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    Recording/reproducing apparatus with double-sided beam type probe
    1.
    发明授权
    Recording/reproducing apparatus with double-sided beam type probe 有权
    具有双面光束式探头的记录/再现装置

    公开(公告)号：US07675836B2

    公开(公告)日：2010-03-09

    申请号：US11170085

    申请日：2005-06-30

    申请人： Mieko Ishii ,  Takeshi Harada ,  Youichi Inoue ,  Kenchi Ito

    发明人： Mieko Ishii ,  Takeshi Harada ,  Youichi Inoue ,  Kenchi Ito

    IPC分类号： G11B7/00

    CPC分类号： B82Y10/00 ,  G11B9/1445 ,  G11B9/149

    摘要： For providing a recording/reproducing apparatus, for recording/reproducing information through conduction of electricity upon contact of a probe, having large recording density and a large transfer speed, but less in deterioration of a probe chips thereof, and being long in the lifetime thereof, within the recording/reproducing apparatus, a multi-chip is formed, disposing probe chips in large numbers thereof at a tip of a cantilever, while the cantilever is of a double-sided beam type, and the multi-chip is disposed at a center of the beam, wherein recording/reproducing portions of the multi-chip are disposed to correspond to recording dots one by one, and the multi-chip forming surface is moved up and down in parallel with the surface of a recording medium, due to suction force, so as to bring it to be in contact with the recording dots, and electricity is conducted after the contact thereof, thereby conducting the recording, in the structure; wherein, since a large amount of data can be read/written at one time, therefore it is possible to improve data transfer speed. Also, with conducting the R/W by means of the multi-chip, comparing to the single chip, it is possible to reduce the traveling distance of the multi-chip, thereby to reduce the abrasion. Also, since the tip portion of the said chip has the curvature radius, being large, such as, equal to 50 nm or greater than that, and since it moves in parallel with the surface of the recording medium, it can be in contact with the surface under the condition of, not the point contact, but near to the plane contact, therefore, the abrasion can be further reduced, effectively.

    摘要翻译： 为了提供一种记录/再现装置，用于通过探针接触时的电传导来记录/再现信息，具有大的记录密度和大的传送速度，但是在其探针芯片的劣化中较少，并且在其寿命期间较长 在记录/再现装置中，形成多芯片，在悬臂的尖端处将探针芯片大量布置在悬臂的尖端，而悬臂是双面波束型的，并且多芯片设置在 光束的中心，其中多芯片的记录/再现部分被设置成一个一个地对应于记录点，并且多芯片形成表面与记录介质的表面平行地上下移动，由于 吸引力使其与记录点接触，并且在其接触之后进行电力，从而在结构中进行记录; 其中，由于可以一次读取/写入大量数据，因此可以提高数据传送速度。 此外，通过利用多芯片进行R / W，与单个芯片相比，可以减少多芯片的移动距离，从而减少磨损。 此外，由于所述芯片的前端部的曲率半径大于等于50nm以上的曲率半径，并且由于其与记录介质的表面平行地移动，所以可以与 表面在条件下，不是点接触，而是靠近平面接触，因此，磨损可以进一步降低，有效。

    Recording/reproducing apparatus
    2.
    发明申请
    Recording/reproducing apparatus 有权
    记录/再现装置

    公开(公告)号：US20060002272A1

    公开(公告)日：2006-01-05

    申请号：US11170085

    申请日：2005-06-30

    申请人： Mieko Ishii ,  Takeshi Harada ,  Youichi Inoue ,  Kenchi Ito

    发明人： Mieko Ishii ,  Takeshi Harada ,  Youichi Inoue ,  Kenchi Ito

    IPC分类号： G11B9/00

    CPC分类号： B82Y10/00 ,  G11B9/1445 ,  G11B9/149

    摘要： For providing a recording/reproducing apparatus, for recording/reproducing information through conduction of electricity upon contact of a probe, having large recording density and a large transfer speed, but less in deterioration of a probe chips thereof, and being long in the lifetime thereof, within the recording/reproducing apparatus, a multi-chip is formed, disposing probe chips in large numbers thereof at a tip of a cantilever, while the cantilever is of a double-sided beam type, and the multi-chip is disposed at a center of the beam, wherein recording/reproducing portions of the multi-chip are disposed to correspond to recording dots one by one, and the multi-chip forming surface is moved up and down in parallel with the surface of a recording medium, due to suction force, so as to bring it to be in contact with the recording dots, and electricity is conducted after the contact thereof, thereby conducting the recording, in the structure; wherein, since a large amount of data can be read/written at one time, therefore it is possible to improve data transfer speed. Also, with conducting the R/W by means of the multi-chip, comparing to the single chip, it is possible to reduce the traveling distance of the multi-chip, thereby to reduce the abrasion. Also, since the tip portion of the said chip has the curvature radius, being large, such as, equal to 50 nm or greater than that, and since it moves in parallel with the surface of the recording medium, it can be in contact with the surface under the condition of, not the point contact, but near to the plane contact, therefore, the abrasion can be further reduced, effectively.

    摘要翻译： 为了提供一种记录/再现装置，用于通过探针接触时的电传导来记录/再现信息，具有大的记录密度和大的传送速度，但是在其探针芯片的劣化中较少，并且在其寿命期间较长 在记录/再现装置中，形成多芯片，在悬臂的尖端处将探针芯片大量布置在悬臂的尖端，而悬臂是双面波束型的，并且多芯片设置在 光束的中心，其中多芯片的记录/再现部分被设置成一个一个地对应于记录点，并且多芯片形成表面与记录介质的表面平行地上下移动，由于 吸引力使其与记录点接触，并且在其接触之后进行电力，从而在结构中进行记录; 其中，由于可以一次读取/写入大量数据，因此可以提高数据传送速度。 此外，通过利用多芯片进行R / W，与单个芯片相比，可以减少多芯片的移动距离，从而减少磨损。 此外，由于所述芯片的尖端部分的曲率半径大，等于50nm以上，并且由于其与记录介质的表面平行移动，所以其可以与 表面在条件下，不是点接触，而是靠近平面接触，因此，磨损可以进一步降低，有效。

    Recording/reproducing apparatus
    3.
    发明申请
    Recording/reproducing apparatus 有权

    公开(公告)号：US20060092811A1

    公开(公告)日：2006-05-04

    申请号：US11192396

    申请日：2005-07-29

    申请人： Mieko Ishii ,  Takeshi Harada

    发明人： Mieko Ishii ,  Takeshi Harada

    IPC分类号： G11B7/00

    CPC分类号： G11B9/1436 ,  G01Q70/06 ,  G01Q80/00 ,  G11B9/1454

    摘要： In a recording/reproducing apparatus having a large number of probes, being still usable continuously when several pieces of the probes are in trouble, wherein a plural number of probes are so disposed that they can make recording and/or reproducing onto the same recording area, which is in charge of the probes, respectively, and when defect, such as, a trouble is generated within a first probe, that defect is detected, automatically, so as to exchanged into a spare probe built within the frame, thereby compensating the defect.

    Recording/reproducing apparatus
    4.
    发明授权
    Recording/reproducing apparatus 有权
    记录/再现装置

    公开(公告)号：US07483362B2

    公开(公告)日：2009-01-27

    申请号：US11192396

    申请日：2005-07-29

    申请人： Mieko Ishii ,  Takeshi Harada

    发明人： Mieko Ishii ,  Takeshi Harada

    IPC分类号： G11B9/00

    CPC分类号： G11B9/1436 ,  G01Q70/06 ,  G01Q80/00 ,  G11B9/1454

    摘要： In a recording/reproducing apparatus having a large number of probes, being still usable continuously when several pieces of the probes are in trouble, wherein a plural number of probes are so disposed that they can make recording and/or reproducing onto the same recording area, which is in charge of the probes, respectively, and when defect, such as, a trouble is generated within a first probe, that defect is detected, automatically, so as to exchanged into a spare probe built within the frame, thereby compensating the defect.

    摘要翻译： 在具有大量探针的记录/再现装置中，当数个探针处于故障状态时，可连续使用，其中多个探针被设置成使得它们可以在相同的记录区域上进行记录和/或再现 分别负责探针，并且当在第一探针内产生诸如故障的缺陷时，自动检测到缺陷，以便交换到构成在框架内的备用探针，从而补偿 缺陷。

    Apparatus for diagnosing temperature state of carrier of catalyst converter
    5.
    发明授权
    Apparatus for diagnosing temperature state of carrier of catalyst converter 有权
    用于诊断催化转化器载体温度状态的装置

    公开(公告)号：US08775051B2

    公开(公告)日：2014-07-08

    申请号：US13096344

    申请日：2011-04-28

    申请人： Taro Hirai ,  Noriaki Ikemoto ,  Takeshi Harada ,  Naoyuki Kamiya ,  Hisashi Iida

    发明人： Taro Hirai ,  Noriaki Ikemoto ,  Takeshi Harada ,  Naoyuki Kamiya ,  Hisashi Iida

    IPC分类号： F02D41/00 ,  G06F11/00

    CPC分类号： F01N11/005 ,  F01N3/101 ,  F01N3/2026 ,  F01N9/00 ,  F01N13/009 ,  F01N2550/22 ,  F01N2900/0602 ,  F01N2900/1602 ,  F23G5/50 ,  F23G7/07 ,  Y02T10/22 ,  Y02T10/26 ,  Y02T10/47

    摘要： An apparatus is used for diagnosing the temperature state of a catalyst converter. The catalyst converter includes a catalyst for cleaning an emission, and a conductive carrier for carrying the catalyst. The conductive carrier is energized for temperature rise of the catalyst, and the conductive carrier has a characteristic in which resistance drops with temperature increase. In the apparatus, a first obtaining unit obtains a first parameter having a first correlation with supply power to the conductive carrier for energization of the conductive carrier. A second obtaining unit obtains a second parameter having a second correlation with a temperature of the conductive carrier. A diagnosing unit diagnoses the temperature state of the conductive carrier based on a comparison between the first parameter and the second parameter.

    摘要翻译： 一种装置用于诊断催化转化器的温度状态。 催化剂转化器包括用于清洁发射的催化剂和用于承载催化剂的导电载体。 导电载体通电用于催化剂的升温，并且导电载体具有其中电阻随温度升高而下降的特性。 在该装置中，第一获取单元获得与导电载体具有与供电功率的第一相关性的第一参数，以对导电载体通电。 第二获取单元获得与导电载体的温度具有第二相关性的第二参数。 诊断单元基于第一参数和第二参数之间的比较来诊断导电载体的温度状态。

    Method for manufacturing group III nitride semiconductor light emitting element, group III nitride semiconductor light emitting element and lamp
    6.
    发明授权
    Method for manufacturing group III nitride semiconductor light emitting element, group III nitride semiconductor light emitting element and lamp 有权
    III族氮化物半导体发光元件，III族氮化物半导体发光元件和灯的制造方法

    公开(公告)号：US08772060B2

    公开(公告)日：2014-07-08

    申请号：US13119127

    申请日：2009-09-14

    申请人： Hiromitsu Sakai ,  Takeshi Harada

    发明人： Hiromitsu Sakai ,  Takeshi Harada

    IPC分类号： H01L33/30 ,  H01L33/36 ,  H01L21/02 ,  H01L33/00

    CPC分类号： H01L21/0254 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02573 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

    摘要： The present invention provides a method for manufacturing a group III nitride semiconductor light emitting element, with which warping can be suppressed upon the formation of respective layers on the substrate, a semiconductor layer including a light emitting layer of excellent crystallinity can be formed, and excellent light emission characteristics can be obtained; such a group III nitride semiconductor light emitting element; and a lamp. Specifically disclosed is a method for manufacturing a group III nitride semiconductor light emitting element, in which an intermediate layer, an underlayer, an n-type contact layer, an n-type cladding layer, a light emitting layer, a p-type cladding layer, and a p-type contact layer are laminated in sequence on a principal plane of a substrate, wherein a substrate having a diameter of 4 inches (100 mm) or larger, with having an amount of warping H within a range from 0.1 to 30 μm and at least a part of the edge of the substrate warping toward the principal plane at room temperature, is prepared as the substrate; the X-ray rocking curve full width at half maximum (FWHM) of the (0002) plane is 100 arcsec or less and the X-ray rocking curve FWHM of the (10-10) plane is 300 arcsec or less, in a state where the intermediate layer has been formed on the substrate and where thereafter the underlayer and the n-type contact layer are formed on the intermediate layer; and furthermore the n-type cladding layer, the light emitting layer, the p-type cladding layer, and the p-type contact layer are formed on the n-type contact layer.

    摘要翻译： 本发明提供一种制造III族氮化物半导体发光元件的方法，可以在基板上形成各层的同时抑制翘曲，可以形成包括具有优异结晶性的发光层的半导体层，并且优异 可获得发光特性; 这样的III族氮化物半导体发光元件; 和一盏灯。 具体公开了一种III族氮化物半导体发光元件的制造方法，其中中间层，下层，n型接触层，n型包覆层，发光层，p型包覆层 和p型接触层依次层叠在基板的主平面上，其中直径为4英寸（100mm）以上的基板，其翘曲度H在0.1〜30的范围内 并且准备在室温下朝向主平面翘曲的基板的边缘的至少一部分作为基板; （0002）面的X射线摇摆曲线半峰全宽（FWHM）为100弧秒以下，（10-10）面的X射线摇摆曲线FWHM为300arcsec以下，处于 其中中间层已经形成在衬底上，然后在中间层上形成底层和n型接触层; 此外，在n型接触层上形成n型包覆层，发光层，p型覆层和p型接触层。

    Side release buckle
    7.
    发明授权
    Side release buckle 有权
    侧扣扣

    公开(公告)号：US08677576B2

    公开(公告)日：2014-03-25

    申请号：US13258133

    申请日：2009-12-25

    申请人： Ryoichiro Uehara ,  Tomoko Yagami ,  Yasutaka Nishida ,  Takeshi Harada ,  Kenichi Yoshie

    发明人： Ryoichiro Uehara ,  Tomoko Yagami ,  Yasutaka Nishida ,  Takeshi Harada ,  Kenichi Yoshie

    IPC分类号： A44B11/25

    CPC分类号： A44B11/25 ,  A44B11/2546 ,  A44B11/266 ,  Y10T24/45241 ,  Y10T24/45257 ,  Y10T24/45272 ,  Y10T24/45471 ,  Y10T24/45476 ,  Y10T24/45482 ,  Y10T24/45497 ,  Y10T24/45508 ,  Y10T24/45513 ,  Y10T24/45524 ,  Y10T24/45529 ,  Y10T24/45534 ,  Y10T24/45581 ,  Y10T24/45984

    摘要： A side release buckle includes a plug and a socket into which the plug is inserted for engagement. The plug includes: a base provided with a belt attachment; a pair of legs projecting from the base; an engaging portion formed to the legs; and a connecting portion connecting the legs to each other. The socket includes: a body provided with a belt attachment and an insertion opening; a housing space formed in the body and housing the legs inserted from the insertion opening; an engaged portion formed in the body and engageable with the engaging portion; and a cutout dented toward the insertion opening from an edge of the belt attachment. The cutout is formed over an area surrounded by the legs and the connecting portion when the legs and the connecting portion are housed in the housing space while the engaging portion and the engaged portion are engaged.

    摘要翻译： 侧释放带扣包括插头和插座，插头插入插座中用于接合。 插头包括：带有皮带附件的底座; 一对从基座突出的腿; 形成于所述腿部的卡合部; 以及将腿彼此连接的连接部。 插座包括：设置有皮带附件和插入开口的主体; 形成在所述主体中并容纳从所述插入开口插入的所述腿部的容纳空间; 接合部，形成在主体中并与接合部接合; 以及从皮带附件的边缘朝向插入开口凹陷的切口。 当接合部和接合部接合时，当腿和连接部容纳在容纳空间中时，切口形成在由腿和连接部围绕的区域上。