公开(公告)号：US20220246736A1

公开(公告)日：2022-08-04

申请号：US17167853

申请日：2021-02-04

Applicant: Micron Technology, Inc.

Inventor： Sandeep Ramasamudra Suresha ,  Terrence B. McDaniel

IPC: H01L29/417 ,  H01L29/45 ,  H01L21/283 ,  H01L29/40 ,  H01L27/108 ,  H01L29/78

Abstract: A microelectronic device comprises a conductive structure, a metal nitride material, and a metal silicide material. The conductive structure comprises a first portion having a first width, and a second portion under the first portion and extending into a semiconductive material. The second portion has a tapered profile defining additional widths varying from the first width at an upper boundary of the second portion to a second width less than the first width at a lower boundary of the second portion. The metal nitride material substantially surrounds outer surfaces of the first portion and the second portion of the conductive structure. The metal silicide material substantially covers outer surfaces of the metal nitride material within vertical boundaries of the second portion of the conductive structure. Related methods, memory devices, and electronic systems are also described.