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公开(公告)号：US20090140231A1
公开(公告)日：2009-06-04
申请号：US11918960
申请日：2006-04-25
CPC分类号： G11C13/0014 , B82Y10/00 , G11C2213/77 , G11C2213/79 , H01L27/13 , H01L27/285
摘要： It is an object of the present invention to provide a technique in which a high-performance and highly reliable semiconductor device can be manufactured at low cost with high yield. A memory device according to the present invention has a first conductive layer including a plurality of insulators, an organic compound layer over the first conductive layer including the insulators, and a second conductive layer over the organic compound layer.
摘要翻译： 本发明的目的是提供一种以低成本，高产率地制造高性能和高可靠性的半导体器件的技术。 根据本发明的存储器件具有包括多个绝缘体的第一导电层，包括绝缘体的第一导电层上的有机化合物层，以及有机化合物层上的第二导电层。
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2.发明授权Method for manufacturing a semiconductor device including a memory device comprising an insulator mixture region in a conductive layer 有权一种制造半导体器件的方法，该半导体器件包括在导电层中包括绝缘体混合区的存储器件公开(公告)号：US08288197B2
公开(公告)日：2012-10-16
申请号：US11918960
申请日：2006-04-25
CPC分类号： G11C13/0014 , B82Y10/00 , G11C2213/77 , G11C2213/79 , H01L27/13 , H01L27/285
摘要： It is an object of the present invention to provide a technique in which a high-performance and highly reliable semiconductor device can be manufactured at low cost with high yield. A memory device according to the present invention has a first conductive layer including a plurality of insulators, an organic compound layer over the first conductive layer including the insulators, and a second conductive layer over the organic compound layer.
摘要翻译： 本发明的目的是提供一种以低成本，高产率地制造高性能和高可靠性的半导体器件的技术。 根据本发明的存储器件具有包括多个绝缘体的第一导电层，包括绝缘体的第一导电层上的有机化合物层，以及有机化合物层上的第二导电层。
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公开(公告)号：US20080149733A1
公开(公告)日：2008-06-26
申请号：US11795476
申请日：2006-02-07
申请人： Mikio Yukawa , Tamae Takano , Yoshinobu Asami , Shunpei Yamazaki , Takehisa Sato
发明人： Mikio Yukawa , Tamae Takano , Yoshinobu Asami , Shunpei Yamazaki , Takehisa Sato
CPC分类号： H01L27/112 , G11C17/146 , G11C17/16
摘要： It is an object of the present invention to provide a nonvolatile memory device, in which additional writing is possible other than in manufacturing and forgery and the like due to rewriting can be prevented, and a semiconductor device having the memory device. It is another object of the present invention to provide an inexpensive and nonvolatile memory device with high reliability and a semiconductor device. According to one feature of the present invention, a memory device includes a first conductive layer formed over an insulating surface, a second conductive layer, a first insulating layer interposed between the first conductive layer and the second conductive layer, and a second insulating layer which covers a part of the first conductive layer, wherein the first insulating layer covers an edge portion of the first conductive layer, the insulating surface, and the second insulating layer.
摘要翻译： 本发明的一个目的是提供一种非易失性存储器件，其中可以除了制造和伪造等以外的其他写入可能被改写，以及具有存储器件的半导体器件。 本发明的另一个目的是提供一种具有高可靠性的廉价且非易失性的存储器件和半导体器件。 根据本发明的一个特征，一种存储器件包括：在绝缘表面上形成的第一导电层，第二导电层，介于第一导电层和第二导电层之间的第一绝缘层;以及第二绝缘层， 覆盖第一导电层的一部分，其中第一绝缘层覆盖第一导电层，绝缘表面和第二绝缘层的边缘部分。
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公开(公告)号：US08604547B2
公开(公告)日：2013-12-10
申请号：US11795476
申请日：2006-02-07
申请人： Mikio Yukawa , Tamae Takano , Yoshinobu Asami , Shunpei Yamazaki , Takehisa Sato
发明人： Mikio Yukawa , Tamae Takano , Yoshinobu Asami , Shunpei Yamazaki , Takehisa Sato
CPC分类号： H01L27/112 , G11C17/146 , G11C17/16
摘要： It is an object of the present invention to provide a nonvolatile memory device, in which additional writing is possible other than in manufacturing and forgery and the like due to rewriting can be prevented, and a semiconductor device having the memory device. It is another object of the present invention to provide an inexpensive and nonvolatile memory device with high reliability and a semiconductor device. According to one feature of the present invention, a memory device includes a first conductive layer formed over an insulating surface, a second conductive layer, a first insulating layer interposed between the first conductive layer and the second conductive layer, and a second insulating layer which covers a part of the first conductive layer, wherein the first insulating layer covers an edge portion of the first conductive layer, the insulating surface, and the second insulating layer.
摘要翻译： 本发明的一个目的是提供一种非易失性存储器件，其中可以除了制造和伪造等以外的其他写入可能被改写，以及具有存储器件的半导体器件。 本发明的另一个目的是提供一种具有高可靠性的廉价且非易失性的存储器件和半导体器件。 根据本发明的一个特征，一种存储器件包括：在绝缘表面上形成的第一导电层，第二导电层，介于第一导电层和第二导电层之间的第一绝缘层;以及第二绝缘层， 覆盖第一导电层的一部分，其中第一绝缘层覆盖第一导电层，绝缘表面和第二绝缘层的边缘部分。
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5.发明授权Manufacturing method of semiconductor device with element isolation region formed within 有权在其内形成元件隔离区的半导体器件的制造方法公开(公告)号：US08513072B2
公开(公告)日：2013-08-20
申请号：US12968656
申请日：2010-12-15
申请人： Shunpei Yamazaki , Yasuyuki Arai , Ikuko Kawamata
发明人： Shunpei Yamazaki , Yasuyuki Arai , Ikuko Kawamata
IPC分类号： H01L21/336
CPC分类号： H01L27/11546 , H01L27/0207 , H01L27/105 , H01L27/115 , H01L27/11519 , H01L27/11521 , H01L27/11524 , H01L27/11526 , H01L27/1255 , H01L29/66825 , H01L29/7881
摘要： In order to form a plurality of semiconductor elements over an insulating surface, in one continuous semiconductor layer, an element region serving as a semiconductor element and an element isolation region having a function to electrically isolate element regions from each other by repetition of PN junctions. The element isolation region is formed by selective addition of an impurity element of at least one or more kinds of oxygen, nitrogen, and carbon and an impurity element that imparts an opposite conductivity type to that of the adjacent element region in order to electrically isolate elements from each other in one continuous semiconductor layer.
摘要翻译： 为了在绝缘表面上形成多个半导体元件，在一个连续半导体层中，用作半导体元件的元件区域和具有通过重复PN结将元件区域彼此电隔离的功能的元件隔离区域。 通过选择性地添加至少一种或多种氧，氮和碳的杂质元素和赋予与相邻元件区相反的导电类型的杂质元素来形成元件隔离区域，以便电隔离元件 在一个连续的半导体层中彼此相交。
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公开(公告)号：US08445905B2
公开(公告)日：2013-05-21
申请号：US13567451
申请日：2012-08-06
IPC分类号： H01L29/10
CPC分类号： H01L27/1251 , G02F1/13454 , G02F2201/40 , G02F2202/10 , H01L27/1225 , H01L27/1233
摘要： An object is to increase an aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over one substrate. The driver circuit portion includes a channel-etched thin film transistor for a driver circuit, in which a source electrode and a drain electrode are formed using metal and a channel layer is formed of an oxide semiconductor, and a driver circuit wiring formed using metal. The display portion includes a channel protection thin film transistor for a pixel, in which a source electrode layer and a drain electrode layer are formed using an oxide conductor and a semiconductor layer is formed of an oxide semiconductor, and a display portion wiring formed using an oxide conductor.
摘要翻译： 目的是提高半导体器件的开口率。 半导体器件包括驱动器电路部分和在一个衬底上的显示部分（也称为像素部分）。 驱动器电路部分包括用于驱动电路的沟道蚀刻薄膜晶体管，其中使用金属形成源电极和漏电极，并且沟道层由氧化物半导体形成，以及使用金属形成的驱动电路布线。 显示部分包括用于像素的沟道保护薄膜晶体管，其中使用氧化物导体形成源极电极层和漏极电极层，并且半导体层由氧化物半导体形成;以及显示部分布线，其使用 氧化物导体。
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公开(公告)号：US07768009B2
公开(公告)日：2010-08-03
申请号：US12196798
申请日：2008-08-22
申请人： Satoshi Kobayashi , Ikuko Kawamata , Koji Dairiki , Shigeki Komori , Toshiyuki Isa , Shunpei Yamazaki
发明人： Satoshi Kobayashi , Ikuko Kawamata , Koji Dairiki , Shigeki Komori , Toshiyuki Isa , Shunpei Yamazaki
CPC分类号： H01L29/04 , H01L29/41733 , H01L29/4908 , H01L29/66765 , H01L29/78696
摘要： A display device including a thin film transistor with high electric characteristics and high reliability, and a method for manufacturing the display device with high mass-productivity. In a display device including an inverted-staggered channel-stop-type thin film transistor, the inverted-staggered channel-stop-type thin film transistor includes a microcrystalline semiconductor film including a channel formation region, and an impurity region containing an impurity element of one conductivity type is selectively provided in a region which is not overlapped with source and drain electrodes, in the channel formation region of the microcrystalline semiconductor film.
摘要翻译： 一种包括具有高电特性和高可靠性的薄膜晶体管的显示装置，以及具有高批量生产率的显示装置的制造方法。 在包括反交错通道停止型薄膜晶体管的显示装置中，反交错通道停止型薄膜晶体管包括包含沟道形成区的微晶半导体膜，以及含有杂质元素的杂质区 在微晶半导体膜的沟道形成区域中，在不与源极和漏极重叠的区域中选择性地提供一种导电型。
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公开(公告)号：US20060046336A1
公开(公告)日：2006-03-02
申请号：US11205220
申请日：2005-08-17
申请人： Hironobu Shoji , Shinji Maekawa , Kensuke Yoshizumi , Tatsuya Honda , Yukie Suzuki , Ikuko Kawamata , Shunpei Yamazaki
发明人： Hironobu Shoji , Shinji Maekawa , Kensuke Yoshizumi , Tatsuya Honda , Yukie Suzuki , Ikuko Kawamata , Shunpei Yamazaki
IPC分类号： H01L21/00
CPC分类号： H01L51/56 , H01L27/1277 , H01L27/1292 , H01L27/322 , H01L27/3244 , H01L27/3246 , H01L27/3262 , H01L27/3276 , H01L29/42384 , H01L29/458 , H01L29/66757 , H01L29/78675 , H01L29/78696 , H01L51/0005 , H01L51/524 , H01L51/5253 , H01L51/5281 , H01L51/529 , H01L2251/5315 , H01L2251/5323 , Y02P80/30
摘要： The present invention provides a method for manufacturing a display device having a TFT that can be operated at high speed while using a small number of photomasks and improving the utilization efficiency of materials, where the threshold value is difficult to be varied. In the invention, a catalytic element is applied to an amorphous semiconductor film and the amorphous semiconductor film is heated to form a crystalline semiconductor film. After removing the catalytic element from the crystalline semiconductor film, a top-gate type thin film transistor with a planar structure is manufactured. Moreover, by using the droplet discharging method where an element of a display device is formed selectively, the process can be simplified, and loss of materials can be reduced.
摘要翻译： 本发明提供了一种用于制造具有TFT的显示装置的方法，所述显示装置可以在使用少量光掩模的情况下高速运转并且提高难以改变阈值的材料的利用效率。 在本发明中，将催化元件施加到非晶半导体膜上，并加热非晶半导体膜以形成结晶半导体膜。 在从晶体半导体膜去除催化元素之后，制造具有平面结构的顶栅型薄膜晶体管。 此外，通过使用选择性地形成显示装置的元件的液滴喷射方法，可以简化该过程，并且可以减少材料的损失。
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9.发明授权公开(公告)号：US08520178B2
公开(公告)日：2013-08-27
申请号：US12844072
申请日：2010-07-27
申请人： Shunpei Yamazaki , Hironobu Shoji , Ikuko Kawamata
发明人： Shunpei Yamazaki , Hironobu Shoji , Ikuko Kawamata
IPC分类号： G02F1/1343 , B05D5/00 , B05D1/32 , B05D7/22
CPC分类号： H01L21/76801 , H01L21/288 , H01L21/76838 , H01L27/124 , H01L27/1285 , H01L27/1292 , H01L2924/0002 , H01L2924/00
摘要： When a conductive layer is formed, a first liquid composition containing a conductive material is applied on an outer side of a pattern that is desired to be formed (corresponding to a contour or an edge portion of a pattern), and a first conductive layer (insulating layer) having a frame-shape is formed. A second liquid composition containing a conductive material is applied so as to fill a space inside the first conductive layer having a frame-shape, whereby a second conductive layer is formed. The first conductive layer and the second conductive layer are formed so as to be in contact with each other, and the first conductive layer is formed so as to surround the second conductive layer. Therefore, the first conductive layer and the second conductive layer can be used as one continuous conductive layer.
摘要翻译： 当形成导电层时，将含有导电材料的第一液体组合物施加在期望形成的图案的外侧（对应于图案的轮廓或边缘部分）和第一导电层（ 绝缘层）形成。 涂布含有导电材料的第二液体组合物，以填充具有框架形状的第一导电层内的空间，由此形成第二导电层。 第一导电层和第二导电层形成为彼此接触，并且第一导电层形成为围绕第二导电层。 因此，第一导电层和第二导电层可以用作一个连续导电层。
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公开(公告)号：US08242496B2
公开(公告)日：2012-08-14
申请号：US12835117
申请日：2010-07-13
IPC分类号： H01L29/786
CPC分类号： H01L27/1251 , G02F1/13454 , G02F2201/40 , G02F2202/10 , H01L27/1225 , H01L27/1233
摘要： An object is to increase an aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over one substrate. The driver circuit portion includes a channel-etched thin film transistor for a driver circuit, in which a source electrode and a drain electrode are formed using metal and a channel layer is formed of an oxide semiconductor, and a driver circuit wiring formed using metal. The display portion includes a channel protection thin film transistor for a pixel, in which a source electrode layer and a drain electrode layer are formed using an oxide conductor and a semiconductor layer is formed of an oxide semiconductor, and a display portion wiring formed using an oxide conductor.
摘要翻译： 目的是提高半导体器件的开口率。 半导体器件包括驱动器电路部分和在一个衬底上的显示部分（也称为像素部分）。 驱动器电路部分包括用于驱动电路的沟道蚀刻薄膜晶体管，其中使用金属形成源电极和漏电极，并且沟道层由氧化物半导体形成，以及使用金属形成的驱动电路布线。 显示部分包括用于像素的沟道保护薄膜晶体管，其中使用氧化物导体形成源极电极层和漏极电极层，并且半导体层由氧化物半导体形成;以及显示部分布线，其使用 氧化物导体。
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