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1.发明公开公开(公告)号：US20240136473A1
公开(公告)日：2024-04-25
申请号：US18401212
申请日：2023-12-29
CPC分类号： H01L33/405 , H01L33/06 , H01L33/32 , H01L33/502 , H01L33/58 , H01L33/382
摘要： Systems and methods for improved light emitting efficiency of a solid state transducer (SST), for example light emitting diodes (LED), are disclosed. One embodiment of an SST die in accordance with the technology includes a reflective material disposed over electrical connectors on a front side of the die. The reflective material has a higher reflectivity than a base material of the connectors such that light traveling toward the connectors reflects back out of the device.
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2.发明公开公开(公告)号：US20240128425A1
公开(公告)日：2024-04-18
申请号：US18535564
申请日：2023-12-11
发明人： Martin F. Schubert
IPC分类号： H01L33/62 , H01L33/06 , H01L33/10 , H01L33/14 , H01L33/32 , H01L33/36 , H01L33/38 , H01L33/40 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/60
CPC分类号： H01L33/62 , H01L33/06 , H01L33/10 , H01L33/14 , H01L33/32 , H01L33/36 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/387 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/60 , H01L2924/0002 , H01L2933/0016 , H01L2933/0066 , H10K50/814
摘要： Solid state lighting (“SSL”) devices with improved contacts and associated methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes an SSL structure having a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The SSL device also includes a first contact on the first semiconductor material and a second contact on the second semiconductor material, where the first and second contacts define the current flow path through the SSL structure. The first or second contact is configured to provide a current density profile in the SSL structure based on a target current density profile.
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3.发明公开公开(公告)号：US20240047634A1
公开(公告)日：2024-02-08
申请号：US18377903
申请日：2023-10-09
CPC分类号： H01L33/62 , H01L33/0093 , H01L33/007 , H01L33/06 , H01L33/08 , H01L33/32 , H01L33/501 , H01L33/58 , H01L33/504 , H01L33/382
摘要： Vertical solid-state transducers (“SSTs”) having backside contacts are disclosed herein. An SST in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the SST, a second semiconductor material at a second side of the SST opposite the first side, and an active region between the first and second semiconductor materials. The SST can further include first and second contacts electrically coupled to the first and second semiconductor materials, respectively. A portion of the first contact can be covered by a dielectric material, and a portion can remain exposed through the dielectric material. A conductive carrier substrate can be disposed on the dielectric material. An isolating via can extend through the conductive carrier substrate to the dielectric material and surround the exposed portion of the first contact to define first and second terminals electrically accessible from the first side.
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公开(公告)号：US20230352630A1
公开(公告)日：2023-11-02
申请号：US18340644
申请日：2023-06-23
CPC分类号： H01L33/382 , H01L33/0075 , H01L33/06 , H01L33/36 , H01L33/387 , H01L33/405 , H01L33/42 , H01L33/62 , H01L2224/48091 , H01L2224/48137 , H01L2224/49107 , H01L2933/0016
摘要： Various embodiments of light emitting dies and solid state lighting (“SSL”) devices with light emitting dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a light emitting die includes an SSL structure configured to emit light in response to an applied electrical voltage, a first electrode carried by the SSL structure, and a second electrode spaced apart from the first electrode of the SSL structure. The first and second electrode are configured to receive the applied electrical voltage. Both the first and second electrodes are accessible from the same side of the SSL structure via wirebonding.
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公开(公告)号：US20230275113A1
公开(公告)日：2023-08-31
申请号：US18313638
申请日：2023-05-08
CPC分类号： H01L27/15 , H01L33/382 , H01L33/405 , H01L33/0093 , H01L23/60 , H01L33/0075 , H01L2924/0002 , H01L2933/0016
摘要： Solid state transducer devices having integrated electrostatic discharge protection and associated systems and methods are disclosed herein. In one embodiment, a solid state transducer device includes a solid state emitter, and an electrostatic discharge device carried by the solid state emitter. In some embodiments, the electrostatic discharge device and the solid state emitter share a common first contact and a common second contact. In further embodiments, the solid state lighting device and the electrostatic discharge device share a common epitaxial substrate. In still further embodiments, the electrostatic discharge device is positioned between the solid state lighting device and a support substrate.
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公开(公告)号：US11721790B2
公开(公告)日：2023-08-08
申请号：US17150945
申请日：2021-01-15
CPC分类号： H01L33/382 , H01L33/0075 , H01L33/06 , H01L33/36 , H01L33/387 , H01L33/405 , H01L33/42 , H01L33/62 , H01L2224/48091 , H01L2224/48137 , H01L2224/49107 , H01L2933/0016 , H01L2224/48091 , H01L2924/00014
摘要： Various embodiments of light emitting dies and solid state lighting (“SSL”) devices with light emitting dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a light emitting die includes an SSL structure configured to emit light in response to an applied electrical voltage, a first electrode carried by the SSL structure, and a second electrode spaced apart from the first electrode of the SSL structure. The first and second electrode are configured to receive the applied electrical voltage. Both the first and second electrodes are accessible from the same side of the SSL structure via wirebonding.
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公开(公告)号：US11688758B2
公开(公告)日：2023-06-27
申请号：US17539528
申请日：2021-12-01
CPC分类号： H01L27/15 , H01L23/60 , H01L33/0075 , H01L33/0093 , H01L33/382 , H01L33/405 , H01L2924/0002 , H01L2933/0016 , H01L2924/0002 , H01L2924/00
摘要： Solid state transducer devices having integrated electrostatic discharge protection and associated systems and methods are disclosed herein. In one embodiment, a solid state transducer device includes a solid state emitter, and an electrostatic discharge device carried by the solid state emitter. In some embodiments, the electrostatic discharge device and the solid state emitter share a common first contact and a common second contact. In further embodiments, the solid state lighting device and the electrostatic discharge device share a common epitaxial substrate. In still further embodiments, the electrostatic discharge device is positioned between the solid state lighting device and a support substrate.
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公开(公告)号：US20230163266A1
公开(公告)日：2023-05-25
申请号：US18156994
申请日：2023-01-19
IPC分类号： H01L33/62 , H01L21/78 , H01L27/15 , H01L33/38 , H01L27/04 , H01L33/00 , H01L33/06 , H01L33/32 , H01L33/40 , H01L33/64 , H01L25/075
CPC分类号： H01L33/62 , H01L21/78 , H01L27/156 , H01L33/382 , H01L27/04 , H01L33/0025 , H01L33/06 , H01L33/32 , H01L33/405 , H01L33/64 , H01L33/005 , H01L25/0753 , H01L33/647 , H01L33/0095 , H01L2224/73265 , H01L33/642 , H01L2933/0075 , H01L33/644 , H01L2933/0016 , H01L2933/0033 , H01L2933/0066 , H01L33/58
摘要： Solid-state transducers (“SSTs”) and vertical high voltage SSTs having buried contacts are disclosed herein. An SST die in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a plurality of first contacts at the first side and electrically coupled to the first semiconductor material, and a plurality of second contacts extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. An interconnect can be formed between at least one first contact and one second contact. The interconnects can be covered with a plurality of package materials.
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公开(公告)号：US20230109959A1
公开(公告)日：2023-04-13
申请号：US18045331
申请日：2022-10-10
IPC分类号： H01L33/20 , H01L33/08 , H01L21/02 , H01L33/38 , H01L33/00 , H01L33/12 , H01L33/48 , H01L33/62
摘要： Various embodiments of SST dies and solid state lighting (“SSL”) devices with SST dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a SST die includes a substrate material, a first semiconductor material and a second semiconductor material on the substrate material, an active region between the first semiconductor material and the second semiconductor material, and a support structure defined by the substrate material. In some embodiments, the support structure has an opening that is vertically aligned with the active region.
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公开(公告)号：US20220084992A1
公开(公告)日：2022-03-17
申请号：US17532093
申请日：2021-11-22
发明人： Martin F. Schubert
IPC分类号： H01L25/075 , H01L33/62 , H01L33/38
摘要： Solid-state transducer (“SST”) dies and SST arrays having electrical cross-connections are disclosed herein. An array of SST dies in accordance with a particular embodiment can include a first terminal, a second terminal and a plurality of SST dies coupled between the first and second terminals with at least a pair of the SST dies being coupled in parallel. The plurality of SST dies can individually include a plurality of junctions coupled in series with an interconnection between each individual junction. Additionally, the individual SST dies can have a cross-connection contact coupled to the interconnection. In one embodiment, the array can further include a cross-connection between the cross-connection contacts on the pair of the SST dies.
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