operating condition no longer applies.

    摘要翻译： 提供了各种方法和设备，以满足改进对服务影响事件的管理的需要。 在一种方法中，网络设备确定（201）网络节点存在交通过载状况或者服务影响事件即将发生或已经发生以建立操作条件。 然后，当操作条件建立时，它将（202）功率减小到较低的水平。 网络设备然后为网络节点确定（203）由于业务过载状况不再存在或服务冲击事件发生之后的事件，运行条件​​不再适用。 然后，当该操作条件不再适用时，它恢复（204）发射功率。

    WIRELESS TERMINAL WITH REDUCED SAR PEAK VALUE AND METHOD FOR REDUCING SAR PEAK VALUE BY USING THE WIRELESS TERMINAL
    10.
    发明申请
    WIRELESS TERMINAL WITH REDUCED SAR PEAK VALUE AND METHOD FOR REDUCING SAR PEAK VALUE BY USING THE WIRELESS TERMINAL 有权
    具有减少SAR峰值的无线终端和通过使用无线终端降低SAR峰值的方法

    公开(公告)号：US20150057053A1

    公开(公告)日：2015-02-26

    申请号：US14350134

    申请日：2012-02-21

    申请人： Lu Zhang ,  Long Li ,  Yang Yang

    发明人： Lu Zhang ,  Long Li ,  Yang Yang

    IPC分类号： H04B1/38 ,  H01Q1/52

    CPC分类号： H04B1/3838 ,  H01Q1/2275 ,  H01Q1/245 ,  H01Q1/52 ,  H01Q9/42 ,  H01Q21/28

    摘要： A wireless terminal with a reduced Specific Absorption Rate (SAR) peak value and a method for reducing an SAR peak value by using the wireless terminal are disclosed. The wireless terminal with a reduced SAR peak value includes a first antenna configured to receive or transmit a communication signal, and further includes: a second antenna configured to feed a coupling signal when the first antenna receives or transmits the communication signal, and a signal processing module configured to process the coupling signal to reduce an SAR peak value of the communication signal for a human body. The energy of a superposed signal in a human body orientation is reduced by superposing the coupling signal with the communication signal, so as to reduce the SAR peak value effectively.

    摘要翻译： 公开了具有降低的比吸收率（SAR）峰值的无线终端和通过使用无线终端来降低SAR峰值的方法。 具有降低的SAR峰值的无线终端包括被配置为接收或发送通信信号的第一天线，并且还包括：第二天线，被配置为当第一天线接收或发送通信信号时馈送耦合信号，以及信号处理 模块被配置为处理耦合信号以减少人体的通信信号的SAR峰值。 通过将耦合信号与通信信号叠加来减少人体取向中叠加信号的能量，从而有效降低SAR峰值。