公开(公告)号：US08691027B2

公开(公告)日：2014-04-08

申请号：US13670305

申请日：2012-11-06

申请人： Mikhail Korolik ,  Michael Ravkin ,  John de Larios ,  Fritz C. Redeker ,  John M. Boyd

发明人： Mikhail Korolik ,  Michael Ravkin ,  John de Larios ,  Fritz C. Redeker ,  John M. Boyd

IPC分类号： B08B3/00 ,  B08B7/00 ,  B08B7/04 ,  H01L21/67

CPC分类号： H01L21/67051 ,  G03F7/422 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/6704 ,  Y10S134/902

摘要： A pressure is maintained within a volume within which a semiconductor wafer resides at a pressure that is sufficient to maintain a liquid state of a precursor fluid to a non-Newtonian fluid. The precursor fluid is disposed proximate to a material to be removed from the semiconductor wafer while maintaining the precursor fluid in the liquid state. The pressure is reduced in the volume within which the semiconductor wafer resides such that the precursor fluid disposed on the wafer within the volume is transformed into the non-Newtonian fluid. An expansion of the precursor fluid and movement of the precursor fluid relative to the wafer during transformation into the non-Newtonian fluid causes the resulting non-Newtonian fluid to remove the material from the semiconductor wafer.

摘要翻译： 压力保持在其中半导体晶片所处于的体积内的压力足以将前体流体的液体状态保持为非牛顿流体。 前体流体靠近要从半导体晶片去除的材料设置，同时保持前体流体处于液态。 在半导体晶片所在的体积中的压力降低，使得设置在体积内的晶片上的前体流体被转化成非牛顿流体。 在转化成非牛顿流体期间，前体流体的膨胀和前体流体相对于晶片的移动导致所得到的非牛顿流体从半导体晶片中去除材料。

公开(公告)号：US20080227369A1

公开(公告)日：2008-09-18

申请号：US12129612

申请日：2008-05-29

申请人： John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  Michael Ravkin ,  John de Larios

发明人： John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  Michael Ravkin ,  John de Larios

IPC分类号： B24B57/02 ,  H05K3/07 ,  C25F3/00

CPC分类号： H01L21/32115 ,  C25F7/00

摘要： A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte solution. A cation exchange membrane is disposed over a lower opening of the chamber. A top surface of the cation exchange membrane is in direct exposure to the electrolyte solution to be maintained within the chamber. A fluid supply channel is defined to expel fluid at a location adjacent to a lower surface of the cation exchange membrane. A vacuum channel is defined to provide suction at a location adjacent to the lower surface of the cation exchange membrane, such that the fluid to be expelled from the fluid supply channel is made to flow over the lower surface of the cation exchange membrane.

摘要翻译： 提供接近头和相关联的使用方法用于执行半导体晶片的限定区域平坦化。 邻近头包括限定为维持电解质溶液的室。 在室内暴露于电解质溶液中设置阴极。 阳离子交换膜设置在室的下部开口的上方。 阳离子交换膜的顶表面直接暴露于电解质溶液中以保持在室内。 流体供应通道被定义为在邻近阳离子交换膜的下表面的位置排出流体。 定义真空通道以在邻近阳离子交换膜的下表面的位置处提供吸力，使得要从流体供应通道排出的流体流过阳离子交换膜的下表面。

公开(公告)号：US07598175B2

公开(公告)日：2009-10-06

申请号：US12129612

申请日：2008-05-29

申请人： John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  Michael Ravkin ,  John de Larios

发明人： John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  Michael Ravkin ,  John de Larios

IPC分类号： H01L21/302

CPC分类号： H01L21/32115 ,  C25F7/00

摘要： A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte solution. A cation exchange membrane is disposed over a lower opening of the chamber. A top surface of the cation exchange membrane is in direct exposure to the electrolyte solution to be maintained within the chamber. A fluid supply channel is defined to expel fluid at a location adjacent to a lower surface of the cation exchange membrane. A vacuum channel is defined to provide suction at a location adjacent to the lower surface of the cation exchange membrane, such that the fluid to be expelled from the fluid supply channel is made to flow over the lower surface of the cation exchange membrane.

摘要翻译： 提供接近头和相关联的使用方法用于执行半导体晶片的限定区域平坦化。 邻近头包括限定为维持电解质溶液的室。 在室内暴露于电解质溶液中设置阴极。 阳离子交换膜设置在室的下部开口的上方。 阳离子交换膜的顶表面直接暴露于电解质溶液中以保持在室内。 流体供应通道被定义为在邻近阳离子交换膜的下表面的位置排出流体。 定义真空通道以在邻近阳离子交换膜的下表面的位置处提供吸力，使得要从流体供应通道排出的流体流过阳离子交换膜的下表面。

公开(公告)号：US08323420B2

公开(公告)日：2012-12-04

申请号：US11174080

申请日：2005-06-30

申请人： Mikhail Korolik ,  Michael Ravkin ,  John deLarios ,  Fritz C. Redeker ,  John M. Boyd

发明人： Mikhail Korolik ,  Michael Ravkin ,  John deLarios ,  Fritz C. Redeker ,  John M. Boyd

IPC分类号： B08B7/00 ,  B08B7/04 ,  B08B3/00

CPC分类号： H01L21/67051 ,  G03F7/422 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/6704 ,  Y10S134/902

摘要： A pressure is maintained within a volume within which a semiconductor wafer resides at a pressure that is sufficient to maintain a liquid state of a precursor fluid to a non-Newtonian fluid. The precursor fluid is disposed proximate to a material to be removed from the semiconductor wafer while maintaining the precursor fluid in the liquid state. The pressure is reduced in the volume within which the semiconductor wafer resides such that the precursor fluid disposed on the wafer within the volume is transformed into the non-Newtonian fluid. An expansion of the precursor fluid and movement of the precursor fluid relative to the wafer during transformation into the non-Newtonian fluid causes the resulting non-Newtonian fluid to remove the material from the semiconductor wafer.

摘要翻译： 压力保持在其中半导体晶片所处于的体积内的压力足以将前体流体的液体状态保持为非牛顿流体。 前体流体靠近要从半导体晶片去除的材料设置，同时保持前体流体处于液态。 在半导体晶片所在的体积中的压力降低，使得设置在体积内的晶片上的前体流体被转化成非牛顿流体。 在转化成非牛顿流体期间，前体流体的膨胀和前体流体相对于晶片的移动导致所得到的非牛顿流体从半导体晶片中去除材料。

公开(公告)号：US07396430B2

公开(公告)日：2008-07-08

申请号：US11395881

申请日：2006-03-31

申请人： John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  Michael Ravkin ,  John de Larios

发明人： John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  Michael Ravkin ,  John de Larios

IPC分类号： H01L21/306

CPC分类号： H01L21/32115 ,  C25F7/00

摘要： A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte solution. A cation exchange membrane is disposed over a lower opening of the chamber. A top surface of the cation exchange membrane is in direct exposure to the electrolyte solution to be maintained within the chamber. A fluid supply channel is defined to expel fluid at a location adjacent to a lower surface of the cation exchange membrane. A vacuum channel is defined to provide suction at a location adjacent to the lower surface of the cation exchange membrane, such that the fluid to be expelled from the fluid supply channel is made to flow over the lower surface of the cation exchange membrane.

摘要翻译： 提供接近头和相关联的使用方法用于执行半导体晶片的限定区域平坦化。 邻近头包括限定为维持电解质溶液的室。 在室内暴露于电解质溶液中设置阴极。 阳离子交换膜设置在室的下部开口的上方。 阳离子交换膜的顶表面直接暴露于电解质溶液中以保持在室内。 流体供应通道被定义为在邻近阳离子交换膜的下表面的位置排出流体。 定义真空通道以在邻近阳离子交换膜的下表面的位置处提供吸力，使得要从流体供应通道排出的流体流过阳离子交换膜的下表面。

公开(公告)号：US20130061887A1

公开(公告)日：2013-03-14

申请号：US13670305

申请日：2012-11-06

申请人： Mikhail Korolik ,  Michael Ravkin ,  John deLarios ,  Fritz C. Redeker ,  John M. Boyd

发明人： Mikhail Korolik ,  Michael Ravkin ,  John deLarios ,  Fritz C. Redeker ,  John M. Boyd

IPC分类号： B08B3/04

CPC分类号： H01L21/67051 ,  G03F7/422 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/6704 ,  Y10S134/902

摘要： A pressure is maintained within a volume within which a semiconductor wafer resides at a pressure that is sufficient to maintain a liquid state of a precursor fluid to a non-Newtonian fluid. The precursor fluid is disposed proximate to a material to be removed from the semiconductor wafer while maintaining the precursor fluid in the liquid state. The pressure is reduced in the volume within which the semiconductor wafer resides such that the precursor fluid disposed on the wafer within the volume is transformed into the non-Newtonian fluid. An expansion of the precursor fluid and movement of the precursor fluid relative to the wafer during transformation into the non-Newtonian fluid causes the resulting non-Newtonian fluid to remove the material from the semiconductor wafer.

摘要翻译： 压力保持在其中半导体晶片所处于的体积内的压力足以将前体流体的液体状态保持为非牛顿流体。 前体流体靠近要从半导体晶片去除的材料设置，同时保持前体流体处于液态。 在半导体晶片所在的体积中的压力降低，使得设置在体积内的晶片上的前体流体被转化成非牛顿流体。 在转化成非牛顿流体期间，前体流体的膨胀和前体流体相对于晶片的移动导致所得到的非牛顿流体从半导体晶片中去除材料。

公开(公告)号：US20080148595A1

公开(公告)日：2008-06-26

申请号：US11643479

申请日：2006-12-20

申请人： John M. de Larios ,  Paul A. Kittle ,  Michael Ravkin ,  Mikhail Korolik ,  Erik Freer ,  Katrina Mikhaylich ,  Fritz C. Redeker

发明人： John M. de Larios ,  Paul A. Kittle ,  Michael Ravkin ,  Mikhail Korolik ,  Erik Freer ,  Katrina Mikhaylich ,  Fritz C. Redeker

IPC分类号： F26B7/00 ,  F26B21/00

CPC分类号： F26B5/14 ,  F26B21/14 ,  H01L21/67034

摘要： A method for processing a substrate using a proximity head is disclosed. The method is initiated by, providing a head with a head surface positioned proximate to a surface of the substrate. The head has a width and a length, and the head has a plurality of ports that are configured in rows along the length of the head. The plurality of rows can extend over a width of the head, and there is a first group of ports configured to dispense a first fluid. The first fluid is dispensed to the surface of the substrate forming a meniscus between the surface of the substrate and the surface of the head. The method also includes delivering gaseous carbon dioxide from a second group of ports of the head to an interface between the meniscus and the substrate. The carbon dioxide assists in promoting a reduced surface tension on the meniscus relative to surface of the substrate.

摘要翻译： 公开了一种使用邻近头来处理衬底的方法。 该方法是通过提供具有靠近基板的表面定位的头表面的头来开始的。 头部具有宽度和长度，头部具有沿头部长度配置成行的多个端口。 多个行可以在头部的宽度上延伸，并且存在被配置为分配第一流体的第一组端口。 将第一流体分配到基材的表面，在基材的表面和头部表面之间形成弯液面。 该方法还包括将气态二氧化碳从头部的第二组端口输送到弯月面和基底之间的界面。 二氧化碳有助于相对于基底表面促进弯月面上的表面张力降低。

公开(公告)号：US20070151583A1

公开(公告)日：2007-07-05

申请号：US11543365

申请日：2006-10-04

申请人： Erik M. Freer ,  John M. deLarios ,  Katrina Mikhaylichenko ,  Michael Ravkin ,  Mikhail Korolik ,  Fritz C. Redeker

发明人： Erik M. Freer ,  John M. deLarios ,  Katrina Mikhaylichenko ,  Michael Ravkin ,  Mikhail Korolik ,  Fritz C. Redeker

IPC分类号： B08B3/00 ,  B08B3/12

CPC分类号： B08B3/024 ,  B08B3/003 ,  B08B3/08 ,  B08B6/00 ,  H01L21/67051

摘要： A method and system for cleaning a surface, having particulate matter thereon, of a substrate features impinging upon the surface a jet of a liquid having coupling elements entrained therein. A sufficient drag force is imparted upon the coupling elements to have the same move with respect to the liquid and cause the particulate matter to move with respect to the substrate.

摘要翻译： 一种用于清洁其上具有颗粒物质的表面的表面的方法和系统，其特征在于其表面上具有夹带在其中的具有耦合元件的液体的射流。 赋予联接元件足够的拖曳力以相对于液体具有相同的移动并使颗粒物质相对于基底移动。

公开(公告)号：US08480810B2

公开(公告)日：2013-07-09

申请号：US11543365

申请日：2006-10-04

申请人： Erik M. Freer ,  John M. de Larios ,  Katrina Mikhaylichenko ,  Michael Ravkin ,  Mikhail Korolik ,  Fritz C. Redeker

发明人： Erik M. Freer ,  John M. de Larios ,  Katrina Mikhaylichenko ,  Michael Ravkin ,  Mikhail Korolik ,  Fritz C. Redeker

IPC分类号： B08B7/04

CPC分类号： B08B3/024 ,  B08B3/003 ,  B08B3/08 ,  B08B6/00 ,  H01L21/67051

摘要： A method and system for cleaning a surface, having particulate matter thereon, of a substrate features impinging upon the surface a jet of a liquid having coupling elements entrained therein. A sufficient drag force is imparted upon the coupling elements to have the same move with respect to the liquid and cause the particulate matter to move with respect to the substrate.

摘要翻译： 一种用于清洁其上具有颗粒物质的表面的表面的方法和系统，其特征在于其表面上具有夹带在其中的具有耦合元件的液体的射流。 赋予耦合元件足够的阻力以相对于液体具有相同的移动并使颗粒物质相对于基底移动。

公开(公告)号：US08011116B2

公开(公告)日：2011-09-06

申请号：US12860786

申请日：2010-08-20

申请人： Katrina Mikhaylichenko ,  Kenneth C. Dodge ,  Mikhail Korolik ,  Michael Ravkin ,  John M. de Larios ,  Fritz C. Redeker

发明人： Katrina Mikhaylichenko ,  Kenneth C. Dodge ,  Mikhail Korolik ,  Michael Ravkin ,  John M. de Larios ,  Fritz C. Redeker

IPC分类号： F26B3/34

CPC分类号： B08B3/04 ,  G03F7/30 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  Y10S134/902

摘要： A method is provided for removing a residual fluid remaining at a point of contact between a substrate support member and a back surface of a substrate being prepared by a proximity head. According to the method, the proximity head is applied onto the back surface of the substrate and the substrate support member being held by a carrier. The substrate support member is heated after the substrate support member passes the proximity head. The heating of the substrate support member is discontinued once the residual fluid has substantially evaporated.

摘要翻译： 提供了一种用于去除残留在衬底支撑构件和由邻近头准备的衬底的背面之间的接触点处的残余流体的方法。 根据该方法，将接近头部施加到基板的背面，并且基板支撑构件被载体保持。 在衬底支撑构件通过邻近头之后，加热衬底支撑构件。 一旦残留的流体基本上蒸发，衬底支撑构件的加热就会停止。