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公开(公告)号：US20230058288A1
公开(公告)日：2023-02-23
申请号：US17979750
申请日：2022-11-02
Applicant: Micron Technology, Inc.
Inventor： Raju Ahmed , Frank Speetjens , Darin S. Miller , Siva Naga Sandeep Chalamalasetty , Dave Pratt , Yi Hu , Yung-Ta Sung , Aaron K. Belsher , Allen R. Gibson
IPC: H01L21/768 , H01L23/522
Abstract: Some embodiments include a method of forming an integrated assembly. An arrangement is formed to include a conductive pillar extending through an insulative mass. An upper surface of the conductive pillar is recessed to form a cavity. An insulative collar is formed within the cavity to line an outer lateral periphery of the cavity. A recessed surface of the conductive pillar is exposed at a bottom of the lined cavity. A conductive expanse is formed over the insulative mass. A portion of the conductive expanse extends into the cavity and is configured as an interconnect. The conductive expanse is patterned into multiple conductive structures. One of the conductive structures includes the interconnect.
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公开(公告)号：US20210249304A1
公开(公告)日：2021-08-12
申请号：US16787321
申请日：2020-02-11
Applicant: Micron Technology, Inc.
Inventor： Raju Ahmed , Frank Speetjens , Darin S. Miller , Siva Naga Sandeep Chalamalasetty , Dave Pratt , Yi Hu , Yung-Ta Sung , Aaron K. Belsher , Allen R. Gibson
IPC: H01L21/768 , H01L23/522
Abstract: Some embodiments include a method of forming an integrated assembly. An arrangement is formed to include a conductive pillar extending through an insulative mass. An upper surface of the conductive pillar is recessed to form a cavity. An insulative collar is formed within the cavity to line an outer lateral periphery of the cavity. A recessed surface of the conductive pillar is exposed at a bottom of the lined cavity. A conductive expanse is formed over the insulative mass. A portion of the conductive expanse extends into the cavity and is configured as an interconnect. The conductive expanse is patterned into multiple conductive structures. One of the conductive structures includes the interconnect.
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3.发明授权
公开(公告)号：US12022647B2
公开(公告)日：2024-06-25
申请号：US17323516
申请日：2021-05-18
Applicant: Micron Technology, Inc.
Inventor： Stephen D. Snyder , Thomas A. Figura , Siva Naga Sandeep Chalamalasetty , Ping Chieh Chiang , Scott L. Light , Yashvi Singh , Yan Li , Song Guo
CPC classification number: H10B12/482 , G11C5/06 , H01L27/0688 , H10B12/30 , H10B12/488
Abstract: A microelectronic device comprises memory cell structures extending from a base material. At least one memory cell structure of the memory cell structures comprises a central portion in contact with a digit line, extending from the base material and comprising opposing arcuate surfaces, an end portion in contact with a storage node contact on a side of the central portion, and an additional end portion in contact with an additional storage node contact on an opposite side of the central portion. Related microelectronic devices, electronic systems, and methods are also described.
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公开(公告)号：US11545391B2
公开(公告)日：2023-01-03
申请号：US16787321
申请日：2020-02-11
Applicant: Micron Technology, Inc.
Inventor： Raju Ahmed , Frank Speetjens , Darin S. Miller , Siva Naga Sandeep Chalamalasetty , Dave Pratt , Yi Hu , Yung-Ta Sung , Aaron K. Belsher , Allen R. Gibson
IPC: H01L21/768 , H01L23/522
Abstract: Some embodiments include a method of forming an integrated assembly. An arrangement is formed to include a conductive pillar extending through an insulative mass. An upper surface of the conductive pillar is recessed to form a cavity. An insulative collar is formed within the cavity to line an outer lateral periphery of the cavity. A recessed surface of the conductive pillar is exposed at a bottom of the lined cavity. A conductive expanse is formed over the insulative mass. A portion of the conductive expanse extends into the cavity and is configured as an interconnect. The conductive expanse is patterned into multiple conductive structures. One of the conductive structures includes the interconnect.
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5.发明申请
公开(公告)号：US20220375942A1
公开(公告)日：2022-11-24
申请号：US17323516
申请日：2021-05-18
Applicant: Micron Technology, Inc.
Inventor： Stephen D. Snyder , Thomas A. Figura , Siva Naga Sandeep Chalamalasetty , Ping Chieh Chiang , Scott L. Light , Yashvi Singh , Yan Li , Song Guo
IPC: H01L27/108 , H01L27/06 , G11C5/06
Abstract: A microelectronic device comprises memory cell structures extending from a base material. At least one memory cell structure of the memory cell structures comprises a central portion in contact with a digit line, extending from the base material and comprising opposing arcuate surfaces, an end portion in contact with a storage node contact on a side of the central portion, and an additional end portion in contact with an additional storage node contact on an opposite side of the central portion. Related microelectronic devices, electronic systems, and methods are also described.
