公开(公告)号：US20060269693A1

公开(公告)日：2006-11-30

申请号：US11400275

申请日：2006-04-07

申请人： Mihaela Balseanu ,  Michael Cox ,  Li-Qun Xia ,  Mei-Yee Shek ,  Jia Lee ,  Vladimir Zubkov ,  Tzu-Fang Huang ,  Rongping Wang ,  Isabelita Roflox ,  Hichem M'Saad

发明人： Mihaela Balseanu ,  Michael Cox ,  Li-Qun Xia ,  Mei-Yee Shek ,  Jia Lee ,  Vladimir Zubkov ,  Tzu-Fang Huang ,  Rongping Wang ,  Isabelita Roflox ,  Hichem M'Saad

IPC分类号： H05H1/24 ,  B05D3/00

CPC分类号： C23C16/345 ,  C23C16/45523 ,  C23C16/56 ,  H01L21/3141 ,  H01L21/3185 ,  H01L21/823412 ,  H01L21/82345 ,  H01L21/823807 ,  H01L21/823835

摘要： High tensile stress in a deposited layer such as silicon nitride, may be achieved utilizing one or more techniques, employed alone or in combination. High tensile stress may be achieved by forming a silicon-containing layer on a surface by exposing the surface to a silicon-containing precursor gas in the absence of a plasma, forming silicon nitride by exposing said silicon-containing layer to a nitrogen-containing plasma, and then repeating these steps to increase a thickness of the silicon nitride created thereby. High tensile stress may also be achieved by exposing a surface to a silicon-containing precursor gas in a first nitrogen-containing plasma, treating the material with a second nitrogen-containing plasma, and then repeating these steps to increase a thickness of the silicon nitride formed thereby. In another embodiment, tensile film stress is enhanced by deposition with porogens that are liberated upon subsequent exposure to UV radiation or plasma treatment.

摘要翻译： 沉积层如氮化硅中的高拉伸应力可以利用单独使用或组合使用的一种或多种技术来实现。 可以通过在不存在等离子体的情况下将表面暴露于含硅前体气体而在表面上形成含硅层来形成高拉伸应力，通过将含硅层暴露于含氮等离子体而形成氮化硅 ，然后重复这些步骤以增加由此产生的氮化硅的厚度。 也可以通过在第一含氮等离子体中将表面暴露于含硅前体气体，用第二含氮等离子体处理该材料，然后重复这些步骤以增加氮化硅的厚度来实现高拉伸应力 由此形成。 在另一个实施方案中，拉伸膜应力通过在随后暴露于UV辐射或等离子体处理时释放的孔原子沉积而增强。

公开(公告)号：US08753989B2

公开(公告)日：2014-06-17

申请号：US13365229

申请日：2012-02-02

申请人： Mihaela Balseanu ,  Michael S. Cox ,  Li-Qun Xia ,  Mei-Yee Shek ,  Jia Lee ,  Vladimir Zubkov ,  Tzu-Fang Huang ,  Rongping Wang ,  Isabelita Roflox ,  Hichem M'Saad

发明人： Mihaela Balseanu ,  Michael S. Cox ,  Li-Qun Xia ,  Mei-Yee Shek ,  Jia Lee ,  Vladimir Zubkov ,  Tzu-Fang Huang ,  Rongping Wang ,  Isabelita Roflox ,  Hichem M'Saad

IPC分类号： H01L21/31

CPC分类号： C23C16/345 ,  C23C16/45523 ,  C23C16/56 ,  H01L21/3141 ,  H01L21/3185 ,  H01L21/823412 ,  H01L21/82345 ,  H01L21/823807 ,  H01L21/823835

摘要： High tensile stress in a deposited layer, such as a silicon nitride layer, may be achieved utilizing one or more techniques employed either alone or in combination. In one embodiment, a silicon nitride film having high tensile stress may be formed by depositing the silicon nitride film in the presence of a porogen. The deposited silicon nitride film may be exposed to at least one treatment selected from a plasma or ultraviolet radiation to liberate the porogen. The silicon nitride film may be densified such that a pore resulting from liberation of the porogen is reduced in size, and Si—N bonds in the silicon nitride film are strained to impart a tensile stress in the silicon nitride film. In another embodiment, tensile stress in a silicon nitride film may be enhanced by depositing a silicon nitride film in the presence of a nitrogen-containing plasma at a temperature of less than about 400° C., and exposing the deposited silicon nitride film to ultraviolet radiation.

摘要翻译： 沉积层（例如氮化硅层）中的高拉伸应力可以利用单独使用或组合使用的一种或多种技术来实现。 在一个实施例中，可以通过在致孔剂的存在下沉积氮化硅膜来形成具有高拉伸应力的氮化硅膜。 沉积的氮化硅膜可以暴露于选自等离子体或紫外线辐射的至少一种处理以释放致孔剂。 可以使氮化硅膜致密化，使致孔剂释放产生的孔尺寸减小，并且氮化硅膜中的Si-N键变形以在氮化硅膜中产生拉伸应力。 在另一个实施例中，可以通过在低于约400℃的温度下在含氮等离子体的存在下沉积氮化硅膜来增强氮化硅膜中的拉伸应力，并将沉积的氮化硅膜暴露于紫外线 辐射。

公开(公告)号：US20120196452A1

公开(公告)日：2012-08-02

申请号：US13365229

申请日：2012-02-02

申请人： Mihaela Balseanu ,  Michael S. Cox ,  Li-Qun Xia ,  Mei-Yee Shek ,  Jia Lee ,  Vladimir Zubkov ,  Tzu-Fang Huang ,  Rongping Wang ,  Isabelita Roflox ,  Hichem M'Saad

发明人： Mihaela Balseanu ,  Michael S. Cox ,  Li-Qun Xia ,  Mei-Yee Shek ,  Jia Lee ,  Vladimir Zubkov ,  Tzu-Fang Huang ,  Rongping Wang ,  Isabelita Roflox ,  Hichem M'Saad

IPC分类号： H01L21/318

CPC分类号： C23C16/345 ,  C23C16/45523 ,  C23C16/56 ,  H01L21/3141 ,  H01L21/3185 ,  H01L21/823412 ,  H01L21/82345 ,  H01L21/823807 ,  H01L21/823835

摘要： High tensile stress in a deposited layer, such as a silicon nitride layer, may be achieved utilizing one or more techniques employed either alone or in combination. In one embodiment, a silicon nitride film having high tensile stress may be formed by depositing the silicon nitride film in the presence of a porogen. The deposited silicon nitride film may be exposed to at least one treatment selected from a plasma or ultraviolet radiation to liberate the porogen. The silicon nitride film may be densified such that a pore resulting from liberation of the porogen is reduced in size, and Si—N bonds in the silicon nitride film are strained to impart a tensile stress in the silicon nitride film. In another embodiment, tensile stress in a silicon nitride film may be enhanced by depositing a silicon nitride film in the presence of a nitrogen-containing plasma at a temperature of less than about 400° C., and exposing the deposited silicon nitride film to ultraviolet radiation.

摘要翻译： 沉积层（例如氮化硅层）中的高拉伸应力可以利用单独使用或组合使用的一种或多种技术来实现。 在一个实施例中，可以通过在致孔剂的存在下沉积氮化硅膜来形成具有高拉伸应力的氮化硅膜。 沉积的氮化硅膜可以暴露于选自等离子体或紫外线辐射的至少一种处理以释放致孔剂。 可以使氮化硅膜致密化，使致孔剂释放产生的孔尺寸减小，并且氮化硅膜中的Si-N键变形以在氮化硅膜中产生拉伸应力。 在另一个实施例中，可以通过在低于约400℃的温度下在含氮等离子体的存在下沉积氮化硅膜来增强氮化硅膜中的拉伸应力，并将沉积的氮化硅膜暴露于紫外线 辐射。

公开(公告)号：US08129290B2

公开(公告)日：2012-03-06

申请号：US11400275

申请日：2006-04-07

申请人： Mihaela Balseanu ,  Michael S. Cox ,  Li-Qun Xia ,  Mei-Yee Shek ,  Jia Lee ,  Vladimir Zubkov ,  Tzu-Fang Huang ,  Rongping Wang ,  Isabelita Roflox ,  Hichem M'Saad

发明人： Mihaela Balseanu ,  Michael S. Cox ,  Li-Qun Xia ,  Mei-Yee Shek ,  Jia Lee ,  Vladimir Zubkov ,  Tzu-Fang Huang ,  Rongping Wang ,  Isabelita Roflox ,  Hichem M'Saad

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C23C16/345 ,  C23C16/45523 ,  C23C16/56 ,  H01L21/3141 ,  H01L21/3185 ,  H01L21/823412 ,  H01L21/82345 ,  H01L21/823807 ,  H01L21/823835

摘要： High tensile stress in a deposited layer such as silicon nitride, may be achieved utilizing one or more techniques, employed alone or in combination. High tensile stress may be achieved by forming a silicon-containing layer on a surface by exposing the surface to a silicon-containing precursor gas in the absence of a plasma, forming silicon nitride by exposing said silicon-containing layer to a nitrogen-containing plasma, and then repeating these steps to increase a thickness of the silicon nitride created thereby. High tensile stress may also be achieved by exposing a surface to a silicon-containing precursor gas in a first nitrogen-containing plasma, treating the material with a second nitrogen-containing plasma, and then repeating these steps to increase a thickness of the silicon nitride formed thereby. In another embodiment, tensile film stress is enhanced by deposition with porogens that are liberated upon subsequent exposure to UV radiation or plasma treatment.

摘要翻译： 沉积层如氮化硅中的高拉伸应力可以利用单独使用或组合使用的一种或多种技术来实现。 可以通过在不存在等离子体的情况下将表面暴露于含硅前体气体而在表面上形成含硅层来形成高拉伸应力，通过将含硅层暴露于含氮等离子体而形成氮化硅 ，然后重复这些步骤以增加由此产生的氮化硅的厚度。 也可以通过在第一含氮等离子体中将表面暴露于含硅前体气体，用第二含氮等离子体处理该材料，然后重复这些步骤以增加氮化硅的厚度来实现高拉伸应力 由此形成。 在另一个实施方案中，拉伸膜应力通过在随后暴露于UV辐射或等离子体处理时释放的孔原子沉积而增强。

公开(公告)号：US20060269692A1

公开(公告)日：2006-11-30

申请号：US11398146

申请日：2006-04-05

申请人： Mihaela Balseanu ,  Li-Qun Xia ,  Vladimir Zubkov ,  Mei-Yee Shek ,  Isabelita Roflox ,  Hichem M'Saad

发明人： Mihaela Balseanu ,  Li-Qun Xia ,  Vladimir Zubkov ,  Mei-Yee Shek ,  Isabelita Roflox ,  Hichem M'Saad

IPC分类号： H05H1/24 ,  B05D3/00

CPC分类号： C23C16/345 ,  C23C16/0245 ,  C23C16/0272 ,  C23C16/56 ,  H01L21/3185

摘要： Compressive stress in a film of a semiconductor device may be controlled utilizing one or more techniques, employed alone or in combination. A first set of embodiments increase silicon nitride compressive stress by adding hydrogen to the deposition chemistry, and reduce defects in a device fabricated with a high compressive stress silicon nitride film formed in the presence of hydrogen gas. A silicon nitride film may comprise an initiation layer formed in the absence of a hydrogen gas flow, underlying a high stress nitride layer formed in the presence of a hydrogen gas flow. A silicon nitride film formed in accordance with an embodiment of the present invention may exhibit a compressive stress of 2.8 GPa or higher.

摘要翻译： 半导体器件的膜中的压缩应力可以利用单独使用或组合使用的一种或多种技术来控制。 第一组实施例通过向沉积化学品加入氢而增加氮化硅压缩应力，并且减少在氢气存在下形成的高压缩应力氮化硅膜制造的器件中的缺陷。 氮化硅膜可以包括在不存在氢气流的情况下形成的起始层，位于在氢气流的存在下形成的高应力氮化物层的下面。 根据本发明的实施方案形成的氮化硅膜可以表现出2.8GPa或更高的压缩应力。

公开(公告)号：US20080020591A1

公开(公告)日：2008-01-24

申请号：US11762590

申请日：2007-06-13

申请人： Mihaela Balseanu ,  Victor Nguyen ,  Li-Qun Xia ,  Derek Witty ,  Hichem M'Saad ,  Mei-Yee Shek ,  Isabelita Roflox

发明人： Mihaela Balseanu ,  Victor Nguyen ,  Li-Qun Xia ,  Derek Witty ,  Hichem M'Saad ,  Mei-Yee Shek ,  Isabelita Roflox

IPC分类号： H01L21/31

CPC分类号： H01L21/3105 ,  C23C16/345 ,  C23C16/56 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/3185 ,  H01L21/823807 ,  H01L29/66583 ,  H01L29/7843

摘要： Stress of a silicon nitride layer may be enhanced by deposition at higher temperatures. Employing an apparatus that allows heating of a substrate to substantially greater than 400° C. (for example a heater made from ceramic rather than aluminum), the silicon nitride film as-deposited may exhibit enhanced stress allowing for improved performance of the underlying MOS transistor device. In accordance with alternative embodiments, a deposited silicon nitride film is exposed to curing with ultraviolet (UV) radiation at an elevated temperature, thereby helping remove hydrogen from the film and increasing film stress. In accordance with still other embodiments, a silicon nitride film is formed utilizing an integrated process employing a number of deposition/curing cycles to preserve integrity of the film at the sharp corner of the underlying raised feature. Adhesion between successive layers may be promoted by inclusion of a post-UV cure plasma treatment in each cycle.

摘要翻译： 氮化硅层的应力可以通过在较高温度下沉积来增强。 使用允许将衬底加热到​​基本上大于400℃的装置（例如由陶瓷而不是铝制成的加热器），沉积的氮化硅膜可能表现出增强的应力，从而可以改善下面的MOS晶体管的性能 设备。 根据替代实施例，沉积的氮化硅膜在升高的温度下暴露于紫外线（UV）辐射固化，从而有助于从膜中除去氢并增加膜应力。 根据其他实施例，使用采用多个沉积/固化周期的整合方法形成氮化硅膜，以保持薄膜在底层凸起特征的尖角处的完整性。 可以通过在每个循环中包括UV后固化等离子体处理来促进连续层之间的粘附。

公开(公告)号：US08138104B2

公开(公告)日：2012-03-20

申请号：US11762590

申请日：2007-06-13

申请人： Mihaela Balseanu ,  Victor Nguyen ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad ,  Mei-Yee Shek ,  Isabelita Roflox

发明人： Mihaela Balseanu ,  Victor Nguyen ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad ,  Mei-Yee Shek ,  Isabelita Roflox

IPC分类号： H01L21/469

CPC分类号： H01L21/3105 ,  C23C16/345 ,  C23C16/56 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/3185 ,  H01L21/823807 ,  H01L29/66583 ,  H01L29/7843

摘要： Stress of a silicon nitride layer may be enhanced by deposition at higher temperatures. Employing an apparatus that allows heating of a substrate to substantially greater than 400° C. (for example a heater made from ceramic rather than aluminum), the silicon nitride film as-deposited may exhibit enhanced stress allowing for improved performance of the underlying MOS transistor device. In accordance with alternative embodiments, a deposited silicon nitride film is exposed to curing with ultraviolet (UV) radiation at an elevated temperature, thereby helping remove hydrogen from the film and increasing film stress. In accordance with still other embodiments, a silicon nitride film is formed utilizing an integrated process employing a number of deposition/curing cycles to preserve integrity of the film at the sharp corner of the underlying raised feature. Adhesion between successive layers may be promoted by inclusion of a post-UV cure plasma treatment in each cycle.

摘要翻译： 氮化硅层的应力可以通过在较高温度下沉积来增强。 使用允许将衬底加热到​​基本上大于400℃的装置（例如由陶瓷而不是铝制成的加热器），沉积的氮化硅膜可能表现出增强的应力，从而可以改善下面的MOS晶体管的性能 设备。 根据替代实施例，沉积的氮化硅膜在升高的温度下暴露于紫外线（UV）辐射固化，从而有助于从膜中除去氢并增加膜应力。 根据其他实施例，使用采用多个沉积/固化周期的整合方法形成氮化硅膜，以保持薄膜在底层凸起特征的尖角处的完整性。 可以通过在每个循环中包括UV后固化等离子体处理来促进连续层之间的粘附。

公开(公告)号：US20120196450A1

公开(公告)日：2012-08-02

申请号：US13365226

申请日：2012-02-02

申请人： Mihaela Balseanu ,  Victor Nguyen ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad ,  Mei-Yee Shek ,  Isabelita Roflox

发明人： Mihaela Balseanu ,  Victor Nguyen ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad ,  Mei-Yee Shek ,  Isabelita Roflox

IPC分类号： H01L21/3105 ,  H01L21/318 ,  H01L21/316

CPC分类号： H01L21/0234 ,  C23C16/345 ,  C23C16/56 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/3185 ,  H01L21/823807 ,  H01L29/66583 ,  H01L29/7843

摘要： Stress of a silicon nitride layer may be enhanced by deposition at higher temperatures. Employing an apparatus that allows heating of a substrate to substantially greater than 400° C. (for example a heater made from ceramic rather than aluminum), the silicon nitride film as-deposited may exhibit enhanced stress allowing for improved performance of the underlying MOS transistor device. In accordance with some embodiments, a deposited silicon nitride film is exposed to curing with plasma and ultraviolet (UV) radiation, thereby helping remove hydrogen from the film and increasing film stress. In accordance with other embodiments, a silicon nitride film is formed utilizing an integrated process employing a number of deposition/curing cycles to preserve integrity of the film at the sharp corner of the underlying raised feature. Adhesion between successive layers may be promoted by inclusion of a post-UV cure plasma treatment in each cycle.

摘要翻译： 氮化硅层的应力可以通过在较高温度下沉积来增强。 使用允许将衬底加热到​​基本上大于400℃的装置（例如由陶瓷而不是铝制成的加热器），沉积的氮化硅膜可能表现出增强的应力，从而可以改善下面的MOS晶体管的性能 设备。 根据一些实施例，沉积的氮化硅膜暴露于等离子体和紫外（UV）辐射的固化，从而有助于从膜中除去氢并增加膜应力。 根据其他实施例，使用采用多个沉积/固化循环的整合方法形成氮化硅膜，以在底层凸起特征的尖角处保留膜的完整性。 可以通过在每个循环中包括UV后固化等离子体处理来促进连续层之间的粘附。

公开(公告)号：US07732342B2

公开(公告)日：2010-06-08

申请号：US11398146

申请日：2006-04-05

申请人： Mihaela Balseanu ,  Li-Qun Xia ,  Vladimir Zubkov ,  Mei-Yee Shek ,  Isabelita Rolfox ,  Hichem M'Saad

发明人： Mihaela Balseanu ,  Li-Qun Xia ,  Vladimir Zubkov ,  Mei-Yee Shek ,  Isabelita Rolfox ,  Hichem M'Saad

IPC分类号： H01L21/302

CPC分类号： C23C16/345 ,  C23C16/0245 ,  C23C16/0272 ,  C23C16/56 ,  H01L21/3185

摘要： Compressive stress in a film of a semiconductor device may be controlled utilizing one or more techniques, employed alone or in combination. A first set of embodiments increase silicon nitride compressive stress by adding hydrogen to the deposition chemistry, and reduce defects in a device fabricated with a high compressive stress silicon nitride film formed in the presence of hydrogen gas. A silicon nitride film may comprise an initiation layer formed in the absence of a hydrogen gas flow, underlying a high stress nitride layer formed in the presence of a hydrogen gas flow. A silicon nitride film formed in accordance with an embodiment of the present invention may exhibit a compressive stress of 2.8 GPa or higher.

摘要翻译： 半导体器件的膜中的压缩应力可以利用单独使用或组合使用的一种或多种技术来控制。 第一组实施例通过向沉积化学品加入氢而增加氮化硅压缩应力，并且减少在氢气存在下形成的高压缩应力氮化硅膜制造的器件中的缺陷。 氮化硅膜可以包括在不存在氢气流的情况下形成的起始层，位于在氢气流的存在下形成的高应力氮化物层的下面。 根据本发明的实施方案形成的氮化硅膜可以表现出2.8GPa或更高的压缩应力。

公开(公告)号：US07566655B2

公开(公告)日：2009-07-28

申请号：US11398436

申请日：2006-04-05

申请人： Mihaela Balseanu ,  Jia Lee ,  Mei-Yee Shek ,  Amir Al-Bayati ,  Li-Qun Xia ,  Hichem M'Saad

发明人： Mihaela Balseanu ,  Jia Lee ,  Mei-Yee Shek ,  Amir Al-Bayati ,  Li-Qun Xia ,  Hichem M'Saad

IPC分类号： H01L21/44

CPC分类号： H01L29/7843 ,  C23C16/345 ,  C23C16/56 ,  H01L21/28044 ,  H01L21/823807 ,  H01L21/823835 ,  H01L21/823842 ,  H01L29/4925 ,  H01L29/66545 ,  H01L29/66583

摘要： A process flow integration scheme employs one or more techniques to control stress in a semiconductor device formed thereby. In accordance with one embodiment, cumulative stress contributed by RTP of a nitride spacer and polysilicon gate, and subsequent deposition of a high stress etch stop layer, enhance strain and improve device performance. Germanium may be deposited or implanted into the gate structure in order to facilitate stress control.

摘要翻译： 工艺流程集成方案采用一种或多种技术来控制由此形成的半导体器件中的应力。 根据一个实施例，由氮化物间隔物和多晶硅栅极的RTP贡献的累积应力以及随后沉积高应力蚀刻停止层，增强应变并提高器件性能。 可以将锗沉积或植入栅极结构中以便于应力控制。