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    Method of depositing boron nitride and boron nitride-derived materials
    3.
    发明授权
    Method of depositing boron nitride and boron nitride-derived materials 有权
    沉积氮化硼和氮化硼衍生材料的方法

    公开(公告)号：US08084105B2

    公开(公告)日：2011-12-27

    申请号：US11765257

    申请日：2007-06-19

    申请人： Jeong-Uk Huh ,  Mihaela Balseanu ,  Li-Qun Xia ,  Victor T. Nguyen ,  Derek R. Witty ,  Hichem M'Saad

    发明人： Jeong-Uk Huh ,  Mihaela Balseanu ,  Li-Qun Xia ,  Victor T. Nguyen ,  Derek R. Witty ,  Hichem M'Saad

    IPC分类号： H05H1/24

    CPC分类号： C23C16/342 ,  C23C16/45523

    摘要： Methods for forming boron-containing films are provided. The methods include introducing a boron-containing precursor and a nitrogen or oxygen-containing precursor into a chamber and forming a boron nitride or boron oxide film on a substrate in the chamber. In one aspect, the method includes depositing a boron-containing film and then exposing the boron-containing film to the nitrogen-containing or oxygen-containing precursor to incorporate nitrogen or oxygen into the film. The deposition of the boron-containing film and exposure of the film to the precursor may be performed for multiple cycles to obtain a desired thickness of the film. In another aspect, the method includes reacting the boron-containing precursor and the nitrogen-containing or oxygen-containing precursor to chemically vapor deposit the boron nitride or boron oxide film.

    摘要翻译： 提供了形成含硼膜的方法。 所述方法包括将含硼前体和含氮或含氧前体引入室中，并在室中的基底上形成氮化硼或氧化硼膜。 一方面，该方法包括沉积含硼膜，然后将含硼膜暴露于含氮或含氧前体以将氮或氧引入膜中。 含硼膜的沉积和膜暴露于前体可以进行多个循环以获得所需的膜厚度。 另一方面，该方法包括使含硼前体和含氮或含氧前体反应以化学气相沉积氮化硼或氧化硼膜。

    Copper oxide removal techniques
    6.
    发明授权
    Copper oxide removal techniques 有权
    氧化铜去除技术

    公开(公告)号：US08758638B2

    公开(公告)日：2014-06-24

    申请号：US13104314

    申请日：2011-05-10

    申请人： Weifeng Ye ,  Victor Nguyen ,  Mei-Yee Shek ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty

    发明人： Weifeng Ye ,  Victor Nguyen ,  Mei-Yee Shek ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty

    IPC分类号： H01L21/3065 ,  H01L21/302

    CPC分类号： H01L21/02074 ,  H01L21/76883

    摘要： A method for the removal of copper oxide from a copper and dielectric containing structure of a semiconductor chip is provided. The copper and dielectric containing structure may be planarized by chemical mechanical planarization (CMP) and treated by the method to remove copper oxide and CMP residues. Annealing in a hydrogen (H2) gas and ultraviolet (UV) environment removes copper oxide, and a pulsed ammonia plasma removes CMP residues.

    摘要翻译： 提供了一种从铜中除去氧化铜和包含半导体芯片的结构的方法。 可以通过化学机械平面化（CMP）对包含铜和电介质的结构进行平面化，并通过除去氧化铜和CMP残留物的方法进行处理。 在氢（H2）气体和紫外线（UV）环境中退火除去氧化铜，脉冲氨等离子体去除CMP残留物。

    Low temperature plasma enhanced chemical vapor deposition of conformal silicon carbon nitride and silicon nitride films
    7.
    发明授权
    Low temperature plasma enhanced chemical vapor deposition of conformal silicon carbon nitride and silicon nitride films 有权
    低温等离子体增强了保形硅氮化硅和氮化硅膜的化学气相沉积

    公开(公告)号：US08586487B2

    公开(公告)日：2013-11-19

    申请号：US13353063

    申请日：2012-01-18

    申请人： Victor Nguyen ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty

    发明人： Victor Nguyen ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty

    IPC分类号： H01L21/469

    CPC分类号： H01L21/02167 ,  C23C16/345 ,  C23C16/56 ,  H01L21/0217 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/823807 ,  H01L29/7843

    摘要： Methods and apparatus for forming conformal silicon nitride films at low temperatures on a substrate are provided. The methods of forming a silicon nitride layer include performing a deposition cycle including flowing a processing gas mixture into a processing chamber having a substrate therein, wherein the processing gas mixture comprises precursor gas molecules having labile silicon to nitrogen, silicon to carbon, or nitrogen to carbon bonds, activating the precursor gas at a temperature between about 20° C. to about 480° C. by preferentially breaking labile bonds to provide one or more reaction sites along a precursor gas molecule, forming a precursor material layer on the substrate, wherein the activated precursor gas molecules bond with a surface on the substrate at the one or more reaction sites, and performing a plasma treatment process on the precursor material layer to form a conformal silicon nitride layer.

    摘要翻译： 提供了在基板上在低温下形成共形氮化硅膜的方法和装置。 形成氮化硅层的方法包括进行沉积循环，包括使处理气体混合物流入其中具有衬底的处理室，其中处理气体混合物包含具有不稳定硅到氮，硅到碳或氮的前体气体分子， 碳键，在约20℃至约480℃的温度下活化前体气体，通过优先断开不稳定键以提供沿着前体气体分子的一个或多个反应位点，在基底上形成前体材料层，其中 活化的前体气体分子与一个或多个反应位点处的衬底上的表面结合，并对前体材料层进行等离子体处理工艺以形成共形氮化硅层。

    LOW TEMPERATURE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION OF CONFORMAL SILICON CARBON NITRIDE AND SILICON NITRIDE FILMS
    8.
    发明申请
    LOW TEMPERATURE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION OF CONFORMAL SILICON CARBON NITRIDE AND SILICON NITRIDE FILMS 有权
    低温等离子体增强化学气相沉积法合成硅氮化硅和氮化硅膜

    公开(公告)号：US20130183835A1

    公开(公告)日：2013-07-18

    申请号：US13353063

    申请日：2012-01-18

    申请人： Victor Nguyen ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty

    发明人： Victor Nguyen ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty

    IPC分类号： H01L21/318

    CPC分类号： H01L21/02167 ,  C23C16/345 ,  C23C16/56 ,  H01L21/0217 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/823807 ,  H01L29/7843

    摘要： Methods and apparatus for forming conformal silicon nitride films at low temperatures on a substrate are provided. The methods of forming a silicon nitride layer include performing a deposition cycle including flowing a processing gas mixture into a processing chamber having a substrate therein, wherein the processing gas mixture comprises precursor gas molecules having labile silicon to nitrogen, silicon to carbon, or nitrogen to carbon bonds, activating the precursor gas at a temperature between about 20° C. to about 480° C. by preferentially breaking labile bonds to provide one or more reaction sites along a precursor gas molecule, forming a precursor material layer on the substrate, wherein the activated precursor gas molecules bond with a surface on the substrate at the one or more reaction sites, and performing a plasma treatment process on the precursor material layer to form a conformal silicon nitride layer.

    摘要翻译： 提供了在基板上在低温下形成共形氮化硅膜的方法和装置。 形成氮化硅层的方法包括进行沉积循环，包括使处理气体混合物流入其中具有衬底的处理室，其中处理气体混合物包含具有不稳定硅到氮，硅到碳或氮的前体气体分子， 碳键，在约20℃至约480℃的温度下活化前体气体，通过优先断开不稳定键以提供沿着前体气体分子的一个或多个反应位点，在基底上形成前体材料层，其中 活化的前体气体分子与一个或多个反应位点处的衬底上的表面结合，并对前体材料层进行等离子体处理工艺以形成共形氮化硅层。

    BORON NITRIDE AND BORON NITRIDE-DERIVED MATERIALS DEPOSITION METHOD
    10.
    发明申请
    BORON NITRIDE AND BORON NITRIDE-DERIVED MATERIALS DEPOSITION METHOD 有权
    氮化硼和硼硼衍生物质沉积方法

    公开(公告)号：US20080292798A1

    公开(公告)日：2008-11-27

    申请号：US11765257

    申请日：2007-06-19

    申请人： Jeong-Uk Huh ,  Mihaela Balseanu ,  Li-Qun Xia ,  Victor T. Nguyen ,  Derek R. Witty ,  Hichem M'saad

    发明人： Jeong-Uk Huh ,  Mihaela Balseanu ,  Li-Qun Xia ,  Victor T. Nguyen ,  Derek R. Witty ,  Hichem M'saad

    IPC分类号： B05D3/04

    CPC分类号： C23C16/342 ,  C23C16/45523

    摘要： Methods for forming boron-containing films are provided. The methods include introducing a boron-containing precursor and a nitrogen or oxygen-containing precursor into a chamber and forming a boron nitride or boron oxide film on a substrate in the chamber. In one aspect, the method includes depositing a boron-containing film and then exposing the boron-containing film to the nitrogen-containing or oxygen-containing precursor to incorporate nitrogen or oxygen into the film. The deposition of the boron-containing film and exposure of the film to the precursor may be performed for multiple cycles to obtain a desired thickness of the film. In another aspect, the method includes reacting the boron-containing precursor and the nitrogen-containing or oxygen-containing precursor to chemically vapor deposit the boron nitride or boron oxide film.

    摘要翻译： 提供了形成含硼膜的方法。 所述方法包括将含硼前体和含氮或含氧前体引入室中，并在室中的基底上形成氮化硼或氧化硼膜。 一方面，该方法包括沉积含硼膜，然后将含硼膜暴露于含氮或含氧前体以将氮或氧引入膜中。 含硼膜的沉积和膜暴露于前体可以进行多个循环以获得所需的膜厚度。 另一方面，该方法包括使含硼前体和含氮或含氧前体反应以化学气相沉积氮化硼或氧化硼膜。